H11N1SR2M [ONSEMI]
6 引脚 DIP 低输入电流施密特触发器输出光耦合器;
| 型号： | H11N1SR2M |
| 厂家： | 
ONSEMI |
| 描述： | 6 引脚 DIP 低输入电流施密特触发器输出光耦合器 输出元件 光电 触发器 |
| 文件： | 总9页 (文件大小：332K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H11N1M
6-Pin DIP Schmitt Trigger
Output Optocoupler
The H11N1M has a high−speed integrated circuit detector optically
coupled to an aluminium gallium arsenide (AlGaAs) infrared emitting
diode. The output incorporates a Schmitt trigger, which provides
hysteresis for noise immunity and pulse shaping. The detector circuit
is optimized for simplicity of operation and utilizes an open−collector
output for maximum application flexibility.
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Features
• High Data Rate, 5 MHz Typical (NRZ)
• Free from Latch−up and Oscillation Throughout Voltage and
Temperature Ranges
PDIP6
CASE 646BY
• Microprocessor Compatible Drive
• Logic Compatible Output Sinks 16 mA at 0.5 V Maximum
• Guaranteed On/Off Threshold Hysteresis
• Wide Supply Voltage Capability, Compatible with All Popular Logic
Systems
• Safety and Regulatory Approvals:
♦ UL1577, 4,170 VAC
for 1 Minute
RMS
♦ DIN−EN/IEC60747−5−5, 850 V Peak Working Insulation Voltage
PDIP6
CASE 646BZ
PDIP6
CASE 646BX
Applications
• Logic−to−Logic Isolator
• Programmable Current Level Sensor
MARKING DIAGRAM
• Line Receiver − Eliminate Noise and Transient Problems
• AC to TTL Conversion − Square Wave Shaping
• Interfaces Computers with Peripherals
• Isolated Power MOS Driver for Power Supplies
H11N1
V X YY Q
SCHEMATIC
1
H11N1 = Device Code
V
Anode
CC
V
= DIN EN/IEC60747−5−5 Option
= (only appears on component
= ordered with this option)
= One−Digit Year Code, e.g., “6”
= Digit Work Week,
Cathode
GND
Truth Table
Input
X
YY
Output
V
NC
O
= Ranging from “01” to “53”
= Assembly Package Code
H
L
L
Q
H
(Top View)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
April, 2019 − Rev. 3
H11N1M/D
H11N1M
Table 1. SAFETY AND INSULATION RATINGS As per DIN EN/IEC 60747−5−5, this optocoupler is suitable for “safe electrical
insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Characteristics
Installation Classifications per DIN VDE 0110/1.89 Table 1,
For Rated Mains Voltage
< 150 V
< 300 V
I–IV
I–IV
RMS
RMS
Climatic Classification
55/100/21
2
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
175
Symbol
Parameter
Input−to−Output Test Voltage, Method A, V
Value
Unit
V
PR
x 1.6 = V
,
1360
V
peak
IORM
PR
Type and Sample Test with t = 10 s, Partial Discharge < 5 pC
m
Input−to−Output Test Voltage, Method B, V
x 1.875 = V
,
1594
V
peak
IORM
PR
100% Production Test with t = 1 s, Partial Discharge < 5 pC
m
V
Maximum Working Insulation Voltage
Highest Allowable Over−Voltage
External Creepage
850
6,000
≥ 7
V
V
IORM
peak
V
IOTM
peak
mm
mm
mm
mm
°C
External Clearance
≥ 7
External Clearance (for Option TV, 0.4″ Lead Spacing)
Distance Through Insulation (Insulation Thickness)
Case Temperature (Note 1)
≥ 10
≥ 0.5
175
350
800
DTI
T
S
I
Input Current (Note 1)
mA
mW
W
S,INPUT
P
Output Power (Note 1)
S,OUTPUT
9
R
Insulation Resistance at T , V = 500 V (Note 1)
> 10
IO
S
IO
1. Safety limit values – maximum values allowed in the event of a failure.
Table 2. ABSOLUTE MAXIMUM RATINGS T = 25°C unless otherwise specified.
A
Symbol
Parameter
Value
Units
TOTAL DEVICE
T
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
−40 to +125
−40 to +85
−40 to +125
260 for 10 seconds
210
°C
°C
STG
OPR
T
T
J
°C
T
°C
SOL
P
Total Device Power Dissipation at 25°C
Derate above 25°C
mW
mW/°C
D
2.94
EMITTER
I
Continuous Forward Current
Reverse Voltage
30
6
mA
V
F
V
R
I (pk)
Forward Current − Peak (1 ms pulse, 300 pps)
LED Power Dissipation
100
60
mA
mW
F
P
D
DETECTOR
P
V
Detector Power Dissipation
150
0 to 16
3 to 16
50
mW
V
D
O
V
45
V
65
Allowed Range
Allowed Range
V
CC
V
I
O
I Output Current
4
mA
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
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2
H11N1M
Table 3. ELECTRICAL CHARACTERISTICS T = 25°C unless otherwise specified
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
EMITTER
V
F
Input Forward Voltage
I = 10 mA
F
1.4
2.0
V
I = 0.3 mA
F
0.75
1.25
I
Reverse Current
Capacitance
V
= 5 V
10
mA
R
R
C
V = 0 V, f = 1.0 MHz
100
pF
J
DETECTOR
V
Operating Voltage Range
Supply Current
4
15
10
V
CC
I
I = 0 mA, V = 5 V
6
mA
mA
CC(off)
F
CC
I
Output Current, High
I = 0 mA, V = V = 15 V
100
OH
F
CC
O
Table 4. TRANSFER CHARACTERISTICS T = 25°C unless otherwise specified
A
Symbol
Parameter
Supply Current
Test Conditions
I = 10 mA, V = 5 V
Min
Typ
Max
10.0
0.5
Units
mA
V
I
6.5
CC(on)
F
CC
V
OL
Output Voltage, Low
R = 270 W, V = 5 V,
L CC
I = I
Maximum
F
F(on)
I
Turn−On Threshold Current
Turn−Off Threshold Current
Hysteresis Ratio
R = 270 W, V = 5 V (Note 2)
0.8
0.3
3.2
mA
mA
F(on)
L
CC
I
R = 270 W, V = 5 V
L CC
F(off)
I
/ I
R = 270 W, V = 5 V
0.65
0.95
F(off) F(on)
L
CC
Table 5. SWITCHING SPEED
Symbol
AC Characteristics
Test Conditions
Min
Typ
Max
Units
t
on
Turn−On Time
C = 120 pF, t = 1 ms,
E
100
330
ns
P
R
= (Note 3), Figure 7
t
Rise Time
C = 120 pF, t = 1 ms,
E
7.5
150
12
5
ns
ns
r
P
R
= (Note 3), Figure 7
t
Turn−Off Time
Fall Time
C = 120 pF, t = 1 ms,
330
off
P
R
= (Note 3), Figure 7
E
t
C = 120 pF, t = 1 ms,
ns
f
P
R
= (Note 3), Figure 7
E
Data Rate
MHz
Table 6. ISOLATION CHARACTERISTICS
Symbol
Parameter
Input−Output Isolation Voltage
Isolation Capacitance
Test Conditions
Min
Typ
Max
Units
V
ISO
C
ISO
R
ISO
t = 1 Minute
4170
VAC
RMS
V
= 0 V, f = 1 MHz
0.4
0.6
pF
I−O
11
Isolation Resistance
V
=
500 VDC, T = 25°C
10
W
I−O
A
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Maximum I
is the maximum current required to trigger the output. For example, a 3.2 mA maximum trigger current would require the
F(on)
LED to be driven at a current greater than 3.2 mA to guarantee the device will turn on. A 10% guard band is recommended to account for
degradation of the LED over its lifetime. The maximum allowable LED drive current is 30 mA.
3. H11N1: R = 910 W
E
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3
H11N1M
TYPICAL CHARACTERISTICS
1.4
6
5
4
3
2
1
0
TURN ON THRESHOLD
TURN OFF THRESHOLD
V
OH
1.2
V
= 5 V
= 270 Ω
= 25_C
CC
L
R
T
1.0
0.8
0.6
0.4
0.2
0.0
A
I
I
F(ON)
F(OFF)
Hysteresis area
shaded for illustration
NORMALIZED TO:
TURN ON THRESHOLD AT
V
= 5 V, T = 25_C
CC
A
V
OL
0
2
4
6
8
10
12
14
16
0
1
2
3
4
V
– SUPPLY VOLTAGE (V)
CC
I
– INPUT CURRENT (mA)
F
Figure 1. Transfer Characteristics
Figure 2. Threshold Current vs. Supply Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
F(On)
100
I
F(Off)
I
V
= I
F
F(ON)
= 5 V
CC
10
NORMALIZED TO :
V
= 5 V
CC
T
= 25_C
A
1
0
10
20
30
40
50
60
70
0.0
0.2
0.4
0.6
0.8
1.0
– TEMPERATURE (_C)
T
A
VO – OUTPUT VOLTAGE, LOW (V)
Figure 3. Threshold Current vs. Temperature
Figure 4. Load Current vs. Output Voltage
100
12
T
= −40_C
A
10
8
T
= 85_C
A
T
= −40_C
A
T
= 25_C
= 85_C
A
T
= 25_C
A
6
10
T
A
4
ON STATE
OFF STATE I
I
= 10 mA
F
F
2
= 0
1
0
1.0
1.2
1.4
1.6
1.8
2.0
2
4
6
8
10
12
14
16
VF – FORWARD VOLTAGE (V)
V
– SUPPLY VOLTAGE (V)
CC
Figure 5. Supply Current vs. Supply Voltage
Figure 6. LED Forward Current vs. Forward
Voltage
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4
H11N1M
TEST CIRCUIT
C
v
r
I6
5 V
IF
V
5 V
50%
toff
IN
1
2
H11N1M
6
RE
RL
0
270 W
4
VIN
VO
ton
0.1mF
tr = tf ≤ 0.01 ms
Z = 50 W
5
10%
90%
VO
tf
tr
Figure 7. Switching Test Circuit and Waveforms
REFLOW PROFILE
300
260_C
280
260
240
220
200
180
160
140
120
100
80
>245_C = 42 Sec
Time above
183_C = 90 Sec
_C
1.822_C/Sec Ramp up rate
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
Figure 8. Reflow Profile
ORDERING INFORMATION
Part Number
Package
Packing Method
Tube (50 Units)
H11N1M
H11N1SM
DIP 6−Pin
SMT 6−Pin (Lead Bend)
SMT 6−Pin (Lead Bend)
Tube (50 Units)
H11N1SR2M
H11N1VM
Tape and Reel (1000 Units)
Tube (50 Units)
DIP 6−Pin, DIN EN/IEC60747−5−5 Option
H11N1SVM
H11N1SR2VM
H11N1TVM
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
SMT 6−Pin (Lead Bend), DIN EN/IEC60747−5−5 Option
DIP 6−Pin, 0.4″ Lead Spacing, DIN EN/IEC60747−5−5 Option
Tube (50 Units)
Tape and Reel (1000 Units)
Tube (50 Units)
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BX
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13449G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BY
ISSUE A
DATE 15 JUL 2019
A
B
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13450G
PDIP6 8.51x6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP6 8.51x6.35, 2.54P
CASE 646BZ
ISSUE O
DATE 31 JUL 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13451G
PDIP6 8.51X6.35, 2.54P
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
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and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
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ADDITIONAL INFORMATION
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