LM78L05ACZ [ONSEMI]

三端子 0.1A 正向电压稳压器;
LM78L05ACZ
型号: LM78L05ACZ
厂家: ONSEMI    ONSEMI
描述:

三端子 0.1A 正向电压稳压器

稳压器
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July 2015  
MC78LXXA / LM78LXXA  
3-Terminal 0.1 A Positive Voltage Regulator  
Description  
Features  
The MC78LXXA / LM78LXXA series of fixed-voltage  
monolithic integrated circuit voltage regulators are suit-  
able for applications that required supply current up to  
100 mA.  
• Maximum Output Current of 100 mA  
• Output Voltage of 5 V, 6 V, 8 V, 12 V, and 15 V  
• Thermal Overload Protection  
• Short-Circuit Current Limiting  
• Output Voltage Offered in ±5% Tolerance  
TO-92  
SOT-89  
8-SOIC  
GND  
8
1
1
2 3  
1. Output 2. GND  
3. GND 4. NC  
2
1
3
5. NC 6. GND  
7. GND 8. Input  
1. Output 2. GND 3. Input  
Ordering Information  
Product Number Package Packing Method Output Voltage Tolerance Operating Temperature  
LM78L05ACZ  
LM78L05ACZX  
LM78L05ACZXA  
LM78L12ACZ  
Bulk  
Tape & Reel  
Ammo  
Bulk  
LM78L12ACZX  
MC78L05ACP  
MC78L05ACPXA  
MC78L06ACP  
MC78L08ACP  
MC78L15ACP  
MC78L15ACPXA  
MC78L05ACD  
MC78L05ACDX  
MC78L05ACHX  
MC78L08ACHX  
Tape & Reel  
Bulk  
TO-92  
Ammo  
Bulk  
±5%  
-40 to +125°C  
Bulk  
Bulk  
Ammo  
Rail  
8-SOIC  
SOT-89  
Tape & Reel  
Tape & Reel  
Tape & Reel  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
Block Diagram  
Input  
3
THERMAL SHUTDOWN  
CIRCUIT  
I
+
-
REFERENCE VOLTAGE  
SHORT-CIRCUIT  
PROTECTION  
RSC  
V
Output  
GND  
2
1
Figure 1. Block Diagram  
Absolute Maximum Ratings  
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-  
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-  
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The  
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.  
Symbol  
Parameter  
Value  
Unit  
V
VO = 5 V to 8 V  
30  
VI  
Input Voltage  
VO = 12 V to 15 V  
35  
-40 to +125°C  
150  
V
TOPR  
TJ(MAX)  
TSTG  
Operating Temperature Range  
°C  
Maximum Junction Temperature  
Storage Temperature Range  
°C  
-65 to +150  
50  
°C  
RθJC  
Thermal Resistance, Junction-Case  
TO-92  
°C/W  
°C/W  
°C/W  
°C/W  
TO-92  
150  
RθJA  
Thermal Resistance, Junction-Air  
SOT-89  
8-SOIC  
225  
160  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
2
Electrical Characteristics (MC78L05A / LM78L05A)  
VI = 10 V, IO = 40 mA, -40°C TJ 125°C, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.  
Symbol  
Parameter  
Output Voltage  
Conditions  
Min. Typ. Max. Unit  
VO  
TJ = 25°C  
TJ = 25°C  
4.8  
5.0  
8
5.2  
150  
100  
60  
V
mV  
mV  
mV  
mV  
V
7 V VI 20 V  
ΔVO  
ΔVO  
VO  
Line Regulation(1)  
Load Regulation(1)  
8 V VI 20 V  
6
1 mA IO 100 mA  
1 mA IO 40 mA  
1 mA IO 40 mA  
11  
5.0  
TJ = 25°C  
30.0  
5.25  
5.25  
5.5  
7 V VI 20 V  
7 V VI VMAX  
Output Voltage  
(2)  
1 mA IO 70 mA 4.75  
V
IQ  
Quiescent Current  
TJ = 25°C  
2.0  
mA  
mA  
mA  
μV/Vo  
mV/°C  
dB  
ΔIQ  
ΔIQ  
VN  
With Line 8 V VI 20 V  
1.5  
Quiescent Current  
Change  
With Load 1 mA IO 40 mA  
TA = 25°C, 10 Hz f 100 kHz  
IO = 5 mA  
f = 120 Hz, 8 V VI 18 V, TJ = 25°C  
TJ = 25°C  
0.1  
Output Noise Voltage  
40  
-0.65  
80  
ΔVO/ΔT Temperature Coefficient of VO  
RR  
VD  
Ripple Rejection  
Dropout Voltage  
41  
1.7  
V
Notes:  
1. The maximum steady-state usable output current and input voltage are very dependent on the heat sinking and/or  
lead length of the package. The data above represents pulse test conditions with junction temperature as indicated  
at the initiation of tests.  
2. Power dissipation PD 0.75 W.  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
3
Electrical Characteristics (MC78L06A)  
VI = 12 V, IO = 40 mA, -40°C TJ 125°C, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.  
Symbol  
Parameter  
Output Voltage  
Conditions  
Min. Typ. Max. Unit  
VO  
TJ = 25°C  
TJ = 25°C  
5.75  
6.0  
64  
54  
6.25  
175  
125  
V
mV  
mV  
mV  
mV  
V
8.5 V VI 20 V  
9 V VI 20 V  
ΔVO  
ΔVO  
VO  
Line Regulation(3)  
Load Regulation(3)  
Output Voltage  
1 mA IO 100 mA  
1 mA IO 70 mA  
12.8 80.0  
TJ = 25°C  
5.8  
40.0  
6.3  
6.3  
5.5  
6.0  
1.5  
0.1  
8.5 V VI 20 V, 1 mA IO 40 mA  
8.5 V VI VMAX(4), 1 mA IO 70 mA 5.7  
5.7  
V
TJ = 25°C  
mA  
mA  
mA  
mA  
μV/Vo  
mV/°C  
dB  
IQ  
Quiescent Current  
TJ = 125°C  
3.9  
ΔIQ  
ΔIQ  
VN  
With Line 9 V VI 20 V  
With Load 1 mA IO 40 mA  
TA = 25°C, 10 Hz f 100 kHz  
IO = 5 mA  
Quiescent Current  
Change  
Output Noise Voltage  
40  
0.75  
46  
ΔVO/ΔT Temperature Coefficient of VO  
RR  
VD  
Ripple Rejection  
Dropout Voltage  
f = 120 Hz, 10 V VI 20 V, TJ = 25°C 40  
TJ = 25°C  
1.7  
V
Notes:  
3. The maximum steady-state usable output current and input voltage are very dependent on the heat sinking  
and/or lead length of the package. The data above represents pulse test conditions with junction temperature  
as indicated at the initiation of tests.  
4. Power dissipation PD 0.75 W.  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
4
Electrical Characteristics (MC78L08A)  
VI = 14 V, IO = 40 mA, -40°C TJ 125°C, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.  
Symbol Parameter  
Conditions  
Min. Typ. Max. Unit  
VO  
Output Voltage  
TJ = 25°C  
TJ = 25°C  
7.7  
8.0  
10  
8
8.3  
175  
125  
80  
V
mV  
mV  
mV  
mV  
V
10.5 V VI 23 V  
ΔVO  
Line Regulation(5)  
11 V VI 23 V  
1 mA IO 100 mA  
1 mA IO 40 mA  
1 mA IO 40 mA  
1 mA IO 70 mA  
15  
8
ΔVO  
Load Regulation(5)  
TJ = 25°C  
40  
10.5V VI 23V  
10.5V VI VMAX  
7.6  
7.6  
8.4  
8.4  
5.5  
1.5  
0.1  
VO  
Output Voltage  
(6)  
V
IQ  
Quiescent Current  
TJ = 25°C  
2.0  
mA  
mA  
mA  
μV/Vo  
mV/°C  
dB  
ΔIQ  
ΔIQ  
VN  
With Line 11 V VI 23 V  
QuiescentCurrent  
Change  
With Load 1 mA IO 40 mA  
TA = 25°C, 10 Hz f 100 kHz  
Output Noise Voltage  
60  
-0.8  
70  
ΔVO/ΔT Temperature Coefficient of VO IO = 5 mA  
RR  
VD  
Ripple Rejection  
Dropout Voltage  
f = 120 Hz, 11 V VI 21 V, TJ = 25°C  
TJ = 25°C  
39  
1.7  
V
Notes:  
5. The maximum steady-state usable output current and input voltage are very dependent on the heat sinking and/or  
lead length of the package. The data above represents pulse test conditions with junction temperature as indicated  
at the initiation of tests.  
6. Power dissipation PD 0.75 W.  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
5
Electrical Characteristics (MC78L12A / LM78L12A)  
VI = 19 V, IO = 40 mA, -40°C TJ 125°C, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.  
Symbol  
Parameter  
Output Voltage  
Conditions  
Min. Typ. Max. Unit  
VO  
TJ = 25°C  
TJ = 25°C  
11.5 12.0 12.5  
V
mV  
mV  
mV  
mV  
V
14.5 V VI 27 V  
20  
15  
20  
10  
250  
200  
100  
50  
ΔVO  
ΔVO  
VO  
Line Regulation (7)  
Load Regulation (7)  
16 V VI 27 V  
1 mA IO 100 mA  
1 mA IO 40 mA  
TJ = 25°C  
14.5 V VI 27 V  
14.5 V VI VMAX  
TJ = 25°C  
1 mA IO 40 mA 11.4  
1 mA IO 70 mA 11.4  
12.6  
12.6  
6.0  
Output Voltage  
(8)  
V
IQ  
Quiescent Current  
2.1  
mA  
mA  
mA  
μV/Vo  
mV/°C  
dB  
ΔIQ  
ΔIQ  
VN  
With Line  
16 V VI 27 V  
1.5  
Quiescent  
Current Change  
With Load 1 mA IO 40 mA  
TA = 25°C, 10 Hz f 100 kHz  
0.1  
Output Noise Voltage  
80  
-1.0  
65  
ΔVO/ΔT Temperature Coefficient of VO IO = 5 mA  
RR  
VD  
Ripple Rejection  
Dropout Voltage  
f = 120 Hz, 15 V VI 25 V, TJ = 25°C  
TJ = 25°C  
37  
1.7  
V
Notes:  
7. The maximum steady-state usable output current and input voltage are very dependent on the heat sinking and/or  
lead length of the package. The data above represents pulse test conditions with junction temperature as indicated  
at the initiation of tests.  
8. Power dissipation PD 0.75 W.  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
6
Electrical Characteristics (MC78L15A)  
VI = 23 V, IO = 40 mA, -40°C TJ 125°C, CI = 0.33 μF, CO = 0.1 μF, unless otherwise specified.  
Symbol  
Parameter  
Output Voltage  
Conditions  
Min. Typ. Max. Unit  
VO  
TJ = 25°C  
TJ = 25°C  
14.4 15.0 15.6  
V
mV  
mV  
mV  
mV  
V
17.5 V VI 30 V  
25  
20  
25  
12  
300  
250  
150  
75  
ΔVO  
ΔVO  
VO  
Line Regulation(9)  
Load Regulation(9)  
20 V VI 30 V  
1 mA IO 100 mA  
1 mA IO 40 mA  
TJ = 25°C  
17.5 V VI 30 V  
17.5 V VI VMAX  
1 mA IO 40 mA 14.25  
1 mA IO 70 mA 14.25  
15.75  
15.75  
6.0  
Output Voltage  
(10)  
V
IQ  
Quiescent Current  
TJ = 25°C  
2.1  
mA  
mA  
mA  
μV/Vo  
mV/°C  
dB  
ΔIQ  
ΔIQ  
VN  
With Line 20 V VI 30 V  
With Load 1 mA IO 40 mA  
1.5  
Quiescent  
Current Change  
0.1  
Output Noise Voltage  
TA = 25°C, 10 Hz f 100 kHz  
90  
-1.3  
60  
ΔVO/ΔT Temperature Coefficient of VO IO = 5 mA  
RR  
VD  
Ripple Rejection  
Dropout Voltage  
f = 120 Hz, 18.5 V VI 28.5 V, TJ = 25°C  
TJ = 25°C  
34  
1.7  
V
Notes:  
9. The maximum steady-state usable output current and input voltage are very dependent on the heat sinking and/or  
lead length of the package. The data above represents pulse test conditions with junction temperature as indicated  
at the initiation of tests.  
10. Power dissipation PD 0.75 W.  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
7
Typical Application  
MC78LXXA/LM78LXXA  
3(8)  
1(1)  
MC78LXXA / LM78LXXA(13)  
INPUT  
OUTPUT  
(14)  
C (14)  
CO  
I
2(2,3,6,7)  
μ
F
0. 1  
μ
0.33  
F
Figure 2. Typical Application  
Notes:  
13. To specify an output voltage, substitute voltage value for “XX”.  
14. CI is required if the regulator is located an appreciable distance from the power supply filter. Though Co is not  
needed for stability, it improves transient response. Bypass capacitors are recommended for optimum stability and  
transient response and should be located as close as possible to the regulator.  
© 2002 Fairchild Semiconductor Corporation  
MC78LXXA / LM78LXXA Rev. 1.9  
www.fairchildsemi.com  
8
4.70  
4.30  
A
C
2.23 MIN  
0.50 X 45°  
1.87  
1.45  
0.30 X 45°  
C
B
1.40  
C
SYMM  
L
2.70  
2.30  
5.30 MIN  
C
90°  
4.50  
3.90  
C
1
2
3
1.30  
0.89  
2.00 MIN  
0.52  
0.30  
C
(2X)  
0.54  
1
2
3
M
0.10  
C
A
B
1.50  
0.90 MIN 2X  
0.96 MIN  
3.00  
1.50  
3.00 MIN  
1.70  
1.30  
C
LAND PATTERN  
RECOMMENDATION  
SEATING PLANE  
C
0.60  
C
0.40  
0.50  
0.35  
0.35  
3
1
2.29  
2.13  
2.70  
NOTES: UNLESS OTHERW ISE SPECIFIED.  
A. REFERENCE TO JEDEC TO-243 VARIATION AA.  
B. ALL DIMENSIONS ARE IN MILLIMETERS.  
C
DOES NOT COMPLY JEDEC STANDARD VALUE.  
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,  
MOLD FLASH AND TIE BAR PROTRUSION.  
E. DIMENSION AND TOLERANCE AS PER ASME  
Y14.5-1994.  
F. DRAW ING FILE NAME: MA03CREV3  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
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