H11G2TVM [ONSEMI]
6 引脚 DIP 高电压光电达林顿输出光耦合器;
| 型号： | H11G2TVM |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 高电压光电达林顿输出光耦合器 输出元件 光电 |
| 文件： | 总10页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6-Pin DIP High Voltage
Photodarlington
Optocouplers
H11G1M, H11G2M
Description
www.onsemi.com
The H11G1M and H11G2M are photodarlington−type optically
coupled optocouplers. These devices have a gallium arsenide infrared
emitting diode coupled with a silicon darlington connected
phototransistor which has an integral base−emitter resistor to optimize
elevated temperature characteristics.
PDIP6 8.51x6.35, 2.54P
6
6
CASE 646BY
1
Features
• High BV
:
CEO
PDIP6 8.51x6.35, 2.54P
CASE 646BX
♦ 100 V Minimum for H11G1M
♦ 80 V Minimum for H11G2M
1
1
• High Sensitivity to Low Input Current
(Minimum 500% CTR at I = 1 mA)
F
• Low Leakage Current at Elevated Temperature
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
6
(Maximum 100 mA at 80°C)
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
MARKING DIAGRAM
Application
ON
• CMOS Logic Interface
• Telephone Ring Detector
• Low Input TTL Interface
• Power Supply Isolation
• Replace Pulse Transformer
H11G1
VXYYQ
H11G1 = Specific Device Code
V
= DIN EN/IEC60747−5−5 Option (only
appears on component ordered with
this option)
X
YY
Q
= One−Digit Year Code
= Digit Work Week
= Assembly Package Code
SCHEMATIC
ANODE
1
6
BASE
CATHODE 2
5
4
COLLECTOR
EMITTER
3
N/C
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
July, 2020 − Rev. 2
H11G1M/D
H11G1M, H11G2M
SAFETY AND INSULATION RATINGS
(As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.)
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
<150 V
<300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V x 1.6 = V
Value
Unit
V
PR
,
1360
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1594
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6000
≥7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥7
External Clearance (for Option TV, 0.4” Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥10
≥0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
>10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Max
Unit
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +125
−40 to +100
−40 to +125
260 for 10 seconds
290
°C
°C
STG
OPR
T
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
3.5
EMITTER
I
DC / Average Forward Input Current
Reverse Input Voltage
60
6.0
3.0
90
mA
V
F
V
R
I (pk)
Forward Current – Peak (1 ms pulse, 300 pps)
A
F
P
LED Power Dissipation @ T = 25°C
mW
mW/°C
D
A
Derate Above 25°C
1.8
DETECTOR
V
CEO
Collector Emitter Voltage
H11G1M
H11G2M
100
80
V
V
P
D
Photodetector Power Dissipation @ T = 25°C
200
2.67
mW
mW/°C
A
Derate Above 25°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
www.onsemi.com
2
H11G1M, H11G2M
ELECTRICAL CHARACTERISTICS − INDIVIDUAL COMPONENT CHARACTERISTICS
(T = 25°C unless otherwise noted)
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
EMITTER
V
Forward Voltage
I = 10 mA
−
−
1.3
−1.8
25
1.5
−
V
mV/°C
V
F
F
DV /DT
Forward Voltage Temperature Coefficient
Reverse Breakdown Voltage
Junction Capacitance
F
A
BV
I
R
= 10 mA
3.0
−
−
R
C
V = 0 V, f = 1 MHz
F
50
−
pF
J
V = 1 V, f = 1 MHz
F
−
65
−
pF
I
R
Reverse Leakage Current
V
R
= 3.0 V
−
0.001
10
mA
DETECTOR
BV
BV
BV
Breakdown Voltage Collector
to Emitter
H11G1M
I
= 1.0 mA, I = 0
100
80
100
80
7
−
−
−
−
V
V
CEO
CBO
EBO
C
C
F
H11G2M
H11G1M
H11G2M
Collector to Base
I
= 100 mA
−
−
V
−
−
V
Emitter Base
10
−
−
V
I
Leakage Current Collector
to Emitter
H11G1M
H11G2M
H11G1M
H11G2M
V
V
V
V
= 80 V, I = 0
−
100
100
100
100
nA
nA
mA
mA
CEO
CE
CE
CE
CE
F
= 60 V, I = 0
−
−
F
= 80 V, I = 0, T = 80°C
−
−
F
A
= 60 V, I = 0, T = 80°C
−
−
F
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − TRANSFER CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
EMITTER
CTR
Parameter
Test Conditions
Min
Typ
Max
Unit
Current Transfer Ratio,
Collector to Emitter
I = 10 mA, V = 1 V
100
(1000)
−
−
mA (%)
F
CE
I = 1 mA, V = 5 V
5 (500)
−
−
mA (%)
F
CE
V
Saturation Voltage
I = 16 mA, I = 50 mA,
−
−
0.85
0.75
1.0
1.0
V
V
CE (SAT)
F
C
I = 1 mA, I = 1 mA,
F
C
SWITCHING TIMES
t
Turn on Time
Turn off Time
R = 100 W, I = 10 mA, V = 5 V,
−
−
5
−
−
ms
ms
ON
L
F
CE
f ≤ 30 Hz, Pulse Width ≤ 300 ms
t
100
OFF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ELECTRICAL CHARACTERISTICS − ISOLATION CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Symbol
VISO
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
t = 1 Minute
Min
4170
−
Typ
−
Max
−
Unit
VAC
RMS
CISO
V
I−O
V
I−O
= 0 V, f = 1 MHz
0.2
−
−
pF
11
RISO
Isolation Resistance
=
500 VDC, T = 25°C
10
−
W
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
H11G1M, H11G2M
TYPICAL PERFORMANCE CURVES
100
10
1
Normalized to:
V
= 5 V
CE
I
= 1 mA
F
T
= 25°C
I
F
= 50 mA
10
A
I
I
= 5 mA
= 1 mA
Normalized to:
F
V
= 5 V
CE
I
= 1 mA
F
F
1
0.1
I
F
= 0.5 mA
0.1
0.01
0.001
0.01
1
10
80
100 120
0.1
−60 −40 −20
0
20
40
60
I
F,
LED FORWARD CURRENT (mA)
T , AMBIENT TEMPERATURE (°C)
A
Figure 2. Normalized Output Current vs.
Temperature
Figure 1. Output Current vs. Input Current
100
10
1000
100
10
Normalized to:
V
= 5 V
CE
F
V
CE
= 80 V
I
= 50 mA
F
I
= 1 mA
T
= 25°C
A
I = 10 mA
I
= 10 mA
F
I
= 2 mA
V
CE
= 30 V
F
F
I
= 1 mA
1
V
CE
= 10 V
I
F
= 0.5 mA
1
0.1
0.01
0.1
0.01
10
1
0
10
20
30
40
50
60
70
80
90 100
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
TA, AMBIENT TEMPERATURE (°C)
Figure 3. Output Current vs. Collector−Emitter
Figure 4. Collector−Emitter Dark Current vs.
Voltage
Ambient Temperature
10
R
L
= 10 W
R = 100 W
L
R
L
= 1 kW
1
Normalized to:
= 5 V
V
F
CE
I
= 10 mA
RL = 100 W
0.1
0.1
1
10
t
on
+ t , TOTAL SWITCHING SPEED (NORMALIZED)
off
Figure 5. Input Current vs. Total Switching Speed
(Typical Values)
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4
H11G1M, H11G2M
REFLOW PROFILE
Max. Ramp−up Rate = 3°C/S
Max. Ramp−down Rate = 6°C/S
TP
TL
260
240
220
200
180
160
140
120
100
80
tP
Tsmax
tL
Preheat Area
Tsmin
ts
60
40
20
0
120
240
360
Time 25°C to Peak
Time (seconds)
Profile Feature
Pb−Free Assembly Profile
150°C
200°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (t S) from (Tsmin to Tsmax)
60–120 seconds
3°C/second max.
217°C
Ramp−up Rate (t L to tP
)
Liquidous Temperature (TL)
Time (t L) Maintained Above (TL)
Peak Body Package Temperature
60–150 seconds
260°C +0°C / –5°C
30 seconds
) within 5°C of 260°C
Time (t P
6°C/second max.
Ramp−down Rate (TP to TL)
Time 25°C to Peak Temperature
8 minutes max.
Figure 6. Reflow Profile
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5
H11G1M, H11G2M
ORDERING INFORMATION
Part Number
H11G1M
†
Package
Shipping
DIP 6−Pin
50 Units / Tube
50 Units / Tube
1000 / Tape & Reel
50 Units / Tube
50 Units / Tube
H11G1SM
SMT 6−Pin (Lead Bend)
H11G1SR2M
H11G1VM
SMT 6−Pin (Lead Bend)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
H11G1SVM
SMT 6−Pin (Lead Bend),
DIN EN/IEC60747−5−5 Option
H11G1SR2VM
H11G1TVM
SMT 6−Pin (Lead Bend),
1000 / Tape & Reel
50 Units / Tube
DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4” Lead Spacing,
DIN EN/IEC60747−5−5 Option
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
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