HCPL2630 [ONSEMI]

8 引脚 DIP 双沟道 10 MB/s 逻辑门极输出光耦合器(不建议用于新设计,新的对等零件编号为 HCPL26xxM);
HCPL2630
型号: HCPL2630
厂家: ONSEMI    ONSEMI
描述:

8 引脚 DIP 双沟道 10 MB/s 逻辑门极输出光耦合器(不建议用于新设计,新的对等零件编号为 HCPL26xxM)

输出元件 光电
文件: 总14页 (文件大小:404K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DATA SHEET  
www.onsemi.com  
High-Speed 10 MBit/s  
Logic Gate Optocouplers  
PDIP8 6.6x3.81, 2.54P  
CASE 646BW  
8
1
Single-Channel: 6N137,  
HCPL2601, HCPL2611  
Dual-Channel: HCPL2630,  
HCPL2631  
PDIP8 9.655x6.6, 2.54P  
CASE 646CQ  
8
8
1
1
Description  
The 6N137, HCPL2601, HCPL2611 singlechannel and  
HCPL2630, HCPL2631 dualchannel optocouplers consist of a  
850 nm AlGaAS LED, optically coupled to a very high speed  
integrated photodetector logic gate with a strobable output. This  
output features an open collector, thereby permitting wired OR  
outputs. The coupled parameters are guaranteed over the temperature  
range of 40°C to +85°C. A maximum input signal of 5 mA will  
provide a minimum output sink current of 13 mA (fan out of 8).  
An internal noise shield provides superior common mode rejection  
of typically 10 kV/s. The HCPL2601 and HCPL2631 has a minimum  
CMR of 5 kV/s. The HCPL2611 has a minimum CMR of 10 kV/s.  
PDIP8 GW  
CASE 709AC  
MARKING DIAGRAM  
ON  
2601  
VXXYYT1  
2601  
V
= Device Number  
Features  
= VDE mark (Note: Only Appears on  
Parts Ordered with VDE Option – See  
Order Entry Table)  
= TwoDigit Year Code, e.g., ‘03’  
= TwoDigit Work Week, Ranging from  
‘01’ to ‘53’  
Very High Speed – 10 MBit/s  
Superior CMR – 10 kV/s  
Double working voltage 480 V  
Fanout of 8 Over 40°C to +85°C  
Logic Gate Output  
Strobable Output  
Wired ORopen Collector  
U.L. Recognized (File # E90700)  
XX  
YY  
T1  
= Assembly Package Code  
ORDERING INFORMATION  
See detailed ordering and shipping information on page 10 of  
this data sheet.  
Applications  
Ground Loop Elimination  
LSTTL to TTL, LSTTL or 5volt CMOS  
Line Receiver, Data Transmission  
Data Multiplexing  
Switching Power Supplies  
Pulse Transformer Replacement  
Computerperipheral Interface  
© Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
August, 2021 Rev. 3  
HCPL2631/D  
SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
SCHEMATICS  
VCC  
N/C  
+
+
1
8
1
8
VCC  
VF1  
_
VE  
V01  
2
3
4
7
6
5
2
3
4
7
6
5
VF  
_
_
VO  
V02  
VF2  
+
N/C  
GND  
GND  
6N137, HCPL2601,  
HCPL2611  
HCPL2630,  
HCPL2631  
A 0.1 F bypass capacitor must be connected between pins 8 and 5 (Note 1).  
Figure 1. Schematics  
TRUTH TABLE (Positive Logic)  
Input  
Enable  
Output  
H
L
H
H
L
H
H
H
L
H
L
L
L
H
L
NC  
NC  
H
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2
SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Symbol  
Parameter  
Value  
Unit  
°C  
T
Storage Temperature  
Operating Temperature  
55 to +125  
40 to +85  
260 for 10 s  
STG  
OPR  
T
°C  
T
SOL  
Lead Solder Temperature (for Wave Soldering Only)*  
°C  
EMITTER  
I
DC/Average Forward Input Current  
Single Channel  
Dual Channel (Each Channel)  
Single Channel  
50  
30  
mA  
V
F
V
V
Enable Input Voltage Not to Exceed V by More than  
500 mV  
5.5  
E
CC  
Reverse Input Voltage  
Power Dissipation  
Each Channel  
Single Channel  
5.0  
100  
45  
V
R
P
mW  
I
Dual Channel (Each Channel)  
DETECTOR  
V
Supply Voltage  
Output Current  
7.0  
V
CC  
(1 Minute Max)  
I
Single Channel  
Dual Channel (Each Channel)  
Each Channel  
25  
50  
7.0  
85  
60  
mA  
mA  
V
O
V
P
Output Voltage  
O
Collector Output Power Dissipation  
Single Channel  
mW  
O
Dual Channel (Each Channel)  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
*For peak soldering reflow, please refer to the Reflow Profile on page 9.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
0
Max  
250  
15  
Unit  
A  
mA  
V
I
FL  
Input Current, Low Level  
Input Current, High Level  
Supply Voltage, Output  
Enable Voltage, Low Level  
Enable Voltage, High Level  
Low Level Supply Current  
Fan Out (TTL Load)  
I
FH  
*6.3  
4.5  
0
V
CC  
5.5  
0.8  
V
EL  
V
V
EH  
2.0  
40  
V
CC  
V
T
A
+85  
8
°C  
N
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond  
the Recommended Operating Ranges limits may affect device reliability.  
*6.3 mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0 mA or less.  
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3
SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
ELECTRICAL CHARACTERISTICS (T = 0°C to 70°C unless otherwise specified)  
A
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
INDIVIDUAL COMPONENT CHARACTERISTICS  
EMITTER  
V
Input Forward Voltage  
I = 10 mA  
1.4  
1.8  
1.75  
V
V
F
F
T = 25°C  
A
B
VR  
Input Reverse Breakdown  
Voltage  
I
R
= 10 A  
5.0  
C
Input Capacitance  
V = 0, f = 1 MHz  
60  
pF  
IN  
F
V
/
T
Input Diode Temperature  
Coefficient  
I = 10 mA  
F
1.4  
mV/°C  
F
A
DETECTOR  
I
High Level Supply Current  
Low Level Supply Current  
V
E
= 5.5 V, I = 0 mA,  
Single Channel  
Dual Channel  
7
10  
9
10  
15  
mA  
mA  
CCH  
CC  
F
V = 0.5 V  
I
Single Channel  
Dual Channel  
V
CC  
= 5.5 V, I = 10 mA  
13  
CCL  
F
V = 0.5 V  
E
14  
0.8  
0.6  
21  
I
EL  
Low Level Enable Current  
High Level Enable Current  
High Level Enable Voltage  
Low Level Enable Voltage  
V
CC  
V
CC  
V
CC  
V
CC  
= 5.5 V, V = 0.5 V  
1.6  
1.6  
mA  
mA  
V
E
I
= 5.5 V, V = 2.0 V  
EH  
E
V
= 5.5 V, I = 10 mA  
2.0  
EH  
F
V
= 5.5 V, I = 10 mA (Note 3)  
0.8  
V
EL  
F
SWITCHING CHARACTERISTICS (T = 40°C to +85°C, V = 5 V, I = 7.5 mA unless otherwise specified)  
A
CC  
F
T
Propagation Delay Time to  
Output HIGH Level  
R = 350 C = 15 pF  
T = 25°C  
20  
45  
75  
100  
75  
100  
35  
ns  
ns  
PLH  
PHL  
L
,
L
A
(Note 4) (Figure 13)  
T
Propagation Delay Time to  
Output LOW Level  
T = 25°C (Note 5)  
A
25  
45  
R = 350 , C = 15 pF (Figure 13)  
L
L
|T  
–T  
|
Pulse Width Distortion  
R = 350 , C = 15 pF (Figure 13)  
3
ns  
ns  
ns  
ns  
PHL PLH  
L
L
t
r
Output Rise Time (10–90%)  
Output Rise Time (90–10%)  
R = 350 , C = 15 pF (Note 6) (Figure 13)  
50  
12  
20  
L
L
t
f
R = 350 , C = 15 pF (Note 7) (Figure 13)  
L
L
t
t
Enable Propagation Delay  
Time to Output HIGH Level  
I = 7.5 mA, V = 3.5 V, R = 350 , C = 15 pF  
ELH  
F
EH  
L
L
(Note 8) (Figure 14)  
Enable Propagation Delay  
Time to Output LOW Level  
I = 7.5 mA, V = 3.5 V, R = 350 , C = 15pF  
20  
ns  
EHL  
F
EH  
L
L
(Note 9) (Figure 14)  
|CM |  
Common Mode Transient  
Immunity (at Output HIGH  
Level)  
T = 25°C, |V | = 50 V 6N137, HCPL2630  
10,000  
10,000  
V/s  
H
A
CM  
(Peak), I = 0 mA,  
F
V
OH  
(Min.) = 2.0 V,  
HCPL2601, HCPL2631  
HCPL2611  
5000  
R = 350 (Note 10)  
L
(Figure 15)  
|V | = 400 V  
CM  
10,000 15,000  
V/s  
|CM |  
Common Mode Transient  
Immunity (at Output LOW  
Level)  
R = 350 , I = 7.5 mA, 6N137, HCPL2630  
10,000  
L
L
OL  
F
V
(Max.) = 0.8 V,  
T = 25°C (Note 11)  
A
HCPL2601, HCPL2631  
5000  
10,000  
(Figure 15)  
|V | = 400 V  
CM  
HCPL2611  
10,000 15,000  
TRANSFER CHARACTERISTICS (T = 40°C to +85°C unless otherwise specified)  
A
I
HIGH Level Output Current  
LOW Level Output Current  
Input Threshold Current  
V
= 5.5 V, V = 5.5 V, I = 250 A, V = 2.0V  
.35  
3
100  
0.6  
5
A  
V
OH  
CC  
O
F
E
(Note 2)  
V
V
CC  
(Note 2)  
= 5.5 V, I = 5 mA, V = 2.0 V, I = 13 mA  
OL  
F
E
CL  
I
V
CC  
= 5.5 V, V = 0.6 V, V = 2.0 V, I = 13 mA  
mA  
FT  
O
E
OL  
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SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
ELECTRICAL CHARACTERISTICS (T = 0°C to 70°C unless otherwise specified) (continued)  
A
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Unit  
ISOLATION CHARACTERISTICS (T = 40°C to +85°C unless otherwise specified)  
A
I
InputOutput Insulation  
Relative Humidity = 45%, T = 25°C, t = 5 s,  
IO  
1.0*  
A  
IO  
A
Leakage Current  
V
= 3000 VDC (Note 12)  
V
Withstand Insulation Test  
Voltage  
RH < 50%, T = 25°C, I  
2 A, t = 1 min.  
2500  
V
RMS  
ISO  
A
IO  
(Note 12)  
12  
R
C
Resistance (Input to Output)  
V
= 500 V (Note 12)  
10  
IO  
IO  
IO  
Capacitance (Input to Output) f = 1 MHz (Note 12)  
0.6  
pF  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
*All Typicals at V = 5 V, T = 25°C  
CC  
A
1. The V supply to each optoisolator must be bypassed by a 0.1F capacitor or larger. This can be either a ceramic or solid tantalum capacitor  
CC  
with good high frequency characteristic and should be connected as close as possible to the package V and GND pins of each device.  
CC  
2. Each channel.  
3. Enable Input – No pull up resistor required as the device has an internal pull up resistor.  
4. t  
– Propagation delay is measured from the 3.75 mA level on the HIGH to LOW transition of the input current pulse to the 1.5 V level on  
PLH  
the LOW to HIGH transition of the output voltage pulse.  
5. t – Propagation delay is measured from the 3.75 mA level on the LOW to HIGH transition of the input current pulse to the 1.5 V level on  
PHL  
the HIGH to LOW transition of the output voltage pulse.  
6. t – Rise time is measured from the 10% to the 90% levels on the LOW to HIGH transition of the output pulse.  
r
7. t – Fall time is measured from the 90% to the 10% levels on the HIGH to LOW transition of the output pulse.  
f
8. t  
– Enable input propagation delay is measured from the 1.5 V level on the HIGH to LOW transition of the input voltage pulse to the 1.5 V  
ELH  
level on the LOW to HIGH transition of the output voltage pulse.  
9. t – Enable input propagation delay is measured from the 1.5 V level on the LOW to HIGH transition of the input voltage pulse to the 1.5 V  
EHL  
level on the HIGH to LOW transition of the output voltage pulse.  
10.CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the HIGH state (i.e., V  
> 2.0 V).  
H
OUT  
Measured in volts per microsecond (V/s).  
11. CM – The maximum tolerable rate of rise of the common mode voltage to ensure the output will remain in the LOW output state (i.e.,  
L
OUT  
V
< 0.8 V). Measured in volts per microsecond (V/s).  
12.Device considered a twoterminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together.  
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5
 
SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
TYPICAL PERFORMANCE CURVES  
0.8  
Conditions:  
30  
16  
10  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I = 5 mA  
F
V
V
= 2 V  
E
= 5.5 V  
CC  
I
OL  
= 12.8 mA  
1
0.1  
I
OL  
= 16 mA  
I
OL  
= 6.4 mA  
I
OL  
= 9.6 mA  
0.01  
0.001  
40  
20  
0
20  
40  
60  
80  
0.9  
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
1.6  
T , AMBIENT TEMPERATURE (°C)  
A
V , FORWARD VOLTAGE (V)  
F
Figure 2. Low Level Output Voltage vs.  
Ambient Temperature  
Figure 3. Input Diode Forward Voltage vs.  
Forward Current  
120  
100  
80  
60  
40  
20  
0
50  
V
= 5 V  
I = 15 mA  
CC  
F
45  
40  
35  
30  
25  
20  
I = 10 mA  
F
R = 4 k(T  
)
)
L
PLH  
I = 5 mA  
F
R = 1 k(T  
L
PLH  
Conditions:  
V
V
V
= 5 V  
= 2 V  
= 0.6 V  
CC  
R = 1 k  
L
R = 350 (t  
L
)
PLH  
E
R = 4 k(T  
)
L
PHL  
OL  
R = 350 k  
L
5
7
9
11  
13  
15  
40  
20  
0
20  
40  
60  
80  
I , FORWARD CURRENT (mA)  
F
T , AMBIENT TEMPERATURE (°C)  
A
Figure 4. Switching Time vs. Forward Current  
Figure 5. Low Level Output vs.  
Ambient Temperature  
6
5
4
3
2
1
0
4
Conditions:  
V
CC  
V
OL  
= 5.0 V  
= 0.6 V  
3
2
1
R = 350  
R = 1 kꢂ  
L
L
R = 1 k  
L
R = 4 k  
L
R = 4 k  
R = 350  
L
L
40  
20  
0
20  
40  
60  
80  
0
1
2
3
4
5
6
T , AMBIENT TEMPERATURE (°C)  
A
I , FORWARD CURRENT (mA)  
F
Figure 6. Input Threshold Current vs.  
Ambient Temperature  
Figure 7. Output Voltage vs. Input Forward Current  
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SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
TYPICAL PERFORMANCE CURVES (Continued)  
80  
60  
40  
20  
0
600  
500  
400  
300  
200  
100  
0
R = 4 k(tr)  
L
R = 4 k  
L
Conditions:  
I = 7.5 mA  
Conditions:  
I = 7.5 mA  
F
F
V
CC  
= 5 V  
V
CC  
= 5 V  
R = 1 k  
L
R = 4 k  
(tf)  
L
]
R = 350  
L
R = 1 k  
L
R = 1 k(tr)  
L
R = 350 (tr)  
L
R = 350  
L
60 40 20  
0
20  
40  
60  
80  
100  
60 40 20  
0
20  
40  
60  
80  
100  
T , TEMPERATURE (°C)  
A
T , TEMPERATURE (°C)  
A
Figure 8. Pulse Width Distortion vs. Temperature  
Figure 9. Rise and Fall Time vs. Temperature  
120  
100  
120  
R = 4 kTPLH  
L
100  
80  
60  
40  
20  
R = 4 k(TELH)  
L
80  
60  
40  
20  
0
R = 1 k  
L
R = 4 k  
R = 350  
L
TPHL  
L
]
R = 350  
L
R = 1 k  
(TEHL)  
L
]
R = 4 k  
L
R = 1 k(TELH)  
L
R = 1 kTPLH  
L
R = 350 (TELH)  
L
R = 350 TPLH  
L
60 40 20  
0
20  
40  
60  
80  
100  
60 40 20  
0
20  
40  
60  
80  
100  
T , TEMPERATURE (°C)  
A
T , TEMPERATURE (°C)  
A
Figure 10. Enable Propagation Delay vs. Temperature  
Figure 11. Switching Time vs. Temperature  
20  
Conditions:  
V
V
V
= 5.5 V  
= 5.5 V  
= 2.0 V  
CC  
O
15  
10  
5
E
I = 250 A  
F
0
60 40 20  
0
20  
40  
60  
80  
100  
T , TEMPERATURE (°C)  
A
Figure 12. High Level Output Current vs. Temperature  
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SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
TEST CIRCUITS  
Pulse  
Generator  
tr = 5 ns  
+5 V  
Z
O
= 50 ꢂ  
IF = 7.5 mA  
VCC  
IF = 3.75 mA  
Input  
(IF)  
1
2
3
4
8
7
6
5
tPHL  
tPLH  
Output  
(VO)  
.1 F  
bypass  
RL  
CL  
1.5 V  
Output  
(VO)  
Input  
90%  
10%  
Monitor  
(IF)  
Output  
(VO)  
47  
GND  
tf  
tr  
Figure 13. Test Circuit and Waveforms for tPLH, tPHL, tr and tf  
Pulse  
Generator  
tr = 5 ns  
Input  
Monitor  
(V )  
E
Z
O
= 50 ꢂ  
+5 V  
3.0 V  
1.5 V  
Input  
(VE)  
VCC  
1
2
8
7
tEHL  
tELH  
7.5 mA  
Output  
(VO)  
RL  
CL  
.1 F  
bypass  
1.5 V  
Output  
(VO)  
3
4
6
5
GND  
Figure 14. Test Circuit tEHL and tELH  
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SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
TEST CIRCUITS (Continued)  
VCC  
1
2
3
4
8
7
6
5
+5 V  
IF  
.1 F  
bypass  
350  
A
B
Output  
(VO)  
VFF  
GND  
VCM  
Pulse Gen  
Peak  
VCM  
0 V  
5 V  
VO  
CMH  
Switching Pos. (A), IF = 0  
VO (Min)  
V (Max)  
O
Switching Pos. (B), IF = 7.5 mA  
VO  
CML  
0.5 V  
Figure 15. Test Circuit Common Mode Transient Immunity  
REFLOW PROFILE  
300  
215C, 10–30 s  
250  
225C peak  
200  
150  
Time above 183C, 60–150 s  
Ramp up = 3C/s  
100  
50  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
Time (Minute)  
Peak reflow temperature: 225C (package surface temperature)  
Time of temperature higher than 183C for 60–150 seconds  
One time soldering reflow is recommended  
Figure 16. Reflow Profile  
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9
SingleChannel: 6N137, HCPL2601, HCPL2611 DualChannel: HCPL2630, HCPL2631  
ORDERING INFORMATION  
Option  
Example Part Number  
Description  
S
6N137S  
PDIP8 GW, CASE 709AC  
Surface Mount Lead Bend  
SD  
W
6N137SD  
6N137W  
PDIP8 GW, CASE 709AC  
Surface Mount; Tape and Reel  
PDIP8 6.6x3.81, 2.54P, CASE 646BW  
0.4” Lead Spacing  
V
6N137V  
PDIP8 9.655x6.6, 2.54P, CASE 646CQ  
VDE0884  
WV  
SV  
SDV  
6N137WV  
6N137SV  
6N137SDV  
PDIP8 6.6x3.81, 2.54P, CASE 646BW  
VDE0884; 0.4” Lead Spacing  
PDIP8 GW, CASE 709AC  
VDE0884; Surface Mount  
PDIP8 GW, CASE 709AC  
VDE0884; Surface Mount; Tape and Reel  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
10  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP8 6.6x3.81, 2.54P  
CASE 646BW  
ISSUE O  
DATE 31 JUL 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13445G  
PDIP8 6.6X3.81, 2.54P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP8 9.655x6.6, 2.54P  
CASE 646CQ  
ISSUE O  
DATE 18 SEP 2017  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13446G  
PDIP8 9.655X6.6, 2.54P  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
PDIP8 GW  
CASE 709AC  
ISSUE O  
DATE 31 JUL 2016  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON13447G  
PDIP8 GW  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
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