J309RLRM [ONSEMI]
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN;型号: | J309RLRM |
厂家: | ONSEMI |
描述: | UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN 放大器 晶体管 |
文件: | 总5页 (文件大小:63K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
J309, J310
Preferred Device
JFET VHF/UHF Amplifiers
N−Channel — Depletion
Features
http://onsemi.com
• Pb−Free Packages are Available*
1 DRAIN
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
3
Drain−Source Voltage
V
25
Vdc
GATE
DS
Gate−Source Voltage
Forward Gate Current
V
25
10
Vdc
GS
GF
I
mAdc
2 SOURCE
Total Device Dissipation @ T = 25°C
P
350
2.8
mW
mW/°C
A
D
Derate above = 25°C
Junction Temperature Range
Storage Temperature Range
T
−65 to +125
−65 to +150
°C
°C
J
T
stg
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
TO−92
CASE 29−11
STYLE 5
1
2
3
MARKING DIAGRAM
J3xx
AYWW G
G
J3xx = Device Code
xx = 09 or 10
A
Y
= Assembly Location
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2006
1
Publication Order Number:
March, 2006 − Rev. 1
J309/D
J309, J310
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Gate−Source Breakdown Voltage
V
−25
−
−
Vdc
(BR)GSS
(I = −1.0 mAdc, V = 0)
G
DS
Gate Reverse Current
I
GSS
(V = −15 Vdc, V = 0, T = 25°C)
−
−
−
−
−1.0
−1.0
nAdc
mAdc
GS
DS
DS
A
A
(V = −15 Vdc, V = 0, T = +125°C)
GS
Gate Source Cutoff Voltage
V
Vdc
GS(off)
(V = 10 Vdc, I = 1.0 nAdc)
J309
J310
−1.0
−2.0
−
−
−4.0
−6.5
DS
D
ON CHARACTERISTICS
(1)
Zero−Gate−Voltage Drain Current
(V = 10 Vdc, V = 0)
I
mAdc
Vdc
DSS
J309
J310
12
24
−
−
30
60
DS
GS
Gate−Source Forward Voltage
(V = 0, I = 1.0 mAdc)
V
−
−
1.0
GS(f)
DS
G
SMALL−SIGNAL CHARACTERISTICS
Common−Source Input Conductance
Re(y )
mmhos
is
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
J309
J310
−
−
0.7
0.5
−
−
DS
D
Common−Source Output Conductance
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
Re(y
)
−
−
−
−
0.25
−
−
−
−
mmhos
dB
os
DS
D
Common−Gate Power Gain
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
G
pg
16
DS
D
Common−Source Forward Transconductance
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
Re(y )
12
mmhos
mmhos
mmhos
fs
DS
D
Common−Gate Input Conductance
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
Re(y )
12
ig
DS
D
Common−Source Forward Transconductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
g
fs
J309
J310
10000
8000
−
−
20000
18000
DS
D
Common−Source Output Conductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
g
−
−
250
mmhos
mmhos
os
DS
D
Common−Gate Forward Transconductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
g
fg
J309
J310
−
−
13000
12000
−
−
DS
D
Common−Gate Output Conductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
g
og
mmhos
J309
J310
−
−
100
150
−
−
DS
D
Gate−Drain Capacitance
(V = 0, V = −10 Vdc, f = 1.0 MHz)
C
C
−
1.8
2.5
pF
pF
gd
DS
GS
Gate−Source Capacitance
(V = 0, V = −10 Vdc, f = 1.0 MHz)
−
4.3
5.0
gs
DS
GS
FUNCTIONAL CHARACTERISTICS
Equivalent Short−Circuit Input Noise Voltage
e
n
−
10
−
Ǹ
nVń Hz
(V = 10 Vdc, I = 10 mAdc, f = 100 Hz)
DS
D
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 3.0%.
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2
J309, J310
ORDERING INFORMATION
†
Device
Package
Shipping
J309
TO−92
1000 Units / Bulk
1000 Units / Bulk
J309G
TO−92
(Pb−Free)
J310
TO−92
J310G
TO−92
(Pb−Free)
J310RLRP
TO−92
2000 Units / Tape & Ammo Box
2000 Units / Tape & Ammo Box
J310RLRPG
TO−92
(Pb−Free)
J310ZL1
TO−92
J310ZL1G
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
70
60
50
40
30
20
10
0
70
60
35
30
T
= −ꢀ55°C
V
= 10 V
A
DS
V
= 10 V
I
T = −ꢀ55°C
A
DS
f = 1.0 MHz
+ꢀ25 °C
+ꢀ25 °C
50
40
30
20
10
25
20
15
10
5.0
0
+ꢀ25 °C
DSS
+ꢀ25 °C
+150°C
−ꢀ55°C
+150°C
+150°C
+ꢀ25 °C
−ꢀ55°C
+150°C
−1.0
0
−5.0
−4.0
−3.0
−2.0
1.0
, GATE−SOURCE VOLTAGE (VOLTS)
0
5.0
4.0
3.0
2.0
I
− V , GATE−SOURCE VOLTAGE (VOLTS)
GS
D
V
GS
I
− V , GATE−SOURCE CUTOFF VOLTAGE (VOLTS)
GS
DSS
Figure 1. Drain Current and Transfer
Characteristics versus Gate−Source Voltage
Figure 2. Forward Transconductance
versus Gate−Source Voltage
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3
J309, J310
100 k
10 k
10
120
96
72
48
24
0
1.0 k
R
DS
Y
fs
Y
fs
7.0
100
C
gs
4.0
V
V
=
ꢀ2.3 V =
10
1.0 k
100
GS(off)
GS(off)
Y
os
= −ꢀ5.7 V =
C
gd
1.0
0
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
0
I , DRAIN CURRENT (mA)
D
V
, GATE SOURCE VOLTAGE (VOLTS)
GS
Figure 3. Common−Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 4. On Resistance and Junction
Capacitance versus Gate−Source Voltage
|S |, |S
|
|S |, |S |
12 22
21
11
0.85 0.45
0.79 0.39
0.73 0.33
0.67 0.27
0.61 0.21
0.55 0.15
0.060 1.00
0.048 0.98
0.036 0.96
0.024 0.94
0.012 0.92
0.90
30
24
18
12
6.0
0
3.0
2.4
1.8
1.2
0.6
S
22
V
= 10 V
= 10 mA
= 25°C
DS
I
D
S
21
T
A
Y
11
V
= 10 V
= 10 mA
= 25°C
DS
I
D
T
A
Y
Y
21
22
S
11
S
12
Y
12
100
200
300
500 700 1000
100
200
300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 5. Common−Gate Y Parameter
Magnitude versus Frequency
Figure 6. Common−Gate S Parameter
Magnitude versus Frequency
q
, q
21 11
q , q
12 22
q
, q
11 12
q
, q
21 22
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
−ꢀ20° 87°
−ꢀ20°
−ꢀ20° 120°
−ꢀ40° 100°
−ꢀ60° 80°
−ꢀ80° 60°
−ꢀ100 ° 40°
−ꢀ120 ° 20°
0
q
11
q
22
q
21
−ꢀ40° 86°
−ꢀ60°
q
−ꢀ20°
−ꢀ40°
−ꢀ60°
−ꢀ80°
−ꢀ100 °
22
q
21
−ꢀ80° 85°
−ꢀ100 °
−ꢀ120 ° 84°
−ꢀ140 °
q
21
q
12
q
q
12
11
V
I
= 10 V
V
I
T
A
= 10 V
= 10 mA
= 25°C
DS
= 10 mA
= 25°C
−ꢀ160 ° 83°
−ꢀ180 °
DS
q
11
D
D
T
A
130°
0°
100
−ꢀ200 ° 82°
200
300
500 700 1000
100
200
300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 7. Common−Gate Y Parameter
Phase−Angle versus Frequency
Figure 8. S Parameter Phase−Angle
versus Frequency
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4
J309, J310
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
P
L
SEATING
PLANE
INCHES
DIM MIN MAX
MILLIMETERS
K
MIN
4.45
4.32
3.18
MAX
5.20
5.33
4.19
0.533
1.39
2.66
0.50
−−−
A
B
C
D
G
H
J
0.175
0.170
0.125
0.016
0.045
0.095
0.015
0.500
0.250
0.080
0.205
0.210
0.165
0.021 0.407
D
X X
0.055
0.105
0.020
−−− 12.70
−−−
1.15
2.42
0.39
G
J
H
V
K
L
6.35
2.04
−−−
2.93
3.43
−−−
C
N
P
R
V
0.105
2.66
2.54
−−−
−−− 0.100
SECTION X−X
0.115
0.135
−−−
−−−
1
N
−−−
N
STYLE 5:
PIN 1. DRAIN
2. SOURCE
3. GATE
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are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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J309/D
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