KSH44H11TF [ONSEMI]
NPN 外延硅晶体管;
| 型号： | KSH44H11TF |
| 厂家： | 
ONSEMI |
| 描述： | NPN 外延硅晶体管 开关 晶体管 |
| 文件： | 总7页 (文件大小：367K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
April 2015
KSH44H11 / KSH44H11I
NPN Epitaxial Silicon Transistor
Description
Features
Designed for general-purpose power and switching, such
as output or driver stages in applications.
• Lead Formed for Surface Mount Application (No Suffix)
• Straight Lead (I-PAK, “- I” Suffix)
• Electrically Similar to Popular KSE44H
• Fast Switching Speeds
• Low Collector-Emitter Saturation Voltage
Applications
• Switching Regulators
• Converters
D-PAK
I-PAK
1
1
1.Base 2.Collector 3.Emitter
• Power Amplifiers
Ordering Information
Part Number
KSH44H11TF
KSH44H11TM
KSH44H11ITU
Top Mark
KSH44H11
KSH44H11
KSH44H11-I
Package
Packing Method
Tape and Reel
Tape and Reel
Rail
TO-252 3L (DPAK)
TO-252 3L (DPAK)
TO-251 3L (IPAK)
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
VCEO
VEBO
IC
Parameter
Value
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
80
5
8
V
Collector Current (DC)
Collector Current (Pulse)
A
ICP
16
A
Collector Dissipation (TC = 25°C)
Collector Dissipation (TA = 25°C)
Junction Temperature
20.00
1.75
PC
W
TJ
150
°C
°C
TSTG
Storage Temperature
- 65 to +150
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
1
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V
VCEO(sus) Collector-Emitter Sustaining Voltage(1) IC = 30 mA, IB = 0
80
ICEO
IEBO
Collector Cut-Off Current
Emitter Cut-Off Current
VCE = 80 V, IB = 0
VEB = 5 V, IC = 0
10
50
μA
μA
VCE = 1 V, IC = 2 A
VCE = 1 V, IC = 4 A
IC = 8 A, IB = 0.4 A
IC = 8 A, IB = 0.8 A
VCE = 10 V, IC = 0.5 A
VCB = 10 V, f = 1 MHz
60
40
hFE
DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
1
V
V
1.5
fT
Cob
tON
tSTG
tF
Current Gain Bandwidth Product
Output Capacitance
Turn-On Time
50
MHz
pF
ns
130
300
500
140
IC = 5 A,
IB1 = - IB2 = 0.5 A
Storage Time
ns
Fall Time
ns
Note:
1. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%.
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
2
Typical Performance Characteristics
100
10
1000
VCE = 1V
ICP(max)
IC(max)
1
0
0
s
5
0
0
s
100
10
1
D
C
1
0.1
0.01
1
10
100
1000
0.01
0.1
1
10
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
Figure 1. DC Current Gain
Figure 2. Safe Operating Area
25
20
15
10
5
0
0
25
50
75
100
125
150
175
TC[oC], CASE TEMPERATURE
Figure 3. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSH44H11 / KSH44H11I Rev. 2.6
www.fairchildsemi.com
3
0.10 B
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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