ISL9R1560P2 [ONSEMI]
15A，600V，STEALTH™ 二极管;
| 型号： | ISL9R1560P2 |
| 厂家： | 
ONSEMI |
| 描述： | 15A，600V，STEALTH™ 二极管 二极管 |
| 文件： | 总10页 (文件大小：488K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHt Diode
15 A, 600 V
ISL9R1560G2, ISL9R1560P2,
ISL9R1560S3S
Description
The ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S is a STEALTH
diode optimized for low loss performance in high frequency hard
switched applications. The STEALTH family exhibits low reverse
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ANODE
recovery current (I ) and exceptionally soft recovery under typical
CATHODE
(BOTTOM SIDE
METAL)
rr
CATHODE
operating conditions. This device is intended for use as a free wheeling
or boost diode in power supplies and other power switching
$Y&Z&3&K
R1560G2
applications. The low I and short ta phase reduce loss in switching
rr
transistors. The soft recovery minimizes ringing, expanding the range
of conditions under which the diode may be operated without the use
of additional snubber circuitry. Consider using the STEALTH diode
with an SMPS IGBT to provide the most efficient and highest power
density design at lower cost.
TO−247−2LD
CASE 340CL
ANODE
CATHODE
Features
$Y&Z&3&K
R1560P2
• Stealth Recovery t = 29.4 ns (@ I = 15 A)
rr
F
CATHODE
(FLANGE)
• Max Forward Voltage, V = 2.2 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
TO−220−2LD
CASE 340BA
CATHODE
(FLANGE)
• These Devices are Pb−Free and are RoHS Compliant
Applications
• SMPS
$Y&Z&3&K
R1560S3S
N/C
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
ANODE
2
D PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
• Snubber Diode
MARKING DIAGRAM
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
R1560G2, R1560P2,
R1560S3S
= Specific Device Code
SYMBOL
K
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2001
1
Publication Order Number:
March, 2020 − Rev. 4
ISL9R1560S3S/D
ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S
DEVICE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Ratings
Unit
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
600
600
V
V
V
R
600
V
Average Rectified Forward Current (T = 145°C)
I
15
A
C
F(AV)
Repetitive Peak Surge Current (20 kHz Square Wave)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
I
30
A
FRM
I
200
A
FSM
P
D
150
W
mJ
°C
Avalanche Energy (1 A, 40 mH)
E
20
AVL
Operating and Storage Temperature Range
T
T
−55 to +175
J, STG
Maximum Temperature for Soldering
T
PKG
300
260
°C
°C
L
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s, See Techbrief TB334
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
R1560G2
Package
Packing Method
Reel Size
N/A
Tape Width
N/A
Quantity
30
ISL9R1560G2
ISL9R1560P2
ISL9R1560S3ST
TO−247−2LD
TO−220−2LD
Tube
Tube
Reel
R1560P2
N/A
N/A
50
2
R1560S3S
TO−263(D −PAK)
13″ dia
24 mm
800
THERMAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
−
Typ
−
Max
Unit
°C/W
°C/W
°C/W
°C/W
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
R
1.0
30
62
62
q
JC
R
R
R
TO−247
TO−220
TO−263
−
−
q
q
q
JA
JA
JA
−
−
−
−
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2
ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
Instantaneous Reverse Current
I
R
V
R
= 600 V
T
T
= 25°C
−
−
−
−
100
1.0
mA
C
= 125°C
mA
C
On State Characteristics
Instantaneous Forward Voltage
V
F
I = 15 A
F
T
T
= 25°C
−
−
1.8
2.2
2.0
V
V
C
= 125°C
1.65
C
Dynamic Characteristics
Junction Capacitance
C
t
V
= 10 V, I = 0 A
−
62
−
pF
J
R
F
Switching Characteristics
Reverse Recovery Time
−
−
−
−
−
−
−
−
−
−
−
−
−
−
25
35
30
40
−
ns
ns
ns
A
I = 1 A, dI /dt = 100 A/ms, V = 30 V
F
rr
F
R
I = 15 A, dI /dt = 100 A/ms, V = 30 V
F
F
R
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
t
I
I = 15 A,
29.4
3.5
57
rr
F
dI /dt = 200 A/ms,
F
−
rr
V
= 390 V,
= 25°C
R
C
T
Q
−
nC
ns
rr
t
rr
I = 15 A,
90
−
F
dI /dt = 200 A/ms,
F
Softness Factor (t / )
S
2.0
5.0
275
52
−
b ta
V
= 390 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
I
rr
−
A
Q
−
nC
ns
rr
t
rr
I = 15 A,
−
F
dI /dt = 800 A/ms,
F
Softness Factor (t / )
S
1.36
13.5
390
800
−
b ta
V
= 390 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
I
rr
−
A
Q
−
nC
rr
Maximum di/dt During t
dI dt
M/
−
A/ms
b
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3
ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S
TYPICAL PERFORMANCE CURVES
30
4000
175°C
1000
25
20
15
10
150°C
175°C
125°C
150°C
125°C
100
25°C
100°C
10
75°C
25°C
100°C
1
5
0
0.1
2.25
1.75 2.0
1.5
0.75 1.0
1.25
300
400
500
600
0.5
100
200
V , Reverse Voltage (V)
R
V , Forward Voltage (V)
F
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Forward Current vs. Forward Voltage
100
80
100
V
= 390 V, T = 125°C
J
V
b
= 390 V, T = 125°C
J
R
R
t AT dI /dt = 200 A/ms, 500 A/ms, 800 A/ms
F
t AT I = 30 A, 15 A, 7.5 A
b
F
80
60
40
60
40
20
0
20
0
t AT I = 30 A, 15 A, 7.5 A
a
F
t AT dI /dt = 200 A/ms, 500 A/ms, 800 A/ms
a
F
1400 1600
600 800 1000 1200
200
400
30
10
15
20
25
0
5
dI /dt, Current Rate of Change (A/ms)
F
I , Forward Current (A)
F
Figure 4. ta and tb Curves vs. dIF/dt
Figure 3. ta and tb Curves vs. Forward Current
25
20
15
10
16
V
R
= 390 V, T = 125°C
dI /dt = 800 A/ms
V
R
= 390 V, T = 125°C
J
F
J
I = 30 A
14
12
10
F
I = 15 A
F
dI /dt = 500 A/ms
F
I = 7.5 A
F
8
6
4
2
dI /dt = 200 A/ms
F
5
0
25
30
0
5
10
15
20
200 400 600 800 1000 1200 1400 1600
dI /dt, Current Rate of Change (A/ms)
F
I , Forward Current (A)
F
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
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4
ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S
TYPICAL PERFORMANCE CURVES (continued)
2.5
700
V
R
= 390 V, T = 125°C
J
V
R
= 390 V, T = 125°C
J
I = 30 A
F
I = 30 A
F
600
500
400
300
200
2.0
1.5
I = 15 A
F
I = 15 A
F
I = 7.5 A
F
1.0
0.5
I = 7.5 A
F
1200 1400 1600
200 400 600 800 1000
1400 1600
1000 1200
200 400 600
800
dI /dt, Current Rate of Change (A/ms)
F
dI /dt Current Rate of Change (A/ms)
F
Figure 7. Reverse Recovery Softness Factor
vs. dIF/dt
Figure 8. Reverse Recovered Charge vs. dIF/dt
1200
16
14
12
10
8
1000
800
600
400
6
4
200
0
2
0
140 145 150 155
160
165 170 175
0.1
1
10
V , Reverse Voltage (V)
100
T , Case Temperature (°C)
C
R
Figure 10. DC Current Derating Curve
Figure 9. Junction Capacitance vs. Reverse
Voltage
Duty Cycle − Descending Order
0.5
1.0
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
Notes:
Duty Factor: D = t /t
1
2
Single Pulse
Peak T = P
x Z
x R
+ T
JA A
q
q
J
DM
JA
0.01
−3
−2
−1
0
1
−5
−4
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
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5
ISL9R1560G2, ISL9R1560P2, ISL9R1560S3S
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
DUT CURRENT
SENSE
t
rr
F
I
F
R
t
a
t
b
G
+
0
V
DD
V
GE
−
MOSFET
t
1
0.25 I
RM
t
2
I
RM
Figure 13. trr Waveforms and Definitions
Figure 12. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
AVL
Q = IGBT (BV
DD
2
= 1/2LI [V
/(V
− V )]
R(AVL
R(AVL)
R(AVL) DD
> DUT V
)
1
CES
V
AVL
R
L
+
V
CURRENT
SENSE
I
L
I
L
DD
Q
I V
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220−2LD
CASE 340BA
ISSUE O
DATE 31 AUG 2016
4.036
3.636
10.360
10.109
A
C
M
0.36
B A
1.400
8.89
6.86
B
2.860
2.660
6.477
6.121
1.146
7°
3°
3
15.215
14.757
8.787
5°
3°
5°
3°
8.587
1
2
0.60 MAX
2.755
2.555
13.894
12.941
3.962
3.720
1.65
1.25
1.91
0.889
0.787
M
0.36
C A B
0.457
0.357
2.640
2.440
5.180
4.980
NOTES:
5°
3°
5°
3°
A. PACKAGE REFERENCE: JEDEC TO220
VARIATION AC.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSION AND TOLERANCE AS PER ASME
Y14.5−2009.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
4.672
4.472
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13831G
TO−220−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
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相关型号：
ISL9R1560S3ST_NL
Rectifier Diode, 1 Phase, 1 Element, 15A, 600V V(RRM), Silicon, TO-263AB,
FAIRCHILD
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