ISL9R860P2 [ONSEMI]
8A，600V，STEALTH™ 二极管;
| 型号： | ISL9R860P2 |
| 厂家： | 
ONSEMI |
| 描述： | 8A，600V，STEALTH™ 二极管 软恢复二极管 快速软恢复二极管 局域网 |
| 文件： | 总11页 (文件大小：1002K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
August 2018
ISL9R860P2, ISL9R860S3ST
8 A, 600 V, STEALTH™ Diode
Features
• Stealth Recovery t = 28 ns (@ I = 8 A)
Description
rr
F
The ISL9R860P2, ISL9R860S3ST is a STEALTH™ diode
optimized for low loss performance in high frequency hard
switched applications. The STEALTH™ family exhibits low
reverse recovery current (IRR) and exceptionally soft recovery
under typical operating conditions. This device is intended for
use as a free wheeling or boost diode in power supplies and
other power switching applications. The low IRR and short ta
phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under
which the diode may be operated without the use of additional
snubber circuitry. Consider using the STEALTH™ diode with
an SMPS IGBT to provide the most efficient and highest
power density design at lower cost.
• Max Forward Voltage, V = 2.4 V (@ T = 25°C)
F
C
• 600 V Reverse Voltage and High Reliability
• Avalanche Energy Rated
• RoHS Compliant
Applications
•
SMPS FWD
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• Snubber Diode
Package
Symbol
2
JEDEC TO-263AB(D -PAK)
JEDEC TO-220AC-2L
K
CATHODE
(FLANGE)
ANODE
CATHODE
(FLANGE)
CATHODE
N/C
ANODE
A
Device Maximum Ratings T = 25°C unless otherwise noted
C
Symbol
Parameter
Unit
V
V
V
A
Ratings
V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
600
600
600
8
RRM
V
RWM
V
R
o
I
Average Rectified Forward Current (T = 147 C)
F(AV)
C
I
I
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1 A, 40 mH)
Operating and Storage Temperature Range
16
100
85
A
A
W
mJ
°C
FRM
FSM
P
D
E
20
AVL
T , T
-55 to 175
J
STG
T
PKG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
°C
°C
L
T
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
1
www.fairchildsemi.com
Package Marking and Ordering Information
Part Number Top Mark
Packing Method Reel Size Tape Width Quantity
Package
ISL9R860P2
R860P2
Tube
N/A
N/A
TO-220AC-2L
50
TO-263AB(D2-PAK)
ISL9R860S3ST
Reel
13" Dia
24mm
R860S3S
800
Electrical Characteristics T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max Unit
Off State Characteristics
I
Instantaneous Reverse Current
T
T
= 25°C
= 125°C
-
-
-
-
100
1.0
µA
mA
V
= 600 V
R
C
C
R
On State Characteristics
V
Instantaneous Forward Voltage
T
T
= 25°C
= 125°C
-
-
2.0
1.6
2.4
2.0
V
V
I = 8 A
F
C
C
F
Dynamic Characteristics
C
Junction Capacitance
-
30
-
pF
V
= 10 V, I = 0 A
F
J
R
Switching Characteristics
Reverse Recovery Time
-
-
-
-
-
-
-
-
-
-
-
-
18
21
28
3.2
50
77
3.7
3.4
150
53
2.5
6.5
195
500
25
30
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
t
I
= 1 A, di /dt = 100 A/µs, V = 30 V
F R
rr
F
I
I
= 8 A, di /dt = 100 A/µs, V = 30 V
F
F R
= 8 A,
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
t
F
rr
di /dt = 200 A/µs,
V
F
R
I
Q
rr
= 390 V, T = 25°C
C
rr
rr
rr
t
I
= 8 A,
rr
F
di /dt = 200 A/µs,
S
I
Q
Softness Factor (t /t )
F
R
C
b
a
V
T
= 390 V,
= 125°C
Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Time
A
nC
ns
rr
t
I
= 8 A,
rr
F
di /dt = 600 A/µs,
S
I
Q
Softness Factor (t /t )
F
R
C
b
a
V
T
= 390 V,
= 125°C
Reverse Recovery Current
Reverse Recovery Charge
A
nC
A/µs
rr
dI /dt
Maximum di/dt during t
-
-
M
b
Thermal Characteristics
R
R
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient TO-220
Thermal Resistance Junction to Ambient TO-263
-
-
-
-
1.75 °C/W
θJC
θJA
θJA
62
62
°C/W
°C/W
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
2
www.fairchildsemi.com
Typical Performance Curves
16
100
10
1
o
175 C
o
14
12
10
8
175 C
o
o
150 C
150 C
o
25 C
o
125 C
o
125 C
o
100 C
o
100 C
6
4
o
25 C
2
0
0.1
0
0.25 0.5 0.75
1
1.25 1.5 1.75
2
2.25 2.5 2.75
100
200
300
400
500
600
V
, REVERSE VOLTAGE (V)
V , FORWARD VOLTAGE (V)
R
F
Figure 1. Forward Current vs Forward Voltage
Figure 2. Reverse Current vs Reverse Voltage
80
90
V
= 390V, T = 125°C
J
V
= 390V, T = 125°C
J
R
R
80
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
= 200A/µs, 500A/µs, 800A/µs
tb AT diF/dt
t
AT I = 16A, 8A, 4A
F
b
ta AT diF/dt = 200A/µs, 500A/µs, 800A/µs
t
AT I = 16A, 8A, 4A
F
a
0
2
4
6
8
10
12
14
16
100
200
300 400
500
600
700 800
900 1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
I , FORWARD CURRENT (A)
F
Figure 4. t and t Curves vs di /dt
Figure 3. ta and tb Curves vs Forward Current
a
b
F
14
11
V
= 390V, T = 125°C
J
R
diF/dt = 800A/µs
V
= 390V, T = 125°C
J
R
10
9
12
10
8
I
= 16A
F
8
diF/dt = 500A/µs
I
= 8A
F
7
6
I
= 4A
6
F
5
4
diF/dt = 200A/µs
4
2
3
2
0
0
2
4
6
8
10
12
14
16
100
200
300
400
500
600
700
800
900 1000
I , FORWARD CURRENT (A)
F
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current
vs Forward Current
Figure 6. Maximum Reverse Recovery Current
vs di /dt
F
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
3
www.fairchildsemi.com
Typical Performance Curves (Continued)
350
300
250
200
150
100
50
6
V
= 390V, T = 125°C
J
V
= 390V, T = 125°C
J
R
R
5
4
3
2
1
I
I
I
= 16A
= 8A
= 4A
F
I
I
= 16A
F
F
I
= 8A
F
F
F
= 4A
400
100
200
300
500
600
700
800
900 1000
100
200
300
400
500
600
700
800
900 1000
diF/dt, CURRENT RATE OF CHANGE (A/µs)
diF/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs di /dt
Figure 8. Reverse Recovery Charge vs di /dt
F
F
1200
1000
800
600
400
200
0
10
8
6
4
2
0
140
145
150
155
160
165
o
170
175
0.1
1
10
100
T
, CASE TEMPERATURE ( C)
C
V
, REVERSE VOLTAGE (V)
R
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. DC Current Derating Curve
DUTY CYCLE - DESCENDING ORDER
0.5
1.0
0.2
0.1
0.05
0.02
0.01
P
DM
0.1
t
1
t
2
NOTES:
DUTY FACTOR: D = t /t
1
2
SINGLE PULSE
PEAK T = P
x Z
x R
+ T
J
DM
θJA
θJA A
0.01
10
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Normalized Maximum Transient Thermal Impedance
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
4
www.fairchildsemi.com
Test Circuits and Waveforms
VGE AMPLITUDE AND
RG CONTROL diF/dt t1
AND t2 CONTROL IF
L
diF
dt
t
rr
I
F
t
t
b
a
DUT
CURRENT
SENSE
0
R
G
+
-
0.25 I
V
RM
V
DD
GE
MOSFET
t
I
RM
1
t
2
Figure 12. trr Test Circuit
Figure 13. trr Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
V
= 50V
= 1/2LI [V
= IGBT (BV
DD
2
E
/(V - V )]
R(AVL) DD
AVL
R(AVL)
V
Q
> DUT V
)
AVL
1
CES
R(AVL)
L
R
+
CURRENT
SENSE
I
I
L
L
Q1
V
DD
I
V
DUT
-
t
t
t
2
t
0
1
Figure 14. Avalanche Energy Test Circuit
Figure 15. Avalanche Current and Voltage
Waveforms
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
5
www.fairchildsemi.com
Mechanical Dimensions
Figure 16. TO-220 2L - 2LD,TO220,JEDEC TO-220 VARIATION AC
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0B2.
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
6
www.fairchildsemi.com
Package Dimensions
Figure 17. TO-263 2L (D2PAK) - 2LD,TO263, SURFACE MOUNT
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specif-
ically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002.
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
7
www.fairchildsemi.com
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP *
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
F-PFS™
FRFET
Sync-Lock™
®*
®
®
®
®
Global Power ResourceSM
GreenBridge™
Green FPS™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
™
®
TinyBoost
TinyBuck
®
®
Green FPS™ e-Series™
Gmax™
GTO™
TinyCalc™
®
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
Current Transfer Logic™
IntelliMAX™
®
DEUXPEED
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
Dual Cool™
®
EcoSPARK
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
EfficentMax™
ESBC™
®
TRUECURRENT *
SerDes™
SMART START™
®
Solutions for Your Success™
®
®
SPM
Fairchild
®
STEALTH™
SuperFET
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
Fairchild Semiconductor
FACT Quiet Series™
®
®
UHC
®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
®
mWSaver
OptoHiT™
OPTOLOGIC
OPTOPLANAR
FACT
FAST
®
®
FastvCore™
FETBench™
FPS™
®
®
SupreMOS
SyncFET™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Advance Information
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Preliminary
First Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
No Identification Needed
Obsolete
Full Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Not In Production
Rev. I66
©2001 Fairchild Semiconductor Corporation
ISL9R860P2, ISL9R860S3ST Rev. 2
8
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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