HGTG27N120BN [ONSEMI]
1200V，NPT IGBT;
| 型号： | HGTG27N120BN |
| 厂家： | 
ONSEMI |
| 描述： | 1200V，NPT IGBT 局域网 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：387K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPT Series N-Channel IGBT
72 A, 1200 V
HGTG27N120BN
The HGTG27N120BN is Non−Punch Through (NPT) IGBT design.
This is a new member of the MOS gated high voltage switching IGBT
family. IGBTs combine the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
www.onsemi.com
C
G
Formerly Developmental Type TA49280.
E
Features
• 72 A, 1200 V, T = 25°C
C
E
C
G
• 1200 V Switching SOA Capability
• Typical Fall Time 140 ns at T = 150°C
J
• Short Circuit Rating
COLLECTOR
(BOTTOM SIDE
METAL)
• Low Conduction Loss
• Thermal Impedance SPICE Model Temperature Compensating
SABERt Model
TO−247−3LD SHORT LEAD
CASE 340CK
JEDEC STYLE
• Avalanche Rated
• This is a Pb−Free Device
MARKING DIAGRAM
$Y&Z&3&K
G27N120BN
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G27N120BN = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2020 − Rev. 3
HGTG27N120BN/D
HGTG27N120BN
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Parameter
Collector to Emitter Voltage
Symbol
BV
HGTG27N120BN
Unit
1200
V
CES
Collector Current Continuous
At T = 25°C
I
72
34
A
A
C
C25
At T = 110°C
I
C
C110
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
216
A
V
V
CM
V
GES
GEM
20
V
30
Switching Safe Operating Area at T = 150°C (Figure 2)
SSOA
150 A at 1200 V
J
Power Dissipation Total at T = 25°C
P
500
4.0
W
W/°C
W/°C
°C
C
D
Power Dissipation Derating T > 25°C
C
Forward Voltage Avalanche Energy (Note 2)
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
E
AV
135
T , T
−55 to 150
260
J
STG
T
°C
L
Short Circuit Withstand Time (Note 3) at V = 15 V
t
8
ms
GE
SC
SC
Short Circuit Withstand Time (Note 3) at V = 12 V
t
15
ms
GE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. I = 30 A, L = 400 mH, T = 125°C.
CE
CE(PK)
J
°
3. V
= 960 V, T = 125 C, R = 3 W.
J G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
Test Condition
= 250 mA, V = 0 V
Min
1200
15
−
Typ
−
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
I
CES
ECS
C
GE
= 10 mA, V = 0 V
−
−
V
C
GE
V
= 1200 V
T
T
T
T
T
= 25°C
−
250
−
mA
mA
mA
V
CES
CE
C
C
C
C
C
= 125°C
= 150°C
= 25°C
−
300
−
−
4
Collector to Emitter Saturation Voltage
V
I
I
= 27 A, V = 15 V
−
2.45
3.8
6.6
−
2.7
4.2
−
CE(SAT)
C
GE
= 150°C
−
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
= 250 mA, V = V
GE
6
V
GE(TH)
C
CE
I
V
=
20 V
−
250
−
nA
A
GES
GE
SSOA
T = 150°C, R = 3 W, V = 15 V,
150
−
J
G
GE
= 1200 V
L = 200 mH, V
CE(PK)
Gate to Emitter Plateau Voltage
V
I
I
= I
, V = 0.5 BV
CES
−
−
−
−
−
−
−
−
−
−
9.2
270
350
24
−
V
GEP
C
C110
CE
On−State Gate Charge
Q
= 27 A,
= 600 V
V
= 15 V
= 20 V
325
420
30
nC
nC
ns
G(ON)
C
V
GE
CE
V
GE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 27 A,
CE
t
20
25
ns
rI
d(OFF)I
V
V
R
= 960 V
= 15 V,
= 3 W,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
195
80
240
120
−
ns
L = 1 mH,
Test Circuit (Figure 18)
t
fI
ns
Turn−On Energy (Note 5)
Turn−On Energy (Note 5)
Turn−Off Energy (Note 4)
E
E
E
2.2
2.7
2.3
mJ
mJ
mJ
ON1
ON2
OFF
3.3
2.8
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2
HGTG27N120BN
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
C
Parameter
Current Turn−On Delay Time
Current Rise Time
Symbol
Test Condition
Min
−
Typ
22
Max
28
Unit
ns
t
IGBT and Diode at T = 150°C,
d(ON)I
J
I
= 27 A,
CE
GE
CE
t
−
20
25
ns
rI
d(OFF)I
V
V
= 960 V,
= 15 V,
= 3 W,
Current Turn−Off Delay Time
Current Fall Time
t
−
220
140
2.7
5.1
3.4
−
280
200
−
ns
R
G
L = 1 mH,
t
fI
−
ns
Test Circuit (Figure 18)
Turn−On Energy (Note 5)
Turn−On Energy (Note 5)
Turn−Off Energy (Note 4)
Thermal Resistance Junction To Case
E
ON1
E
ON2
E
OFF
−
mJ
mJ
mJ
°C/W
−
6.5
4.2
0.25
−
R
−
q
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
5. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
J
in Figure 18.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
80
70
60
50
40
30
20
200
160
120
80
T
J
= 150°C, R = 3 W, V = 15 V, L = 200 mH
G
GE
V
GE
= 15 V
40
10
0
0
0
200
400
600
800
1000
1200
1400
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
50
40
30
20
10
0
500
400
300
200
100
0
T
= 150°C, RG = 3 W, L = 1 mH, VCE = 960 V
J
V
CE
= 960 V, R = 3 W, T = 125°C
G J
T
C
V
GE
ISC
75°C 15 V
75°C 12 V
100
50
f
f
P
= 0.05 / (t
= (P − P ) / (E
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.25°C/W, SEE NOTES
+ t
d(ON)I
)
MAX1
d(OFF)I
10
1
+ E
)
MAX2
D
C
ON2
OFF
C
tSC
T
C
V
GE
R
ØJC
110°C 15 V
110°C 12 V
11
12
13
14
15
16
5
10
20
60
I
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
CE
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
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3
HGTG27N120BN
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
140
120
100
80
200
160
120
80
DUTY CYCLE < 0.5%, V = 12 V
GE
250 ms PULSE TEST
DUTY CYCLE < 0.5%,
= 15 V
250 ms PULSE TEST
V
GE
T
C
= −55°C
T
C
= 25°C
T = 150°C
C
T
C
= −55°C
T
C
= 25°C
T = 150°C
C
60
40
40
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. COLLECTOR TO EMITTER ON−STATE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
15.0
6
R
= 3 W, L = 1 mH, V = 960 V
R
T
= 3 W, L = 1 mH, V = 960 V
CE
G
CE
G
12.5
10.0
7.5
5.0
2.5
0
5
4
3
2
1
0
= 150°C, V = 12 V or 15 V
J
GE
T
J
= 150°C, V = 12 V, V = 15 V
GE GE
T
J
= 25°C, V = 12 V or 15 V
GE
T
J
= 25°C, V = 12 V, V = 15 V
GE GE
5
10 15 20 25 30 35 40 45 50 55 60
5
10 15 20 25 30 35 40 45 50 55 60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. TURN−ON ENERGY LOSS vs.
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
40
35
30
25
20
15
80
70
60
50
40
30
20
10
0
R
= 3 W, L = 1 mH, V = 960 V
R = 3 W, L = 1 mH, V = 960 V
G CE
G
CE
T = 25°C, T = 150°C, V = 12 V
J
J
GE
T = 25°C, T = 150°C, V = 12 V
J
J
GE
T
J
= 25°C, T = 150°C, V = 15 V
J GE
T
J
= 25°C, T = 150°C, V = 15 V
J GE
5
10 15 20 25 30 35 40 45 50 55 60
5
10 15 20 25 30 35 40 45 50 55 60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
TO EMITTER CURRENT
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4
HGTG27N120BN
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
400
350
300
250
200
150
250
R
= 3 W, L = 1 mH, V = 960 V
CE
R
G
= 3 W, L = 1 mH, V = 960 V
CE
G
200
150
100
50
V
GE
= 12 V, V = 15 V, T = 150°C
GE J
T
J
= 150°C, V = 12 V or 15 V
GE
V
GE
= 12 V, V = 15 V, T = 25°C
GE J
T
J
= 25°C, V = 12 V or 15 V
GE
0
5
10 15 20 25 30 35 40 45 50 55 60
5
10 15 20 25 30 35 40 45 50 55 60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
16
14
12
10
8
350
300
250
200
150
100
50
I
= 2 mA, R = 22.2 W, T = 25°C
L C
G(REF)
DUTY CYCLE < 0.5%, V = 20 V
CE
250 ms PULSE TEST
V
= 1200 V
CE
V
CE
= 800 V
V
CE
= 400 V
6
T
C
= 25°C
4
T
C
= 150°C
T
C
= −55°C
2
0
0
7
8
9
10
11
12
13
14
15
0
50
100
150
200
250
300
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 13. TRANSFER CHARACTERISTIC
Figure 14. GATE CHARGE WAVEFORMS
40
35
30
25
20
15
10
5
10
DUTY CYCLE < 0.5%, T = 110°C
250 ms PULSE TEST
C
FREQUENCY = 1 MHz
CIES
8
6
4
2
0
V
GE
= 15 V
V
GE
= 10 V
CRES
COES
0
0.5
0
1.0 1.5 2.0
2.5
3.0
3.5 4.0
4.5
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 16. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
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5
HGTG27N120BN
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
10−1
10−2
0.5
0.2
t
0.1
1
P
0.05
D
t
0.02
0.01
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P x Z
x R ) + T
q
JC C
q
J
D
JC
SINGLE PULSE
10−4
10−5
10−3
10−2
10−1
100
101
t , RECTANGULAR PULSE DURATION (s)
1
Figure 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
TEST CIRCUIT AND WAVEFORMS
RHRP30120
90%
10%
V
GE
E
ON2
E
OFF
L = 1 mH
V
CE
R
G
= 3 W
90%
10%
d(OFF)I
+
I
CE
t
V
DD
= 960 V
t
rI
t
fI
−
t
d(ON)I
Figure 18. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 19. SWITCHING TEST WAVEFORMS
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6
HGTG27N120BN
HANDLING PRECAUTIONS FOR IGBTs
7. Gate Protection - These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Insulated Gate Bipolar Transistors are susceptible to gate−
insulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through the
device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
f
is defined by f
= 0.05 / (t
+ t
).
MAX1
MAX1
d(OFF)I
d(ON)I
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
and t
are defined in
d(OFF)I
d(ON)I
Figure 19. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
T
. t
is important when controlling output ripple
JM d(OFF)I
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
under a lightly loaded condition.
is defined by f = (P − P ) / (E
f
+ E
).
ON2
MAX2
MAX2
D
C
OFF
The allowable dissipation (P ) is defined by P = (T − T )
D
D
JM
C
5. Gate Voltage Rating − Never exceed the
/ R . The sum of device switching and conduction losses
qJC
gate−voltage rating of V . Exceeding the rated
GEM
must not exceed P . A 50% duty factor was used (Figure 3)
D
V
GE
can result in permanent damage to the oxide
and the conduction losses (P ) are approximated by
C
layer in the gate region.
P = (V x I ) / 2.
C
E
CE
CE
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
and E
are defined in the switching waveforms
ON2
OFF
shown in Figure 19. E
is the integral of the instantaneous
ON2
power loss (I x V ) during turn−on and E is the
CE
CE
OFF
integral of the instantaneous power loss (I x V ) during
CE
CE
turn−off. All tail losses are included in the calculation for
; i.e., the collector current equals zero (I = 0).
capacitor due to leakage currents or pickup.
E
OFF
CE
ORDERING INFORMATION
Part Number
HGTG27N120BN
Package
Brand
Shipping
TO−247
G27N120BN
450 Units / Tube
NOTE: When ordering, use the entire part number.
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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