ISL9V3040D3S [ONSEMI]
Insulated Gate Bipolar Transistor;
| 型号： | ISL9V3040D3S |
| 厂家： | 
ONSEMI |
| 描述： | Insulated Gate Bipolar Transistor 汽车点火 栅 晶体管 |
| 文件： | 总10页 (文件大小：492K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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October 2013
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
®
EcoSPARK 300mJ, 400V, N-Channel Ignition IGBT
Formerly Developmental Type 49362
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and
ISL9V3040S3 are the next generation ignition IGBTs that offer
Applications
•
•
Automotive Ignition Coil Driver Circuits
Coil- On Plug Applications
outstanding SCIS capability in the space saving D-Pak (TO-252), as
well as the industry standard D²-Pak (TO-263), and TO-262 and TO-
220 plastic packages. This device is intended for use in automotive
ignition circuits, specifically as a coil driver. Internal diodes provide
voltage clamping without the need for external components.
Features
•
•
•
Space saving D-Pak package availability
EcoSPARK® devices can be custom made to specific clamp
voltages. Contact your nearest Fairchild sales office for more
information.
o
SCIS Energy = 300mJ at T = 25 C
J
Logic Level Gate Drive
Package
Symbol
JEDEC TO-263AB
JEDEC TO-220AB
E
D²-Pak
C
G
COLLECTOR
G
E
R1
R2
GATE
JEDEC TO-262AA
JEDEC TO-252AA
D-Pak
E
C
G
G
EMITTER
E
COLLECTOR
(FLANGE)
Device Maximum Ratings T = 25°C unless otherwise noted
A
Symbol
Parameter
Collector to Emitter Breakdown Voltage (I = 1 mA)
Ratings
Units
V
BV
BV
430
24
CER
ECS
C
Emitter to Collector Voltage - Reverse Battery Condition (I = 10 mA)
V
C
E
At Starting T = 25°C, I = 14.2A, L = 3.0 mHy
SCIS
300
mJ
mJ
A
SCIS25
J
E
At Starting T = 150°C, I = 10.6A, L = 3.0 mHy
SCIS
170
SCIS150
J
I
Collector Current Continuous, At T = 25°C, See Fig 9
21
C25
C
I
Collector Current Continuous, At T = 110°C, See Fig 9
17
A
C110
C
V
Gate to Emitter Voltage Continuous
±10
V
GEM
P
Power Dissipation Total T = 25°C
150
W
D
C
Power Dissipation Derating T > 25°C
1.0
W/°C
°C
°C
°C
°C
kV
C
T
Operating Junction Temperature Range
-40 to 175
-40 to 175
300
J
T
Storage Junction Temperature Range
STG
T
Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s)
Max Lead Temp for Soldering (Package Body for 10s)
Electrostatic Discharge Voltage at 100pF, 1500Ω
L
T
260
pkg
ESD
4
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
Package Marking and Ordering Information
Device Marking
V3040D
Device
Package
TO-252AA
TO-263AB
TO-220AA
TO-262AA
TO-252AA
TO-263AB
Reel Size
330mm
330mm
Tube
Tape Width
16mm
24mm
N/A
Quantity
2500
800
50
ISL9V3040D3ST
ISL9V3040S3ST
ISL9V3040P3
ISL9V3040S3
ISL9V3040D3S
ISL9V3040S3S
V3040S
V3040P
V3040S
Tube
N/A
50
V3040D
Tube
N/A
75
V3040S
Tube
N/A
50
Electrical Characteristics T = 25°C unless otherwise noted
A
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
BV
Collector to Emitter Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Collector Breakdown Voltage
I
R
= 2mA, V = 0,
370
390
30
400
430
450
-
V
V
V
CER
CES
C
GE
= 1KΩ, See Fig. 15
G
T = -40 to 150°C
J
BV
I
R
= 10mA, V = 0,
420
-
C
GE
= 0, See Fig. 15
G
T = -40 to 150°C
J
BV
BV
I = -75mA, V = 0V,
C GE
T
ECS
= 25°C
C
Gate to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
I
= ± 2mA
±12
±14
-
25
1
V
GES
GES
I
V
R
= 250V,
= 1KΩ,
T
T
= 25°C
-
-
-
-
µA
mA
CER
CER
C
G
= 150°C
C
See Fig. 11
I
Emitter to Collector Leakage Current
V
= 24V, See T = 25°C
-
-
-
1
40
-
mA
mA
Ω
ECS
EC
C
Fig. 11
T
= 150°C
-
-
C
R
R
Series Gate Resistance
70
-
1
2
Gate to Emitter Resistance
10K
26K
Ω
On State Characteristics
V
V
V
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
I
V
= 6A,
T = 25°C,
C
See Fig. 3
-
-
-
1.25
1.58
1.90
1.60
1.80
2.20
V
V
V
CE(SAT)
CE(SAT)
CE(SAT)
C
= 4V
GE
I
V
= 10A,
T
C
= 150°C,
C
= 4.5V
See Fig. 4
GE
I
= 15A,
T
C
= 150°C
C
V
= 4.5V
GE
Dynamic Characteristics
Q
Gate Charge
I
= 10A, V = 12V,
-
17
-
nC
G(ON)
C
CE
V
= 5V, See Fig. 14
GE
V
Gate to Emitter Threshold Voltage
I
V
= 1.0mA,
T
T
= 25°C
1.3
-
-
2.2
1.8
V
V
GE(TH)
C
C
C
= V
CE
GE,
= 150°C
0.75
See Fig. 10
V
Gate to Emitter Plateau Voltage
I
= 10A, V = 12V
-
3.0
-
V
GEP
C
CE
Switching Characteristics
t
Current Turn-On Delay Time-Resistive
Current Rise Time-Resistive
V
V
= 14V, R = 1Ω,
-
-
0.7
2.1
4
7
µs
µs
d(ON)R
CE
L
= 5V, R = 1KΩ
t
GE
G
rR
T = 25°C, See Fig. 12
J
t
Current Turn-Off Delay Time-Inductive
Current Fall Time-Inductive
V
V
= 300V, L = 500µHy,
-
-
4.8
2.8
15
15
µs
µs
d(OFF)L
CE
GE
= 5V, R = 1KΩ
t
G
fL
T = 25°C, See Fig. 12
J
SCIS
Self Clamped Inductive Switching
T = 25°C, L = 3.0 mHy,
-
-
300
mJ
J
R
= 1KΩ, V = 5V, See
G
GE
Fig. 1 & 2
Thermal Characteristics
R
Thermal Resistance Junction-Case
All packages
-
-
1.0
°C/W
θJC
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
Typical Performance Curves
30
30
25
20
15
10
5
R
= 1kΩ, V = 5V,V = 14V
GE dd
R
= 1kΩ, V = 5V,V = 14V
GE dd
G
G
25
20
15
10
5
T
= 25°C
J
T
= 25°C
J
T
= 150°C
J
T
= 150°C
J
SCIS Curves valid for V
Voltages of <430V
SCIS Curves valid for V
Voltages of <430V
clamp
clamp
0
0
0
2
4
6
8
10
0
25
50
75
100
125
150
175
200
t
, TIME IN CLAMP (µS)
L, INDUCTANCE (mHy)
CLP
Figure 1. Self Clamped Inductive Switching
Current vs Time in Clamp
Figure 2. Self Clamped Inductive Switching
Current vs Inductance
1.30
1.8
I
= 6A
V
= 3.7V
CE
GE
I
= 10A
CE
1.7
1.6
1.5
1.4
1.3
1.2
V
= 4.0V
GE
V
= 3.7V
GE
1.26
1.22
1.18
1.14
V
= 4.0V
GE
V
= 4.5V
GE
V
= 4.5V
GE
V
= 5.0V
GE
V = 5.0V
GE
V
= 8.0V
GE
V
= 8.0V
GE
-75 -50 -25
0
25
50
75 100 125 150 175
-75 -50 -25
0
25
50
75 100 125 150 175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 3. Collector to Emitter On-State Voltage vs
Junction Temperature
Figure 4. Collector to Emitter On-State Voltage
vs Junction Temperature
25
25
V
V
= 8.0V
= 5.0V
V
V
V
V
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
GE
GE
GE
20
15
10
5
20
15
10
5
V
V
V
= 4.5V
= 4.0V
= 3.7V
GE
GE
GE
GE
GE
GE
T
= 25°C
J
T
= - 40°C
J
0
0
0
1.0
2.0
3.0
4.0
0
1.0
2.0
3.0
4.0
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
CE
Figure 5. Collector to Emitter On-State Voltage vs
Collector Current
Figure 6. Collector to Emitter On-State Voltage
vs Collector Current
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
Typical Performance Curves (Continued)
25
25
20
15
10
5
DUTY CYCLE < 0.5%, V = 5V
CE
V
= 8.0V
= 5.0V
= 4.5V
= 4.0V
= 3.7V
GE
PULSE DURATION = 250µs
V
V
V
GE
GE
GE
20
15
10
5
V
GE
T
= 150°C
J
T
= 25°C
J
T
= -40°C
J
T
= 175°C
J
0
0
0
1.0
2.0
3.0
4.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
, COLLECTOR TO EMITTER VOLTAGE (V)
V
, GATE TO EMITTER VOLTAGE (V)
CE
GE
Figure 7. Collector to Emitter On-State Voltage vs
Collector Current
Figure 8. Transfer Characteristics
25
2.2
V
= V
GE
CE
V
= 4.0V
GE
I
= 1mA
CE
2.0
1.8
1.6
1.4
1.2
1.0
20
15
10
5
0
-50
-25
0
25
T JUNCTION TEMPERATURE (°C)
J
50
75
100 125 150 175
25
50
75
100
125
150
175
T
, CASE TEMPERATURE (°C)
C
Figure 9. DC Collector Current vs Case
Temperature
Figure 10. Threshold Voltage vs Junction
Temperature
12
10000
1000
100
10
I
= 6.5A, V = 5V, R = 1KΩ
CE
GE
G
V
= 24V
ECS
Resistive t
OFF
10
8
Inductive t
OFF
6
V
= 300V
CES
25
4
1
Resistive t
V
= 250V
ON
CES
2
0.1
-50
-25
0
50
75
100 125 150 175
25
50
75
100
125
150
175
T , JUNCTION TEMPERATURE (°C)
T , JUNCTION TEMPERATURE (°C)
J
J
Figure 11. Leakage Current vs Junction
Temperature
Figure 12. Switching Time vs Junction
Temperature
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
Typical Performance Curves (Continued)
1600
8
7
6
5
4
3
2
1
0
I
= 1mA, R = 1.25Ω, T = 25°C
L J
FREQUENCY = 1 MHz
G(REF)
1200
C
IES
V
= 12V
CE
800
400
0
C
RES
V
= 6V
12
CE
C
OES
0
4
8
16
20
24
28
32
0
5
10
15
20
25
V
, COLLECTOR TO EMITTER VOLTAGE (V)
CE
Q
, GATE CHARGE (nC)
G
Figure 13. Capacitance vs Collector to Emitter
Voltage
Figure 14. Gate Charge
430
I
= 10mA
CER
425
420
415
410
405
400
395
390
T
= - 40°C
J
T
= 175°C
J
T
= 25°C
J
10
100
, SERIES GATE RESISTANCE (Ω)
1000
2000
3000
R
G
Figure 15. Breakdown Voltage vs Series Gate Resistance
0
10
0.5
0.2
0.1
-1
-2
-3
10
0.05
t
1
0.02
0.01
P
D
t
2
10
10
DUTY FACTOR, D = t / t
1
2
PEAK T = (P X Z
X R ) + T
SINGLE PULSE
J
D
θ
JC
θJC C
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
T , RECTANGULAR PULSE DURATION (s)
1
Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
Test Circuit and Waveforms
L
VCE
R
or
L
LOAD
C
C
RG
G
RG = 1KΩ
PULSE
GEN
+
-
G
DUT
E
VCE
DUT
5V
E
Figure 17. Inductive Switching Test Circuit
Figure 18. t and t
Switching Test Circuit
OFF
ON
V
BV
CES
CE
t
P
V
CE
L
I
AS
C
V
DD
VARY t TO OBTAIN
P
+
-
R
REQUIRED PEAK I
G
AS
V
G
DD
DUT
V
GE
E
t
P
I
0V
AS
0
0.01Ω
t
AV
Figure 19. Energy Test Circuit
Figure 20. Energy Waveforms
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
SPICE Thermal Model
REV 7 March 2002
JUNCTION
th
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
CTHERM1 th 6 2.1e -3
CTHERM2 6 5 1.4e -1
CTHERM3 5 4 7.3e -3
CTHERM4 4 3 2.1e -1
CTHERM5 3 2 1.1e -1
CTHERM6 2 tl 6.2e +6
RTHERM1
RTHERM2
RTHERM3
RTHERM4
RTHERM5
RTHERM6
CTHERM1
6
RTHERM1 th 6 1.2e -1
RTHERM2 6 5 1.9e -1
RTHERM3 5 4 2.2e -1
RTHERM4 4 3 6.0e -2
RTHERM5 3 2 5.8e -2
RTHERM6 2 tl 1.6e -3
CTHERM2
CTHERM3
CTHERM4
CTHERM5
CTHERM6
5
SABER Thermal Model
SABER thermal model
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 /
ISL9V3040S3
template thermal_model th tl
thermal_c th, tl
{
4
3
2
ctherm.ctherm1 th 6 = 2.1e -3
ctherm.ctherm2 6 5 = 1.4e -1
ctherm.ctherm3 5 4 = 7.3e -3
ctherm.ctherm4 4 3 = 2.2e -1
ctherm.ctherm5 3 2 =1.1e -1
ctherm.ctherm6 2 tl = 6.2e +6
rtherm.rtherm1 th 6 = 1.2e -1
rtherm.rtherm2 6 5 = 1.9e -1
rtherm.rtherm3 5 4 = 2.2e -1
rtherm.rtherm4 4 3 = 6.0e -2
rtherm.rtherm5 3 2 = 5.8e -2
rtherm.rtherm6 2 tl = 1.6e -3
}
tl
CASE
©2004 Fairchild Semiconductor Corporation
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3 Rev. D4, October 2013
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Definition
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Advance Information
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Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I66
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