KSC5026MOS [ONSEMI]
NPN芯片晶体管;
| 型号： | KSC5026MOS |
| 厂家： | 
ONSEMI |
| 描述： | NPN芯片晶体管 局域网 开关 晶体管 |
| 文件： | 总7页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
January 2011
KSC5026M
NPN Silicon Transistor
Features
• High Voltage and High Reliability
• High Speed Switching
• Wide SOA
TO-126
1. Emitter 2.Collector 3.Base
1
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Value
Units
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Collector-Base Voltage
1100
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
800
7
V
1.5
A
ICP
5
0.8
A
IB
A
PC
Collector Dissipation (TC=25°C)
Junction Temperature
Storage Temperature
20
W
°C
°C
TJ
150
TSTG
- 55 to 150
Package Marking and Ordering Information
Package
Packing Method
Remarks
Part Number
Marking
KSC5026MOS*
C5026M-O
TO-126
BULK
* The suffix "M" & "S" of FSID denotes TO126 package and the suffix "O" of FSID denotes hFE-class
© 2011 Fairchild Semiconductor Corporation
www.fairchildsemi.com
KSC5026M Rev. B3
1
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
Parameter
Test Condition
Min.
1100
800
7
Typ.
Max. Units
Collector-Base Breakdown Voltage
IC = 1mA, IE = 0
V
V
V
V
Collector-Emitter Breakdown Voltage IC = 5mA, IB = 0
Emitter-Base Breakdown Voltage IE = 1mA, IC = 0
Collector-Emitter Sustaining Voltage IC = 0.75A,
VCEX(sus)
800
I
B1 = -IB2 = 0.15A,
L = 5mH, Clamped
ICBO
IEBO
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
VCB = 800V, IE = 0
VEB = 5V, IC = 0
10
10
40
μA
μA
hFE1
hFE2
VCE = 5V, IC = 0.1A
VCE = 5V, IC = 0.5A
10
8
V
CE(sat)
VBE(sat)
Cob
Collector-Emitter Saturation Voltage IC = 0.75A, IB = 0.15A
2
V
V
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
IC = 0.75A, IB = 0.15A
VCB = 10V, IE = 0, f = 1MHz
VCE = 10V, IC = 0.1A
1.5
35
15
pF
MHz
μs
fT
tON
VCC = 400V
0.5
3
IC = 5IB1 = -2.5IB2 = 1A
RL = 400Ω
tSTG
tF
Storage Time
μs
Fall Time
0.3
μs
h
Classification
FE
Classification
hFE1
N
R
O
10 ~ 20
15 ~ 30
20 ~ 40
© 2011 Fairchild Semiconductor Corporation
KSC5026M Rev. B3
www.fairchildsemi.com
2
Typical Performance Characteristics
2.0
1.8
1.6
1.4
1.2
1000
100
10
VCE = 5V
IB = 120mA
1.0
I
= 100mA
IBB = 80mA
IB = 60mA
IB = 40mA
0.8
0.6
0.4
0.2
0.0
IB = 20mA
IB = 10mA
IB = 5mA
IB = 0
1
0.01
0
1
2
3
4
5
6
7
8
9
10
0.1
1
10
100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
10
VCE = 5V
IC = 5 IB
VBE(sat)
1
VCE(sat)
0.1
0.01
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1
10
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10
10
1
IC(max).(Pulse)
IC(max)
tSTG
1
tON
tF
0.1
0.1
0.01
1E-3
0.01
0.1
1
10
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Switching Time
Figure 6. Safe Operating Area
© 2011 Fairchild Semiconductor Corporation
KSC5026M Rev. B3
www.fairchildsemi.com
3
Typical Performance Characteristics
(Continued)
100
30
IB2 = -0.15A
10
1
20
10
0.1
0.01
0
0
10
100
1000
10000
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
© 2011 Fairchild Semiconductor Corporation
KSC5026M Rev. B3
www.fairchildsemi.com
4
8.30
7.70
3.45
3.05
4.00
3.80
11.20
10.80
14.20 MAX
3.20
1.35
1.95
1.55
1.70
1.50
1.00
E
D
0.85
3X
0.65
#1
0.60
0.45
M
3X
0.254
2.29
TOP VIEW
3°
SIDE VIEW
PRODUCTION
CODE
TERMINAL
LENGTH "D"
TERMINAL
LENGTH "E"
TSSTU
TSTU
NONE
(STD LENGTH)
3.45 - 4.05
2.36 - 2.96
6.45-7.45
5.36-6.36
FRONT VIEW
12.76 - 13.36
15.76-16.76
NOTES:
A. NO INDUSTRY STANDARD APPLIES TO THIS
PACKAGE
B. ALL DIMENSIONS ARE IN MILLIMETERS
C. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD
FLASH, AND TIE BAR PROTRUSIONS
D
FOR TERMINAL LENGTH "D", REFER TO TABLE
FOR TERMINAL LENGTH "E", REFER TO TABLE
E
F. DRAWING FILENAME: MKT-TO126AArev2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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