ISL9R18120S3ST [ONSEMI]
18A，1200V，STEALTH™ 肖特基二极管;
| 型号： | ISL9R18120S3ST |
| 厂家： | 
ONSEMI |
| 描述： | 18A，1200V，STEALTH™ 肖特基二极管 肖特基二极管 |
| 文件： | 总9页 (文件大小：6476K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STEALTHt Diode
18 A, 1200 V
ISL9R18120G2,
ISL9R18120S3S
Description
The ISL9R18120G2, ISL9R18120S3S is a STEALTH diode
optimized for low loss performance in high frequency hard switched
applications. The STEALTH family exhibits low reverse recovery
www.onsemi.com
ANODE
current (I ) and exceptionally soft recovery under typical operating
CATHODE
(BOTTOM SIDE
METAL)
RR
CATHODE
conditions. This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching applications.
$Y&Z&3&K
R18120G2
The low I and short ta phase reduce loss in switching transistors.
RR
The soft recovery minimizes ringing, expanding the range
of conditions under which the diode may be operated without the use
of additional snubber circuitry. Consider using the STEALTH diode
with an SMPS IGBT to provide the most efficient and highest power
density design at lower cost.
TO−247−2LD
CASE 340CL
CATHODE
(FLANGE)
Features
$Y&Z&3&K
R18120S3S
• Stealth Recovery t = 300 ns (@ I = 18 A)
rr
F
N/C
• Max Forward Voltage, V = 3.3 V (@ T = 25°C)
F
C
ANODE
• 1200 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
2
D PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
• These Devices are Pb−Free and are RoHS Compliant
Applications
MARKING DIAGRAM
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
R18120G2,
R18120S3S
• Snubber Diode
= Specific Device Code
SYMBOL
K
A
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2020 − Rev. 3
ISL9R18120S3S/D
ISL9R18120G2, ISL9R18120S3S
DEVICE MAXIMUM RATINGS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Ratings
1200
1200
1200
18
Unit
V
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
RWM
V
V
V
R
V
Average Rectified Forward Current (T = 92°C)
I
A
C
F(AV)
Repetitive Peak Surge Current (20 kHz Square Wave)
Non−repetitive Peak Surge Current (Halfwave 1 Phase 60 Hz)
Power Dissipation
I
36
A
FRM
I
200
A
FSM
P
D
125
W
mJ
°C
Avalanche Energy (1 A, 40 mH)
E
20
AVL
Operating and Storage Temperature Range
T
T
−55 to +175
J, STG
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case for 10 s
Package Body for 10 s
T
PKG
300
260
°C
°C
L
T
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
PACKAGE MARKING AND ORDERING INFORMATION
Device
Device Marking
R18120G2
Package
Packing Method
Tape Width
N/A
Quantity
30
ISL9R18120G2
ISL9R18120S3ST
TO−247−2LD
Tube
Reel
2
R18120S3S
TO−263−3LD (D −PAK)
24 mm
800
THERMAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
TO−247, TO−263
Min
−
Typ
−
Max
1.0
30
Unit
°C/W
°C/W
°C/W
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Ambient
R
q
JC
R
TO−247
TO−263
−
−
q
JA
R
−
−
62
q
JA
www.onsemi.com
2
ISL9R18120G2, ISL9R18120S3S
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
C
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Off State Characteristics
Instantaneous Reverse Current
I
R
V
R
= 1200 V
T
T
= 25°C
−
−
−
−
100
1.0
mA
C
= 125°C
mA
C
On State Characteristics
Instantaneous Forward Voltage
V
F
I = 18 A
F
T
T
= 25°C
−
−
2.7
2.5
3.3
3.1
V
V
C
= 125°C
C
Dynamic Characteristics
Junction Capacitance
C
t
V
= 10 V, I = 0 A
−
69
−
pF
J
R
F
Switching Characteristics
Reverse Recovery Time
−
−
−
−
−
−
−
−
−
−
−
−
−
−
38
60
45
70
−
ns
ns
ns
A
I = 1 A, dI /dt = 100 A/ms, V = 30 V
F
rr
F
R
I = 18 A, dI /dt = 100 A/ms, V = 30 V
F
F
R
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
t
I
I = 18 A,
300
6.5
950
400
7.0
8.0
2.0
235
5.2
22
rr
F
dI /dt = 200 A/ms,
F
−
rr
V
= 780 V,
= 25°C
R
C
T
Q
−
nC
ns
−
rr
t
rr
I = 18 A,
−
F
dI /dt = 200 A/ms,
F
Softness Factor (t / )
S
−
b ta
V
= 780 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
I
rr
−
A
Q
−
mC
ns
−
rr
t
rr
I = 18 A,
−
F
dI /dt = 1000 A/ms,
F
Softness Factor (t / )
S
−
b ta
V
= 780 V,
= 125°C
R
C
T
Reverse Recovery Current
Reverse Recovered Charge
I
rr
−
A
Q
2.1
370
−
mC
A/ms
rr
Maximum di/dt During t
dI dt
M/
−
b
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
ISL9R18120G2, ISL9R18120S3S
TYPICAL PERFORMANCE CURVES
30
25
20
15
1000
100
10
1
10
5
0.1
0
0.01
0.25
0.75 1.25
1.75
2.25
2.75
3.25
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V , Reverse Voltage (kV)
R
V , Forward Voltage (V)
F
Figure 2. Reverse Current vs. Reverse Voltage
Figure 1. Forward Current vs. Forward Voltage
600
600
500
400
500
400
300
300
200
100
0
200
100
0
200
600
800
1000 1200 1400
400
0
3
6
9
12 15 18 21 24 27 30
dI /dt, Current Rate of Change (A/ms)
F
I , Forward Current (A)
F
Figure 4. ta and tb Curves vs. dIF/dt
Figure 3. ta and tb Curves vs. Forward Current
25
25
20
15
20
15
10
10
5
5
0
3
6
9
12 15 18
21 24 27 30
1400
200
400
600
800
1000 1200
I , Forward Current (A)
F
dI /dt, Current Rate of Change (A/ms)
F
Figure 5. Maximum Reverse Recovery Current
vs. Forward Current
Figure 6. Maximum Reverse Recovery Current
vs. dIF/dt
www.onsemi.com
4
ISL9R18120G2, ISL9R18120S3S
TYPICAL PERFORMANCE CURVES (continued)
10
9
3600
3200
2800
2400
2000
1600
1200
800
8
7
6
5
4
3
1200
dI /dt, Current Rate of Change (A/ms)
1400
200
400
1000
600
800
200
400
600
800
1000 1200 1400
dI /dt Current Rate of Change (A/ms)
F
F
Figure 8. Reverse Recovered Charge
vs. dIF/dt
Figure 7. Reverse Recovery Softness Factor
vs. dIF/dt
−8.5
−9.0
1200
400
380
360
340
320
1000
800
−9.5
−10.0
−10.5
−11.0
600
300
280
260
240
400
200
0
−11.5
−12.0
−12.5
0.01
0.1
1
10
100
50
75
100
125
150
25
V , Reverse Voltage (V)
R
T , Case Temperature (°C)
C
Figure 9. Junction Capacitance vs. Reverse
Voltage
Figure 10. Reverse Recovery Current and Times
vs. Case Temperature
60
40
20
0
25
50
75
100
125
150 175
T , Case Temperature (°C)
C
Figure 11. DC Current Derating Curve
www.onsemi.com
5
ISL9R18120G2, ISL9R18120S3S
TYPICAL PERFORMANCE CURVES (continued)
1.0
0.1
0.01
1
−3
−2
−1
0
−5
−4
10
10
10
10
10
10
10
t, Rectangular Pulse Duration (s)
Figure 12. Normalized Maximum Transient Thermal Impedance
TEST CIRCUIT AND WAVEFORMS
V
AMPLITUDE AND
GE
G
R
CONTROL dI /dt
F
L
t AND t Control I
1
2
F
dI
dt
DUT CURRENT
SENSE
t
rr
F
I
F
R
t
a
t
b
G
+
0
V
DD
V
GE
−
MOSFET
t
1
0.25 I
RM
t
2
I
RM
Figure 14. trr Waveforms and Definitions
Figure 13. trr Test Circuit
I = 1 A
L = 40 mH
R < 0.1 W
V
E
= 50 V
AVL
Q = IGBT (BV
DD
2
= 1/2LI [V
/(V
− V )]
R(AVL
R(AVL)
R(AVL) DD
> DUT V
)
1
CES
V
AVL
R
L
+
V
CURRENT
SENSE
I
L
I
L
DD
Q
I V
1
V
DD
DUT
−
t
t
1
t
2
t
0
Figure 16. Avalanche Current and Voltage
Waveforms
Figure 15. Avalanche Energy Test Circuit
STEALTH is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−2LD
CASE 340CL
ISSUE A
DATE 03 DEC 2019
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXXX
XXXXXXX
XXXX = Specific Device Code
A
Y
= Assembly Location
= Year
WW = Work Week
ZZ
= Assembly Lot Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13850G
TO−247−2LD
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
D2PAK−3 (TO−263, 3−LEAD)
CASE 418AJ
ISSUE F
DATE 11 MAR 2021
SCALE 1:1
XXXXXX = Specific Device Code
A
= Assembly Location
WL
Y
= Wafer Lot
= Year
GENERIC MARKING DIAGRAMS*
WW
W
M
G
AKA
= Work Week
= Week Code (SSG)
= Month Code (SSG)
= Pb−Free Package
= Polarity Indicator
XX
AYWW
XXXXXXXXG
AKA
XXXXXXXXG
AYWW
XXXXXX
XXYMW
XXXXXXXXX
AWLYWWG
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
IC
Standard
Rectifier
SSG
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
98AON56370E
D2PAK−3 (TO−263, 3−LEAD)
PAGE 1 OF 1
DESCRIPTION:
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
ISL9R30120G2_NL
Rectifier Diode, 1 Phase, 1 Element, 30A, 1200V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN
FAIRCHILD
ISL9R3060G2_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 30A, 600V V(RRM), Silicon, TO-247, ROHS COMPLIANT, TO-247, 2 PIN
FAIRCHILD
ISL9R460P2_NL
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明