MAC15-8 [ONSEMI]

Triacs Silicon Bidirectional Thyristors; 双向晶闸管硅双向晶闸管


型号：	MAC15-8
厂家：	ONSEMI
描述：	Triacs Silicon Bidirectional Thyristors 双向晶闸管硅双向晶闸管触发装置三端双向交流开关
文件：	总6页 (文件大小：70K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MAC15 Series

Preferred Device

Triacs

Silicon Bidirectional Thyristors

Designed primarily for full-wave ac control applications, such as

solid−state relays, motor controls, heating controls and power

supplies; or wherever full−wave silicon gate controlled solid−state

devices are needed. Triac type thyristors switch from a blocking to a

conducting state for either polarity of applied main terminal voltage

with positive or negative gate triggering.

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TRIACS

15 AMPERES RMS

400 thru 800 VOLTS

Features

• Blocking Voltage to 800 V

• All Diffused and Glass Passivated Junctions for Greater Parameter

Uniformity and Stability

MT2

MT1

• Small, Rugged, Thermowatt Construction for Low Thermal

Resistance, High Heat Dissipation and Durability

• Gate Triggering Guaranteed in Three Modes (MAC15 Series) or

Four Modes (MAC15A Series)

MARKING

DIAGRAM

• Pb−Free Packages are Available*

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

TO−220AB

CASE 221A

STYLE 4

MAC15xxG

AYWW

Peak Repetitive Off−State Voltage Note 1

DRM,

RRM

(T = −40 to +125°C, Sine Wave 50 to 60 Hz,

Gate Open)

MAC15A6

400

600

800

MAC15−8, MAC15A8

MAC15−10, MAC15A10

Peak Gate Voltage

(Pulse Width v 1.0 msec; T = 90°C)

On−State Current RMS; Full Cycle Sine

T(RMS)

Wave 50 to 60 Hz (T = +90°C)

MAC15xx = Specific Device Code

= See Table on Page 2

= Assembly Location

= Year

= Work Week

= Pb−Free Package

Circuit Fusing Consideration (t = 8.3 ms)

I t

A s

Peak Non−Repetitive Surge Current (One

150

TSM

Full Cycle Sine Wave, 60 Hz, T = +80°C)

Preceded and Followed by Rated Current

Peak Gate Power

(T = +80°C, Pulse Width = 1.0 ms)

PIN ASSIGNMENT

Average Gate Power (T = +80°C, t = 8.3 ms)

0.5

2.0

G(AV)

Main Terminal 1

Peak Gate Current

(Pulse Width v 1.0 msec; T = 90°C)

Main Terminal 2

Gate

Operating Junction Temperature Range

Storage Temperature Range

−40 to +125 °C

−40 to +150 °C

Main Terminal 2

stg

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

ORDERING INFORMATION

See detailed ordering, marking, and shipping information in

the package dimensions section on page 2 of this data sheet.

1. V

and V

for all types can be applied on a continuous basis. Blocking

DRM

RRM

voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2006

Publication Order Number:

August, 2006 − Rev. 3

MAC15A4/D

MAC15 Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Value

2.0

Unit

°C/W

°C

Thermal Resistance, Junction−to−Case

Thermal Resistance, Junction−to−Ambient

62.5

260

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted; Electricals apply in both directions)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Peak Blocking Current

T = 25°C

−

DRM,

RRM

(V = Rated V

, V

; Gate Open)

T = 125°C

DRM RRM

2.0

ON CHARACTERISTICS

Peak On−State Voltage Note 2 (I = "21 A Peak)

−

1.3

1.6

Gate Trigger Current (Continuous dc) (V = 12 Vdc, R = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+) “A’’ SUFFIX ONLY

−

Gate Trigger Voltage (Continuous dc) (V = 12 Vdc, R = 100 W)

MT2(+), G(+)

MT2(+), G(−)

MT2(−), G(−)

MT2(−), G(+) “A’’ SUFFIX ONLY

−

0.9

1.1

1.4

2.5

Gate Non−Trigger Voltage (V = 12 V, R = 100 W) T = 110°C)

MT2(+), G(+); MT2(−), G(−); MT2(+), G(−)

MT2(−), G(+) “A’’ SUFFIX ONLY

0.2

−

Holding Current (V = 12 Vdc, Gate Open, Initiating Current = "200 mA)

−

6.0

1.5

−

Turn-On Time (V = Rated V , I = 17 A)

DRM TM

(I = 120 mA, Rise Time = 0.1 ms, Pulse Width = 2 ms)

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Commutation Voltage (V = Rated V

, I = 21 A,

DRM TM

dv/dt(c)

−

5.0

−

V/ms

Commutating di/dt = 7.6 A/ms, Gate Unenergized, T = 80°C)

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.

ORDERING INFORMATION

Device

Device Marking

Package

Shipping

MAC15−008

MAC15−8G

TO−220AB

MAC15−8

TO−220AB

(Pb−Free)

MAC15−10

TO−220AB

MAC1510

MAC15A6

MAC15A8

MAC15−10G

TO−220AB

(Pb−Free)

MAC15A6

TO−220AB

500 Units Bulk

MAC15A6G

TO−220AB

(Pb−Free)

MAC15A8

TO−220AB

MAC15A8G

TO−220AB

(Pb−Free)

MAC15A10

TO−220AB

MAC15A10G

TO−220AB

(Pb−Free)

MAC15A10

MAC15A10T

TO−220AB

50 Units / Rail

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MAC15 Series

Voltage Current Characteristic of Triacs

(Bidirectional Device)

+ Current

Quadrant 1

MainTerminal 2 +

Symbol

Parameter

Peak Repetitive Forward Off State Voltage

Peak Forward Blocking Current

DRM

on state

at V

RRM

Peak Repetitive Reverse Off State Voltage

Peak Reverse Blocking Current

RRM

Maximum On State Voltage

Holding Current

+ Voltage

off state

at V

DRM

Quadrant 3

MainTerminal 2 −

Quadrant Definitions for a Triac

MT2 POSITIVE

(Positive Half Cycle)

(+) MT2

Quadrant II

Quadrant I

(−) I

(+) I

GATE

MT1

REF

−

+ I

(−) MT2

Quadrant III

Quadrant IV

(+) I

(−) I

GATE

MT1

REF

MT1

REF

−

MT2 NEGATIVE

(Negative Half Cycle)

All polarities are referenced to MT1.

With in−phase signals (using standard AC lines) quadrants I and III are used.

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MAC15 Series

130

120

110

100

α = 180°

α = 30°

α = 60°

α = 90°

120°

90°

T ≈ 125°

60°

30°

α = 180°

α = CONDUCTION ANGLE

T ≈ 125°

α = CONDUCTION ANGLE

RMS ON−STATE CURRENT (AMP)

ON−STATE CURRENT (AMP)

T(RMS),

Figure 2. On−State Power Dissipation

Figure 1. RMS Current Derating

1.8

1.6

1.4

1.2

1.0

0.8

OFF−STATE VOLTAGE = 12 V

QUADRANT 4

OFF−STATE VOLTAGE = 12 V

QUADRANTS

QUADRANT

0.6

0.4

7.0

5.0

−60 −40 −20

80 100 120 140

−60 −40 −20

100 120 140

T , JUNCTION TEMPERATURE (°C)

Figure 4. Typical Gate Trigger Current

Figure 3. Typical Gate Trigger Voltage

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MAC15 Series

100

GATE OPEN

MAIN TERMINAL #1

POSITIVE

T = 25°C

7.0

5.0

125°C

MAIN TERMINAL #2

POSITIVE

3.0

2.0

−60 −40 −20

100 120 140

T , JUNCTION TEMPERATURE (°C)

Figure 6. Typical Holding Current

300

200

0.7

0.5

100

0.3

0.2

= 80°C

Tꢀf = 60 Hz

Surge is preceded and followed by rated current

0.1

0.4 0.8

1.2 1.6

2.4 2.8 3.2

3.6

4.4

, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)

NUMBER OF CYCLES

Figure 5. On−State Characteristics

Figure 7. Maximum Non−Repetitive

Surge Current

0.5

0.2

0.1

• R

JC(t) = r(t)

0.05

0.02

0.01

0.1

0.2

0.5

100

200

500

1 k

2 k

5 k

10 k

t, TIME (ms)

Figure 8. Thermal Response

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MAC15 Series

PACKAGE DIMENSIONS

TO−220AB

CASE 221A−09

ISSUE AD

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

SEATING

PLANE

−T−

INCHES

DIM MIN MAX

MILLIMETERS

MIN

14.48

9.66

4.07

0.64

3.61

2.42

2.80

0.46

12.70

1.15

4.83

2.54

2.04

1.15

5.97

0.00

1.15

−−−

MAX

15.75

10.28

4.82

0.88

3.73

2.66

3.93

0.64

14.27

1.52

5.33

3.04

2.79

1.39

6.47

1.27

−−−

0.570

0.380

0.160

0.025

0.142

0.095

0.110

0.018

0.500

0.045

0.190

0.100

0.080

0.045

0.235

0.000

0.045

0.620

0.405

0.190

0.035

0.147

0.105

0.155

0.025

0.562

0.060

0.210

0.120

0.110

0.055

0.255

0.050

−−−

−−− 0.080

2.04

STYLE 4:

PIN 1. MAIN TERMINAL 1

2. MAIN TERMINAL 2

3. GATE

4. MAIN TERMINAL 2

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

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Phone: 421 33 790 2910

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Email: orderlit@onsemi.com

For additional information, please contact your local

Sales Representative

MAC15A4/D

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MAC15-8 [ONSEMI]

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