KSH42CTM [ONSEMI]

PNP外延硅晶体管;
KSH42CTM
型号: KSH42CTM
厂家: ONSEMI    ONSEMI
描述:

PNP外延硅晶体管

放大器 晶体管
文件: 总7页 (文件大小:218K)
中文:  中文翻译
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KSH42C  
General Purpose Amplifier  
Low Speed Switching Applications  
Lead Formed for Surface Mount Application (No Suffix)  
Straight Lead (I-PAK, “- I” Suffix)  
Electrically Similar to Popular TIP42C  
D-PAK  
I-PAK  
1
1
1.Base 2.Collector 3.Emitter  
PNP Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
C
Symbol  
Parameter  
Value  
-100  
-100  
-5  
Units  
V
V
V
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
Base Current  
CBO  
CEO  
EBO  
V
V
I
I
I
-6  
A
C
-10  
A
CP  
B
-2  
A
P
Collector Dissipation (T =25°C)  
20  
W
W
°C  
°C  
C
C
Collector Dissipation (T =25°C)  
1.75  
150  
a
T
T
Junction Temperature  
Storage Temperature  
J
- 65 ~ 150  
STG  
Electrical Characteristics T =25°C unless otherwise noted  
C
Symbol  
Parameter  
* Collector-Emitter Sustaining Voltage  
Collector Cut-off Current  
Collector Cut-off Current  
Emitter Cut-off Current  
Test Condition  
Min.  
Max.  
Units  
V
(sus)  
I
= - 30mA, I = 0  
-100  
V
CEO  
CEO  
CES  
EBO  
C
B
I
I
I
V
V
V
= -60V, I = 0  
-50  
-10  
µA  
µA  
mA  
CE  
CE  
BE  
B
= -100V, V = 0  
BE  
= -5V, I = 0  
-0.5  
C
h
* DC Current Gain  
V
V
= -4V, I = -0.3A  
30  
15  
FE  
CE  
CE  
C
= -4V, I = -3A  
75  
-1.5  
-2  
C
V
V
(sat)  
* Collector-Emitter Saturation Voltage  
* Base-Emitter On Voltage  
I
= -6A, I = -600mA  
V
V
CE  
BE  
C
B
(on)  
V
V
= -6A, I = -4A  
C
CE  
CE  
f
Current Gain Bandwidth Product  
= -10V, I = -500mA  
3
MHz  
T
C
* Pulse Test: PW300µs, Duty Cycle2%  
Publication Order Number:  
©2002 Semiconductor Components Industries, LLC.  
KSH42C/D  
October-2017,Rev. 1  
Typical Characteristics  
1000  
100  
10  
-10  
VCE = -2V  
IC = 10 IB  
-1  
VBE(sat)  
-0.1  
VCE(sat)  
1
-0.01  
-0.01  
-0.01  
-0.1  
-1  
-10  
-0.1  
-1  
-10  
IC[A], COLLECTOR CURRENT  
IC[A], COLLECTOR CURRENT  
Figure 1. DC current Gain  
Figure 2. Base-Emitter Saturation Voltage  
Collector-Emitter Saturation Voltage  
10  
1000  
VCC = -30V  
IC = 10.IB  
1
100  
10  
1
tR  
0.1  
tD VBE(off)=-5V  
0.01  
-0.01  
-0.1  
-1  
-10  
-0.1  
-1  
-10  
-100  
IC[A], COLLECTOR CURRENT  
VCB[V], COLLECTOR-BASE VOLTAGE  
Figure 3. Collector Capacitance  
Figure 4. Turn On Time  
10  
-100  
-10  
VCC = -30V  
IC = 10.IB  
ICP(max)  
1
tSTG  
IC(max)  
-1  
0.1  
tF  
-0.1  
-0.01  
0.01  
-0.01  
-0.1  
-1  
-10  
-1  
-10  
-100  
-1000  
IC[A], COLLECTOR CURRENT  
VCE[V], COLLECTOR-EMITTER VOLTAGE  
Figure 5. Turn Off Time  
Figure 6. Safe Operating Area  
www.onsemi.com  
2
Typical Characteristics (Continued)  
25  
20  
15  
10  
5
0
0
25  
50  
75  
100  
125  
150  
175  
TC[oC], CASE TEMPERATURE  
Figure 7. Power Derating  
www.onsemi.com  
3
Package Dimensions  
D-PAK  
6.60 ±0.20  
5.34 ±0.30  
2.30 ±0.10  
0.50 ±0.10  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
1.02 ±0.20  
2.30 ±0.20  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
6.60 ±0.20  
(5.34)  
(5.04)  
(1.50)  
(2XR0.25)  
0.76 ±0.10  
Dimensions in Millimeters  
www.onsemi.com  
4
Package Dimensions(Continued)  
I-PAK  
2.30 ±0.20  
0.50 ±0.10  
6.60 ±0.20  
5.34 ±0.20  
(0.50)  
(4.34)  
(0.50)  
MAX0.96  
0.76 ±0.10  
0.50 ±0.10  
2.30TYP  
2.30TYP  
[2.30±0.20]  
[2.30±0.20]  
Dimensions in Millimeters  
www.onsemi.com  
5
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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