ISL9V2540S3ST [ONSEMI]
430 V、15 A、1.77 V、250 mJ、D2PAKEcoSPARK® I、N 沟道点火 IGBT;
| 型号： | ISL9V2540S3ST |
| 厂家： | 
ONSEMI |
| 描述： | 430 V、15 A、1.77 V、250 mJ、D2PAKEcoSPARK® I、N 沟道点火 IGBT 栅 双极性晶体管 功率控制 |
| 文件： | 总11页 (文件大小：454K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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November 2009
ISL9V2540S3ST
EcoSPARK N-Channel Ignition IGBT
®
250mJ, 400V
Features
! SCIS Energy = 250mJ at T = 25 C
General Description
o
The ISL9V2540S3ST is a next generation ignition IGBT that
offers outstanding SCIS capability in the industry standard
D²-Pak (TO-263) plastic package. This device is intended
for use in automotive ignition circuits, specifically as a coil
driver. Internal diodes provide voltage clamping without the
need for external components.
J
! Logic Level Gate Drive
! Qualified to AEC Q101
! RoHS Compliant
EcoSPARK
devices can be custom made to specific
®
Applications
clamp voltages. Contact your nearest Fairchild sales office
! Automotive Ignition Coil Driver Circuits
for more information.
! Coil - On Plug Applications
Package
Symbol
COLLECTOR
R1
GATE
GATE
EMITTER
R2
COLLECTOR
(FLANGE)
JEDEC TO-263AB
EMITTER
2
D -Pak
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev. A1
www.fairchildsemi.com
Device Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Ratings
430
Units
V
BV
BV
CER
ECS
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)
24
V
C
E
At Starting T = 25°C, I = 12.9A, L = 3.0mHy
SCIS
250
mJ
mJ
A
SCIS25
J
E
At Starting T = 150°C, I = 10A, L = 3.0mHy
SCIS
150
SCIS150
J
I
Collector Current Continuous, At T = 25°C, See Fig 9
15.5
C25
C
I
Collector Current Continuous, At T = 110°C, See Fig 9
15.3
A
C110
C
V
Gate to Emitter Voltage Continuous
±10
V
GEM
P
Power Dissipation Total T = 25°C
166.7
1.11
W
D
C
Power Dissipation Derating T > 25°C
W/°C
°C
°C
°C
°C
kV
C
T
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
J
T
Storage Junction Temperature Range
STG
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω (HBM)
L
T
260
pkg
ESD
4
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
800 units
V2540S
ISL9V2540S3ST
TO-263AB
330mm
24mm
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
370
390
30
Typ
400
420
-
Max
Units
Off State Characteristics
BV
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
R
= 2mA, V = 0,
430
450
-
V
V
V
CER
C
GE
= 1KΩ, See Fig. 15
T = -40 to 150°C
G
J
I
R
= 10mA, V = 0,
GE
= 0, See Fig. 15
T = -40 to 150°C
CES
C
G
J
BV
BV
I = -75mA, V = 0V,
C GE
ECS
T
= 25°C
C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= ± 2mA
±12
±14
-
25
1
V
GES
GES
I
V
R
= 250V,
= 1KΩ,
See Fig. 11
T
T
= 25°C
-
-
-
-
µA
mA
CER
CER
C
G
= 150°C
C
I
Emitter to Collector Leakage Current
V
= 24V, See T = 25°C
-
-
-
1
40
-
mA
mA
Ω
ECS
EC
C
Fig. 11
T
= 150°C
-
-
C
R
R
Series Gate Resistance
70
-
1
2
Gate to Emitter Resistance
10K
26K
Ω
On State Characteristics
V
Collector to Emitter Saturation Voltage
I
V
= 6A,
T = 25°C,
C
See Fig. 3
-
-
1.37
1.77
1.8
2.2
V
V
CE(SAT)
C
= 4V
GE
V
Collector to Emitter Saturation Voltage
I
= 10A,
T
C
= 150°C
CE(SAT)
C
V
= 4.5V
See Fig. 4
GE
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ISL9V2540S3ST Rev A1.
Dynamic Characteristics
Q
Gate Charge
I
= 10A, V = 12V,
-
15.1
-
nC
G(ON)
C
CE
V
= 5V, See Fig. 14
GE
V
Gate to Emitter Threshold Voltage
I
V
= 1.0mA,
T
T
= 25°C
1.3
-
-
2.2
1.8
V
V
GE(TH)
C
C
C
= V
CE
GE,
= 150°C
0.75
See Fig. 10
V
Gate to Emitter Plateau Voltage
I
= 10A,
-
3.1
-
V
GEP
C
V
= 12V
CE
Switching Characteristics
t
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
V
= 14V, R = 1Ω,
-
-
0.61
2.17
-
-
µs
µs
d(ON)R
CE
L
= 5V, R = 1KΩ
t
GE
G
riseR
T = 25°C
J
t
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
V
V
= 300V, L = 500µHy,
-
-
3.64
2.36
-
-
µs
µs
d(OFF)L
CE
GE
= 5V, R = 1KΩ
t
G
fL
T = 25°C, See Fig. 12
J
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0mHy,
-
-
-
-
250
0.9
mJ
J
R
= 1KΩ, V = 5V, See
G
GE
Fig. 1 & 2
Thermal Characteristics
R
Thermal Resistance Junction-Case
TO-263
°C/W
θJC
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ISL9V2540S3ST Rev A1.
Typical Performance Curves
40
40
35
30
25
20
15
10
5
R
= 1KΩ, V = 5V,V = 14V
GE dd
R
= 1KΩ, V = 5V,V = 14V
GE dd
G
G
35
30
25
20
15
10
5
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
SCIS Curves valid for Vclamp Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
5
0
0
0
0
25
50
75
100
125
150
175
200
1
2
3
4
6
7
8
9
10
t
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.55
2.2
V
= 3.5V
= 4.0V
GE
I
= 10A
I
= 6A
CE
CE
2.1
2.0
1.9
1.8
1.7
1.6
1.5
1.4
V
= 3.5V
1.50
1.45
1.40
1.35
1.30
1.25
GE
V
= 4.5V
V
GE
GE
V
= 4.0V
GE
V
= 4.5V
GE
V
= 5.0V
GE
V
= 5.0V
GE
V
= 10.0V
GE
V
= 10.0V
GE
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
20
20
V
= 10.0V
V
= 10.0V
GE
GE
V
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
V
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
V
V
V
V
V
V
V
V
15
10
5
15
10
5
T
= 25°C
3.5
T
= - 40°C
3.5 4.0
J
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ISL9V2540S3ST Rev A1.
Typical Performance Curves (Continued)
20
20
15
10
5
V
= 10.0V
GE
DUTY CYCLE < 0.5%, V = 5V
CE
PULSE DURATION = 250µs
V
= 5.0V
= 4.5V
= 4.0V
= 3.5V
= 3.0V
GE
GE
GE
GE
GE
15
10
5
V
V
V
V
T
= 175°C
J
T
= 25°C
J
T
= -40°C
3.0
T
= 175°C
3.5 4.0
J
J
0
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1.0
1.5
2.0
2.5
3.5
4.0
175
175
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
GE
CE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
16
2.0
V
= V
GE
= 1mA
CE
V
= 4.0V
GE
I
CE
14
12
10
8
1.8
1.6
1.4
1.2
1.0
6
4
2
0
25
50
75
100
125
150
175
-50
-25
0
25
T JUNCTION TEMPERATURE (°C)
J
50
75
100
125
150
T
, CASE TEMPERATURE (°C)
C
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
10000
1000
100
10
10
Inductive t
I
= 6.5A, V = 5V, R = 1KΩ
GE G
OFF
CE
V
= 24V
ECS
9
8
7
6
5
4
3
2
Resistive t
OFF
V
V
= 300V
CES
CES
1
Resistive t
ON
= 250V
75
0.1
25
50
75
100
125
150
-50
-25
0
25
50
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com
Typical Performance Curves (Continued)
10
8
1500
I
= 1mA, R = 1.25Ω, T = 25°C
L J
G(REF)
FREQUENCY = 1 MHz
1250
1000
CIES
6
V
= 12V
CE
750
4
500
CRES
2
250
COES
V
= 6V
Q
CE
0
0
0
5
10
15
20
25
0
5
10
15
20
25
30
35
40
, GATE CHARGE (nC)
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
G
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
445
440
435
430
T
= - 40°C
J
T
= 175°C
425
420
415
410
405
J
T
= 25°C
J
10
100
1000
5000
R
, SERIES GATE RESISTANCE (Ω)
G
Figure 15. Breakdown Voltage vs Series Gate Resistance
0
10
0.5
0.2
0.1
t1
-1
10
10
0.05
0.02
PD
t2
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X ZθJC X RθJC) + TC
0.01
SINGLE PULSE
-2
-5
-4
-3
-2
-1
10
10
10
T , RECTANGULAR PULSE DURATION (s)
10
10
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ISL9V2540S3ST Rev A1.
Test Circuit and Waveforms
L
VCE
R
or
L
LOAD
C
C
RG
RG = 1KΩ
PULSE
+
-
G
DUT
GEN
VCE
DUT
G
5V
E
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
AS
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
DD
V
GE
DUT
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Unclamped Energy Test Circuit
Figure 20. Unclamped Energy Waveforms
©2009 Fairchild Semiconductor Corporation
ISL9V2540S3ST Rev A1.
www.fairchildsemi.com
SPICE Thermal Model
JUNCTION
th
REV 16 May 2005
ISL9V2540S3ST
CTHERM1 th 6 19e -4
CTHERM2 6 5 12e -3
CTHERM3 5 4 15e -3
CTHERM4 4 3 25e -3
CTHERM5 3 2 69e -3
CTHERM6 2 tl 100e -3
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
RTHERM1 th 6 80e -3
RTHERM2 6 5 81e -3
RTHERM3 5 4 82e -3
RTHERM4 4 3 100e -3
RTHERM5 3 2 150e -3
RTHERM6 2 tl 1645e -4
5
4
3
2
SABER Thermal Model
ISL9V2540S3ST
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 19e -4
ctherm.ctherm2 6 5 = 12e -3
ctherm.ctherm3 5 4 = 15e -3
ctherm.ctherm4 4 3 = 25e -3
ctherm.ctherm5 3 2 = 69e -3
ctherm.ctherm6 2 tl = 100e -3
rtherm.rtherm1 th 6 = 80e -3
rtherm.rtherm2 6 5 = 81e -3
rtherm.rtherm3 5 4 = 82e -3
rtherm.rtherm4 4 3 = 100e -3
rtherm.rtherm5 3 2 = 150e -3
tl
CASE
rtherm.rtherm6 2 tl = 1645e -4
}
©2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ISL9V2540S3ST Rev A1.
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intended to be an exhaustive list of all such trademarks.
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*
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™*
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Programmable Active Droop™
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Global Power ResourceSM
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Gmax™
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™
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®
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Datasheet contains the design specifications for product development. Specifications may change in
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Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I43
© 2009 Fairchild Semiconductor Corporation
www.fairchildsemi.com
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