ISL9R1560PF2 [ONSEMI]
15 A、600 V STEALTH™ 二极管;
| 型号： | ISL9R1560PF2 |
| 厂家： | 
ONSEMI |
| 描述： | 15 A、600 V STEALTH™ 二极管 局域网 功效 二极管 |
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ISL9R1560PF2
15 A, 600 V, STEALTH Diode
Description
The ISL9R1560PF2 is a STEALTH diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH family exhibits low reverse recovery current (I ) and
RR
exceptionally soft recovery under typical operating conditions. This
device is intended for use as a free wheeling or boost diode in power
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supplies and other power switching applications. The low I and
RR
short ta phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under which the
diode may be operated without the use of additional snubber circuitry.
Consider using the STEALTH diode with an SMPS IGBT to provide
the most efficient and highest power density design at lower cost.
Features
TO−220F
2 LEAD
CASE 221AS
• Stealth Recovery, t = 29.4 ns (@ I = 15 A)
rr
F
• Max. Forward Voltage, V = 2.2 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• These Devices are Pb−Free and are RoHS Compliant
MARKING DIAGRAM
Applications
R1560
PF2
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
• Snubber Diode
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Rating
Symbol
Value
600
600
600
15
Unit
V
R1560PF2 = Specific Device Marking
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
Average Rectified Forward Current
I
A
F(AV)
(T = 25°C)
C
1. Cathode
2. Anode
Repetitive Peak Surge Current
(20 kHz Square Wave)
I
30
A
A
FRM
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase 60 Hz)
I
200
FSM
Power Dissipation
P
37
20
W
mJ
°C
D
Avalanche Energy (1 A, 40 mH)
E
AVL
Operating and Storage Temperature
Range
T , T
−55 to
175
J
STG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case
for 10s
T
L
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2007
1
Publication Order Number:
December, 2017 − Rev. 2
ISL9R1560PF2/D
ISL9R1560PF2
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Tape Width
Quantity
ISL9R1560PF2
R1560PF2
TO−220F−2L
N/A
50 Units
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Symbol
OFF STATE CHARACTERISTICS
Instantaneous Reverse Current
Parameter
Test Conditions
Min
Typ
Max
Unit
I
R
V
V
= 600 V, T = 25°C
−
−
−
−
100
1.0
mA
R
C
= 600 V, T = 125°C
mA
R
C
ON STATE CHARACTERISTICS
Instantaneous Forward Voltage
V
F
I = 15 A, T = 25°C
−
−
1.8
2.2
2.0
V
V
F
C
I = 15 A, T = 125°C
1.65
F
C
DYNAMIC CHARACTERISTICS
Junction Capacitance
SWITCHING CHARACTERISTICS
C
I = 0 A, V = 10 V
−
62
−
pF
J
F
R
t
rr
Reverse Recovery Time
−
−
25
35
30
40
ns
ns
I = 1 A, dI /dt = 100 A/ms,
F
F
V
R
= 30 V
I = 15 A, dI /dt = 100 A/ms,
F
F
V
R
= 30 V
t
I
Reverse Recovery Time
I = 15 A,
−
−
−
−
−
−
−
−
−
−
−
−
29.4
3.5
57
−
−
−
−
−
−
−
−
−
−
−
−
ns
A
rr
F
dI /dt = 200 A/ms,
F
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
rr
V
= 390 V, T = 25°C
R
C
Q
nC
ns
rr
t
rr
I = 15 A,
90
F
dI /dt = 200 A/ms,
F
S
Softness Factor (t /t )
2.0
5.0
275
52
b
a
V
= 390 V, T = 125°C
R
C
I
rr
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
A
Q
nC
ns
rr
t
rr
I = 15 A,
F
dI /dt = 800 A/ms,
F
S
Softness Factor (t /t )
1.36
13.5
390
800
b
a
V
= 390 V, T = 125°C
R
C
I
rr
Maximum Reverse Recovery Current
Reverse Recovered Charge
A
Q
nC
rr
dI /dt
M
Maximum di/dt during t
A/ms
b
THERMAL CHARACTERISTICS
R
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
−
−
−
−
4.1
70
°C/W
°C/W
q
JC
JA
TO−247
q
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
ISL9R1560PF2
TYPICAL PERFORMANCE CHARACTERISTICS
30
25
20
15
10
4000
o
175 C
1000
o
150 C
o
175 C
o
125 C
o
150 C
100
10
o
25 C
o
o
100 C
125 C
o
75 C
o
100 C
1
5
0
o
25 C
0.1
100
200
300
400
500
600
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
V , FORWARD VOLTAGE (V)
V
, REVERSE VOLTAGE (V)
F
R
Figure 1. Forward Current vs. Forward Voltage
Figure 2. Reverse Current vs. Reverse Voltage
100
100
80
V
= 390V, T = 1255C
V
= 390V, T = 1255C
R
J
R
J
t
AT I = 30A, 15A, 7.5A
F
80
60
40
20
0
b
t
AT dI /dt = 200A/ms, 500A/ms, 800A/ms
F
b
60
40
20
0
t
AT dI /dt = 200A/ms, 500A/ms, 800A/ms
F
t
AT I = 30A, 15A, 7.5A
F
a
a
0
5
10
15
20
25
30
200
400
600
800
1000
1200
1400
1600
I , FORWARD CURRENT (A)
dI /dt, CURRENT RATE OF CHANGE (A/ms)
F
F
Figure 3. ta and tb Curves vs. Forward Current
Figure 4. ta and tb Curves vs. dIF/dt
25
20
15
10
5
16
dI /dt = 800A/ms
F
V
= 390V, T = 1255C
R
J
V
= 390V, T = 1255C
R
J
I
= 30A
= 7.5A
F
14
12
I
= 15A
F
dI /dt = 500A/ms
F
10
I
F
8
6
dI /dt = 200A/ms
F
4
2
0
200
0
5
10
15
20
25
30
400
600
800
1000
1200
1400
1600
I , FORWARD CURRENT (A)
dI /dt, CURRENT RATE OF CHANGE (A/ms)
F
F
Figure 5. Maximum Reverse Recovery Current vs.
Forward Current
Figure 6. Maximum Reverse Recovery Current vs. dIF/dt
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3
ISL9R1560PF2
TYPICAL PERFORMANCE CHARACTERISTICS
700
2.5
2.0
1.5
1.0
0.5
V
= 390V, T = 1255C
V
= 390V, T = 1255C
R
J
R
J
I
= 30A
F
I
= 30A
F
600
500
400
300
200
I
= 15A
= 7.5A
F
I
= 15A
F
I
F
I
= 7.5A
800
F
200
400
600
800
1000
1200
1400
1600
200
400
600
1000
1200
1400
1600
dI /dt, CURRENT RATE OF CHANGE (A/ms)
dI /dt, CURRENT RATE OF CHANGE (A/µs)
F
F
Figure 7. Reverse Recovery Softness Factor vs. dIF/dt
Figure 8. Reverse Recovered Charge vs. dIF/dt
1200
1000
800
600
400
200
0
0.1
1
10
100
o
T , CASE TEMPERATURE ( C)
C
V
, REVERSE VOLTAGE (V)
R
Figure 9. Junction Capacitance vs. Reverse Voltage
Figure 10. DC Current Derating Curve
2.0
DUTY CYCLE − DESCENDING ORDER
1.0
0.1
0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
0.01
0.001
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
−5
−4
−3
−2
−1
0
1
10
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
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4
ISL9R1560PF2
TEST CIRCUIT AND WAVEFORMS
VGE AMPLITUDE AND
RG CONTROL dIF/dt
t1 AND t2 CONTROL IF
L
dIF
t
rr
IF
dt
t
t
b
a
DUT
CURRENT
0
SENSE
RG
+
0.25 I RM
IRM
VDD
−
VGE
MOSFET
t1
t2
Figure 12. Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1W
VDD = 50V
E
AVL = 1/2LI2[VR(AVL)/(VR(AVL) − VDD)]
VAVL
Q
1 = IGBT (BVCES > DUT V R(AVL)
)
LR
+
VDD
CURRENT
SENSE
IL
IL
Q1
IV
VDD
DUT
−
t0
t1
t2
t
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−220 Fullpack, 2−Lead / TO−220F−2FS
CASE 221AS
ISSUE O
DATE 29 FEB 2012
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON67438E
TO−220 FULLPACK, 2−LEAD / TO−220F−2FS
PAGE 1 OF 1
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