ISL9V5036S3ST-F085C_技术文档

DATA SHEET

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ECOSPARK⁾Ignition IGBT

COLLECTOR

500 mJ, 360 V, N−Channel Ignition IGBT

R₁

R₂

GATE

ISL9V5036S3ST,

ISL9V5036P3-F085,

ISL9V5036S3ST-F085C

EMITTER

COLLECTOR

(FLANGE)

General Description

The ISL9V5036S3ST, ISL9V5036S3ST−F085C and

ISL9V5036P3−F085 are the next generation IGBTs that offer

2

outstanding SCIS capability in the D −Pak (TO−263) and TO−220

G

E

C

E

plastic package. These devices are intended for use in automotive

ignition circuits, specifically as coil drivers. Internal diodes provide

voltage clamping without the need for external components.

ECOSPARK devices can be custom made to specific clamp

voltages. Contact your nearest onsemi sales office for more

information.

2

D PAK−3

TO−220−3LD

CASE 340AT

(TO−263, 3−Lead)

CASE 418AJ

MARKING DIAGRAM

Formerly Developmental Type 49443.

AYWW

XXX

XXXXXG

Features

2

• Industry Standard D −Pak package

AYWWZZ

XXXXX

• SCIS Energy = 500 mJ at T = 25°C

J

• Logic Level Gate Drive

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

A

Y

= Assembly Location

Applications

= Year

= Work Week

= Device Code

= Assembly Lot Number

= Pb−Free Package

• Automotive Ignition Coil Driver Circuits

• Coil−On Plug Applications

WW

XXXX

ZZ

G

ORDERING INFORMATION

See detailed ordering and shipping information on page 8 of

this data sheet.

1

Publication Order Number:

July, 2022 − Rev. 4

ISL9V5036S3ST/D

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

A

Parameter

Collector to Emitter Breakdown Voltage (I = 1 mA)

Symbol

Value

390

Unit

V

BV

C

CER

ECS

Emitter to Collector Voltage − Reverse Battery Condition (I = 10 mA)

BV

24

V

C

At Starting T = 25°C, I

= 38.5A, L = 670 ꢀ Hy

E

SCIS25

500

mJ

A

J

SCIS

At Starting T = 150°C, I

= 30A, L = 670 ꢀ Hy

E

SCIS150

300

J

SCIS

Collector Current Continuous, at T = 25°C, See Figure 9

I

46

C

C25

Collector Current Continuous, at T = 110°C, See Figure 9

I

31

A

C

C110

Gate to Emitter Voltage Continuous

V

GEM

10

V

Power Dissipation Total T = 25°C

P

D

250

W

C

Power Dissipation Derating T ꢁ 25°C

1.67

−40 to 175

300

W/°C

°C

kV

C

Operating Junction Temperature Range

T

J

Storage Junction Temperature Range

T

STG

Max Lead Temp for Soldering (Leads at 1.6 mm from Case for 10 s)

Max Lead Temp for Soldering (Package Body for 10s)

T

L

T

pkg

260

Electrostatic Discharge Voltage at100 pF, 1500

ꢂ

ESD

4

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

Unit

Thermal Resistance Junction−Case

R

0.6

°C/W

ꢃ

JC

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2

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

J

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF STATE CHARACTERISTICS

Collector to Emitter Breakdown Voltage

BV

I

R

= 2 mA, V = 0 V,

330

360

390

V

CER

C

GE

= 1 kꢂ

ꢄ

S

e

F

i

g

u

r

e

1

5

G

T = −40 to 150°C

J

Collector to Emitter Breakdown Voltage

Emitter to Collector Breakdown Voltage

I

C

= 10 mA, V = 0 V,

360

30

390

420

V

CES

GE

R

= 0, See Figure 15

G

T = −40 to 150°C

J

I

C

= −75 mA, V = 0 V,

−

ECS

GE

T = 25°C

J

Gate to Emitter Breakdown Voltage

Collector to Emitter Leakage Current

BV

I

=

2 mA

12

14

−

V

GES

V

= 250 V,

T

= 25°C

−

25

ꢀ

A

CER

= 1 kꢂ,

See Figure 11

C

R

G

= 150°C

−

1

mA

C

Emitter to Collector Leakage Current

I

V

= 24 V,

T = 25°C

C

−

1

40

−

ECS

EC

See Figure 11

T

C

= 150°C

Series Gate Resistance

R

−

75

−

ꢂ

1

2

Gate to Emitter Resistance

10

30

kꢂ

ON STATE CHARACTERISTICS

Collector to Emitter Saturation Voltage

V

I

= 10 A, V = 4.0 V

T

= 25°C

−

1.17

1.50

1.60

1.80

V

CE(SAT)

C

GE

C

See Figure 4

Collector to Emitter Saturation Voltage

DYNAMIC CHARACTERISTICS

Gate Charge

= 15 A, V = 4.5 V

T

C

= 150°C

V

CE(SAT)

C

GE

Q

I

C

= 10 A, V = 12 V, V = 5 V,

−

32

−

nC

V

G(ON)

CE

GE

See Figure 14

Gate to Emitter Threshold Voltage

V

I

= 1.0 mA,

T

= 25°C

1.3

0.75

−

2.2

1.8

−

GE(TH)

CE

C

V

= V

,

CE

GE

= 150°C

C

See Figure 10

Gate to Emitter Plateau Voltage

SWITCHING CHARACTERISTICS

Current Turn−On Delay Time−Resistive

V

GEP

I

C

= 10 A, V = 12 V

3.0

V

CE

t

V

= 14 V, R = 1

ꢂ

−

0.7

2.1

4

7

ꢀ

s

d(ON)R

CE

L

= 5 V, R = 1 k

ꢂ

GE

G

Current Rise Time−Resistive

t

rR

d(OFF)L

T = 25°C, See Figure 12

J

Current Turn−Off Delay Time−Inductive

Current Fall Time−Inductive

t

V

= 300 V, L = 2 mH,

−

10.8

2.8

15

CE

= 5 V, R = 1 k

ꢂ

GE

G

t

fL

T = 25°C, See Figure 12

J

Self Clamped Inductive Switching

SCIS

T = 25°C, L = 670 ꢀ H,

J

−

500

mJ

R

= 1 kꢂ, V = 5 V,

GE

G

See Figures 1, 2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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3

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

TYPICAL CHARACTERISTICS

45

40

35

30

25

20

15

10

5

45

R

= 1 kꢂ, V = 5 V, V = 14 V

GE dd

R

= 1 kꢂ, V = 5 V, V = 14 V

GE dd

G

40

35

30

25

20

15

10

5

T = 25°C

J

T = 25°C

J

T = 150°C

J

T = 150°C

J

SCIS Curves valid for V

Voltages of <390 V

SCIS Curves valid for V

Voltages of <390 V

clamp

0

50

100

150

200

250 300

350

8

0

2

4

6

10

t , TIME IN CLAMP (ꢀ s)

CLP

L, INDUCTANCE (mHy)

Figure 1. Self Clamped Inductive Switching

Current vs. Time in Clamp

Figure 2. Self Clamped Inductive Switching

Current vs. Inductance

1.25

1.20

1.15

1.10

1.05

1.00

1.10

1.05

1.00

0.95

0.90

0.85

I

= 10 A

= 4.0 V

CE

I

= 6 A

CE

V

= 3.7 V

GE

V

GE

V

= 3.7 V

GE

V

= 4.0 V

GE

V

= 4.5 V

V

= 4.5 V

GE

V

GE

= 5.0 V

V

GE

= 5.0 V

V

= 8.0 V

GE

V

= 8.0 V

GE

−50 −25

0

25 50

75 100 125 150 175

−50 −25

0

25 50

75 100 125 150 175

T , JUNCTION TEMPERATURE (°C)

J

T , JUNCTION TEMPERATURE (°C)

J

Figure 3. Collector to Emitter On−State Voltage

Figure 4. Collector to Emitter On−State Voltage

vs. Junction Temperature

50

40

30

20

10

0

50

VGE = 8.0 V

V^GE= 5.0 V

V^GE= 4.5 V

V^GE= 4.0 V

V^GE= 3.7 V

VGE = 8.0 V

V^GE= 5.0 V

V^GE= 4.5 V

V^GE= 4.0 V

V^GE= 3.7 V

40

30

20

10

0

T = −40°C

T = 25°C

J

0

1.0

2.0

3.0

4.0

0

1.0

2.0

3.0

4.0

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 5. Collector Current vs. Collector to Emitter

Figure 6. Collector Current vs. Collector to Emitter

On−State Voltage

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4

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

TYPICAL CHARACTERISTICS (continued)

50

VGE = 8.0 V

V^GE= 5.0 V

DUTY CYCLE < 0.5%, V = 5 V

PULSE DURATION = 250 ꢀ s

CE

40 V^GE= 4.5 V

V^GE= 4.0 V

V^GE= 3.7 V

30

40

30

T = 175°C

J

20

10

0

20

10

0

T = 25°C

J

T = −40°C

J

T = 175°C

J

2.5

0

1.0

2.0

3.0

4.0

1.0

1.5

2.0

3.0

3.5

4.0

4.5

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

V

GE

, GATE TO EMITTER VOLTAGE (V)

Figure 7. Collector to Emitter On−State Voltage

Figure 8. Transfer Characteristics

vs. Collector Current

50

40

30

V

GE

= 4.0 V

V

= V

GE

= 1 mA

CE

2.0

I

CE

1.8

1.6

1.4

1.2

1.0

20

10

0

50

−50 −25

0

25 50 75 100 125 150 175

25

75

100

125

150

175

T , CASE TEMPERATURE (°C)

C

T , JUNCTION TEMPERATURE (°C)

J

Figure 9. DC Collector Current vs. Case

Temperature

Figure 10. Threshold Voltage vs. Junction

Temperature

20

18

16

14

12

10

8

10000

1000

100

10

I

= 6.5 A, V = 5 V, R = 1 k

ꢂ

Resistive t

CE

GE

G

OFF

V

ECS

= 24 V

Inductive t

OFF

V

CES

= 300 V

V

= 250 V

CES

6

1

Resistive t

150

ON

4

0.1

−50

2

−25

0

25 50 75 100 125 150 175

25

50

75

100

125

175

T , JUNCTION TEMPERATURE (°C)

J

T , JUNCTION TEMPERATURE (°C)

J

Figure 11. Leakage Current vs. Junction

Temperature

Figure 12. Switching Time vs. Junction

Temperature

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5

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

TYPICAL CHARACTERISTICS (continued)

8

3000

2500

2000

1500

1000

I

= 1 mA, R = 0.6 ꢂ, T = 25°C

FREQUENCY = 1 MHz

G(REF)

L

J

7

6

5

4

3

2

1

0

V

CE

= 12 V

C

IES

C

RES

500

0

V

= 6 V

C

CE

OES

0

5

10

15

20

25

50

0

10

20

30

40

Q , GATE CHARGE (nC)

G

V

CE

, COLLECTOR TO EMITTER VOLTAGE (V)

Figure 13. Capacitance vs. Collector to Emitter

Voltage

Figure 14. Gate Charge

360

I

= 10 mA

T = −40°C

J

CER

358

356

354

352

350

348

346

344

342

340

T = 175°C

J

T = 25°C

J

10

100

1000

2000 3000

R , SERIES GATE RESISTANCE (kꢂ)

G

Figure 15. Breakdown Voltage vs. Series Gate Resistance

0

10

0.5

0.2

0.1

−1

10

0.05

0.02

0.01

−2

−3

−4

10

P

D

t

1

10

t

2

SINGLE PULSE

DUTY FACTOR, D = t / t

1

2

ꢃ

PEAK T = (P × Z

× R

+ T

JC) C

ꢃ

J

D

JC

10

−6

−5

−4

−3

−2

−1

10

t , RECTANGULAR PULSE DURATION (s)

1

Figure 16. IGBT Normalized Transient Thermal Impedance, Junction to Case

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6

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

TEST CIRCUITS AND WAVEFORMS

L

V_CE

R

or

L

LOAD

C

R_G

R_G= 1 kW

PULSE

GEN

+

G

DUT

V_CE

DUT

G

−

5 V

E

Figure 18. t_ONand t_OFFSwitching Test Circuit

Figure 17. Inductive Switching Test Circuit

V

BV

CE

CES

t

P

V

CE

L

I

AS

V

DD

VARY t TO OBTAIN

P

+

R

REQUIRED PEAK I

G

AS

V

DD

−

V

GS

DUT

t

P

0 V

I

AS

0

0.01 W

t

AV

Figure 19. Energy Test Circuit

Figure 20. Energy Waveforms

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7

ISL9V5036S3ST, ISL9V5036P3−F085, ISL9V5036S3ST−F085C

JUNCTION

th

SPICE THERMAL MODEL

ISL9V5036S3ST / ISL9V5036P3−F085 / ISL9V5036

S3ST−F085C

CTHERM1 th 6 4.0e2

CTHERM2 6 5 3.6e-3

CTHERM3 5 4 4.9e-2

CTHERM4 4 3 3.2e-1

CTHERM5 3 2 3.0e-1

CTHERM6 2 tl 1.6e-2

RTHERM1

RTHERM2

RTHERM3

RTHERM4

RTHERM5

RTHERM6

CTHERM1

6

RTHERM1 th 6 1.0e-2

RTHERM2 6 5 1.4e-1

RTHERM3 5 4 1.0e-1

RTHERM4 4 3 9.0e-2

RTHERM5 3 2 9.4e-2

RTHERM6 2 tl 1.9e-2

CTHERM2

CTHERM3

CTHERM4

CTHERM5

CTHERM6

5

SABER THERMAL MODEL

SABER thermal model

ISL9V5036S3ST / ISL9V5036P3−F085 / ISL9V5036

S3ST−F085C

4

3

2

template thermal_model th tl

thermal_c th, tl

{

ctherm.ctherm1 th 6 = 4.0e2

ctherm.ctherm2 6 5 = 3.6e-3

ctherm.ctherm3 5 4 = 4.9e-2

ctherm.ctherm4 4 3 = 3.2e-1

ctherm.ctherm5 3 2 = 3.0e−1

ctherm.ctherm6 2 tl = 1.6e-2

rtherm.rtherm1 th 6 = 1.0e-2

rtherm.rtherm2 6 5 = 1.4e-1

rtherm.rtherm3 5 4 = 1.0e-1

rtherm.rtherm4 4 3 = 9.0e-2

rtherm.rtherm5 3 2 = 9.4e-2

rtherm.rtherm6 2 tl = 1.9e-2

}

tl

CASE

PACKAGE MARKING AND ORDERING INFORMATION

†

Device

ISL9V5036S3ST

Device Marking

V5036S

Package

Shipping

D2PAK−3 (TO−263, 3−Lead)

(Pb−Free)

800 / Tape & Reel

50 Units / Tube

ISL9V5036S3ST−F085C

ISL9V5036P3−F085

V5036SC

V5036P

D2PAK−3 (TO−263, 3−Lead)

(Pb−Free)

TO−220−3LD

(Pb−Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

ECOSPARK is a registered trademark of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States

and/or other countries.

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8

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

TO−220−3LD

CASE 340AT

ISSUE A

DATE 03 OCT 2017

Scale 1:1

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

DESCRIPTION:

98AON13818G

TO−220−3LD

PAGE 1 OF 1

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

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MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

D²PAK−3 (TO−263, 3−LEAD)

CASE 418AJ

ISSUE F

DATE 11 MAR 2021

SCALE 1:1

XXXXXX = Specific Device Code

A

= Assembly Location

WL

Y

= Wafer Lot

= Year

GENERIC MARKING DIAGRAMS*

WW

W

M

G

AKA

= Work Week

= Week Code (SSG)

= Month Code (SSG)

= Pb−Free Package

= Polarity Indicator

XX

AYWW

XXXXXXXXG

AKA

XXXXXXXXG

AYWW

XXXXXX

XXYMW

XXXXXXXXX

AWLYWWG

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present. Some products

may not follow the Generic Marking.

IC

Standard

Rectifier

SSG

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

DOCUMENT NUMBER:

98AON56370E

D²PAK−3 (TO−263, 3−LEAD)

PAGE 1 OF 1

DESCRIPTION:

ON Semiconductor and

are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding

the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically

disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the

rights of others.

www.onsemi.com

onsemi,

, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates

and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.

A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any

products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the

information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use

of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products

and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information

provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may

vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license

under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems

or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should

Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

ADDITIONAL INFORMATION

TECHNICAL PUBLICATIONS:

Technical Library: www.onsemi.com/design/resources/technical−documentation

onsemi Website: www.onsemi.com

ONLINE SUPPORT: www.onsemi.com/support

For additional information, please contact your local Sales Representative at

www.onsemi.com/support/sales




型号：	ISL9V5036S3ST-F085C
厂家：	ONSEMI
描述：	IGBT, 360V, 31A, 1.17V, 500mJ, D2PAKEcoSPARK® II, N-Channel Ignition 双极性晶体管
文件：	总11页 (文件大小：367K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ISL9V5036S3ST-F085C [ONSEMI]

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