MAC12SM [ONSEMI]
Sensitive Gate Triacs; 敏感的双向可控硅门
| 型号： | MAC12SM |
| 厂家： | 
ONSEMI |
| 描述： | Sensitive Gate Triacs |
| 文件： | 总6页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAC12SM, MAC12SN
Preferred Device
Sensitive Gate Triacs
Silicon Bidirectional Thyristors
Designed for industrial and consumer applications for full wave
control of ac loads such as appliance controls, heater controls, motor
controls, and other power switching applications.
• Sensitive Gate Allows Triggering by Microcontrollers and other
Logic Circuits
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TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
• Blocking Voltage to 800 Volts
• On-State Current Rating of 12 Amperes RMS at 70°C
• High Surge Current Capability - 90 Amperes
• Rugged, Economical TO220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
• Maximum Values of I , V and I Specified for Ease of Design
GT GT
H
MT2
MT1
• High Commutating di/dt - 8.0 A/ms Minimum at 110°C
• Immunity to dV/dt - 15 V/msec Minimum at 110°C
• Operational in Three Quadrants: Q1, Q2, and Q3
G
MARKING
DIAGRAM
• Device Marking: Logo, Device Type, e.g., MAC12SM, Date Code
4
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
MAC12xx
ALYWW
Rating
Symbol Value
Unit
Peak Repetitive Off-State Voltage (Note 1)
(T = -40 to 110°C, Sine Wave,
J
V
V
V
DRM,
RRM
1
50 to 60 Hz, Gate Open)
MAC12SM
2
600
800
3
TO-220AB
CASE 221A
Style 4
MAC12SN
On-State RMS Current
I
12
90
A
A
T(RMS)
xx
A
L
= Specific Device Code
= Assembly Location
= Wafer Lot
(All Conduction Angles; T = 70°C)
C
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
I
TSM
Y
= Year
T = 110°C)
J
WW = Work Week
2
2
Circuit Fusing Consideration
(t = 8.33 ms)
I t
33
16
A sec
PIN ASSIGNMENT
Peak Gate Power
(Pulse Width = 1.0 msec, T = 70°C)
P
W
W
GM
1
2
3
4
Main Terminal 1
Main Terminal 2
Gate
C
Average Gate Power
P
0.35
G(AV)
(t = 8.3 msec, T = 70°C)
C
Operating Junction Temperature Range
T
- 40 to
110
°C
°C
J
Main Terminal 2
Storage Temperature Range
T
stg
- 40 to
150
ORDERING INFORMATION
1. (V
and V
for all types can be applied on a continuous basis. Blocking
DRM
RRM
Device
MAC12SM
MAC12SN
Package
TO220AB
TO220AB
Shipping
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
50 Units/Rail
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 2003
1
Publication Order Number:
April, 2003 - Rev. 2
MAC12SM/D
MAC12SM, MAC12SN
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance - Junction to Case
R
R
2.2
62.5
°C/W
q
q
JC
JA
-
Junction to Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
I
I
,
mA
DRM
-
-
-
-
0.01
2.0
(V = Rated V , V ; Gate Open)
T = 25°C
J
T = 110°C
J
RRM
D
DRM
RRM
ON CHARACTERISTICS
(1)
Peak On-State Voltage
(I = ±17 A)
V
TM
-
-
1.85
V
TM
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 W)
I
mA
D
L
GT
-
-
-
1.5
2.5
2.7
5.0
5.0
5.0
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Holding Current
(V = 12 V, Gate Open, Initiating Current = ±200 mA)
D
I
-
2.5
10
mA
mA
H
Latching Current (V = 12 V, I = 5 mA)
I
D
G
L
-
-
-
3.0
5.0
3.0
15
20
15
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 W)
V
GT
V
D
L
0.45
0.45
0.45
0.68
0.62
0.67
1.5
1.5
1.5
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
DYNAMIC CHARACTERISTICS
Critical Rate of Change of Commutating Current
(V = 400 V, I = 3.5 A, Commutating dV/dt = 10 V/ms, Gate Open,
T = 110°C, f = 500 Hz, Snubber: Cs = 0.01 mf, Rs = 15 W)
J
(di/dt)
8.0
15
-
10
40
-
-
A/ms
V/ms
A/ms
c
D
TM
Critical Rate of Rise of Off-State Voltage
dV/dt
di/dt
-
(V = 67% V
, Exponential Waveform, R = 1 KW,
GK
D
DRM
T = 110°C)
J
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 1 A/msec; Igt = 100 mA;
f = 60 Hz
10
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MAC12SM, MAC12SN
Voltage Current Characteristic of Triacs
(Bidirectional Device)
+ Current
Quadrant 1
MainTerminal 2 +
Symbol
Parameter
V
TM
V
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
DRM
DRM
on state
I
I
H
I
at V
RRM
V
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
RRM
RRM
RRM
I
V
Maximum On State Voltage
Holding Current
+ Voltage
off state
TM
I
H
I
at V
DRM
DRM
I
H
Quadrant 3
MainTerminal 2 -
V
TM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
(+) MT2
(+) MT2
Quadrant II
Quadrant I
(-) I
(+) I
GT
GT
GATE
GATE
MT1
MT1
REF
REF
I
-
+ I
GT
GT
(-) MT2
(-) MT2
Quadrant III
Quadrant IV
(+) I
(-) I
GT
GT
GATE
GATE
MT1
REF
MT1
REF
-
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in-phase signals (using standard AC lines) quadrants I and III are used.
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3
MAC12SM, MAC12SN
0.90
Q1
0.85
100
10
0.80
Q3
Q2
0.75
0.70
Q2
Q3
Q1
0.65
0.60
0.55
0.50
1
0.45
0.40
0.1
- 40 - 25 - 10
5
20 35 50 65 80 95 110
- 40 - 25 - 10
5
20 35
50 65 80
95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Typical Gate Trigger Voltage
versus Junction Temperature
Figure 1. Typical Gate Trigger Current
versus Junction Temperature
100
10
100
10
Q1
Q2
Q3
MT2 Positive
MT2 Negative
1
1
0.1
0.1
- 40 - 25 - 10
5
20 35 50 65 80 95 110
- 40 - 25 - 10
5
20 35 50 65 80 95 110
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 4. Typical Holding Current
versus Junction Temperature
Figure 3. Typical Latching Current
versus Junction Temperature
25
20
15
10
110
100
90
DC
180°
120°
30°, 60°
90°
60°
90°
80
30°
180°
70
60
5
0
DC
0
2
4
6
8
10
12
0
2
4
6
8
10
12
I , RMS ON-STATE CURRENT (AMPS)
T(RMS)
I , AVERAGE ON-STATE CURRENT (AMPS)
T(AV)
Figure 5. Typical RMS Current Derating
Figure 6. On-State Power Dissipation
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4
MAC12SM, MAC12SN
100
1
Typical @ T = 25°C
J
Maximum @ T = 110°C
J
Maximum @ T = 25°C
J
10
0.1
1
0.01
0.1
1
10
100
1000
10000
t, TIME (ms)
Figure 8. Typical Thermal Response
0.1
0.5
1.5
2.5
3.5
4.5
V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
T
Figure 7. Typical On-State Characteristics
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5
MAC12SM, MAC12SN
PACKAGE DIMENSIONS
TO-220AB
CASE 221A-09
ISSUE AA
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
-T-
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
S
B
F
T
4
1
INCHES
DIM MIN MAX
MILLIMETERS
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.46
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
−−−
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
−−−
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
−−−
0.620
0.405
0.190
0.035
0.147
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
−−−
2
3
U
H
G
H
J
K
L
L
R
J
N
Q
R
S
T
V
G
D
U
V
Z
N
0.080
2.04
STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2
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liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
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MAC12SM/D
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