KSC5321 [ROCHESTER]
5A, 500V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN;
| 型号： | KSC5321 |
| 厂家： | 
Rochester Electronics |
| 描述： | 5A, 500V, NPN, Si, POWER TRANSISTOR, TO-220, TO-220, 3 PIN 局域网 开关 晶体管 |
| 文件： | 总9页 (文件大小：744K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSC5321
High Voltage and High Reliability
•
•
High speed Switching
Wide Safe Operating Area
TO-220
1.Base 2.Collector 3.Emitter
1
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
C
Symbol
Parameter
Value
Units
V
V
V
V
Collector-Base Voltage
800
CBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current (DC)
500
V
CEO
EBO
7
V
I
I
I
I
5
A
C
10
A
CP
B
2
4
A
*Base Current (Pulse)
A
BP
P
Power Dissipation(T =25°C)
100
W
°C
°C
C
C
T
T
Junction Temperature
Storage Temperature
150
J
- 55 ~ 150
STG
* Pulse Test: Pulse Width = 5ms, Duty Cycle≤10%
Thermal Characteristics T =25°C unless otherwise noted
C
Symbol
Characteristics
Junction to Case
Junction to Ambient
Rating
1.25
Unit
R
R
Thermal Resistance
°C/W
θjc
θja
62.5
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Electrical Characteristics T =25°C unless otherwise noted
C
Symbol
Parameter
Test Condition
Min.
800
500
7
Typ.
Max.
Units
V
BV
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
I
I
I
= 1mA, I = 0
-
-
-
-
-
-
CBO
CEO
EBO
C
C
C
E
BV
BV
= 5mA, I = 0
-
V
B
=1mA, I = 0
-
V
C
I
I
V
V
= 800V, I = 0
-
100
10
µA
µA
CBO
EBO
CB
EB
E
Emitter Cut-off Current
= 7V, I = 0
-
C
h
h
DC Current Gain
V
V
= 5V, I = 0.6A
15
8
-
-
40
-
FE1
FE2
CE
CE
C
= 5V, I = 3A
C
V
V
(sat)
(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain bandwidth Product
Output Capacitance
Input Capacitance
Turn ON Time
I
I
= 3A, I = 0.6A
-
-
-
-
-
-
-
1.0
1.5
-
V
V
CE
BE
C
C
B
= 3A, I = 0.6A
-
B
f
V
V
V
= 10V, I = 0.6A
14
MHz
pF
pF
µs
µs
µs
µs
µs
µs
T
CE
CB
EB
C
C
C
= 10V, I = 0, f = 1MHz
65
100
2000
0.5
6.5
0.3
0.5
3.0
0.3
ob
ib
E
= 7V, I = 0, f = 1MHz
1400
C
t
t
t
t
t
t
V
= 125V, I = 1A
-
-
-
-
-
-
ON
CC
C
I
= -I = 0.2A
Storage Time
B1
B2
STG
F
R = 125Ω
L
Fall Time
-
-
-
-
Turn ON Time
V
= 250V, I = 4A
CC C
ON
STG
F
I
= 0.8A, I = -1.6A
Storage Time
B1
B2
R = 62.5Ω
L
Fall Time
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics
100
10
1
5
4
3
2
1
0
VCE = 5V
0
2
4
6
8
10
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
1000
100
10
IC = 5 IB
f = 1MHz
IE = 0
1
VBE(sat)
0.1
VCE(sat)
0.01
0.01
1
0.1
1
10
1
10
100
1000
IC[A], COLLECTOR CURRENT
VCB[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
10
10
Pulse
50µs
tSTG
1
1
tON
0.1
tF
0.1
0.01
0.01
0.1
1
10
100
1000
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 5. Switching Time
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Typical Characteristics (Continued)
100
120
100
80
60
40
20
0
IB2 = -1A
L = 200µH
10
1
0.1
0.01
10
100
1000
10000
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
Package Demensions
TO-220
4.50 ±0.20
9.90 ±0.20
(8.70)
+0.10
1.30
–0.05
ø3.60 ±0.10
(45
°
)
1.27 ±0.10
1.52 ±0.10
0.80 ±0.10
+0.10
–0.05
0.50
2.40 ±0.20
2.54TYP
2.54TYP
[2.54 ±0.20
]
[2.54 ±0.20]
10.00 ±0.20
Dimensions in Millimeters
©2000 Fairchild Semiconductor International
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
HiSeC™
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
Bottomless™
CoolFET™
CROSSVOLT™
E2CMOS™
FACT™
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench®
QFET™
VCX™
FACT Quiet Series™
QS™
FAST®
Quiet Series™
SuperSOT™-3
SuperSOT™-6
FASTr™
GTO™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In
Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2000 Fairchild Semiconductor International
Rev. E
Product Folder - Fairchild P/N KSC5321 - NPN Triple Diffused Planar Silicon Transistor
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Wide Safe Operating Area
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Product status/pricing/packaging
company
Product
KSC5321ATU
KSC5321TU
KSC5321
Product status
Full Production
Full Production
Full Production
Pricing*
Package type
TO-220
Leads
Packing method
RAIL
N/A
$0.62
$0.62
3
3
3
TO-220
RAIL
TO-220
BULK
* 1,000 piece Budgetary Pricing
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Models
Package & leads
PSPICE
Condition
Temperature range Software version Revision date
Electrical/Thermal
TO-220-3
-25°C to 100°C
9.2
Mar 16, 2001
Product Folder - Fairchild P/N KSC5321 - NPN Triple Diffused Planar Silicon Transistor
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