KLI-2113-AAA-ER-AA [ONSEMI]

线性 CCD 图像传感器;
KLI-2113-AAA-ER-AA
型号: KLI-2113-AAA-ER-AA
厂家: ONSEMI    ONSEMI
描述:

线性 CCD 图像传感器

CD 传感器 换能器 图像传感器
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KLI-2113  
Linear CCD Image Sensor  
Description  
The KLI−2113 Image Sensor is a high dynamic range, multispectral,  
linear CCD image sensor ideally suited for demanding color scanner  
applications.  
The imager consists of three parallel 2098-element photodiode  
arrays − one for each primary color. The KLI−2113 sensor offers high  
sensitivity, a high data rate, low noise, and negligible lag. Independent  
exposure control for each channel allows color balancing at the front  
end. CMOS-compatible 5 V clocks, and single 12 V DC supply are all  
that are required to drive the KLI−2113 sensor, simplifying the design  
of interface electronics.  
www.onsemi.com  
Table 1. GENERAL SPECIFICATIONS  
Parameter  
Architecture  
Typical Value  
3 Channel, RGB Tri-linear CCD  
2098 × 3  
Pixels Count  
Figure 1. KLI−2113 Linear CCD  
Image Sensor  
Pixel Size  
14 mm (H) × 14 mm (V)  
14 mm  
Pixel Pitch  
Inter-Array Spacing  
Active Image Size  
112 mm (8 Lines Effective)  
Features  
29.37 mm (H) × 0.24 mm (V)  
29.4 mm (Diagonal)  
High Resolution  
Wide Dynamic Range  
High Sensitivity  
Saturation Signal  
Dynamic Range  
170,000 e  
76 dB  
High Operating Speed  
High Charge Transfer Efficiency  
No Image Lag  
Responsivity (Wavelength)  
R, G, B (−RAA)  
R, G, B (−DAA)*  
2
62, 42, 37 V/mJ/cm  
2
60, 40, 36 V/mJ/cm  
2
Mono (−AAA, −AAB)  
66 V/mJ/cm  
Electronic Exposure Control  
Pixel Summing Capability  
Up to 2.0 V Peak-Peak Output  
5.0 V Clock Inputs  
Output Sensitivity  
Dark Current  
11.5 mV/e  
0.02 pA/Pixel  
Dark Current Doubling Rate  
Charge Transfer Efficiency  
Photoresponse Non-Uniformity  
Lag (First Field)  
9°C  
0.99999/Transfer  
5% Peak-Peak  
0.6%  
Two-Phase Register Clocking  
On-Chip Dark Reference  
Applications  
Maximum Data Rate  
Package  
20 MHz/Channel  
CERDIP (Sidebrazed, CuW)  
AR Coated, 2 Sides  
Digitization  
Machine Vision  
Mapping/Aerial  
Photography  
Cover Glass  
* Configuration KLI-2113-DAA uses Gen1 color filter set and is not recommended  
for new designs.  
NOTE: Parameters above are specified at T = 25°C and 2 MHz clock rates unless  
ORDERING INFORMATION  
otherwise noted.  
See detailed ordering and shipping information on page 2 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2015  
1
Publication Order Number:  
November, 2015 − Rev. 5  
KLI−2113/D  
KLI−2113  
ORDERING INFORMATION  
Table 2. ORDERING INFORMATION − KLI−2113 IMAGE SENSOR  
Part Number  
Description  
Marking Code  
KLI−2113−AAA−ER−AA  
Monochrome, No Microlens, CERDIP Package (Leadframe),  
Taped Clear Cover Glass with AR Coating (2 Sides), Standard Grade  
KLI−2113 Lot Number  
Serial Number  
KLI−2113−AAA−ER−AE  
KLI−2113−AAB−ED−AA  
KLI−2113−AAB−ED−AE  
KLI−2113−RAA−ED−AA  
KLI−2113−RAA−ED−AE  
KLI−2113−DAA−ED−AA*  
KLI−2113−DAA−ED−AE*  
Monochrome, No Microlens, CERDIP Package (Leadframe),  
Taped Clear Cover Glass with AR Coating (2 Sides), Engineering Sample  
Monochrome, No Microlens, CERDIP Package (Leadframe),  
Clear Cover Glass with AR Coating (Both Sides), Standard Grade  
KLI−2113 Lot Number  
Serial Number  
Monochrome, No Microlens, CERDIP Package (Leadframe),  
Clear Cover Glass with AR Coating (Both Sides), Engineering Sample  
Gen2 Color (RGB), No Microlens, CERDIP Package (Leadframe),  
Clear Cover Glass with AR Coating (Both Sides), Standard Grade  
KLI−2113 Lot Number  
Serial Number  
Gen2 Color (RGB), No Microlens, CERDIP Package (Leadframe),  
Clear Cover Glass with AR Coating (Both Sides), Engineering Sample  
Gen1 Color (RGB), No Microlens, CERDIP Package (Leadframe),  
Clear Cover Glass with AR Coating (Both Sides), Standard Grade  
KLI−2113 Lot Number  
Serial Number  
Gen1 Color (RGB), No Microlens, CERDIP Package (Leadframe),  
Clear Cover Glass with AR Coating (Both Sides), Engineering Sample  
*Not recommended for new designs.  
Table 3. ORDERING INFORMATION − EVALUATION SUPPORT  
Part Number  
Description  
KLI−2113−12−5−A−EVK  
Evaluation Board (Complete Kit)  
See the ON Semiconductor Device Nomenclature document (TND310/D) for a full description of the naming convention  
used for image sensors. For reference documentation, including information on evaluation kits, please visit our web site at  
www.onsemi.com.  
www.onsemi.com  
2
KLI−2113  
DEVICE DESCRIPTION  
LS  
LOGn  
Photodiode Array  
12 Test  
2098 Active Pixels  
12 Dark  
RD  
f R  
VDD  
TG2  
IG  
ID  
2 Blank  
4 Blank  
FD  
CCD Cells  
CCD Cells  
f2  
f1  
VIDn  
SUB  
f2s  
SUB  
Figure 2. Single Channel Schematic  
Exposure Control  
Pixel Summing  
Exposure control is implemented by selectively clocking  
the LOG gates during portions of the scanning line time. By  
applying a large enough positive bias to the LOG gate,  
the channel potential is increased to a level beyond the  
‘pinning level’ of the photodiode. (The ‘pinning’ level is the  
maximum channel potential that the photodiode can achieve  
and is fixed by the doping levels of the structure.) With TG1  
in an ‘off’ state and LOG strongly biased, all of the  
photocurrent will be drawn off to the LS drain. Referring to  
Figure 9, one notes that the exposure can be controlled by  
pulsing the LOG gate to a ‘high’ level while TG1 is turning  
‘off’ and then returning the LOG gate to a ‘low’ bias level  
The effective resolution of this sensor can be varied by  
enabling the pixel summing feature. A separate pin is  
provided for the last shift register gate labeled f2s. This  
gate, when clocked appropriately, stores the summation of  
signal from adjacent pixels. This combined charge packet is  
then transferred onto the sense node. As an example,  
the sensor can be operated in 2-pixel summing mode  
(1,049 pixels), by supplying a f2s clock which is a 75% duty  
cycle signal at 1/2 the frequency of the f2 signal, and  
modifying the fR clock as depicted in Figure 10.  
Applications that require full resolution mode  
(2,098 pixels), must tie the f2s pin to the f2 pin. Refer to  
Figure 9 and Figure 10 for additional details.  
sometime during the line scan. The effective exposure (t  
)
EXP  
is the net time between the falling edge of the LOG gate and  
the falling edge of the TG1 gate (end of the line). Separate  
LOG connections for each channel are provided, enabling  
on-chip light source and image spectral color balancing. As  
a cautionary note, the switching transients of the LOG gates  
during line readout may inject an artifact at the sensor  
output. Rising edge artifacts can be avoided by switching  
LOG during the photodiode-to-CCD transfer period,  
preferably, during the TG1 falling edge. Depending on  
clocking speeds, the falling edge of the LOG should be  
synchronous with the f1/f2 shift register readout clocks.  
For very fast applications, the falling edge of the LOG gate  
may be limited by on-chip RC delays across the array. In this  
case, artifacts may extend across one or more pixels.  
Correlated double sampling (CDS) processing of the output  
waveform can remove the first order magnitude of such  
artifacts. In high dynamic range applications, it may be  
advisable to limit the LOG fall times to minimize the current  
transients in the device substrate and limit the magnitude of  
the artifact to an acceptable level.  
Image Acquisition  
During the integration period, an image is obtained by  
gathering electrons generated by photons incident upon the  
photodiodes. The charge collected in the photodiode array  
is a linear function of the local exposure. The charge is stored  
in the photodiode itself and is isolated from the CCD shift  
registers during the integration period by the transfer gates  
TG1 and TG2, which are held at barrier potentials. At the  
end of the integration period, the CCD register clocking is  
stopped with the f1 and f2 gates being held in a ‘high’ and  
‘low’ state respectively. Next, the TG gates are turned ‘on’  
causing the charge to drain from the photo-diode into the  
TG1 storage region. As TG1 is turned back ‘off’, charge is  
transferred through TG2 and into the f1 storage region.  
The TG2 gate is then turned ‘off’, isolating the shift registers  
from the accumulation region once again. Complementary  
clocking of the f1 and f2 phases now resumes for readout  
of the current line of data while the next line of data is  
integrated.  
www.onsemi.com  
3
KLI−2113  
Charge Transport  
Readout of the signal charge is accomplished by  
two-phase, complementary clocking of the Phase 1 and  
Phase 2 gates (f1 and f2) in the horizontal (output) shift  
register. The register architecture has been designed for high  
speed clocking with minimal transport and output signal  
a parallel format at the falling edge of the f2s clock.  
Resettable floating diffusions are used for the charge to  
voltage conversion while source followers provide  
buffering to external connections. The potential change on  
the floating diffusion is dependent on the amount of signal  
degradation, while still maintaining low (4.75 V min)  
charge and is given by DV = DQ / C , where DV is the  
FD FD FD  
P−P  
clock swings for reduced power dissipation, lower clock  
noise and simpler driver design. The data in all registers is  
clocked simultaneously toward the output structures.  
The signal is then transferred to the output structures in  
change in potential on the floating diffusion, DQ is the  
amount of charge, and C is the capacitance of the floating  
FD  
diffusion node. Prior to each pixel output, the floating  
diffusion is returned to the RD level by the reset clock, fR.  
www.onsemi.com  
4
KLI−2113  
Physical Description  
Pin Description and Device Orientation  
VIDR  
1
2
3
28  
27  
26  
VIDG  
SUB  
VDD  
SUB  
RD  
fR  
LOGR  
LOGG  
SUB  
4
5
6
7
25  
24  
23  
22  
VIDB  
SUB  
N/C  
LOGB  
N/C  
8
21  
N/C  
LS  
IG  
9
20  
19  
18  
17  
16  
15  
N/C  
ID  
10  
11  
12  
13  
14  
TG2  
N/C  
f2s  
f2  
TG1  
N/C  
N/C  
f1  
Figure 3. KLI−2113 Pinout  
Table 4. PACKAGE PIN DESCRIPTION  
Pin  
1
Name  
VIDR  
SUB  
RD  
Description  
Red Output Video  
Pin  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
27  
28  
Name  
Description  
f1  
N/C  
Phase1 Shift Register Clock  
No Connection  
2
Substrate  
3
Reset Drain  
N/C  
No Connection  
4
fR  
Reset Clock  
TG1  
ID  
Inner Transfer Gate  
Input Diode Test Pin  
No Connection  
5
LOGR  
LOGG  
SUB  
N/C  
LS  
Red Overflow Gate  
Green Overflow Gate  
Substrate  
6
N/C  
7
N/C  
No Connection  
8
No Connection  
LOGB  
N/C  
Blue Overflow Gate  
No Connection  
9
Light Shield/Exposure Drain  
Input Gate/LOG Test Pin  
Outer Transfer Gate  
No Connection  
10  
11  
12  
13  
14  
IG  
SUB  
VIDB  
VDD  
SUB  
VIDG  
Substrate  
TG2  
N/C  
f2s  
Blue Output Video  
Amplifier Supply  
Substrate  
Phase2 Shift Register Summing Gate Clock  
Phase2 Shift Register Clock  
f2  
Green Output Video  
www.onsemi.com  
5
KLI−2113  
IMAGING PERFORMANCE  
Typical Operational Conditions  
Specifications given under nominal operating conditions @25°C ambient, f  
=2 MHz and nominal external VIDn load  
CLK  
resistors unless otherwise specified.  
Table 5. SPECIFICATIONS  
Verification  
Plan  
Description  
Saturation Output Voltage  
Output Sensitivity  
Symbol  
Min.  
Nom.  
2.0  
Max.  
Units  
Notes  
1, 7  
7
8
V
SAT  
V
P−P  
Die  
9
9
9
9
DV /DN  
11.5  
170k  
75  
mV/e  
Design  
Design  
Design  
Design  
O
e
Saturation Signal Charge  
Output Buffer Bandwidth  
Dynamic Range  
N
e
e,SAT  
f
MHz  
@ C  
= 10 pF  
−3dB  
LOAD  
DR  
76  
dB  
3
8
Dark Current  
I
0.02  
0.99999  
0.6  
pA/Pixel  
4
Die  
DARK  
9
9
9
9
9
Charge Transfer Efficiency  
Lag  
CTE  
%
V
5
Design  
Design  
Design  
Design  
Design  
st  
L
1
1
Field  
7
DC Output Offset  
V
6
7
9
ODC  
Register Clock Capacitance  
Transfer Gate Capacitance  
C
500  
400  
pF  
pF  
per Phase  
f
C
TG  
KLI−2113−RAA CONFIGURATION GEN2 COLOR  
2
9
Responsivity  
Red Channel  
Green Channel  
Blue Channel  
R
V/mJ/cm  
Design  
Design  
MAX  
62  
42  
37  
9
Peak Responsivity Wavelength  
Red Channel  
Green Channel  
lR  
nm  
650  
540  
460  
Blue Channel  
8
Photoresponse Uniformity  
PRNU  
7
14  
%p−p  
Die  
KLI−2113−DAA CONFIGURATION GEN1 COLOR (Note 10)  
2
9
9
Responsivity  
Red Channel  
Green Channel  
Blue Channel  
R
V/mJ/cm  
Design  
Design  
MAX  
60  
40  
36  
Peak Responsivity Wavelength  
Red Channel  
Green Channel  
lR  
nm  
650  
540  
460  
Blue Channel  
8
Photoresponse Uniformity  
PRNU  
5
10  
%p−p  
Die  
KLI−2113−AAA AND KLI−2113–AAB CONFIGURATION MONOCHROME  
2
9
9
Responsivity  
Monochrome, All Channels  
R
V/mJ/cm  
nm  
Design  
MAX  
66  
Peak Responsivity Wavelength  
Monochrome, All Channels  
lR  
Design  
675  
5
8
Photoresponse Uniformity  
PRNU  
10  
%p−p  
Die  
1. Defined as the maximum output level achievable before linearity or PRNU performance is degraded.  
2. With color filter. Values specified at filter peaks. 50% bandwidth = 30 nm.  
3. This device utilizes 2-phase clocking for cancellation of driver displacement currents. Symmetry between f1 and f2 phases must be  
maintained to minimize clock noise.  
4. Dark current doubles approximately every 9°C.  
5. Measured per transfer. For total line h < (0.99999)  
4256  
= 0.96  
6. Low frequency response across array with color filter array.  
7. Decreasing external VIDn load resistors to improve signal bandwidth will decrease these parameters.  
8. A parameter that is measured on every sensor during production testing.  
9. A parameter that is quantified during the design verification activity.  
10.Configuration KLI−2113−DAA uses Gen1 color filter set and is not recommended for new designs.  
www.onsemi.com  
6
 
KLI−2113  
TYPICAL PERFORMANCE CURVES  
(2 MHz Operation, Emitter Follower Buffered, 3/4 VSAT, Dark to Bright Transition)  
VIDR Output  
(1 V/DIV)  
f2 Clock  
(2 V/DIV)  
Time (200 ns/DIV)  
Figure 4. Output Waveforms  
70  
60  
50  
40  
30  
20  
10  
0
Wavelength (nm)  
Figure 5. Typical Responsivity  
www.onsemi.com  
7
KLI−2113  
DEFECT DEFINITIONS  
Table 6. OPERATING CONDITION SPECIFICATIONS  
(Test Conditions: T = 25°C, f  
= 2 MHz, t  
= 1.066 ms)  
CLK  
INT  
Field  
Dark  
Defect Type  
Bright  
Threshold  
Units  
mV  
%
Notes  
1, 2  
Number  
8.0  
10  
0
0
Bright  
Bright  
Bright/Dark  
Exposure Control  
1, 3  
4.0  
mV  
1, 4, 5  
16  
1. Defective pixels will be separated by at least one non-defective pixel within and across channels.  
2. Pixels whose response is greater than the average response by the specified threshold. See Figure 6 below.  
3. Pixels whose response is greater or less than the average response by the specified threshold. See Figure 6 below.  
4. Pixels whose response deviates from the average pixel response by the specified threshold when operating in exposure control mode. See  
Figure 6 below.  
5. Defect coordinates are available upon request.  
Note 3: Bright  
Field Bright Pixel  
Note 4: Bright Field  
Exposure Control  
Average  
Pixel  
Note 2: Dark  
Field Bright  
Pixel  
Bright Defect  
Average  
Pixel  
Note 5: Bright Field  
Field Exposure  
Control Dark  
Defect  
Note 3: Bright  
Field Dark Pixel  
Exposure  
Exposure  
Figure 6. Illustration of Defect Classifications  
www.onsemi.com  
8
 
KLI−2113  
OPERATION  
Table 7. ABSOLUTE MAXIMUM RATINGS  
Description  
Gate Pin Voltage  
Symbol  
Minimum  
Maximum  
Unit  
V
Notes  
1, 2  
1, 3  
1, 4  
5
V
GATE  
−0.5  
16  
16  
Pin-to-Pin Voltage  
V
V
PIN−PIN  
Diode Pin Voltage  
V
DIODE  
−0.5  
16  
V
Output Bias Current  
Output Load Capacitance  
CCD Clocking Frequency  
I
−10  
15  
mA  
pF  
MHz  
DD  
VID,LOAD  
C
f
C
20  
6
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. Referenced to substrate voltage.  
2. Includes pins: f1, f2, f2s, TG1, TG2, fR, IG, and LOGn.  
3. Voltage difference (either polarity) between any two pins.  
4. Includes pins: VIDn, RD, VDD, LS and ID.  
5. Care must be taken not to short output pins to ground during operation as this may cause serious damage to the output structures.  
6. Charge transfer efficiency will degrade at frequencies higher than the nominal (2 MHz) clocking frequency. VIDn load resistor values may  
need to be decreased as well to achieve required output bandwidths.  
Device Input ESD Protection Circuit (Schematic)  
To Device  
I/O Pin  
Function  
V − 20 V  
t
SUB  
CAUTION: To allow for maximum performance, this device contains limited I/O protection and may be sensitive to electrostatic induced  
damage. Devices should be installed in accordance with strict ESD handling procedures!  
Figure 7. ESD Protection Circuit  
www.onsemi.com  
9
 
KLI−2113  
DC Bias Operating Conditions  
Table 8. DC BIAS OPERATING CONDITIONS  
Description  
Symbol  
Minimum  
Nominal  
Maximum  
Units  
V
Notes  
Substrate  
V
SUB  
0
Reset Drain Bias  
V
11.5  
11.5  
11.5  
−4.0  
12.0  
12.0  
12.0  
−6.0  
12.0  
12.0  
12.5  
12.5  
12.5  
−8.0  
V
RD  
Output Buffer Supply  
V
DD  
V
Light Shield/Drain Bias  
Output Bias Current/Channel  
Test Pin − Input Gate/LOG  
Test Pin − Input Diode  
V
V
LS  
I
mA  
V
1
DDn  
V
V
IG  
V
ID  
1. A current sink must be supplied for each output. Load capacitance should be minimized so as not to limit bandwidth. See Figure 8.Choose  
values optimized for specific operating frequency, but R2 should not be less than 75 W.  
Typical Output Bias/Buffer Circuit  
V
DD  
0.1 mF  
2N2369  
or Similar*  
To Device  
Output Pin: VIDn  
(Minimize Path Length)  
Buffered Output  
R2 = 120 W*  
R1 = 600 W*  
Figure 8. Typical Output Bias/Buffer Circuit  
www.onsemi.com  
10  
 
KLI−2113  
AC Operating Conditions  
Table 9. CLOCK LEVELS  
Description  
Symbol  
, V , V  
f
Minimum  
Nominal  
Maximum  
Units  
Notes  
CCD Readout Clocks High  
CCD Readout Clocks Low  
Transfer Clocks High  
Transfer Clocks Low  
Reset Clock High  
V
4.75  
−0.1  
4.75  
−0.1  
4.75  
−0.1  
4.75  
−0.1  
5.0  
0.0  
5.0  
0.0  
5.0  
0.0  
5.0  
0.0  
5.25  
0.1  
V
V
V
V
V
V
V
V
f
f
1H  
2H  
2sH  
2sL  
V
, V , V  
f f  
2L  
f
1L  
V
, V  
, V  
5.25  
0.1  
TG1H  
TG2H  
TG2L  
V
TG1L  
V
f
5.25  
0.1  
RH  
Reset Clock Low  
V
f
RL  
Exposure Clocks High  
Exposure Clocks Low  
V
, V  
LOG2H  
, V  
LOG2L  
5.25  
0.1  
1
1
LOG1H  
V
LOG1L  
1. Tie pin to 0 V for applications where exposure control is not used.  
Table 10. AC TIMING LEVELS  
Description  
Symbol  
Minimum  
Nominal  
Maximum  
Units  
Notes  
-
CCD Element Duration  
Line/Integration Period  
PD−CCD Transfer Period  
Transfer Gate 1 Clear  
Transfer Gate 2 Clear  
LOGGate Duration  
1e (= 1/f  
)
50  
0.108  
1.0  
500  
500  
1
50  
ns  
ms  
ms  
ns  
ns  
ms  
ms  
ns  
ns  
ns  
ns  
CLK  
1L (= t  
)
1.066  
INT  
t
PD  
t
TG1  
TG2  
t
t
t
LOG1  
LOG2  
LOGGate Clear  
1
Reset Pulse Duration  
Clamp to f2 Delay  
t
9
RST  
t
5
1
1
CD  
Sample to Reset Edge Delay  
CCD Clock Rise Time  
t
5
SD  
t
R
30  
Typical  
1. Recommended delays for Correlated Double Sampling of output.  
www.onsemi.com  
11  
 
KLI−2113  
TIMING  
Line Timing  
4e 12e  
4e 12e  
2098e  
2098e  
12e 2e  
12e 2e  
4e 12e  
4e 12e  
2098e  
2098e  
12e 2e  
12e 2e  
f1  
f2  
TG1  
t
INT  
TG2  
t
t
LOG1  
LOG2  
LOGn  
t
EXP  
Photodiode-to-CCD Transfer Timing  
First Dark Reference  
Pixel Data Valid  
1e  
f1  
f2  
t
TG1  
TG2  
PD  
t
t
TG2  
TG1  
See Timing Notes  
LOGn  
Output Timing (Full Resolution Mode)  
1e  
f2s = f2  
V
FEEDTHRU  
V
DARK  
VIDn  
V
SAT  
t
RST  
t
t
SD  
CD  
fR  
Clamp*  
t
CLP  
Sample*  
t
SPL  
* Required for Correlated Double Sampling.  
Figure 9. Normal Mode Timing  
www.onsemi.com  
12  
KLI−2113  
Output Timing (2-Pixel Summing Mode)  
1e  
f2  
f2s  
fR  
VIDn  
V
Pixel N + Pixel (N+1)  
Clamp*  
Sample*  
* Required for Correlated Double Sampling.  
Figure 10. Binning Mode Timing  
www.onsemi.com  
13  
KLI−2113  
MECHANICAL INFORMATION  
Completed Assembly  
Figure 11. Completed Assembly Drawing (1 of 4)  
www.onsemi.com  
14  
KLI−2113  
Figure 12. Completed Assembly Drawing (2 of 4)  
www.onsemi.com  
15  
KLI−2113  
Figure 13. Completed Assembly Drawing (3 of 4)  
www.onsemi.com  
16  
KLI−2113  
Figure 14. Completed Assembly Drawing (4 of 4)  
www.onsemi.com  
17  
KLI−2113  
REFERENCES  
For information on ESD and cover glass care and  
cleanliness, please download the Image Sensor Handling  
and Best Practices Application Note (AN52561/D) from  
www.onsemi.com.  
For information on device numbering and ordering codes,  
please download the Device Nomenclature technical note  
(TND310/D) from www.onsemi.com.  
For information on Standard terms and Conditions of  
Sale, please download Terms and Conditions from  
www.onsemi.com.  
For information on soldering recommendations, please  
download the Soldering and Mounting Techniques  
Reference  
Manual  
(SOLDERRM/D)  
from  
www.onsemi.com.  
For quality and reliability information, please download  
the Quality & Reliability Handbook (HBD851/D) from  
www.onsemi.com.  
ON Semiconductor and the  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.  
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed  
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation  
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and  
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets  
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each  
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,  
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which  
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or  
unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim  
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
KLI−2113/D  

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