KSC5305DFTTU [ONSEMI]
NPN芯片晶体管;
| 型号： | KSC5305DFTTU |
| 厂家： | 
ONSEMI |
| 描述： | NPN芯片晶体管 晶体管 |
| 文件： | 总8页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
September 2009
KSC5305DF
NPN Silicon Transistor
Equivalent Circuit
C
Features
• High Voltage High Speed Power Switch
B
TO-220F
1.Base 2.Collector 3.Emitter
Application
1
E
• Built-in Free-wheeling Diode makes efficient anti saturation operation
• Suitable for half bridge light ballast Applications
• No need to interest an hFE value because of low variable storage-time spread even though corner spirit product
• Low base drive requirement
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
Units
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current (DC)
800
400
V
12
V
5
A
ICP
*Collector Current (Pulse)
Base Current (DC)
10
A
IB
2
A
IBP
*Base Current (Pulse)
Power Dissipation (TC=25°C)
Junction Temperature
4
40
A
PC
W
°C
°C
TJ
150
TSTG
Storage Temperature range
-65 to +150
Thermal Characteristics
Symbol
Parameter
Rating
3.125
69.5
Units
°C/W
°C/W
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
www.fairchildsemi.com
1
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Parameter
Test Condition
Min.
800
400
12
Typ.
Max.
Units
V
Collector-Base Breakdown Voltage
IC=1mA, IE=0
-
-
-
-
-
-
-
Collector-Emitter Breakdown Voltage IC=5mA, IB=0
V
Emitter Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
IE=1mA, IC=0
-
V
VCB=500V, IE=0
VEB = 9V, IC = 0
VCE=1V, IC=0.8A
-
10
10
μA
μA
IEBO
-
hFE1
hFE2
22
8
-
-
-
-
V
CE=1V,IC=2A
V
CE(sat) Collector-Emitter Saturation Voltage IC=0.8A, IB=0.08A
-
-
-
-
0.4
0.5
V
V
IC=2A, IB=0.4A
VBE(sat) Base-Emitter Saturation Voltage
IC=0.8A, IB=0.08A
IC=2A, IB=0.4A
-
-
-
-
1.0
1.0
V
V
Cob
tON
tSTG
tF
Output Capacitance
Turn On Time
Storage Time
Fall Time
VCB = 10V, f=1MHz
-
-
-
-
-
-
-
-
-
-
-
-
75
150
2
pF
ns
μs
μs
μs
ns
VCC=300V, IC =2A
IB1 = 0.4A, IB2=-1A
RL = 150Ω
0.2
2.25
150
tSTG
tF
Storage Time
Fall Time
VCC=15V,VZ=300V
IC = 2A,IB1 = 0.4A
IB2 = -0.4A, LC=200μH
VF
trr
Diode Forward Voltage
IF = 1A
IF = 2A
-
-
-
-
1.5
1.6
V
V
* Reverse recovery time
(di/dt = 10A/μs)
IF = 0.4A
IF = 1A
IF = 2A
-
-
-
800
1.4
1.9
-
-
-
ns
μs
μs
* Pulse Test : Pulse Width=5mS, Duty cycles ≤ 10%
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
www.fairchildsemi.com
2
Typical Performance Characteristics
5
100
10
1
I
= 500mA
B IB = 450mA
IB = 400mA
VCE = 1V
Ta = 125oC
I
= 350mA
BIB = 300mA
IB = 250mA
IB = 200mA
4
3
2
1
0
25oC
-25oC
IB = 150mA
IB = 100mA
IB = 50mA
IB = 0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
100
10
1
IC = 10 IB
VCE = 5V
Ta = 125oC
25oC
-20oC
1
VBE(sat)
VCE(sat)
0.1
0.01
0.01
0.1
1
10
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. DC current Gain
Figure 4. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
10
IC = 5IB
25oC
IC = 5IB
1
Ta = 125oC
-20oC
1
-20oC
25oC
Ta = 125oC
0.1
0.01
0.01
0.1
0.01
0.1
1
10
0.1
1
10
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 5. Collector-Emitter Saturation Voltage
Figure 6. Base-Emitter Saturation Voltage
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
www.fairchildsemi.com
3
Typical Performance Characteristics
1000
100
10
10
f = 1MHz
VCC = 300V
IC = 5IB1 = -2.5IB2
tSTG
1
tF
0.1
1
0.01
0.1
1
10
100
1
10
VCB[V], COLLECTOR-BASE VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 7. Switching Time
Figure 8. Collector Output Capacitance
1.6
10
1.4
1.2
1.0
0.8
1
0.1
0.01
1.0
1.5
2.0
0.1
1
10
If[A], FORWARD CURRENT
IF[A], FORWARD DIODE CURRENT
Figure 9. Reverse Recovery Time
Figure 10. Forward Diode Voltage
100
60
50
40
30
20
10
0
10
1
1μs
10μs
1ms
DC
5ms
0.1
0.01
10
0
25
50
75
100
125
150
175
100
1000
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 11. Safe Operating Area
Figure 12. Power Derating
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
www.fairchildsemi.com
4
Physical Dimension
TO-220F
2.54 0.20
(0.70)
10.16 0.20
(7.00)
ø3.18 0.10
(1.00x45°)
MAX1.47
0.80 0.10
(30
°
)
#1
0.35 0.10
2.54TYP
+0.10
–0.05
0.50
2.76 0.20
2.54TYP
[2.54 0.20
]
[2.54 0.20]
9.40 0.20
Dimensions in Millimeters
© 2009 Fairchild Semiconductor Corporation
KSC5305DF Rev. A3
www.fairchildsemi.com
5
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
PowerTrench®
PowerXS™
Programmable Active Droop¥
QFET®
QS¥
The Power Franchise®
AccuPower¥
Auto-SPM¥
Build it Now¥
CorePLUS¥
CorePOWER¥
CROSSVOLT¥
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
FPS¥
F-PFS¥
FRFET®
Global Power ResourceSM
Green FPS¥
Green FPS¥ e-Series¥
Gmax™
TinyBoost¥
TinyBuck¥
Quiet Series¥
RapidConfigure¥
TinyCalc¥
TinyLogic®
GTO¥
IntelliMAX¥
ISOPLANAR¥
MegaBuck™
MICROCOUPLER¥
MicroFET¥
TINYOPTO¥
TinyPower¥
TinyPWM¥
TinyWire¥
TriFault Detect¥
TRUECURRENT¥*
PSerDes¥
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START¥
SPM®
®
MicroPak¥
STEALTH™
SuperFET¥
SuperSOT¥-3
SuperSOT¥-6
SuperSOT¥-8
SupreMOS™
SyncFET™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
UHC®
Ultra FRFET¥
UniFET¥
VCX¥
VisualMax¥
XS™
OPTOPLANAR®
FAST®
®
FastvCore¥
Sync-Lock™
®
FETBench¥
PDP SPM™
Power-SPM¥
*
FlashWriter®
*
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Definition of Terms
Datasheet Identification Product Status
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Advance Information
Preliminary
Formative / In Design
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
First Production
Full Production
Not In Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
No Identification Needed
Obsolete
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I41
© 2008 Fairchild Semiconductor Corporation
www.fairchildsemi.com
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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