KSC2334Y [ONSEMI]

NPN外延硅晶体管;
KSC2334Y
型号: KSC2334Y
厂家: ONSEMI    ONSEMI
描述:

NPN外延硅晶体管

局域网 开关 晶体管
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KSC2334  
High Speed Switching Industrial Use  
Complement to KSA1010  
TO-220  
1.Base 2.Collector 3.Emitter  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
Units  
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
*Collector Current (Pulse)  
Base Current (DC)  
150  
V
V
CBO  
CEO  
EBO  
100  
7
V
I
7
15  
A
C
I
I
A
CP  
B
3.5  
A
P
Collector Dissipation (T =25°C)  
40  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.5  
A
T
T
Junction Temperature  
150  
J
Storage Temperature  
- 55 ~ 150  
STG  
* PW300µs, Duty Cycle10%  
Electrical Characteristics TC=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
100  
100  
Max.  
Units  
V
(sus)  
Collector-Emitter Sustaining Voltage  
Collector-Emitter Sustaining Voltage  
I
I
= 5A, I = 0.5A, L = 1mH  
V
V
CEO  
C
C
B1  
V
(sus)1  
= 5A, I = -I = 0.5A  
B1 B2  
CEX  
V
(off) = -5V, L = 180µH, Clamped  
BE  
V
(sus)2  
Collector-Emitter Sustaining Voltage  
I
= 10A, I =1A, I = -0.5A,  
100  
V
CEX  
C
B1  
B2  
V
V
V
(off) = -5V, L = 180µH, Clamped  
BE  
CB  
CE  
I
Collector Cut-off Current  
Collector Cut-off Current  
Collector Cut-off Current  
= 100, I = 0  
10  
1
µA  
CBO  
E
I
= 100V, R = 51@T =125°C  
mA  
CER  
BE  
C
I
I
V
V
= 100V, V (off) = -1.5V  
10  
1
µA  
mA  
CEX1  
CEX2  
CE  
CE  
BE  
= 100V, V (off) = -1.5V  
BE  
@ T = 125°C  
C
I
Emitter Cut-off Current  
* DC Current Gain  
V
= 5V, I = 0  
10  
µA  
EBO  
EB  
C
h
h
h
V
V
V
= 5V, I = 0.5A  
40  
40  
20  
FE1  
FE2  
CE  
CE  
CE  
C
= 5V, I = 3A  
240  
C
= 5V, I = 5A  
FE3  
C
V
V
(sat)  
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter Saturation Voltage  
Turn On Time  
I
I
= 5A, I = 0.5A  
0.6  
1.5  
0.5  
0.5  
1.5  
V
V
CE  
BE  
C
C
B
= 5A, I = 0.5A  
B
t
t
t
V
I
= 50V, I = 5A  
µs  
µs  
µs  
ON  
CC  
C
= -I = 0.5A  
Storage Time  
B1  
B2  
STG  
F
R = 10Ω  
L
Fall Time  
* Pulse Test: PW350µs, Duty Cycle2%Pulsed  
h
Classification  
FE  
Classification  
R
O
Y
h
40 ~ 80  
70 ~ 140  
120 ~ 240  
FE2  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, August 2001  
Typical Characteristics  
5
1000  
100  
10  
IB = 90mA  
VCE = 5V  
IB = 70mA  
IB = 80mA  
4
3
2
1
0
IB = 60mA  
IB = 50mA  
IB = 40mA  
IB = 30mA  
IB = 20mA  
IB = 10mA  
1
0.01  
0
1
2
3
4
5
0.1  
1
10  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
IC[A], COLLECTOR CURRENT  
Figure 1. Static Characteristic  
Figure 2. DC current Gain  
10  
100  
10  
IC/IB = 10  
IC MAX. (Pulse)  
VBE(sat)  
1
1
0.1  
VCE(sat)  
0.1  
0.01  
0.01  
0.01  
0.1  
1
10  
1
10  
100  
1000  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 3. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
Figure 4. Safe Operating Area  
160  
140  
120  
100  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
80  
S/b Limited  
60  
Dissipation Limited  
40  
20  
0
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
225  
250  
TC[oC], CASE TEMPERATURE  
TC[oC], CASE TEMPERATURE  
Figure 5. Derating Curve of Safe Operating Areas  
Figure 6. Power Derating  
©2001 Fairchild Semiconductor Corporation  
Rev. A1, August 2001  
SUPPLIER "B" PACKAGE  
SHAPE  
‘ꢀꢁꢂꢂ  
3.50  
10.67  
9.65  
SUPPLIER "A" PACKAGE  
SHAPE  
E
3.40  
2.50  
16.30  
13.90  
IF PRESENT, SEE NOTE "D"  
E
16.51  
15.42  
9.40  
8.13  
E
1
2
3
4.10  
2.70  
[2.46]  
C
14.04  
12.70  
2.13  
2.06  
FRONT VIEWS  
H
4.70  
4.00  
1.62  
1.42  
1.62  
1.10  
2.67  
2.40  
"A1"  
8.65  
7.59  
1.00  
0.55  
SEE NOTE "F"  
ꢃƒ  
ꢄƒ  
ꢃƒ  
ꢄƒ  
6.69  
6.06  
OPTIONAL  
CHAMFER  
E
14.30  
11.50  
NOTE "I"  
BOTTOM VIEW  
NOTES:  
A) REFERENCE JEDEC, TO-220, VARIATION AB  
B) ALL DIMENSIONS ARE IN MILLIMETERS.  
C) DIMENSIONS COMMON TO ALL PACKAGE  
SUPPLIERS EXCEPT WHERE NOTED [ ].  
D) LOCATION OF MOLDED FEATURE MAY VARY  
(LOWER LEFT CORNER, LOWER CENTER  
AND CENTER OF THE PACKAGE)  
3
2
1
E DOES NOT COMPLY JEDEC STANDARD VALUE.  
F) "A1" DIMENSIONS AS BELOW:  
SINGLE GAUGE = 0.51 - 0.61  
DUAL GAUGE = 1.10 - 1.45  
G) DRAWING FILE NAME: TO220B03REV9  
H
PRESENCE IS SUPPLIER DEPENDENT  
I) SUPPLIER DEPENDENT MOLD LOCKING HOLES  
IN HEATSINK.  
0.60  
0.36  
2.85  
2.10  
BACK VIEW  
SIDE VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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