HGTG30N60B3D [ONSEMI]
600V，PT IGBT;
| 型号： | HGTG30N60B3D |
| 厂家： | 
ONSEMI |
| 描述： | 600V，PT IGBT 局域网 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总9页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UFS Series N-Channel IGBT
with Anti-Parallel Hyperfast
Diode
60 A, 600 V
HGTG30N60B3D
www.onsemi.com
The HGTG30N60B3D is a MOS gated high voltage switching
device combining the best features of MOSFETs and bipolar
transistors. This device has the high input impedance of a MOSFET
and the low on−state conduction loss of a bipolar transistor. The much
lower on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49170. The diode
used in anti−parallel with the IGBT is the development type TA49053.
The IGBT is ideal for many high voltage switching applications
operating at moderate frequencies where low conduction losses are
essential, such as: AC and DC motor controls, power supplies and
drivers for solenoids, relays and contactors.
C
G
E
E
C
G
Formerly Developmental Type TA49172.
Features
• 60 A, 600 V, T = 25°C
C
TO−247−3LD SHORT LEAD
CASE 340CK
• 600 V Switching SOA Capability
JEDEC STYLE
• Typical Fall Time 90 ns at T = 150°C
• Short Circuit Rating
• Low Conduction Loss
• Hyperfast Anti−Parallel Diode
• This is a Pb−Free Device
J
MARKING DIAGRAM
$Y&Z&3&K
G30N60B3D
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
G30N60B3D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
© Semiconductor Components Industries, LLC, 2004
1
Publication Order Number:
April, 2020 − Rev. 2
HGTG30N60B3D/D
HGTG30N60B3D
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
HGTG30N60B3D
Unit
Collector to Emitter Voltage
BV
600
V
CES
Collector Current Continuous
I
60
30
A
A
At T = 25°C
C25
C
I
At T = 110°C
C110
C
Average Diode Forward Current at 110°C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
25
A
A
V
V
EC(AVG)
I
220
CM
V
20
GES
GEM
V
30
Switching Safe Operating Area at T = 150°C, (Figure 2)
SSOA
60 A at 600 V
J
Power Dissipation Total at T = 25°C
P
208
1.67
W
W/°C
°C
C
D
Power Dissipation Derating T > 25°C
C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
T , T
−55 to 150
260
J
STG
T
°C
L
Short Circuit Withstand Time (Note 2) at V = 12 V
t
4
ms
GE
SC
SC
Short Circuit Withstand Time (Note 2) at V = 10 V
t
10
ms
GE
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
2. V
= 360 V, T =125°C, R = 3 W.
CE(PK)
J G
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
C
Parameter
Symbol
Test Condition
I = 250 mA, V = 0 V
C
Min
600
−
Typ
−
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
CES
GE
V
CE
= BV
T = 25°C
J
−
250
3
mA
mA
V
CES
CES
T = 150°C
J
−
−
Collector to Emitter Saturation Voltage
V
I
= I
, V = 15 V
T = 25°C
−
1.45
1.7
5
1.9
2.1
6
CE(SAT)
C
C
C110
GE
J
T = 150°C
J
−
V
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
= 250 mA, V = V
GE
4.2
−
V
GE(TH)
CE
I
V
GE
=
20 V
−
250
−
nA
A
GES
SSOA
T = 150°C, R = 3 W,
GE
V
V
= 480 V
200
60
−
−
J
G
CE(PK)
V
= 15 V, L = 100 mH,
= 600 V
−
−
A
CE(PK)
Gate to Emitter Plateau Voltage
V
GEP
I
I
= I
, V = 0.5 BV
7.2
170
230
36
−
V
C
C110
CE
CES
On−State Gate Charge
Q
= I
C110
,
V
= 15 V
−
190
250
−
nC
nC
ns
ns
ns
ns
mJ
mJ
ns
ns
ns
ns
mJ
mJ
V
G(ON)
C
V
GE
= 0.5 BV
CE
CES
V
= 20 V
−
GE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
−
d(ON)I
J
I
= I
,
CE
C110
t
rI
−
25
−
V
V
= 0.8 BV
,
CES
CE
GE
= 15 V,
Current Turn−Off Delay Time
Current Fall Time
t
−
137
58
−
d(OFF)I
R
= 3 W,
G
t
fI
−
−
L = 1 mH,
Test Circuit (Figure 19)
Turn−On Energy
E
ON
−
550
680
32
800
900
−
Turn−Off Energy (Note 3)
Current Turn−On Delay Time
Current Rise Time
E
OFF
−
t
IGBT and Diode at T = 150°C,
−
d(ON)I
J
I
= I
,
CE
C110
t
rI
−
24
−
V
V
= 0.8 BV
,
CES
CE
GE
= 15 V,
Current Turn−Off Delay Time
Current Fall Time
t
−
275
90
320
150
1550
1900
2.5
d(OFF)I
R
= 3 W,
G
t
fI
−
L = 1 mH,
Test Circuit (Figure 19)
Turn−On Energy
E
ON
−
1300
1600
1.95
Turn−Off Energy (Note 3)
Diode Forward Voltage
E
OFF
−
V
EC
I
= 30 A
−
EC
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2
HGTG30N60B3D
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
C
Parameter
Symbol
Test Condition
Min
−
Typ
32
45
−
Max
40
Unit
ns
Diode Reverse Recovery Time
t
rr
I
I
= 1 A, dI /dt = 200 A/ms
EC
EC
= 30 A, dI /dt = 200 A/ms
−
55
ns
EC
EC
Thermal Resistance Junction To Case
R
IGBT
−
0.6
1.3
°C/W
°C/W
q
JC
Diode
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
225
200
175
150
125
100
75
60
50
40
30
20
10
0
T
J
= 150°C, R = 3 W, V = 15 V, L = 100 mH
G GE
V
= 15 V
GE
50
25
0
0
100
200
300
400
500
600
700
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
20
18
500
450
TJ = 150°C, RG = 3 W,
L = 1 mH, VCE = 480 V
V
CE
= 360 V, R = 3 W, T = 125°C
G J
100
10
1
16
14
12
10
400
350
300
250
ISC
f
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
d(ON)I
+ E
f
= (P − P ) / (E
)
MAX2
D
C
ON2
OFF
P
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.6°C/W, SEE NOTES
C
R
T
C
V
GE
q
JC
75°C 15 V
75°C 10 V
110°C 15 V
110°C 10 V
tSC
8
6
200
150
0.1
10
11
12
13
14
15
5
10
20
40
60
I
, COLLECTOR TO EMITTER CURRENT (A)
V
GE
, GATE TO EMITTER VOLTAGE (V)
CE
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
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3
HGTG30N60B3D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
225
200
175
150
125
100
75
350
DUTY CYCLE < 0.5%, V = 15 V
GE
PULSE DURATION = 250 ms
300
250
200
150
100
50
T
C
= −55°C
T
= 150°C
C
T
C
= −55°C
T
C
= 25°C
T
= 150°C
C
T
C
= 25°C
50
DUTY CYCLE < 0.5%, V = 10 V
GE
PULSE DURATION = 250 ms
25
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. COLLECTOR TO EMITTER ON−STATE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
4.5
6
R
G
= 3 W, L = 1 mH, V = 480 V
R = 3 W, L = 1 mH, V = 480 V
G CE
CE
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
5
4
3
2
1
0
T
J
= 25°C,T = 150°C, V = 10 V
J GE
T
J
= 150°C, V = 10 V or 15 V
GE
T
J
= 25°C,T = 150°C, V = 15 V
J GE
T
J
= 25°C, V = 10 V or 15 V
GE
10
20
30
40
50
60
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. TURN−ON ENERGY LOSS vs.
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
55
50
45
40
35
30
25
250
R
G
= 3 W, L = 1 mH, V = 480 V
CE
R
= 3 W, L = 1 mH, V = 480 V
CE
G
T
J
= 25°C, T = 150°C, V = 10 V
J GE
200
150
100
T
J
= 25°C, T = 150°C, V = 15 V
J GE
T
J
= 25°C, T = 150°C, V = 10 V
J GE
50
0
T
J
= 25°C, T = 150°C, V = 15 V
J GE
10
20
30
40
50
60
10
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
TO EMITTER CURRENT
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4
HGTG30N60B3D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
300
250
200
150
100
120
R
= 3 W, L = 1 mH, V = 480 V
CE
G
T
J
= 150°C, V = 10 V and 15 V
GE
100
80
T
= 150°C, V = 10 V, V = 15 V
GE GE
J
T
J
= 25°C, V = 10 V, V = 15 V
GE GE
60
T
J
= 25°C, V = 10 V and 15 V
GE
R
G
= 3 W, L =1 mH,
V
= 480 V
CE
40
10
10
20
30
40
50
60
20
30
40
50
60
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. FALL TIME vs. COLLECTOR TO
EMITTER CURRENT
16
14
12
10
8
300
250
200
150
100
50
DUTY CYCLE < 0.5%, V = 10 V
CE
PULSE DURATION = 250 ms
I
= 1 mA, R = 10 W, T = 25°C
L C
g(REF)
T
C
= −55°C
V
= 600 V
CE
T
6
= 25°C
T
C
= 150°C
C
6
V
CE
= 200 V
150
4
V
CE
= 400 V
100
2
0
0
4
5
7
8
9
10
11
0
50
200
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 13. TRANSFER CHARACTERISTIC
Figure 14. GATE CHARGE WAVEFORMS
10
FREQUENCY = 1 MHz
C
8
6
4
2
0
IES
COES
CRES
0
5
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 15. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
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5
HGTG30N60B3D
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
100
10−1
10−2
0.50
0.20
0.10
0.05
t
1
P
D
0.02
0.01
t
2
DUTY FACTOR, D = t / t
1
2
PEAK T = (P x Z
x R ) + T
qJC
C
qJC
J
D
SINGLE PULSE
10−4
10−5
10−3
10−2
10−1
100
101
t , RECTANGULAR PULSE DURATION (s)
1
Figure 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
50
200
175
150
125
100
75
T
C
= 25°C, dI /dt = 200 A/ms
EC
40
30
20
10
0
t
rr
25°C
t
a
b
100°C
t
50
−55°C
25
0
0
2
5
10
20
30
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
EC
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
Figure 17. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 18. RECOVERY TIMES vs.
FORWARD CURRENT
TEST CIRCUIT AND WAVEFORMS
HGTG30N60B3D
90%
OFF
10%
ON2
V
GE
E
E
L = 1 mH
V
CE
R
G
= 3 W
90%
10%
d(OFF)I
+
I
CE
t
V
DD
= 480 V
t
rI
t
fI
−
t
d(ON)I
Figure 19. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 20. SWITCHING TEST WAVEFORMS
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6
HGTG30N60B3D
HANDLING PRECAUTIONS FOR IGBTs
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7,
8, 9 and 11. The operating frequency plot (Figure 3) of a
typical device shows f
or f
; whichever is smaller
MAX1
MAX2
at each point. The information is based on measurements of
a typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
f
is defined by f
= 0.05 / (t
+ t
).
MAX1
MAX1
d(OFF)I d(ON)I
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
and t
are defined in
d(OFF)I
d(ON)I
Figure 20. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
metallic wristband.
T
. t
is important when controlling output ripple
JM d(OFF)I
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
under a lightly loaded condition.
is defined by f = (P − P ) / (E
f
+ E ).
ON
MAX2
MAX2
D
C
OFF
The allowable dissipation (P ) is defined by P = (T
T )
D
D
JM −
C
5. Gate Voltage Rating − Never exceed the
/ R . The sum of device switching and conduction losses
qJC
gate−voltage rating of V . Exceeding the rated
GEM
must not exceed P . A 50% duty factor was used (Figure 3)
D
V
GE
can result in permanent damage to the oxide
and the conduction losses (P ) are approximated by
C
layer in the gate region.
P = (V x I ) / 2.
C
E
CE
CE
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open−circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
capacitor due to leakage currents or pickup.
and E
are defined in the switching waveforms
ON
OFF
shown in Figure 20. E is the integral of the instantaneous
ON
power loss (I x V ) during turn−on and E is the
CE
CE
OFF
integral of the instantaneous power loss (I x V ) during
CE
CE
turn−off. All tail losses are included in the calculation for
E
; i.e., the collector current equals zero (I = 0).
OFF
CE
ORDERING INFORMATION
†
Part Number
HGTG30N60B3D
Package
Brand
Shipping
TO−247
G30N60B3D
450 Units / Tube
NOTE: When ordering, use the entire part number.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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