HUFA75852G3-F085 [ONSEMI]
150 V、75 A、13 mΩ、TO-247N 沟道 UltraFET®;
| 型号： | HUFA75852G3-F085 |
| 厂家： | 
ONSEMI |
| 描述： | 150 V、75 A、13 mΩ、TO-247N 沟道 UltraFET® |
| 文件： | 总9页 (文件大小：549K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MOSFET – Power, N-Channel,
UltraFET
75 V, 150 A, 0,016 W
HUFA75852G3-F085
Features
www.onsemi.com
• Ultra Low On−Resistance
− R
= 0.016 W, V = 10 V
GS
DS(ON)
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• AEC−Q101 Qualified and PPAP Capable
• This Device is Pb−Free and is RoHS Compliant
D
G
S
DRAIN
(TAB)
G
D
S
JEDEC TO−247
CASE 340CK
MARKING DIAGRAM
$Y&Z&3&K
75852G
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
75852G
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
HUFA75852G3−F085/D
April, 2020 − Rev. 4
HUFA75852G3−F085
ABSOLUTE MAXIMUM RATINGS (T = 25°C, Unless otherwise noted)
C
Symbol
Parameter
Value
Unit
V
V
DSS
DGR
Drain to Source Voltage (Note 1)
150
V
Gate to Gate Voltage (R = 20 kW) (Note 1)
150
V
GS
V
GS
Gate to Source Voltage
20
V
I
D
Drain Current Continuous (T = 25°C, V = 10 V) (Figure 2)
75
75
A
C
GS
Drain Current Continuous (T = 100°C, V = 10 V) (Figure 2)
A
C
GS
I
Pulsed Drain Current
Pulsed Avalanche Rating
Power Dissipation
Figure 4
Figures 6, 14, 15
500
DM
UIS
P
(T = 25°C)
C
W
W/°C
°C
D
− Derate Above 25°C
Operating and Storage Temperature
3.33
T , T
−55 to +175
300
J
STG
T
L
Maximum Temperature
for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s
°C
T
pkg
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Starting T = 25°C to 150°C.
J
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Package
Brand
HUFA75852G3−F085
TO−247
75852G
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2
HUFA75852G3−F085
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
OFF STATE CHARACTERISTICS
B
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
I
= 250 mA, V = 0 V (Figure 11)
150
V
VDSS
D
GS
I
V
V
V
= 140 V, V = 0 V
1
mA
DSS
DS
DS
GS
GS
= 135 V, V = 0 V, T = 150_C
250
100
GS
C
I
Gate to Source Leakage Current
=
20 V
nA
GSS
ON STATE CHARACTERISTICS
V
GS(TH)
R
DS(ON)
Gate to Source Threshold Voltage
Drain to Source On Resistance
V
= V , I = 250 mA (Figure 10)
2.0
4.0
V
GS
DS
D
I
D
= 75 A, V = 10 V (Figure 9)
0.013
0.016
W
GS
THERMAL CHARACTERISTICS
TO−247
0.30
30
°C/W
°C/W
R
R
Thermal Resistance Junction to Case
q
JC
JA
Thermal Resistance Junction to
Ambient
q
SWITCHING CHARACTERISTICS
t
Turn-On Time
Turn-On Delay Time
Rise Time
V
D
= 75 V
260
ns
ns
ns
ns
ns
ns
on
DD
I
= 75 A
t
22
151
82
d(on)
V
= 10 V
= 2.0 W
GS
R
GS
t
r
(Figures 18, 19)
t
Turn-Off Delay Time
Fall Time
d(off)
t
f
107
t
Turn-Off Time
285
off
GATE CHARGE CHARACTERISTICS
Q
Total Gate Charge
V
V
V
V
= 0 V to 20 V
= 0 V to 10 V
= 0 V to 2 V
V = 75 V
DD
400
215
15
480
260
17.5
nC
nC
nC
nC
nC
g(TOT)
GS
GS
GS
I
I
= 75 A
D
Q
Total Gate Charge 10 V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
g(10)
= 1.0 mA
g(REF)
(Figures 13,16,17)
Q
g(TH)
Q
Q
= 75 V, I = 75 A
= 1.0 mA, (Figures 13,16, 17)
25
gs
DD
D
I
g(REF)
66
gd
CAPACITANCE CHARACTERISTICS
C
Input Capacitance
V
= 25 V, V = 0 V, f = 1 MHz
7690
1650
535
pF
pF
pF
ISS
DS
GS
(Figure 12)
C
Output Capacitance
OSS
RSS
C
Reverse Transfer Capacitance
SOURCE TO DRAIN DIODE CHARACTERISTICS
V
Source to Drain Diode Voltage
I
I
I
= 75 A
= 35 A
1.25
1.00
260
V
V
SD
SD
SD
SD
t
Reverse Recovery Time
= 75 A, dl /dt = 100 A/ms
ns
nC
rr
SD
Q
Reverse Recovery Charge
1830
rr
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
HUFA75852G3−F085
TYPICAL CHARACTERISTICS
(T = 25°C unless otherwise noted)
C
1.2
1.0
0.8
0.6
0.4
0.2
0
80
60
40
20
0
V
= 10V
GS
50
75
100
175
25
125
150
0
25
50
75
100
125
o
150
175
o
T
, CASE TEMPERATURE ( C)
C
T , CASE TEMPERATURE ( C)
C
Figure 1. Normalized Power
Figure 2. Maximum Continuous
Dissipation vs. Case Temperature
Drain Current vs Case Temperature
2
1
DUTY CYCLE −DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
0.1
P
DM
NOTES:
t
1
DUTY FACTOR : D=t /t
SINGLE PULSE
1
2
t
PEAK T = P
x Z
x R
+ T
q
JC C
2
q
JC
J
DM
0.01
−5
10
−4
10
−3
10
−2
10
−1
0
1
10
10
t, RECTANGULAR PULSE DURATION (s)
10
Figure 3. Normalized Maximum Transient Thermal Impedance
2000
1000
o
T
C
= 25 C
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
o
CURRENT AS FOLLOWS:
175 − T
C
I = I
25
V
GS
= 10V
150
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
50
−5
10
−4
10
−3
10
−2
10
−1
10
0
1
10
10
DTH (s)
t, PULSE WI
Figure 4. Peak Current Capability
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4
HUFA75852G3−F085
TYPICAL CHARACTERISTICS (Continued)
T
C
= 25°C unless otherwise noted
NOTE: Refer to ON Semiconductor Application Notes
AN−7514 and AN−7515
1000
100
1000
100
10
If R = 0
t
= (L)(I )/(1.3*R ATED BV
− V
DSS DD
)
AV
If R p 0
= (L/R)l n[(I *R)/(1.3*RATED BV
AS
t
AV
− V ) +1]
AS
DSS
DD
100 ms
o
STARTING T = 25 C
J
1ms
OPERATION IN THIS
AREA MAY BE
10
1
o
STARTING T = 150 C
J
LIMITED BY R
DS(ON)
10ms
SINGLE PULSE
T
T
= MAX RATED
J
C
o
= 25 C
0.01
1
10
100
500
0.1
10
1
t
, TIME IN AVALANCHE (ms)
V
, DRAIN TO SOURCE VOLTAGE (V)
AV
DS
Figure 5. Forward Bias Safe Operating Area
Figure 6. Unclamped Inductive Switching
Capability
200
150
100
200
150
100
50
PULSE DURATION = 80 ms
V
= 10V
= 7V
= 6V
V
= 20V
GS
GS
DUTY CYCLE = 0.5% MAX
V
GS
V
DD
= 15V
V
GS
V
=5V
GS
o
T
= 175 C
J
o
T
= 25 C
J
50
0
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
o
T
= 25 C
o
C
T
= −55 C
J
0
01
2
3
45
6
23
4
5
6
V
, GATE TO SOURCE VOLTAGE (V)
V
, DRAIN TO SOURCE VOLTAGE (V)
GS
DS
Figure 7. Transfer Characteristics
Figure 8. Saturation Characteristics
2.8
1.2
PULSE DURATION = 80 ms
DUTY CYCLE = 0.5% MAX
V
GS
= V , I = 250 mA
DS
D
2.2
1.6
1.0
0.8
0.6
0.4
1.0
0.4
V
= 10V, I = 75A
GS
D
−80
−40
0
40
80
120
160
200
−80
−40
0
40
80
120
160
200
o
o
T , JUNCTION TEMPERATURE ( C)
T , JUNCTION TEMPERATURE ( C)
J
J
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
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5
HUFA75852G3−F085
TYPICAL CHARACTERISTICS (Continued)
(T = 25°C unless otherwise noted)
C
1.2
1.1
20000
10000
I
= 250 mA
D
C
ISS
ꢀ C
+ C
GS GD
C
ꢀ C
GD
RSS
1000
100
C
C + C
^
DS GD
OSS
1.0
0.9
V
= 0V, f = 1MHz
1.0
GS
−80
−40
0
40
80
120
160
200
0.1
10
100
o
, JUNCTION T
T
EMPERATURE ( C)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
J
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs. Drain to Source
Voltage
10
V
= 75V
DD
8
6
4
2
0
WAVEFORMS IN
DESCENDING ORDER:
I
D
I
D
= 75A
= 30A
0
50
100
150
200
25 0
Q , GATE CHARGE (nC)
g
Figure 13. Gate Charge Waveforms for Constant Gate Current
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6
HUFA75852G3−F085
TEST CIRCUITS AND WAVEFORMS
V
DS
L
VARY tp TO OBTAIN
REQUIRED PEAK I
AS
R
G
+
V
DD
DUT
−
V
GS
tp
0 V
I
AS
0.01 W
Figure 14. Unclamped Energy
Test Curcuit
Figure 15. Unclamped Energy
Waveforms
V
DS
R
L
V
GS
+
V
DD
DUT
−
I
g(REF)
Figure 16. Gate Charge Test Circuit
Figure 17. Gate Charge Waveforms
V
DS
R
L
+
V
GS
V
DD
−
DUT
R
GS
V
GS
Figure 18. Switching Time Test Circuit
Figure 19. Switching Time Waveforms
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD SHORT LEAD
CASE 340CK
ISSUE A
DATE 31 JAN 2019
P1
D2
A
E
P
A
A2
Q
E2
S
D1
D
E1
B
2
2
1
3
L1
A1
b4
L
c
(3X) b
(2X) b2
M
M
B A
0.25
MILLIMETERS
MIN NOM MAX
4.58 4.70 4.82
2.20 2.40 2.60
1.40 1.50 1.60
1.17 1.26 1.35
1.53 1.65 1.77
2.42 2.54 2.66
0.51 0.61 0.71
20.32 20.57 20.82
(2X) e
DIM
A
A1
A2
b
b2
b4
c
GENERIC
D
MARKING DIAGRAM*
D1 13.08
~
~
D2
E
0.51 0.93 1.35
15.37 15.62 15.87
AYWWZZ
XXXXXXX
XXXXXXX
E1 12.81
~
~
E2
e
L
4.96 5.08 5.20
5.56
15.75 16.00 16.25
3.69 3.81 3.93
3.51 3.58 3.65
XXXX = Specific Device Code
~
~
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ = Assembly Lot Code
L1
P
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
P1 6.60 6.80 7.00
Q
S
5.34 5.46 5.58
5.34 5.46 5.58
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13851G
TO−247−3LD SHORT LEAD
PAGE 1 OF 1
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