HGTG30N60A4 [ONSEMI]
IGBT，600V，SMPS;
| 型号： | HGTG30N60A4 |
| 厂家： | 
ONSEMI |
| 描述： | IGBT，600V，SMPS 局域网 PC 栅 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总10页 (文件大小：391K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IGBT - SMPS
600 V, 60 A
HGTG30N60A4
Description
The HGTG30N60A4 combines the best features of high input
impedance of a MOSFET and the low on−state conduction loss
of a bipolar transistor. This IGBT is ideal for many high voltage
switching applications operating at high frequencies where low
conduction losses are essential. This device has been optimized
for fast switching applications.
www.onsemi.com
C
Features
• 60 A, 600 V @ T = 110°C
C
• Low Saturation Voltage: V
= 1.8 V @ I = 30 A
C
CE(sat)
G
• Typical Fall Time: 58 ns at T = 125°C
J
• Low Conduction Loss
E
• This is a Pb−Free Device
Applications
• UPS, Welder
E
C
G
TO−247−3LD
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
G30N60A4
$Y
= ON Semiconductor Logo
&Z
&3
&K
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G30N60A4
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
February, 2020 − Rev. 3
HGTG30N60A4/D
HGTG30N60A4
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Ratings
Unit
V
Collector to Emitter Voltage
BV
I
600
CES
C
Collector Current Continuous
TC = 25°C
TC = 110°C
75
A
60
A
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
240
A
CM
V
GES
GEM
20
30
V
V
V
Switching Safe Operating Area at T = 150°C, Figure 2
SSOA
150 A at 600V
463
J
Power Dissipation Total
TC = 25°C
TC > 25°C
P
D
W
W/°C
°C
Power Dissipation Derating
3.7
Operating and Storage Junction Temperature Range
T
T
−55 to +150
J, STG
Maximum Lead Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief 334
T
PKG
300
260
°C
°C
L
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
Package
Shipping
HGTG30N60A4
G30N60A4
TO−247−3LD
450 / Tube
ELECTRICAL SPECIFICATIONS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
= 250 ꢀ A, V = 0 V,
Min
600
20
−
Typ
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
Collector to Emitter Leakage Current
BV
BV
I
I
I
−
−
CES
ECS
C
GE
= −10 mA, V = 0 V
−
V
C
GE
V
= 600 V
T = 25°C
−
250
4.0
2.6
2.0
7.0
250
−
ꢀ A
mA
V
CES
CE
J
T = 125°C
−
−
J
Collector to Emitter Saturation Voltage
V
I
C
= 30 A, V = 15 V
T = 25°C
−
1.8
1.6
5.2
−
CE(SAT)
GE
J
T = 125°C
−
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
C
= 250 ꢀ A, V = 600 V
4.5
−
V
GE(TH)
CE
I
V
=
20 V
nA
A
GES
GE
SSOA
T = 150°C, R = 3 ꢁ ꢂ V = 15 V,
150
−
J
G
GE
L = 100 ꢀ H, V = 600 V
CE
Gate to Emitter Plateau Voltage
V
I
I
= 30 A, V = 300 V
−
−
−
−
−
−
−
−
−
8.5
225
300
25
−
270
360
−
V
GEP
C
C
CE
On−State Gate Charge
Q
= 30 A, V = 300 V
V
V
= 15 V
= 20 V
nC
nC
ns
ns
ns
ns
ꢀ J
ꢀ J
ꢀ J
G(ON)
CE
GE
GE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 30 A,
CE
t
12
−
rI
d(OFF)I
V
V
R
= 390 V,
= 15 V,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
150
38
−
= 3 ꢁ ꢂ ,
L = 200 ꢀ H,
Test Circuit − Figure 20
t
fI
−
Turn−On Energy (Note 2)
Turn−On Energy (Note 2)
Turn−Off Energy (Note 3)
E
E
E
280
600
240
−
ON1
ON2
OFF
−
350
www.onsemi.com
2
HGTG30N60A4
ELECTRICAL SPECIFICATIONS (T = 25°C unless otherwise noted) (continued)
C
Parameter
Current Turn−On Delay Time
Current Rise Time
Symbol
Test Conditions
Min
−
Typ
24
Max
−
Unit
ns
t
IGBT and Diode at T = 125°C,
d(ON)I
J
I
= 30 A,
CE
t
−
11
−
ns
rI
d(OFF)I
V
V
= 390 V,
= 15 V,
CE
GE
= 3 ꢁ ꢂ ,
Current Turn−Off Delay Time
Current Fall Time
t
−
180
58
200
70
ns
R
G
L = 200 ꢀ H,
Test Circuit − Figure 20
t
fI
−
ns
Turn−On Energy (Note 2)
Turn−On Energy (Note 2)
Turn−Off Energy (Note 3)
Thermal Resistance, Junction−Case
E
ON1
E
ON2
E
OFF
280
1000
450
−
−
ꢀ J
−
−
−
1160
750
0.27
ꢀ J
ꢀ J
R
°C/W
ꢃ
JC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
J
in Figure 20.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
www.onsemi.com
3
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
60
70
60
200
V
= 15 V
GE
T = 150°C, R = 3 ꢁ, V = 15 V, L = 500 ꢀ H
J
G
GE
150
100
50
50
40
30
20
10
0
0
400
500
600 700
0
100
200
300
150
25
50
75
100
125
V
CE
, Collector to Emitter Voltage (V)
T , Case Temperature (°C)
C
Figure 2. Minimum Switching Safe Operating
Area
Figure 1. DC Collector Current vs. Case
Temperature
500
300
18
16
14
12
10
8
900
T
/ 75°C
C
V
= 390 V, R = 3 ꢁ, T = 125°C
G J
V
GE
/ 15 V
CE
800
700
600
500
400
300
200
I
t
sc
f
f
= 0.05 / (t
+ t
ON2
)
MAX1
MAX2
C
d(OFF)I
d(ON)I
= (P − P ) / (E
+ E
)
D
C
OFF
100
P
= Conduction Dissipation
(Duty Factor = 50%)
R
= 0.27°C/W, See Notes
ꢃ
JC
sc
6
T = 125°C, R = 3 ꢁ, L = 200 ꢀ H, V = 390 V
J
G
CE
30
4
60
10
30
15
3
11
V
12
13
14
10
I
, Collector to Emitter Current (A)
CE
, Gate to Emitter Voltage (V)
GE
Figure 3. Operating Frequency vs. Collector
to Emitter Current
Figure 4. Short Circuit Withstand Time
50
50
40
30
20
10
0
Duty Cycle < 0.5%, V = 12 V
Duty Cycle < 0.5%, V = 15 V
GE
GE
Pulse Duration = 250 ꢀ s
Pulse Duration = 250 ꢀ s
40
30
20
10
0
T = 125°C
J
T = 125°C
J
T = 25°C
J
T = 150°C
J
T = 150°C
J
T = 25°C
J
2.0
2.5
1.0
1.5
2.0
2.5
0.5
V
1.0
1.5
0
0.5
V
0
, Collector to Emitter Voltage (V)
, Collector to Emitter Voltage (V)
CE
CE
Figure 5. Collector to Emitter On−State
Figure 6. Collector to Emitter On−State
Voltage
Voltage
www.onsemi.com
4
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (unless otherwise noted) (continued)
1400
3500
3000
2500
2000
1500
1000
500
R
= 3 ꢁ, L = 200 ꢀ H, V = 390 V
CE
R
= 3 ꢁ, L = 200 ꢀ H, V = 390 V
CE
G
G
1200
1000
800
600
400
200
0
T = 125°C, V = 12 V, V = 15 V
J
GE
GE
T = 125°C, V = 12 V or 15 V
J
GE
T = 25°C, V = 12 V or 15 V
J
GE
T = 25°C, V = 12 V, V = 15 V
J
GE
GE
0
60
40
, Collector to Emitter Current (A)
CE
50
30
10
20
0
10
20
30
40
50
60
0
I
I
, Collector to Emitter Current (A)
CE
Figure 8. Turn−Off Energy Loss vs. Collector
Figure 7. Turn−On Energy Loss vs. Collector
to Emitter Current
to Emitter Current
34
32
30
28
26
24
22
20
100
80
60
40
20
0
R
= 3 ꢁ, L = 200 ꢀ H, V = 390 V
CE
G
R
= 3 ꢁ, L = 200 ꢀ H, V = 390 V
CE
G
T = 25°C, T = 125°C, V = 12 V
J
J
GE
V
GE
= 12 V, T = 125°C, T = 25°C,
J J
T = 25°C, V = 15 V
J
GE
T = 25°C, T = 125°C, V = 15 V
J
J
GE
T = 125°C, V = 15 V
J
GE
0
10
20
30
40
50
60
60
0
10
20
30
40
50
I
, Collector to Emitter Current (A)
I
, Collector to Emitter Current (A)
CE
CE
Figure 9. Turn−On Delay Time vs. Collector
Figure 10. Turn−On Rise Time vs. Collector
to Emitter Current
to Emitter Current
220
200
180
160
140
120
70
60
50
R
= 3 ꢁ, L = 200 ꢀ H, V = 390 V
CE
R
= 3 ꢁ, L = 200 ꢀ H, V = 390 V
CE
G
G
V
= 12 V, V = 15 V, T = 125°C
GE J
GE
T = 125°C, V = 12 V or 15 V
J
GE
40
T = 25°C, V = 12 V or 15 V
J
GE
30
20
V
= 12 V, V = 15 V, T = 25°C
GE J
GE
0
10
20
30
40
50
60
10
20
30
40
50
60
0
I
, Collector to Emitter Current (A)
I
, Collector to Emitter Current (A)
CE
CE
Figure 12. Fall Time vs. Collector to Emitter
Current
Figure 11. Turn−Off Delay Time vs. Collector
to Emitter Current
www.onsemi.com
5
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted) (continued)
J
15.0
350
300
250
200
150
100
50
I
= 1 mA, R = 15 ꢁ, T = 25°C
Duty Cycle < 0.5%, V = 10 V
G(REF)
L
J
CE
Pulse Duration = 250 ꢀ s
12.5
10.0
7.5
5.0
2.5
0
T = 25°C
J
V
CE
= 600 V
V
CE
= 400 V
T = 125°C
J
V
CE
= 200 V
T = −55°C
J
0
12
8
9
10
11
6
7
0
100
150
200
250
50
V
GE
, Gate to Emitter Voltage (V)
Q , Gate Charge (nC)
G
Figure 13. Transfer Characteristic
Figure 14. Gate Charge Waveforms
5
4
3
2
1
0
20
16
12
8
R
E
= 3 ꢁ, L = 200 ꢀ H, V = 390 V, V = 15 V
T = 125°C, L = 200 ꢀ H, V = 390 V,
G
CE
GE
J
V
CE
= E
+ E
= 15 V
= E
TOTAL
ON2
OFF
GE
TOTAL
E
+ E
OFF
ON2
I
= 60 A
CE
I
I
= 30 A
= 15 A
CE
I
I
= 60 A
= 30 A
CE
4
CE
CE
I
= 15 A
CE
0
150
100
T , Case Temperature (°C)
125
300
25
50
75
3
10
100
R , Gate Resistance (ꢁ)
C
G
Figure 15. Total Switching Loss vs. Case
Temperature
Figure 16. Total Switching Loss vs. Gate
Resistance
10
8
2.3
2.2
2.1
2.0
1.9
1.8
1.7
Duty Cycle < 0.5%, V = 15 V
Frequency = 1 MHz
GE
Pulse Duration = 250 ꢀ s, T = 25°C
J
6
C
IES
I
= 60 A
CE
4
I
I
= 30 A
= 15 A
CE
C
2
OES
CE
C
RES
0
10
15
20
25
0
5
16
11
12
13
14
15
9
10
V
GE
, Gate to Emitter Voltage (V)
V
CE
, Collector to Emitter Voltage (V)
Figure 18. Collector to Emitter On−State
Figure 17. Capacitance vs. Collector to Emitter
Voltage
Voltage vs. Gate to Emitter Voltage
www.onsemi.com
6
HGTG30N60A4
TYPICAL PERFORMANCE CURVES (T = 25°C unless otherwise noted) (continued)
J
0
10
0.50
0.20
t
1
0.10
0.05
P
D
−1
10
t
2
Duty Factor, D = t /t
1
2
0.02
0.01
Peak T = (P x Z
x R ) + T
ꢃ
ꢃ
J
D
JC
JC
C
Single Pulse
−2
10
1
−2
−1
0
−5
−4
−3
10
10
10
10
10
10
10
t , Rectangular Pulse Duration (s)
1
Figure 19. IGBT Normalized Transient Thermal Response, Junction to Case
TEST CIRCUIT AND WAVEFORMS
HGTP30N60A4D
DIODE TA49373
90%
10%
V
GE
E
ON2
L = 200 ꢀ H
E
OFF
V
CE
R
= 3 ꢁ
G
90%
10%
+
V
DD
= 390 V
I
CE
−
t
rI
t
d(OFF)I
t
fI
t
d(ON)I
Figure 21. Switching Test Waveforms
Figure 20. Inductive Switching Test Circuit
www.onsemi.com
7
HGTG30N60A4
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications,
with virtually no damage problems due to electrostatic
discharge. IGBTs can be handled safely if the following
basic precautions are taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3)
of a typical device shows f
or f
; whichever is
MAX1
MAX2
smaller at each point. The information is based on
measurements of a typical device and is bounded by
the maximum rated junction temperature.
f
is defined by f
= 0.05/(t
+ t
).
MAX1
MAX1
d(OFF)I
d(ON)I
Deadtime (the denominator) has been arbitrarily held to
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26”
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
and t
are defined in
d(OFF)I
d(ON)I
Figure 21. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
or equivalent.
T
.
JM
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example,
f
is defined by f
= (P − P )/(E
+ E
).
ON2
MAX2
MAX2
D
C
OFF
The allowable dissipation (P ) is defined by
P = (T − T )/R . The sum of device switching
D
D
JM
C
ꢃ
J
C
with a metallic wristband.
and conduction losses must not exceed P . A 50% duty
D
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
factor was used (Figure 3) and the conduction losses (P )
C
are approximated by P = (V x I )/2.
C
CE
CE
E
and E
are defined in the switching waveforms
ON2
OFF
5. Gate Voltage Rating − Never exceed
shown in Figure 21. E
is the integral of the instantaneous
ON2
the gate−voltage rating of V . Exceeding
GEM
power loss (I
x V ) during turn−on and E
is
CE
CE
OFF
the rated V can result in permanent damage
the integral of the instantaneous power loss (I x V
)
CE
GE
CE
to the oxide layer in the gate region.
during turn−off. All tail losses are included in the calculation
for E ; i.e., the collector current equals zero (I = 0).
6. Gate Termination − The gates of these devices
are essentially capacitors. Circuits that leave
the gate open−circuited or floating should be
avoided. These conditions can result in turn−on
of the device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
7. Gate Protection − These devices do not have
an internal monolithic Zener diode from gate
to emitter. If gate protection is required an external
Zener is recommended.
OFF
CE
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
HGTG30N60A4D_NL
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
HGTG30N60B3D_NL
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247, TO-247, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明