KSC5021RTU [ONSEMI]
NPN Silicon Transistor;
| 型号： | KSC5021RTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN Silicon Transistor |
| 文件： | 总9页 (文件大小：420K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
October 2008
KSC5021
NPN Silicon Transistor
•
•
•
High Voltage and High Reliability
High Speed Switching : tF = 0.1ms (Typ.)
Wide SOA
TO-220
1
1.Base 2.Collector 3.Emitter
Absolute Maximum Ratings
T
= 25°C unless otherwise noted
C
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
Collector-Base Voltage
800
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
500
7
V
5
A
ICP
10
A
IB
2
50
A
PC
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
W
°C
°C
TJ
150
TSTG
- 55 ~ 150
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
1
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
BVCBO
Parameter
Conditions
Min.
800
500
7
Typ.
Max Units
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
IC = 1mA, IE = 0
V
V
V
V
BVCEO
IC = 5mA, IB = 0
IE = 1mA, IC = 0
BVEBO
VCEX(sus)
IC = 2.5A, IB1 = -IB2 = 1A
L = 1mH, Clamped
500
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCB = 500V, IE = 0
VEB = 5V, IC = 0
10
10
50
mA
mA
hFE1
hFE2
VCE = 5V, IC = 0.6A
VCE = 5V, IC = 3A
15
8
VCE(sat)
VBE(sat)
Cob
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
IC = 3A, IB = 0.6A
1
V
V
IC = 3A, IB = 0.6A
1.5
VCB = 10V, IE = 0, f=1MHz
VCE = 10V, IC = 0.6A
80
18
pF
MHz
ms
fT
Current Gain Bandwidth Product
Turn On Time
tON
VCC = 200V
IC = 5IB1 = -2.5IB2 = 4A
RL = 50W
0.5
3
tSTG
tF
Storage Time
ms
Fall Time
0.3
ms
* Pulse Test: PW £ 300ms, Duty Cycle £ 2%
h
Classification
FE
Classification
hFE1
R
O
Y
15 ~ 30
20 ~ 40
30 ~ 50
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
2
Typical Performance Characteristics
Figure 1. Static Characteristic
Figure 2. DC Current Gain (R-Grade)
100
5.0
4.5
VCE = 5V
Ta = 75 O
C
4.0
Ta = 125 O
C
IB = 300mA
3.5
3.0
2.5
Ta = - 25 O
C
Ta = 25 O
C
10
IB = 100mA
2.0
1.5
IB = 50mA
1.0
0.5
0.0
1
0.01
0.1
1
10
0
1
2
3
4
5
6
7
8
9
10
IC [A], COLLECTOR CUTRRENT
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 3. DC Current Gain (O-Grade)
Figure 4. Saturation Voltage (R-Grade)
10
100
IC = 4 IB
VCE = 5V
Ta = 75 O
C
Ta = 125 O
C
Ta = 125 O
C
1
Ta = - 25 O
C
Ta = 25 O
C
Ta = 75 O
C
10
Ta = - 25 O
Ta = 25 O
C
0.1
C
0.01
0.01
1
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CUTRRENT
Figure 5. Saturatin Voltage (O-Grade)
Figure 6. Saturation Voltage (R-Grade)
10
10
IC = 4 IB
IC = 4 IB
Ta = 125 O
C
Ta = 25 O
C
Ta = - 25 O
C
1
1
Ta = 125 O
C
Ta = 75 O
C
Ta = 75 O
C
Ta = - 25 O
Ta = 25 O
C
0.1
0.1
C
0.01
0.01
0.01
0.01
0.1
1
10
0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
3
Typical Characteristics
1000
100
10
5
IB = 600mA
IB = 800mA
VCE = 5V
IB = 400mA
4
3
2
1
0
IB = 1A
IB = 1.2A
IB = 200mA
IB = 100mA
IB = 50mA
IB = 20mA
IB = 0
1
0.01
0.1
1
10
0
2
4
6
8
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
6
5
4
3
2
1
0
10
IC = 5 IB
VCE = 5V
VBE(sat)
1
0.1
VCE(sat)
0.01
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
100
10
10
tSTG
50ms
ICP(max)
IC(max)
1
1
tF
tON
0.1
0.1
0.01
0.01
0.1
1
10
100
1000
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
4
Typical Characteristics (Continued)
80
70
60
50
40
30
20
10
0
100
IB2 = -1A
L = 200mH
10
1
0.1
0.01
10
0
25
50
75
100
125
150
175
100
1000
10000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
www.fairchildsemi.com
5
Package Dimension
Dimensions in Millimeters
www.fairchildsemi.com
© 2007 Fairchild Semiconductor Corporation
KSC5021 Rev. 1.0.0
6
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Advance Information
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This datasheet contains preliminary data; supplementary data will be pub-
lished at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
Preliminary
First Production
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This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
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Obsolete
This datasheet contains specifications on a product that has been discontin-
ued by Fairchild semiconductor. The datasheet is printed for reference infor-
mation only.
Rev. I31
© 2008 Fairchild Semiconductor Corporation
KSC5021 Rev. A1
www.fairchildsemi.com
7
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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