JANTXV2N3700 [ONSEMI]

MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor;
JANTXV2N3700
型号: JANTXV2N3700
厂家: ONSEMI    ONSEMI
描述:

MIL-PRF-19500/391: 80 V, 1 A NPN Small Signal Transistor

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文件: 总8页 (文件大小:278K)
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2N3019, 2N3019S, 2N3700  
80V, 1A NPN Small Signal  
Transistor  
Features  
MILPRF19500/391Qualified  
http://onsemi.com  
Available as JAN, JANTX, and JANTXV  
COLLECTOR  
3
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
2
BASE  
Characteristic  
CollectorEmitter Voltage  
CollectorBase Voltage  
Symbol  
Value  
80  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
mW  
V
CEO  
V
CBO  
V
EBO  
1
140  
7.0  
EMITTER  
EmitterBase Voltage  
Collector Current Continuous  
I
C
1.0  
Total Device Dissipation @ T = 25°C  
P
P
A
T
2N3019, 2N3019S  
2N3700  
800  
500  
Total Device Dissipation @ T = 25°C  
W
C
T
2N3019, 2N3019S  
5.0  
1.0  
2N3700  
Operating and Storage Junction  
Temperature Range  
T , T  
65 to  
+200  
°C  
J
stg  
TO5  
CASE 205AA  
STYLE 1  
TO39  
CASE 205AB  
STYLE 1  
TO18  
CASE 206AA  
STYLE 1  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
2N3019  
2N3019S  
2N3700  
Thermal Resistance, Junction to Ambient  
2N3019, 2N3019S  
R
°C/W  
q
JA  
195  
325  
2N3700  
ORDERING INFORMATION  
Thermal Resistance, Junction to Case  
2N3019, 2N3019S  
R
°C/W  
q
JC  
Device  
Package  
Shipping  
30  
150  
2N3700  
JAN2N3019  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
JANTX2N3019  
JANTXV2N3019  
JAN2N3019S  
TO5  
Bulk  
JANTX2N3019S  
JANTXV2N3019S  
JAN2N3700  
TO39  
TO18  
Bulk  
Bulk  
JANTX2N3700  
JANTXV2N3700  
© Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
August, 2012 Rev. 2  
2N3019/D  
2N3019, 2N3019S, 2N3700  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 30 mAdc)  
80  
C
EmitterBase Cutoff Current  
I
EBO  
(V = 5.0 Vdc)  
10  
10  
nAdc  
mAdc  
EB  
(V = 7.0 Vdc)  
EB  
CollectorEmitter Cutoff Current  
I
I
CEO  
(V = 90 Vdc)  
10  
10  
nAdc  
CE  
CollectorBase Cutoff Current  
CBO  
(V = 140 Vdc)  
CB  
mAdc  
ON CHARACTERISTICS (Note 1)  
DC Current Gain  
h
FE  
(I = 0.1 mAdc, V = 10 Vdc)  
50  
90  
100  
50  
15  
300  
300  
300  
C
CE  
(I = 10 mAdc, V = 10 Vdc)  
C
CE  
CE  
CE  
CE  
(I = 150 mAdc, V = 10 Vdc)  
C
(I = 500 mAdc, V = 10 Vdc)  
C
(I = 1.0 Adc, V = 10 Vdc)  
C
CollectorEmitter Saturation Voltage  
(I = 150 mAdc, I = 15 mAdc)  
V
V
Vdc  
Vdc  
CE(sat)  
0.2  
0.5  
C
B
(I = 500 mAdc, I = 50 mAdc)  
C
B
BaseEmitter Saturation Voltage  
(I = 150 mAdc, I = 15 mAdc)  
BE(sat)  
1.1  
C
B
SMALLSIGNAL CHARACTERISTICS  
Magnitude of SmallSignal Current Gain  
|h |  
fe  
(I = 50 mAdc, V = 10 Vdc, f = 20 MHz)  
5.0  
80  
20  
400  
12  
C
CE  
SmallSignal Current Gain  
h
fe  
(I = 1.0 mAdc, V = 5 Vdc, f = 1 kHz)  
C
CE  
Output Capacitance  
C
pF  
pF  
dB  
ps  
obo  
(V = 10 Vdc, I = 0, 100 kHz f 1.0 MHz)  
CB  
E
Input Capacitance  
C
ibo  
(V = 0.5 Vdc, I = 0, 100 kHz f 1.0 MHz)  
60  
EB  
C
Noise Figure  
NF  
r’ ,C  
(V = 10 Vdc, I = 100 mAdc, R = 1 kW, PBW = 200 Hz)  
4.0  
400  
CE  
C
g
CollectorBase Time Constant  
(V = 10 Vdc, I = 10 mAdc, f = 79.8 MHz)  
b
C
CB  
C
SWITCHING CHARACTERISTICS  
Pulse Response  
t
on  
+ t  
off  
ns  
(Reference Figure in MILPRF19500/391)  
30  
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
http://onsemi.com  
2
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO5 3Lead  
CASE 205AA  
ISSUE B  
DATE 06 JUL 2012  
SCALE 1:1  
B
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: INCHES.  
A
DETAIL X  
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.  
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE  
PLANE DEFINED BY DIMENSION R.  
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.  
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.  
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­  
SIONS A, B, AND T.  
U
P
C
K
U
SEATING  
PLANE  
L
A
R
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.  
F
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
NOTE 5  
MAX  
0.370  
0.335  
0.260  
0.021  
0.125  
0.019  
0.034  
0.040  
1.750  
---  
E
A
B
C
D
E
F
8.89  
8.00  
6.10  
0.41  
0.23  
0.41  
0.71  
0.73  
38.10  
6.35  
9.40 0.350  
8.51 0.315  
6.60 0.240  
0.53 0.016  
3.18 0.009  
0.48 0.016  
0.86 0.028  
1.02 0.029  
44.45 1.500  
--- 0.250  
T
NOTE 7  
DETAIL X  
NOTES 4 & 6  
3X  
D
S
M
0.007 (0.18MM) A B  
C
H
J
K
L
N
2
H
M
N
P
R
T
45 BSC  
_
45 BSC  
_
1
3
5.08 BSC  
0.200 BSC  
---  
---  
1.27  
0.050  
J
1.37 BSC  
--- 0.76  
2.54 --- 0.100  
0.054 BSC  
M
---  
0.030  
---  
LEAD IDENTIFICATION  
DETAIL  
U
C
STYLE 1:  
PIN 1. EMITTER  
2. BASE  
3. COLLECTOR  
98AON49138E  
ON SEMICONDUCTOR STANDARD  
DOCUMENT NUMBER:  
STATUS:  
Electronic versions are uncontrolled except when  
accessed directly from the Document Repository. Printed  
versions are uncontrolled except when stamped  
“CONTROLLED COPY” in red.  
NEW STANDARD:  
DESCRIPTION: TO5 3LEAD  
PAGE 1 OF2
DOCUMENT NUMBER:  
98AON49138E  
PAGE 2 OF 2  
ISSUE  
REVISION  
DATE  
O
A
B
RELEASED FOR PRODUCTION. REQ. BY B. JENSEN.  
CHANGED DIMENSION “D” MAX TO 0.53 MM (0.021 IN). REQ. BY B. JENSEN.  
18 MAR 2010  
10 AUG 2010  
06 JUL 2012  
MADE ISOMETRIC IMAGE LARGER TO REFLECT ACTUAL SIZE. REQ. BY J.  
FULTON.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
©
Semiconductor Components Industries, LLC, 2012  
Case Outline Number:  
July, 2012 Rev. B  
205AA  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO39 3Lead  
CASE 205AB  
ISSUE A  
DATE 25 JUN 2012  
SCALE 1:1  
B
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: INCHES.  
A
DETAIL X  
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.  
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE  
PLANE DEFINED BY DIMENSION R.  
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.  
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.  
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­  
SIONS A, B, AND T.  
U
P
C
K
U
SEATING  
PLANE  
L
A
R
8. DIMENSION B SHALL NOT VARY MORE THAN 0.010 IN ZONE P.  
F
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
NOTE 5  
MAX  
0.370  
0.335  
0.260  
0.019  
0.125  
0.019  
0.034  
0.040  
0.580  
---  
E
A
B
C
D
E
F
8.89  
8.00  
6.10  
0.41  
0.23  
0.41  
0.71  
0.73  
12.70  
6.35  
9.40 0.350  
8.51 0.315  
6.60 0.240  
0.48 0.016  
3.18 0.009  
0.48 0.016  
0.86 0.028  
1.02 0.029  
14.73 0.500  
--- 0.250  
T
NOTE 7  
DETAIL X  
NOTES 4 & 6  
3X  
D
0.007 (0.18MM) A B  
S
M
C
H
J
K
L
N
2
H
M
N
P
R
T
45 BSC  
_
45 BSC  
_
1
3
5.08 BSC  
0.200 BSC  
---  
---  
1.27  
0.050  
J
1.37 BSC  
--- 0.76  
2.54 --- 0.100  
0.054 BSC  
M
---  
0.030  
---  
LEAD IDENTIFICATION  
DETAIL  
U
C
STYLE 1:  
PIN 1. EMITTER  
2. BASE  
3. COLLECTOR  
98AON49134E  
ON SEMICONDUCTOR STANDARD  
DOCUMENT NUMBER:  
STATUS:  
Electronic versions are uncontrolled except when  
accessed directly from the Document Repository. Printed  
versions are uncontrolled except when stamped  
“CONTROLLED COPY” in red.  
NEW STANDARD:  
DESCRIPTION: TO39 3LEAD  
PAGE 1 OF2
DOCUMENT NUMBER:  
98AON49134E  
PAGE 2 OF 2  
ISSUE  
REVISION  
DATE  
O
A
RELEASED FOR PRODUCTION. REQ. BY B. JENSEN.  
18 MAR 2010  
25 JUN 2012  
MADE ISOMETRIC IMAGE LARGER TO REFLECT ACTUAL SIZE. REQ. BY J.  
FULTON.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
© Semiconductor Components Industries, LLC, 2012  
Case Outline Number:  
June, 2012 Rev. A  
205AB  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TO18  
CASE 206AA  
ISSUE A  
DATE 21 AUG 2012  
SCALE 1:1  
B
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: INCHES.  
A
DETAIL X  
B
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.  
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE  
PLANE DEFINED BY DIMENSION R.  
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.  
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.  
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­  
SIONS A, B, AND T.  
U
P
C
K
U
SEATING  
PLANE  
L
A
R
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
F
MAX  
0.230  
0.195  
0.210  
0.021  
0.030  
0.019  
0.046  
0.048  
0.750  
---  
NOTE 5  
A
B
C
D
E
F
5.31  
4.52  
4.32  
0.41  
---  
5.84 0.209  
4.95 0.178  
5.33 0.170  
0.53 0.016  
E
T
NOTE 7  
DETAIL X  
0.76  
---  
NOTES 4 & 6  
3X  
D
0.41  
0.91  
0.71  
12.70  
6.35  
0.48 0.016  
1.17 0.036  
1.22 0.028  
19.05 0.500  
--- 0.250  
S
M
H
J
0.007 (0.18MM) A B  
C
K
L
N
M
N
P
R
T
45 BSC  
_
45 BSC  
_
2
H
2.54 BSC  
0.100 BSC  
---  
1
3
---  
1.27  
0.050  
1.37 BSC  
--- 0.76  
2.54 --- 0.100  
0.054 BSC  
J
---  
0.030  
---  
M
U
LEAD IDENTIFICATION  
DETAIL  
C
STYLE 1:  
STYLE 2:  
STYLE 3:  
PIN 1. EMITTER  
2. BASE  
3. COLLECTOR  
PIN 1. SOURCE, SUBSTRATE  
PIN 1. SOURCE  
2. DRAIN  
3. GATE  
& CASE  
2. GATE  
3. DRAIN  
STYLE 4:  
STYLE 6:  
PIN 1. SOURCE  
2. DRAIN  
3. GATE & CASE  
STYLE 5:  
PIN 1. CATHODE  
2. GATE  
3. ANODE  
PIN 1. EMITTER  
2. BASE 1  
3. BASE 2  
STYLE 7:  
STYLE 9:  
PIN 1. ANODE  
2. BASE  
3. CATHODE  
STYLE 8:  
PIN 1. ANODE 2  
2. ANODE 1  
3. GATE  
PIN 1. GATE  
2. ANODE 1  
3. ANODE 2  
(CONNECTED TO CASE)  
STYLE 10:  
PIN 1. BASE  
2. EMITTER  
3. BASE  
STYLE 11:  
PIN 1. DRAIN  
2. GATE  
STYLE 12:  
PIN 1. SOURCE  
2. GATE  
3. SOURCE, SUBSTRATE  
3. DRAIN (CASE)  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98AON45207E  
TO18 3LEAD  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
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provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may  
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