J309 [ONSEMI]
JFET VHF/UHF Amplifiers; JFET VHF / UHF放大器
| 型号： | J309 |
| 厂家： | 
ONSEMI |
| 描述： | JFET VHF/UHF Amplifiers |
| 文件： | 总8页 (文件大小：163K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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by J308/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Depletion
1 DRAIN
Motorola Preferred Devices
3
GATE
2 SOURCE
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Forward Gate Current
Symbol
Value
Unit
1
V
25
25
10
Vdc
Vdc
DS
GS
GF
2
3
V
CASE 29–04, STYLE 5
TO–92 (TO–226AA)
I
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
A
Junction Temperature Range
Storage Temperature Range
T
–65 to +125
–65 to +150
°C
°C
J
T
stg
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Gate–Source Breakdown Voltage
V
–25
—
—
Vdc
(BR)GSS
(I = –1.0 µAdc, V
DS
= 0)
G
Gate Reverse Current
I
GSS
(V
GS
(V
GS
= –15 Vdc, V
= –15 Vdc, V
= 0, T = 25°C)
—
—
—
—
–1.0
–1.0
nAdc
µAdc
DS
DS
A
= 0, T = +125°C)
A
Gate Source Cutoff Voltage
(V = 10 Vdc, I = 1.0 nAdc)
V
Vdc
GS(off)
J308
J309
J310
–1.0
–1.0
–2.0
—
—
—
–6.5
–4.0
–6.5
DS
D
ON CHARACTERISTICS
(1)
Zero–Gate–Voltage Drain Current
I
mAdc
DSS
(V
DS
= 10 Vdc, V
= 0)
J308
J309
J310
12
12
24
—
—
—
60
30
60
GS
Gate–Source Forward Voltage
(V = 0, I = 1.0 mAdc)
V
GS(f)
—
—
1.0
Vdc
DS
G
SMALL–SIGNAL CHARACTERISTICS
Common–Source Input Conductance
Re(y )
is
mmhos
(V
DS
= 10 Vdc, I = 10 mAdc, f = 100 MHz)
J308
J309
J310
—
—
—
0.7
0.7
0.5
—
—
—
D
Common–Source Output Conductance
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
Re(y
)
—
0.25
—
mmhos
dB
os
DS
Common–Gate Power Gain
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
D
G
—
16
—
pg
DS
D
1. Pulse Test: Pulse Width
300 µs, Duty Cycle
3.0%.
Motorola, Inc. 1997
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)
A
Characteristic
SMALL–SIGNAL CHARACTERISTICS (continued)
Common–Source Forward Transconductance
Symbol
Min
Typ
Max
Unit
Re(y
)
—
—
12
12
—
—
mmhos
mmhos
µmhos
fs
(V
DS
= 10 Vdc, I = 10 mAdc, f = 100 MHz)
D
Common–Gate Input Conductance
(V = 10 Vdc, I = 10 mAdc, f = 100 MHz)
Re(y )
ig
DS
Common–Source Forward Transconductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
D
g
fs
J308
J309
J310
8000
10000
8000
—
—
—
20000
20000
18000
DS
D
Common–Source Output Conductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
g
—
—
250
µmhos
µmhos
os
DS
Common–Gate Forward Transconductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
D
g
fg
J308
J309
J310
—
—
—
13000
13000
12000
—
—
—
DS
D
Common–Gate Output Conductance
(V = 10 Vdc, I = 10 mAdc, f = 1.0 kHz)
g
og
µmhos
J308
J309
J310
—
—
—
150
100
150
—
—
—
DS
D
Gate–Drain Capacitance
(V = 0, V = –10 Vdc, f = 1.0 MHz)
C
C
—
1.8
2.5
pF
pF
gd
DS
Gate–Source Capacitance
(V = 0, V = –10 Vdc, f = 1.0 MHz)
GS
—
4.3
5.0
gs
DS
GS
FUNCTIONAL CHARACTERISTICS
Noise Figure
NF
—
—
1.5
10
—
—
dB
(V
DS
= 10 Vdc, I = 10 mAdc, f = 450 MHz)
D
Equivalent Short–Circuit Input Noise Voltage
(V = 10 Vdc, I = 10 mAdc, f = 100 Hz)
e
n
nV Hz
DS
D
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
50 Ω
U310
50 Ω
SOURCE
LOAD
C3
L2
P
L2
S
L1
C5
C1
C2
C4
C6
C7
1.0 k
RFC
+V
DD
C1 = C2 = 0.8 – 10 pF, JFD #MVM010W.
C3 = C4 = 8.35 pF Erie #539–002D.
C5 = C6 = 5000 pF Erie (2443–000).
C7 = 1000 pF, Allen Bradley #FA5C.
RFC = 0.33 µH Miller #9230–30.
L1 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
L2 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
P
L2 = One Turn #16 Cu, 1/4″ I.D. (Air Core).
S
Figure 1. 450 MHz Common–Gate Amplifier Test Circuit
70
35
70
60
60
50
40
30
20
10
0
30
25
20
15
10
5.0
0
T = –55°C
A
V
= 10 V
DS
f = 1.0 MHz
V
= 10 V
T = –55°C
A
DS
+25°C
+25°C
50
40
30
20
10
+25°C
I
DSS
+25°C
+150°C
–55°C
+150°C
+150°C
+25°C
–55°C
+150°C
–1.0
0
–5.0
–4.0
–3.0
–2.0
1.0
, GATE–SOURCE VOLTAGE (VOLTS)
0
5.0
4.0
3.0
2.0
I
– V , GATE–SOURCE VOLTAGE (VOLTS)
GS
D
V
GS
I
– V , GATE–SOURCE CUTOFF VOLTAGE (VOLTS)
DSS GS
Figure 2. Drain Current and Transfer
Characteristics versus Gate–Source Voltage
Figure 3. Forward Transconductance
versus Gate–Source Voltage
100 k
10 k
10
120
96
72
48
24
0
1.0 k
100
R
DS
Y
fs
Y
fs
7.0
4.0
C
gs
V
V
= –2.3 V =
= –5.7 V =
10
1.0 k
100
GS(off)
GS(off)
Y
os
C
gd
1.0
0
1.0
0.01
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
10 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0
0
I , DRAIN CURRENT (mA)
D
V , GATE SOURCE VOLTAGE (VOLTS)
GS
Figure 4. Common–Source Output
Admittance and Forward Transconductance
versus Drain Current
Figure 5. On Resistance and Junction
Capacitance versus Gate–Source Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
|S |, |S
|
|S |, |S |
12 22
21 11
0.85 0.45
0.060 1.00
30
24
18
12
6.0
0
3.0
2.4
1.8
1.2
0.6
S
22
V
= 10 V
= 10 mA
DS
0.79 0.39
0.73 0.33
0.67 0.27
0.61 0.21
0.55 0.15
0.048 0.98
0.036 0.96
0.024 0.94
0.012 0.92
0.90
I
D
S
21
T = 25°C
A
Y
11
V
= 10 V
= 10 mA
DS
I
D
T = 25°C
A
Y
21
S
11
Y
22
S
12
Y
12
500 700 1000
f, FREQUENCY (MHz)
100
200
300
500 700 1000
100
200
300
f, FREQUENCY (MHz)
Figure 6. Common–Gate Y Parameter
Magnitude versus Frequency
Figure 7. Common–Gate S Parameter
Magnitude versus Frequency
θ
, θ
21 11
θ
, θ
12 22
θ
, θ
11 12
θ
, θ
21 22
180° 50°
170° 40°
160° 30°
150° 20°
140° 10°
–20° 87°
–20° 120°
–40° 100°
–60° 80°
–80° 60°
–100° 40°
–120° 20°
0
θ
11
θ
22
–20°
θ
21
–40° 86°
–60°
θ
–20°
–40°
–60°
–80°
–100°
22
θ
21
–80° 85°
–100°
–120° 84°
–140°
θ
21
θ
12
θ
θ
12
11
V
= 10 V
V
= 10 V
= 10 mA
DS
= 10 mA
–160° 83°
–180°
DS
θ
11
I
I
D
D
T = 25°C
T = 25°C
A
A
130°
0°
100
–200° 82°
200
300
500 700 1000
100
200
300
500 700 1000
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
Figure 8. Common–Gate Y Parameter
Phase–Angle versus Frequency
Figure 9. S Parameter Phase–Angle
versus Frequency
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
24
21
18
15
12
9.0
6.0
3.0
0
7.0
6.0
26
22
18
14
V
= 20 V
DD
f = 450 MHz
BW ≈ 10 MHz
CIRCUIT IN FIGURE 1
5.0
4.0
3.0
2.0
1.0
0
G
pg
V
= 10 V
= 10 mA
G
DS
pg
I
D
NF
T = 25°C
A
CIRCUIT IN FIGURE 1
10
NF
6.0
2.0
4.0 6.0 8.0 10 12
14 16
18 20
22
24
50
100
200 300 500 700 1000
I , DRAIN CURRENT (mA)
D
f, FREQUENCY (MHz)
Figure 10. Noise Figure and
Power Gain versus Drain Current
Figure 11. Noise Figure and Power Gain
versus Frequency
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
C1
C6
U310
D
B
(3 dB) – 36.5 MHz
– 10 mAdc
– 20 Vdc
S
W
I
V
D
DS
G
C4
C3
L1
L3
INPUT
R = 50 Ω
OUTPUT
R = 50 Ω
L
Device case grounded
IM test tones – f1 = 449.5 MHz, f2 = 450.5 MHz
S
C2
L2
C5
C1 = 1–10 pF Johanson Air variable trimmer.
C2, C5 = 100 pF feed thru button capacitor.
C3, C4, C6 = 0.5–6 pF Johanson Air variable
trimmer.
L4
L1 = 1/8″ x 1/32″ x 1–5/8″ copper bar.
L2, L4 = Ferroxcube Vk200 choke.
L3 = 1/8″ x 1/32″ x 1–7/8″ copper bar.
V
S
V
D
SHIELD
Figure 12. 450 MHz IMD Evaluation Amplifier
Amplifier power gain and IMD products are a function of the load impedance. For the amplifier design shown above with C4 and
C6 adjusted to reflect a load to the drain resulting in a nominal power gain of 9 dB, the 3rd order intercept point (IP) value is
29 dBm. Adjusting C4, C6 to provide larger load values will result in higher gain, smaller bandwidth and lower IP values. For
example, a nominal gain of 13 dB can be achieved with an intercept point of 19 dBm.
+40
U310 JFET
3RD ORDER INTERCEPT POINT
+20
0
V
= 20 Vdc
= 10 mAdc
DS
I
D
F1 = 449.5 MHz
F2 = 450.5 MHz
–20
–40
–60
–80
–100
–120
FUNDAMENTAL OUTPUT
Example of intercept point plot use:
Assume two in–band signals of –20 dBm at the amplifier input.
They will result in a 3rd order IMD signal at the output of
–90 dBm. Also, each signal level at the output will be
–11 dBm, showing an amplifier gain of 9.0 dB and an
intermodulation ratio (IMR) capability of 79 dB. The gain and
IMR values apply only for signal levels below comparison.
3RD ORDER IMD OUTPUT
–60
–40
–20
0
+20
–120
–100
–80
INPUT POWER PER TONE (dBm)
Figure 13. Two Tone 3rd Order Intercept Point
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
A
B
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
R
P
L
F
SEATING
PLANE
K
INCHES
DIM MIN MAX
MILLIMETERS
MIN
4.45
4.32
3.18
0.41
0.41
1.15
2.42
0.39
MAX
5.20
5.33
4.19
0.55
0.48
1.39
2.66
0.50
–––
A
B
C
D
F
G
H
J
K
L
N
P
0.175
0.170
0.125
0.016
0.016
0.045
0.095
0.015
0.500
0.250
0.080
–––
0.205
0.210
0.165
0.022
0.019
0.055
0.105
0.020
D
X X
G
J
H
V
C
––– 12.70
–––
0.105
0.100
–––
6.35
2.04
–––
2.93
3.43
–––
SECTION X–X
2.66
2.54
–––
1
N
R
V
0.115
0.135
N
–––
–––
STYLE 5:
PIN 1. DRAIN
CASE 029–04
(TO–226AA)
ISSUE AD
2. SOURCE
3. GATE
6
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specificallydisclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
datasheetsand/orspecificationscananddovaryindifferentapplicationsandactualperformancemayvaryovertime. Alloperatingparameters,including“Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applicationsintended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
ordeathmayoccur. ShouldBuyerpurchaseoruseMotorolaproductsforanysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdMotorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
Opportunity/Affirmative Action Employer.
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Motorola Small–Signal Transistors, FETs and Diodes Device Data
7
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J308/D
◊
相关型号：
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