HGTP12N60A4D [ONSEMI]
600V，SMPS IGBT;
| 型号： | HGTP12N60A4D |
| 厂家： | 
ONSEMI |
| 描述： | 600V，SMPS IGBT 局域网 瞄准线 双极性晶体管 功率控制 |
| 文件： | 总12页 (文件大小：583K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMPS Series N-Channel
IGBT with Anti-Parallel
Hyperfast Diode
600 V
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
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C
The
HGTG12N60A4D,
HGTP12N60A4D
and
HGT1S12N60A4DS are MOS gated high voltage switching devices
combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the
low on−state conduction loss of a bipolar transistor. The much lower
on−state voltage drop varies only moderately between 25°C and
150°C. The IGBT used is the development type TA49335. The diode
used in anti−parallel is the development type TA49371.
This IGBT is ideal for many high voltage switching applications
operating at high frequencies where low conduction losses are
essential. This device has been optimized for high frequency switch
mode power supplies.
G
E
COLLECTOR
(FLANGE)
TO−220−3LD
CASE 340AT
JEDEC ALTERNATE
VERSION
G
C
E
Formerly Developmental Type TA49337.
COLLECTOR
2
(FLANGE)
D PAK−3
Features
(TO−263, 3−LEAD)
CASE 418AJ
JEDEC STYLE
• >100 kHz Operation 390 V, 12 A
• 200 kHz Operation 390 V, 9A
• 600 V Switching SOA Capability
G
E
E
C
G
• Typical Fall Time 70 ns at T = 125°C
J
TO−247−3LD
SHORT LEAD
CASE 340CK
JEDEC STYLE
• Low Conduction Loss
• Temperature Compensating Saber™ Model
COLLECTOR
(FLANGE)
• Related Literature
♦ TB334 “Guidelines for Soldering Surface Mount Components to
PC Boards”
MARKING DIAGRAM
• These are Pb−Free Devices
$Y&Z&3&K
12N60A4D
$Y&Z&3&K
12N60A4D
$Y&Z&3&K
12N60A4D
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
12N60A4D = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 8 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
April, 2020 − Rev. 3
HGT1S12N60A4DS/D
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise specified)
C
HGTG12N60A4D,
HGTP12N60A4D,
HGT1S12N60A4DS
Parameter
Symbol
Unit
Collector to Emitter Voltage
Collector Current Continuous
BV
600
V
CES
I
54
23
A
A
At T = 25°C
C25
C
I
At T = 110°C
C110
C
Collector Current Pulsed (Note 1)
Gate to Emitter Voltage Continuous
Gate to Emitter Voltage Pulsed
I
96
20
A
V
V
CM
V
GES
GEM
V
30
Switching Safe Operating Area at T = 150°C, Figure 2
SSOA
60 A at 600 V
167
J
Power Dissipation Total at T = 25°C
P
D
W
W/°C
°C
C
Power Dissipation Derating T > 25°C
1.33
C
Operating and Storage Junction Temperature Range
T , T
−55 to 150
J
STG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, see Tech Brief 334.
T
pkg
300
260
°C
°C
L
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)
J
Parameter
Symbol
Test Condition
I = 250 mA, V = 0 V
C
Min
600
−
Typ
−
Max
−
Unit
V
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BV
I
CES
GE
V
CE
= 600 V
T = 25°C
−
250
2.0
2.7
2.0
−
mA
mA
V
CES
J
T = 125°C
−
−
J
Collector to Emitter Saturation Voltage
V
I
C
= 12 A, V = 15 V
T = 25°C
−
2.0
1.6
5.6
−
CE(SAT)
GE
J
T = 125°C
−
V
J
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
V
I
C
= 250 mA, V = 600 V
−
V
GE(TH)
CE
I
V
GE
=
20 V
−
250
−
nA
A
GES
SSOA
T = 150°C, R = 10 W, V = 15 V,
60
−
J
G
CE
GE
L = 100 mH, V = 600 V
Gate to Emitter Plateau Voltage
V
I
I
= 12 A, V = 300 V
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
8
78
97
17
8
−
96
120
−
V
GEP
C
C
CE
On−State Gate Charge
Q
= 12 A, V = 300 V
V
= 15 V
= 20 V
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
ns
ns
ns
ns
mJ
mJ
mJ
g(ON)
CE
GE
V
GE
Current Turn−On Delay Time
Current Rise Time
t
IGBT and Diode at T = 25°C,
J
d(ON)I
I
= 12 A,
CE
t
rI
−
V
V
R
= 390 V,
= 15 V,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
96
18
55
160
50
17
16
110
70
55
250
175
−
d(OFF)I
= 10 W,
t
fI
−
L = 500 mH,
Test Circuit (Figure 24)
Turn−On Energy (Note 3)
Turn−On Energy (Note 3)
Turn−Off Energy (Note 2)
Current Turn−On Delay Time
Current Rise Time
E
E
E
−
ON1
ON2
OFF
−
−
t
IGBT and Diode at T = 125°C,
−
d(ON)I
J
I
= 12 A,
CE
t
rI
−
V
V
R
= 390 V,
= 15 V,
CE
GE
G
Current Turn−Off Delay Time
Current Fall Time
t
170
95
−
d(OFF)I
= 10 W,
t
fI
L = 500 mH,
Test Circuit (Figure 24)
Turn−On Energy (Note 3)
Turn−On Energy (Note 3)
Turn−Off Energy (Note 2)
E
E
E
ON1
ON2
OFF
350
285
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2
HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified) (continued)
J
Parameter
Diode Forward Voltage
Symbol
Test Condition
Min
−
Typ
2.2
30
18
−
Max
−
Unit
V
V
EC
I
I
I
= 12 A
EC
EC
EC
Diode Reverse Recovery Time
t
rr
−
−
ns
= 12 A, dI /dt = 200 A/ms
EC
= 1 A, dI /dt = 200 A/ms
−
−
ns
EC
Thermal Resistance Junction To Case
R
IGBT
−
0.75
2.0
°C/W
°C/W
q
JC
Diode
−
−
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Turn−Off Energy Loss (E
) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and
OFF
ending at the point where the collector current equals zero (I = 0 A). All devices were tested per JEDEC Standard No. 24−1 Method for
CE
Measurement of Power Device Turn−Off Switching Loss. This test method produces the true total Turn−Off Energy Loss.
3. Values for two Turn−On loss conditions are shown for the convenience of the circuit designer. E
is the turn−on loss of the IGBT only. E
ON1
ON2
is the turn−on loss when a typical diode is used in the test circuit and the diode is at the same T as the IGBT. The diode type is specified
J
in Figure 24.
TYPICAL PERFORMANCE CURVES (unless otherwise specified)
70
60
50
40
30
20
10
0
60
50
40
30
20
10
0
V
= 15 V
T
= 150°C, R = 10 W, V = 15 V, L = 200 mH
G GE
GE
J
0
100
200
300
400
500
600
700
25
50
75
100
125
150
T , CASE TEMPERATURE (°C)
C
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 1. DC COLLECTOR CURRENT vs.
CASE TEMPERATURE
Figure 2. MINIMUM SWITCHING SAFE
OPERATING AREA
500
300
20
18
16
14
12
10
8
300
275
250
225
200
175
150
125
100
75
T
V
V
= 390 V, R = 10 W, T = 125°C
C
GE
CE G J
75°C 15 V
ISC
100
f
f
P
= 0.05 / (t
+ t
)
MAX1
d(OFF)I
d(ON)I
+ E
= (P − P ) / (E
)
MAX2
D
C
ON2
OFF
= CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
= 0.75°C/W, SEE NOTES
C
6
t SC
R
ØJC
4
2
TJ = 125°C, RG = 10 W, L = 500 mH, VCE = 390 V
10
10
0
50
9
10
V , GATE TO EMITTER VOLTAGE (V)
GE
11
12
13
14
15
1
3
20
30
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
Figure 3. OPERATING FREQUENCY vs.
COLLECTOR TO EMITTER CURRENT
Figure 4. SHORT CIRCUIT WITHSTAND TIME
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
24
20
16
12
8
24
DUTY CYCLE < 0.5%, V = 12 V
PULSE DURATION = 250 ms
GE
DUTY CYCLE < 0.5%, V = 15 V
GE
PULSE DURATION = 250 ms
20
16
12
8
T
J
= 150°C
T
J
= 150°C
T
J
= 125°C
T
J
= 125°C
4
4
T
J
= 25°C
T = 25°C
J
0
0
0
0.5
1
1.5
2
2.5
0
0.5
1
1.5
2
2.5
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. COLLECTOR TO EMITTER ON−STATE
Figure 6. COLLECTOR TO EMITTER ON−STATE
VOLTAGE
VOLTAGE
700
400
R
G
= 10 W, L = 500 mH, V = 390 V
R
G
= 10 W, L = 500 mH, V = 390 V
CE
CE
350
300
250
200
150
100
50
600
500
400
300
200
100
0
T
= 125°C, V = 12 V, V = 15 V
J
GE
GE
T
= 125°C, V = 12 V or 15 V
J
GE
T
J
= 25°C, V = 12 V, V = 15 V
GE
GE
T
J
= 25°C, V = 12 V or 15 V
GE
0
2
4
6
8
10 12 14 16 18 20 22 24
2
4
6
8
10 12 14 16 18 20 22 24
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 7. TURN−ON ENERGY LOSS vs.
Figure 8. TURN−OFF ENERGY LOSS vs.
COLLECTOR TO EMITTER CURRENT
COLLECTOR TO EMITTER CURRENT
18
17
16
15
14
13
12
11
10
32
28
24
20
16
12
8
R
= 10 W, L = 500 mH
= 390 V
R
= 10 W, L = 500 mH, V = 390 V
CE
G
G
V
CE
T
J
= 125°C or T = 25°C, V = 12 V
J GE
T
J
= 25°C or T = 125°C, V = 12 V
J GE
T
J
= 25°C or T = 125°C, V = 15 V
J GE
T
J
= 25°C or T = 125°C, V = 15 V
4
J
GE
0
2
4
6
8
10 12 14 16 18 20 22 24
2
4
6
8
10 12 14 16 18 20 22 24
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 9. TURN−ON DELAY TIME vs. COLLECTOR
Figure 10. TURN−ON RISE TIME vs. COLLECTOR
TO EMITTER CURRENT
TO EMITTER CURRENT
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
115
110
105
100
95
90
R
= 10 W, L = 500 mH, V = 390 V
CE
G
R
= 10 W, L = 500 mH, V = 390 V
CE
G
80
70
60
50
40
30
20
10
V
GE
= 12 V, V = 15 V, T = 125°C
GE J
T
J
= 125°C, V = 12 V or 15 V
GE
V
GE
= 12 V, V = 15 V, T = 25°C
GE J
T
J
= 25°C, V = 12 V or 15 V
GE
90
85
4
6
8
10 12 14 16 18 20 22 24
2
4
6
8
10 12 14 16 18 20 22 24
2
I
, COLLECTOR TO EMITTER CURRENT (A)
I
, COLLECTOR TO EMITTER CURRENT (A)
CE
CE
Figure 11. TURN−OFF DELAY TIME vs.
COLLECTOR TO EMITTER CURRENT
Figure 12. FALL TIME vs COLLECTOR TO
EMITTER CURRENT
250
200
150
100
50
16
14
12
10
8
I
= 1 mA, R = 25 W, T = 25°C
DUTY CYCLE < 0.5%, V = 10 V
CE
PULSE DURATION = 250 ms
G(REF)
L
C
T
J
= 25°C
V
CE
= 600 V
V
CE
= 400 V
T = −55°C
J
6
T
= 125°C
V
CE
= 200 V
J
4
2
0
0
6
7
8
9
10 11
12 13
14
15 16
0
10
20
30
40
50
60
70
80
V
GE
, GATE TO EMITTER VOLTAGE (V)
Q , GATE CHARGE (nC)
G
Figure 13. TRANSFER CHARACTERISTIC
Figure 14. GATE CHARGE WAVEFORMS
10
1.2
1.0
0.8
0.6
0.4
0.2
0
R
= 10 W, L = 500 mH, V = 390 V, V = 15 V
T = 125°C L = 500 mH,
J
G
CE
GE
E
TOTAL
= E
+ E
V = 390 V, V = 15 V
CE GE
ON2
OFF
E
TOTAL
= E
+ E
OFF
ON2
I
I
= 24 A
= 12 A
CE
I
I
= 24 A
= 12 A
CE
1
CE
CE
I
= 6 A
CE
I
= 6 A
125
CE
0.1
5
10
100
1000
25
50
75
100
150
T , CASE TEMPERATURE (°C)
C
R , GATE RESISTANCE (W)
G
Figure 15. TOTAL SWITCHING LOSS vs.
CASE TEMPERATURE
Figure 16. TOTAL SWITCHING LOSS vs.
GATE RESISTANCE
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
2.4
3.0
2.5
2.0
1.5
1.0
0.5
0
DUTY CYCLE < 0.5%, V = 15 V
GE
FREQUENCY 1 MHz
PULSE DURATION = 250 ms, T = 25°C
J
2.3
2.2
2.1
2.0
1.9
C
IES
I
I
= 18 A
= 12 A
CE
C
CE
OES
I
= 6 A
CE
C
RES
5
8
9
10
11
12
13
14
15
16
0
10
15
20
25
V
CE
, COLLECTOR TO EMITTER VOLTAGE (V)
V
GE
, GATE TO EMITTER VOLTAGE (V)
Figure 17. CAPACITANCE vs. COLLECTOR TO
EMITTER VOLTAGE
Figure 18. COLLECTOR TO EMITTER ON−STATE
VOLTAGE vs. GATE TO EMITTER VOLTAGE
90
14
DUTY CYCLE < 0.5%
dI /dt = 200 A/ms
EC
80
70
60
50
40
30
PULSE DURATION = 250 ms
12
125°C t
rr
10
8
125°C t
b
125°C
25°C
6
4
2
0
125°C t
a
25°C t
rr
20
25°C t
b
a
10
0
25°C t
1
2
3
4
5
6
7
8
9
10 11 12
0
0.5
V
1.0
1.5
2.0
2.5
, FORWARD VOLTAGE (V)
I
, FORWARD CURRENT (A)
EC
EC
Figure 19. DIODE FORWARD CURRENT vs.
FORWARD VOLTAGE DROP
Figure 20. RECOVERYTIMES vs.
FORWARD CURRENT
65
60
55
50
45
40
35
30
25
20
15
10
5
400
350
125°C I = 12 A
I
/dt = 12 A, V = 390 V
V
CE
= 390 V
CE
EC
CE
125°C t
b
300
250
200
150
100
50
125°C I = 6 A
CE
125°C t
a
25°C I = 12 A
CE
25°C t
25°C t
a
25°C I = 6 A
CE
b
0
200
300
400
500
600
700
800
900 1000
200
300
400
500
600
700
800
900 1000
di /dt, RATE OF CHANGE OF CURRENT (A/ms)
EC
di /dt, RATE OF CHANGE OF CURRENT (A/ms)
EC
Figure 21. RECOVERY TIMES vs. RATE OF
CHANGE OF CURRENT
Figure 22. STORED CHARGE vs. RATE OF
CHANGE OF CURRENT
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
TYPICAL PERFORMANCE CURVES (unless otherwise specified) (continued)
0
10
0.50
0.20
0.10
0.05
t
1
−1
10
10
P
D
t
2
0.02
0.01
DUTY FACTOR, D = t / t
1
2
PEAK T = (P x Z
x R ) + T
q
q
J
D
JC
JC
C
SINGLE PULSE
−2
10
−5
−4
−3
10
−2
10
−1
0
1
10
10
10
10
t , RECTANGULAR PULSE DURATION (s)
1
Figure 23. IGBT NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
TEST CIRCUIT AND WAVEFORMS
HGTP12N60A4D
DIODE TA49371
90%
10%
ON2
V
GE
E
E
OFF
L = 500 mH
V
CE
R
G
= 10 W
90%
DUT
10%
d(OFF)I
+
I
CE
t
V
DD
= 390 V
t
rI
t
fI
−
t
d(ON)I
Figure 24. INDUCTIVE SWITCHING TEST CIRCUIT
Figure 25. SWITCHING TEST WAVEFORMS
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HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS
HANDLING PRECAUTIONS FOR IGBTS
7. Gate Protection − These devices do not have an
internal monolithic Zener diode from gate to
emitter. If gate protection is required an external
Zener is recommended.
Insulated Gate Bipolar Transistors are susceptible to
gate−insulation damage by the electrostatic discharge of
energy through the devices. When handling these devices,
care should be exercised to assure that the static charge built
in the handler’s body capacitance is not discharged through
the device. With proper handling and application
procedures, however, IGBTs are currently being extensively
used in production by numerous equipment manufacturers
in military, industrial and consumer applications, with
virtually no damage problems due to electrostatic discharge.
IGBTs can be handled safely if the following basic
precautions are taken:
OPERATING FREQUENCY INFORMATION
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (I ) plots are possible using
CE
the information shown for a typical unit in Figures 5, 6, 7, 8,
9 and 11. The operating frequency plot (Figure 3) of a typical
device shows f
or f
; whichever is smaller at each
MAX1
MAX2
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be
kept shorted together either by the use of metal
shorting springs or by the insertion into conductive
material such as “ECCOSORBDt LD26” or
equivalent.
2. When devices are removed by hand from their
carriers, the hand being used should be grounded
by any suitable means − for example, with a
metallic wristband.
f
is defined by f
= 0.05 / (t
+ t
).
MAX1
MAX1
d(OFF)I
d(ON)I
Deadtime (the denominator) has been arbitrarily held to
10% of the on−state time for a 50% duty factor. Other
definitions are possible. t
and t
are defined in
d(OFF)I
d(ON)I
Figure 25. Device turn−off delay can establish an additional
frequency limiting condition for an application other than
T
. t
is important when controlling output ripple
JM d(OFF)I
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed
from circuits with power on.
under a lightly loaded condition.
is defined by f = (P − P ) / (E
f
+ E
).
C
MAX2
MAX2
D
C
OFF
ON2
The allowable dissipation (P ) is defined by P = (T − T )
D
D
JM
5. Gate Voltage Rating − Never exceed the
/ R . The sum of device switching and conduction losses
qJC
gate−voltage rating of V . Exceeding the rated
GEM
must not exceed P . A 50% duty factor was used (Figure 3)
D
V
GE
can result in permanent damage to the oxide
and the conduction losses (P ) are approximated by
C
layer in the gate region.
P = (V x I ) / 2.
C
E
CE
CE
6. Gate Termination − The gates of these devices are
essentially capacitors. Circuits that leave the gate
open− circuited or floating should be avoided.
These conditions can result in turn−on of the
device due to voltage buildup on the input
and E
are defined in the switching waveforms
ON2
OFF
shown in Figure 25. E
is the integral of the instantaneous
ON2
power loss (I x V ) during turn−on and E is the
CE
CE
OFF
integral of the instantaneous power loss (I x V ) during
CE
CE
turn−off. All tail losses are included in the calculation for
capacitor due to leakage currents or pickup.
E
; i.e., the collector current equals zero (I = 0).
OFF
CE
ORDERING INFORMATION
†
Part Number
HGTG12N60A4D
Package
TO−247
Brand
Shipping
12N60A4D
12N60A4D
12N60A4D
450 Units / Tube
800 Units / Tube
800 Units / Tube
HGTP12N60A4D
TO−220AB
TO−263AB
HGT1S12N60A4DS
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO−263AB variant in tape and reel, e.g.
HGT1S12N60A4DS9A.
Saber is a registered trademark of Sabremark Limited Partnership.
All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders.
www.onsemi.com
8
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−3LD
CASE 340AT
ISSUE A
DATE 03 OCT 2017
Scale 1:1
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13818G
TO−220−3LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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