KSA928AOTA [ONSEMI]
PNP外延硅晶体管;
| 型号： | KSA928AOTA |
| 厂家： | 
ONSEMI |
| 描述： | PNP外延硅晶体管 放大器 晶体管 |
| 文件： | 总5页 (文件大小：296K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Epitaxial Silicon
Transistor
KSA928A
Features
• Audio Power Amplifier
• Complement to KSC2328A
• 3 W Output Application
www.onsemi.com
ABSOLUTE MAXIMUM RATINGS
(Values are at T = 25°C unless otherwise noted.) (Notes 1, 2)
A
Symbol
Parameter
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current
Value
−30
Unit
V
V
CBO
V
CEO
V
EBO
TO−92 3 LF
CASE 135AM
−30
V
−5
V
MARKING DIAGRAM
I
C
−2
A
T
Junction Temperature
Storage Temperature
150
°C
°C
J
T
−55 to +150
STG
AA9
28AX
YWW
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady−state limits. ON Semiconductor should be consulted on
applications involving pulsed or low−duty−cycle operations.
1: Emitter
2: Collector
3: Base
THERMAL CHARACTERISTICS
1
2
3
(Values are at T = 25°C unless otherwise noted.) (Note 3)
A
A
= Assembly Code
= Device Code
= O / Y
Symbol
Parameter
Power Dissipation
Value
1000
8.0
Unit
mW
A928A
X
YWW
P
D
= Date Code
Derate Above 25_C
mW/°C
°C/W
R
Thermal Resistance,
125
θ
JA
Junction−to−Ambient
ORDERING INFORMATION
3. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch)
with minimum land pattern size.
Device
Package
Shipping
KSA928AOTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
KSA928AYTA
TO−92 3 LF
(Pb−Free)
2000 /
Fan−Fold
© Semiconductor Components Industries, LLC, 2002
1
Publication Order Number:
March, 2021 − Rev. 2
KSA928A/D
KSA928A
ELECTRICAL CHARACTERISTICS
(Values are at T = 25°C unless otherwise noted.)
A
Symbol
Parameter
Conditions
= −100 mA, I = 0
Min.
−30
−30
−5
−
Typ.
−
Max.
−
Unit
V
BV
BV
BV
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cut−Off Current
I
I
CBO
CEO
EBO
C
E
= −10 mA, I = 0
−
−
V
C
B
I = −1 mA, I = 0
−
−
V
E
C
I
V
= −30 V, I = 0
−
−100
−100
320
−1.0
−2.0
−
nA
nA
CBO
CB
EB
CE
CE
E
I
Emitter Cut−Off Current
V
V
V
= −5 V, I = 0
−
−
EBO
C
h
FE
DC Current Gain
= −2 V, I = −500 mA
100
−
−
C
V
BE
(on)
Base−Emitter On Voltage
= −2 V, I = −500 mA
−
V
V
C
V
CE
(sat)
Collector−Emitter Saturation Voltage
Current Gain Bandwidth Product
Collector Output Capacitance
I
C
= −1.5 A, I = −30 mA
−
−
B
f
T
V
V
= −2 V, I = −500 mA
−
120
48
MHz
pF
CE
CB
C
C
= −10 V, I = 0, f = 1 MHz
−
−
ob
E
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
hFE CLASSIFICATION
Classification
O
Y
h
FE
100 ~ 200
160 ~ 320
www.onsemi.com
2
KSA928A
TYPICAL PERFORMANCE CHARACTERISTICS
−1400
−1200
−1000
−800
−600
−400
−200
0
1000
I
= −7 mA
B
V
= −2 V
CE
I
B
I
B
I
B
= −6 mA
= −5 mA
= −4 mA
100
10
I
B
I
B
I
B
= −3 mA
= −2 mA
= −1 mA
0
−2
−4
−6
−8
−10 −12
−14
−16
−1
−10
−100
−1000
−5000
V
CE
, Collector−Emitter Voltage (V)
I , Collector Current (mA)
C
Figure 1. Static Characteristic
Figure 2. DC Current Gain
−1400
−1200
−1000
−800
−600
−400
−200
0
T = 125°C
A
I
C
= 50 I
V
= −2 V
−1
B
CE
T = 25°C
A
−0.1
T = −40°C
A
−0.01
0.0
−0.2
−0.4
V , Base−Emitter Voltage (V)
BE
−0.6
−0.8
−1.0
−1.2
−1.4
−1
−10
−100
−1000
−10000
I , Collector Current (mA)
C
Figure 3. Collector−Emitter Saturation Voltage
Figure 4. Base−Emitter On Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−10
I
I
(Max) Pulse
(Max)
C
1 ms
1 s
C
−1
−0.1
DC Operating
= 25°C
T
C
V
(Max)
CEO
−0.01
0
25
50
75
100
125
150
175
−0.1
−1
−10
−100
T , Ambient Temperature (5C)
A
V
CE
, Collector−Emitter Voltage (V)
Figure 5. Safe Operating Area
Figure 6. Power Derating
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−92 3 8.0x4.9 (LEADFORMED)
CASE 135AM
ISSUE B
DATE 14 JAN 2021
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14058G
TO−92 3 8.0X4.9 (LEADFORMED)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
onsemi Website: www.onsemi.com
ONLINE SUPPORT: www.onsemi.com/support
For additional information, please contact your local Sales Representative at
www.onsemi.com/support/sales
相关型号：
KSA928AYBU
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
FAIRCHILD
KSA928AYTA_NL
Small Signal Bipolar Transistor, 2A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
FAIRCHILD
KSA931OBU
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
FAIRCHILD
KSA931Y
Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92L, 3 PIN
FAIRCHILD
©2020 ICPDF网 联系我们和版权申明