HUFA75639S3ST [ONSEMI]
100 V、56 A、21 mΩ、D2PAKN 沟道 UltraFET®;
| 型号： | HUFA75639S3ST |
| 厂家： | 
ONSEMI |
| 描述： | 100 V、56 A、21 mΩ、D2PAKN 沟道 UltraFET® 开关 晶体管 |
| 文件： | 总8页 (文件大小：702K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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www.onsemi.com
onsemi andꢀꢀꢀꢀꢀꢀꢀand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdonsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
HUFA75639S3ST-F085A
56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs
Features
• 56A, 100V
These N-Channel power MOSFETs
are manufactured using the
innovative UltraFET® process. This
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
advanced process technology
achieves the lowest possible on-resistance per silicon area,
resulting in outstanding performance. This device is capable
of withstanding high energy in the avalanche mode and the
diode exhibits very low reverse recovery time and stored
charge. It was designed for use in applications where power
efficiency is important, such as switching regulators,
switching converters, motor drivers, relay drivers, low-
voltage bus switches, and power management in portable
and battery-operated products.
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
Ordering Information
PART NUMBER
PACKAGE
BRAND
G
TO263AB
HUFA75639S3ST-F085A
75639S
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-263AB variant in tape and reel, e.g., HUFA75639S3ST.
S
Packaging
DRAIN
(FLANGE)
GATE
SOURCE
JEDEC TO-263AB
Publication Order Number:
HUFA75639S3ST-F085A/D
©2012 Semiconductor Components Industries, LLC.
August-2017, Rev. 3
HUFA75639S3ST-F085A
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
UNITS
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
100
100
±20
V
V
V
DSS
DGR
Drain to Gate Voltage (R
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Drain Current
Continuous (Figure 2). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
56
Figure 4
Figures 6, 14, 15
200
A
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
W
D
o
o
Derate Above 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1.35
W/ C
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
-55 to 175
C
J
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to 150 C.
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
I
= 250µA, V
= 0V (Figure 11)
100
-
-
-
-
-
V
DSS
D
GS
GS
GS
I
V
V
V
= 95V, V
= 90V, V
= ±20V
= 0V
= 0V, T = 150 C
-
-
-
1
µA
µA
nA
DSS
DS
DS
GS
o
250
±100
C
Gate to Source Leakage Current
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
Drain to Source On Resistance
THERMAL SPECIFICATIONS
I
GSS
V
V
= V , I = 250µA (Figure 10)
2
-
-
4
V
GS(TH)
GS
DS
D
r
I
= 56A, V
= 10V (Figure 9)
0.021
0.025
Ω
DS(ON)
D
GS
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
(Figure 3)
TO-247
-
-
-
-
-
-
0.74
30
C/W
θJC
o
C/W
θJA
o
TO-220, TO-263
62
C/W
SWITCHING SPECIFICATIONS (V
Turn-On Time
= 10V)
GS
t
V
R
R
= 50V, I
D
56A,
= 10V,
-
-
-
-
-
-
-
110
ns
ns
ns
ns
ns
ns
ON
DD
= 0.89Ω, V
L
GS
Turn-On Delay Time
Rise Time
t
15
60
20
25
-
-
-
d(ON)
= 5.1Ω
GS
t
r
Turn-Off Delay Time
Fall Time
t
-
d(OFF)
t
-
f
Turn-Off Time
t
70
OFF
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
V
V
V
= 0V to 20V
= 0V to 10V
= 0V to 2V
V
DD
= 50V,
56A,
-
-
-
-
-
110
57
130
75
4.5
-
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
I
D
Gate Charge at 10V
Q
g(10)
R
= 0.89Ω
L
I
= 1.0mA
g(REF)
(Figure 13)
Threshold Gate Charge
Q
3.7
9.8
24
g(TH)
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Q
gs
gd
Q
-
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2
HUFA75639S3ST-F085A
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
V
= 25V, V = 0V,
GS
-
-
-
2000
500
65
-
-
-
pF
pF
pF
ISS
DS
f = 1MHz
(Figure 12)
Output Capacitance
C
C
OSS
Reverse Transfer Capacitance
RSS
Source to Drain Diode Specifications
PARAMETER
Source to Drain Diode Voltage
Reverse Recovery Time
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.25
110
UNITS
V
V
I
I
I
= 56A
-
-
-
-
-
-
SD
SD
SD
SD
t
= 56A, dI /dt = 100A/µs
SD
ns
rr
Reverse Recovered Charge
Q
= 56A, dI /dt = 100A/µs
320
nC
RR
SD
Typical Performance Curves
1.2
1.0
0.8
0.6
0.4
0.2
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
o
150
175
o
T
, CASE TEMPERATURE ( C)
T , CASE TEMPERATURE ( C)
C
C
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
1
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
SINGLE PULSE
10
1
2
PEAK T = P
x Z
x R + T
θJC C
J
DM
θJC
0.01
-4
10
-3
-2
-1
0
1
-5
10
t, RECTANGULAR PULSE DURATION (s)
10
10
10
10
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
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3
HUFA75639S3ST-F085A
Typical Performance Curves (Continued)
1000
100
10
o
T
= 25 C
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
C
o
CURRENT AS FOLLOWS:
175 - T
150
C
I = I
25
V
= 10V
GS
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
-5
10
-4
-3
-2
10
-1
0
1
10
10
10
10
10
t, PULSE WIDTH (s)
FIGURE 4. PEAK CURRENT CAPABILITY
300
If R = 0
1000
100
t
= (L)(I )/(1.3*RATED BV
- V
)
AV
AS
DSS
DD
T
T
= MAX RATED
= 25 C
J
C
If R ≠ 0
o
t
AV
= (L/R)ln[(I *R)/(1.3*RATED BV
AS
- V ) +1]
DD
DSS
100
o
STARTING T = 25 C
J
100µs
o
STARTING T = 150 C
J
10
1
1ms
OPERATION IN THIS
AREA MAY BE
10ms
V
= 100V
LIMITED BY r
DS(ON)
DSS(MAX)
10
0.001
0.01
0.1
1
1
10
, DRAIN TO SOURCE VOLTAGE (V)
100
200
t
, TIME IN AVALANCHE (ms)
AV
V
DS
NOTE: Refer to ON Semiconductor Application Notes AN9321 and AN9322.
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
100
100
V
= 6V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
GS
175 C
V
= 15V
80
60
40
20
0
80
60
40
20
0
DD
V
= 20V
= 10V
= 7V
GS
V
GS
V
GS
V
= 5V
GS
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
o
o
25 C
-55 C
o
T
= 25 C
C
0
1.5
3.0
4.5
6.0
7.5
0
1
2
3
4
5
6
7
V
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
, GATE TO SOURCE VOLTAGE (V)
DS
FIGURE 7. SATURATION CHARACTERISTICS
FIGURE 8. TRANSFER CHARACTERISTICS
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4
HUFA75639S3ST-F085A
Typical Performance Curves (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0
1.2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
= V , I = 250µA
DS
GS
D
V
= 10V, I = 56A
D
GS
1.0
0.8
0.6
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs
JUNCTION TEMPERATURE
RESISTANCE vs JUNCTION TEMPERATURE
1.2
3000
V
= 0V, f = 1MHz
GS
ISS
I
= 250µA
D
C
C
C
= C
+ C
GS
GD
2500
2000
1500
1000
500
= C
≈ C + C
RSS
OSS
GD
DS
GD
1.1
1.0
0.9
C
ISS
C
C
OSS
RSS
0
-80
-40
0
40
80
120
160
200
0
10
20
30
40
50
60
o
V
, DRAIN TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE ( C)
DS
J
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
8
6
4
WAVEFORMS IN
DESCENDING ORDER:
I
I
I
= 56A
= 37A
= 18A
D
D
D
2
V
= 50V
DD
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
NOTE: Refer to ON Semiconductor Application Notes AN7254 and AN7260.
FIGURE 13. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
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HUFA75639S3ST-F085A
Test Circuits and Waveforms
V
DS
BV
DSS
L
t
P
V
DS
I
VARY t TO OBTAIN
P
AS
+
V
DD
R
REQUIRED PEAK I
G
AS
V
DD
-
V
GS
DUT
t
P
I
AS
0V
0
0.01Ω
t
AV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
V
DS
V
Q
g(TOT)
R
DD
L
V
DS
V
= 20V
GS
V
Q
GS
g(10)
+
-
V
DD
V
= 10V
V
GS
GS
DUT
V
= 2V
GS
I
0
G(REF)
Q
g(TH)
Q
Q
gd
gs
I
g(REF)
0
FIGURE 16. GATE CHARGE TEST CIRCUIT
FIGURE 17. GATE CHARGE WAVEFORM
V
t
t
DS
ON
OFF
t
d(OFF)
t
d(ON)
t
t
f
R
L
r
V
DS
90%
90%
+
V
GS
V
DD
10%
10%
0
-
DUT
90%
50%
R
GS
V
GS
50%
PULSE WIDTH
10%
V
GS
0
FIGURE 18. SWITCHING TIME TEST CIRCUIT
FIGURE 19. RESISTIVE SWITCHING WAVEFORMS
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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