H11D3SR2M [ONSEMI]
6 引脚 DIP 高压光电晶体管输出光耦合器;
| 型号： | H11D3SR2M |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 高压光电晶体管输出光耦合器 高压 输出元件 晶体管 光电晶体管 |
| 文件： | 总10页 (文件大小：334K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
6-Pin DIP High Voltage
Phototransistor
Optocouplers
6
1
PDIP6
CASE 646BY
4N38M, H11D1M, H11D3M,
MOC8204M
Description
6
6
The 4N38M, H11D1M, H11D3M and MOC8204M are
phototransistor−type optically coupled optoisolators. A gallium
arsenide infrared emitting diode is coupled with a high voltage NPN
silicon phototransistor. The device is supplied in a standard plastic
six−pin dual−in−line package.
1
1
PDIP6
CASE 646BX
PDIP6
CASE 646BZ
MARKING DIAGRAM
Features
• High Voltage:
ON
♦ MOC8204M, BV
= 400 V
H11D1
CEO
VXYYQ
♦ H11D1M, BV
♦ H11D3M, BV
= 300 V
= 200 V
CEO
CEO
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VAC for 1 Minute
• DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
ON
= Company Logo
H11D1 = Specific Device Code
V
RMS
= DIN EN/IEC60747−5−5 Option
(only appears on component ordered with
this option)
= One−Digit Year Code
= Digit Work Week
Applications
X
YY
Q
• Power Supply Regulators
• Digital Logic Inputs
• Microprocessor Inputs
• Appliance Sensor Systems
• Industrial Controls
= Assembly Package Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 410
of this data sheet.
© Semiconductor Components Industries, LLC, 2022
1
Publication Order Number:
February, 2022 − Rev. 0
MOC8204M/D
4N38M, H11D1M, H11D3M, MOC8204M
SCHEMATICS
ANODE
CATHODE
N/C
6
5
BASE
1
2
3
COLLECTOR
EMITTER
4
Figure 1. Schematics
SAFETY AND INSULATION RATINGS
Parameter
Characteristic
Installation Classifications per DIN VDE
< 150 V
< 300 V
I − IV
I − IV
55/100/21
2
RMS
0110/1.89 Table 1, For Rated Mains Voltage
RMS
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Value
Unit
V
PR
1360
V
peak
Input−to−Output Test Voltage, Method A, V
x 1.6 = V , Type and Sample Test
IORM
PR
with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V , 100% Production Test
1594
V
peak
IORM
PR
with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥ 7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥ 10
≥ 0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
Ω
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
> 10
IO
S
IO
As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the
safety ratings shall be ensured by means of protective circuits.
1. Safety limit values – maximum values allowed in the event of a failure.
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2
4N38M, H11D1M, H11D3M, MOC8204M
ABSOLUTE MAXIUM RATINGS
Symbol
Parameter
Device
Value
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
All
All
All
All
All
−40 to + 125
−40 to + 100
−40 to + 125
260 for 10 seconds
420
°C
°C
STG
OPR
T
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
3.5
EMITTER
I
Forward DC Current (Note 2)
All
All
All
All
80
6.0
mA
V
F
V
Reverse Input Voltage (Note 2)
R
I (pk)
Forward Current – Peak (1 μs pulse, 300 pps) (Note 2)
3.0
A
F
P
LED Power Dissipation @ T = 25°C (Note 2)
120
1.41
mW
mW/°C
D
A
Derate Above 25°C
DETECTOR
P
Power Dissipation @ TA = 25°C
Derate Linearly Above 25°C
All
300
4.0
400
300
200
80
mW
D
mW/°C
V
CEO
V
CBO
V
ECO
Collector to Emitter Voltage (Note 2)
MOC8204M
H11D1M
H11D3M
4N38M
V
V
V
V
V
V
V
V
V
Collector Base Voltage (Note 2)
MOC8204M
H11D1M
H11D3M
4N38M
400
300
200
80
Emitter to Collector Voltage (Note 2)
Collector Current (Continuous)
H11D1M,
H11D3M,
MOC8204M
7
I
C
All
100
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
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3
4N38M, H11D1M, H11D3M, MOC8204M
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Symbol
Characteristic
Test Conditions
Device
Min
Typ
Max
Unit
INDIVIDUAL COMONENT CHARACTERISTICS
Emitter
V
Forward Voltage (Note 3)
I = 10 mA
F
All
All
−
−
1.15
1.50
V
F
ΔV
ΔT
Forward Voltage Temperature
Coefficient
−1.8
−
mV/°C
F
A
BV
Reverse Breakdown Voltage
Junction Capacitance
I
= 10 μA
All
All
6
−
−
−
25
50
−
−
V
R
R
C
pF
pF
μA
V = 0 V, f = 1 MHz
J
F
V = 1 V, f = 1 MHz
65
−
F
I
R
Reverse Leakage Current
(Note 3)
V
= 6 V
All
0.05
10
R
Detector
BV
Breakdown Voltage
R
C
= 1 MΩ,
BE
MOC8204M
H11D1M
H11D3M
4N38M
400
300
200
80
400
300
200
80
7
−
−
−
−
−
−
−
−
−
10
−
−
−
−
−
−
−
−
−
V
V
CEO
Collector−to−Emitter (Note 3)
I
= 1.0 mA, I = 0
F
−
V
No RBE, I = 1.0 mA
−
V
C
BV
Collector to Base (Note 3)
I
C
= 100 μA, I = 0
MOC8204M
H11D1M
H11D3M
4N38M
−
V
CBO
F
−
V
−
V
−
V
BV
BV
I
Emitter to Base
I
I
= 100 μA, I = 0
4N38M
−
V
EBO
E
F
Emitter to Collector
= 100 μA, I = 0
All
7
−
V
ECO
E
F
Leakage Current Collector to
MOC8204M
−
100
250
100
250
100
250
50
nA
μA
nA
μA
nA
μA
nA
V
CE
V
CE
V
CE
V
CE
V
CE
V
CE
= 300 V, I = 0, T = 25°C
CEO
F
A
Emitter (Note 3) (R = 1 MΩ)
BE
= 300 V, I = 0, T = 100°C
−
F
A
H11D1M
H11D3M
4N38M
−
= 200 V, I = 0, T = 25°C
F
A
= 200 V, I = 0, T = 100°C
−
F
A
= 100 V, I = 0, T = 25°C
−
F
A
= 100 V, I = 0, T = 100°C
−
F
A
No R , V = 60 V, I = 0, T = 25°C
−
BE
CE
F
A
TRANSFER CHARACTERISTICS
Emitter
CTR
Current Transfer Ratio,
Collector−to−Emitter
I = 10 mA, V = 10 V,
BE
H11D1M,
H11D3M,
MOC8204M
2 (20)
−
−
mA (%)
F
CE
R
= 1 MΩ
I = 10 mA, V = 10 V
4N38M
2 (20)
−
−
mA (%)
V
F
CE
V
Saturation Voltage (Note 3)
I = 10 mA, I = 0.5 mA,
H11D1M,
H11D3M,
MOC8204M
−
0.1
0.4
CE(SAT)
F
BE
C
R
= 1 MΩ
I = 20 mA, I = 4 mA
4N38M
−
−
1.0
V
F
C
Switching Times
t
Non−Saturated Turn−on Time
Turn−off Time
V
= 10 V, I = 2 mA,
All
All
−
−
5
5
−
−
μs
μs
ON
CE
C
RL = 100 Ω
t
OFF
ISOLATION CHARACTERISTICS
V
ISO
C
ISO
R
ISO
Input−Output Isolation Voltage
Isolation Capacitance
t = 1 Minute
4170
−
−
0.2
−
−
−
−
VAC
RMS
V
I−O
V
I−O
= 0 V, f = 1 MHz
pF
Isolation Resistance
=
500 V , T = 25°C
1011
Ω
DC
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
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4
4N38M, H11D1M, H11D3M, MOC8204M
TYPICAL PERFORMANCE CURVES
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Normalized to:
V
CE
= 10 V
I
= 50 mA
= 10 mA
F
10
I
R
= 10 mA
F
6
= 10 Ω
BE
I
T = 25°C
A
F
1
I
= 5 mA
F
T
= −55°C
A
0.1
T
A
= 25°C
0.01
T
A
= 100°C
1
10
100
0.1
V
1
10
100
− COLLECTOR VOLTAGE (V)
I
F
– LED FORWARDCURRENT (mA)
CE
Figure 2. LED Forward Voltage vs. Forward
Current
Figure 3. Normalized Output Characteristics
10
1
Normalized to:
V
CE
= 10 V
I
R
= 10 mA
F
6
I
= 20 mA
= 10 mA
F
= 10 Ω
BE
T = 25°C
A
I
F
1
I
F
= 5 mA
0.1
0.01
Normalized to:
= 10 V
V
CE
I
R
= 10 mA
F
6
= 10 Ω
BE
T = 25°C
A
0.01
100
1
10
−60
−40
−20
0
20
40
60
80
T
A
– AMBIENT TEMPERATURE (°C)
I
F
– LED INPUT DCURRENT (mA)
Figure 4. Normalized Output Current vs. LED
Input Current
Figure 5. Normalized Output Current vs.
Temperature
10
9
Normalized to:
Normalized to:
10000
1000
100
V
R
= 100 V
= 10 Ω
CE
V
CE
= 10 V
6
BE
8
7
6
5
4
3
2
1
0
I
R
= 10 mA
F
I = 50 mA
F
V
= 300 V
T = 25°C
A
CE
6
= 10 Ω
BE
T = 25°C
A
V
CE
= 100 V
10
V
= 50 V
I
F
= 10 mA
CE
1
I
= 5 mA
F
0.1
10 20 30 40 50 60
70 80
90 100 110
−60 −40 −20
0
20
40
60
80 100
T
A
– AMBIENT TEMPERATURE (°C)
T
A
– AMBIENT TEMPERATURE (°C)
Figure 7. Normalized Collector−Base Current
Figure 6. Normalized Dark Current vs. Ambient
Temperature
vs. Temperature
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5
4N38M, H11D1M, H11D3M, MOC8204M
REFLOW PROFILE
Figure 8. Reflow Profile
Profile Feature
Pb−Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
200°C
Time (t ) from (Tsmin to Tsmax)
60 − 120 seconds
3°C / second max.
217°C
S
Ramp−up Rate (t to t )
P
Liquidous Temperature (T )
L
Time (t ) Maintained Above (T )
60 − 150 seconds
260°C + 0°C / −5°C
30 seconds
L
L
Peak Body Package Temperature
Time (t ) within 5°C of 260°C
P
Ramp−down Rate (T to T )
6°C / second max.
8 minutes max.
P
L
Time 25°C to Peak Temperature
Table 1. ORDERING INFORMATION
Part Number
H11D1M
Package
Packing Method†
DIP 6−Pin
Tube (50 Units)
H11D1SM
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
Tube (50 Units)
H11D1SR2M
H11D1VM
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
H11D1SVM
H11D1SR2VM
H11D1TVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4” Lead Spacing, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
4. The product orderable part number system listed in this table also applies to the 4N38M, H11D3M, and MOC8204M devices.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
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