MBR30H150CTG [ONSEMI]

SWITCHMODE? Power Rectifier; 开关模式™功率整流器
MBR30H150CTG
型号: MBR30H150CTG
厂家: ONSEMI    ONSEMI
描述:

SWITCHMODE? Power Rectifier
开关模式™功率整流器

开关
文件: 总6页 (文件大小:133K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBRF30H150CTG,  
MBR30H150CTG  
SWITCHMODE  
Power Rectifier  
150 V, 30 A  
http://onsemi.com  
Features and Benefits  
SCHOTTKY BARRIER  
RECTIFIER  
30 AMPERES, 150 VOLTS  
Low Forward Voltage  
Low Power Loss/High Efficiency  
High Surge Capability  
30 A Total (15 A Per Diode Leg)  
GuardRing for Stress Protection  
These are PbFree Devices  
1
2, 4  
3
Applications  
Power Supply Output Rectification  
Power Management  
Instrumentation  
MARKING  
DIAGRAMS  
Mechanical Characteristics:  
Case: Epoxy, Molded  
AYWW  
Epoxy Meets UL 94 V0 @ 0.125 in  
B30H150G  
TO220 FULLPAK]  
AKA  
Weight (Approximately): 1.9 Grams (TO220 & TO220FP)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
CASE 221D  
STYLE 3  
1
2
3
4
MAXIMUM RATINGS  
Please See the Table on the Following Page  
TO220AB  
CASE 221A  
STYLE 6  
AYWW  
B30H150G  
AKA  
1
2
3
A
Y
= Assembly Location  
= Year  
WW  
= Work Week  
B30H150 = Device Code  
G
= PbFree Device  
AKA  
= Polarity Designator  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
March, 2010 Rev. 1  
MBRF30H150CT/D  
MBRF30H150CTG, MBR30H150CTG  
MAXIMUM RATINGS (Per Diode Leg)  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
150  
V
RRM  
RWM  
R
V
V
Average Rectified Forward Current  
(Per Leg)  
(Per Device)  
I
15  
30  
A
A
F(AV)  
(Rated V ) T = 124°C  
R
C
Nonrepetitive Peak Surge Current  
I
200  
FSM  
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)  
Operating Junction Temperature (Note 1)  
Storage Temperature  
T
20 to +150  
65 to +150  
10,000  
°C  
°C  
J
T
stg  
Voltage Rate of Change (Rated V )  
dv/dt  
V/ms  
V
R
ESD Ratings:  
Machine Model = C  
Human Body Model = 3B  
> 400  
> 8000  
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Maximum Thermal Resistance  
(MBR30H150CTG)  
°C/W  
JunctiontoCase  
JunctiontoAmbient  
JunctiontoCase  
R
2.0  
45  
2.5  
q
JC  
JA  
JC  
R
q
(MBRF30H150CTG)  
R
q
ELECTRICAL CHARACTERISTICS (Per Diode Leg)  
Rating  
Symbol  
Typ  
Max  
Unit  
Maximum Instantaneous Forward Voltage (Note 2)  
v
V
F
(I = 5 A, T = 25°C)  
0.69  
0.55  
0.98  
0.68  
0.75  
0.60  
1.11  
0.73  
F
C
(I = 5 A, T = 125°C)  
F
C
(I = 15 A, T = 25°C)  
F
C
(I = 15 A, T = 125°C)  
F
C
Maximum Instantaneous Reverse Current (Note 2)  
i
R
(Rated DC Voltage, T = 25°C)  
60  
50  
mA  
mA  
C
(Rated DC Voltage, T = 125°C)  
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the  
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect  
device reliability.  
1. The heat generated must be less than the thermal conductivity from JunctiontoAmbient: dP /dT < 1/R .  
q
JA  
D
J
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.  
DEVICE ORDERING INFORMATION  
Device Order Number  
Package Type  
Shipping  
MBRF30H150CTG  
TO220FP  
(PbFree)  
50 Units / Rail  
50 Units / Rail  
MBR30H150CTG  
TO220  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specification Brochure, BRD8011/D.  
http://onsemi.com  
2
 
MBRF30H150CTG, MBR30H150CTG  
100  
10  
1
100  
T = 125°C  
J
T = 100°C  
J
T = 100°C  
J
T = 125°C  
J
T = 25°C  
J
T = 25°C  
J
10  
1
0.1  
0.1  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
0
0.2 0.4 0.6 0.8  
1
1.2 1.4 1.6 1.8  
2
2.2 2.4  
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)  
F
Figure 1. Typical Forward Voltage  
Figure 2. Maximum Forward Voltage  
1.0E02  
1.0E03  
1.0E04  
1.0E05  
1.0E06  
1.0E07  
1.0E01  
1.0E02  
1.0E03  
1.0E04  
1.0E05  
1.0E06  
T = 125°C  
J
T = 125°C  
J
T = 100°C  
J
T = 100°C  
J
T = 25°C  
J
T = 25°C  
J
0
10 20 30 40 50 60 70 80 90 100110120130140150  
0
10 20 30 40 50 60 70 80 90 100110120130140150  
V , REVERSE VOLTAGE (V)  
R
V , REVERSE VOLTAGE (V)  
R
Figure 3. Typical Reverse Current  
Figure 4. Maximum Reverse Current  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
T = 150°C  
J
dc  
SQUARE  
SQUARE WAVE  
dc  
0
0
95 100 105 110 115 120 125 130 135 140 145 150 155  
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30  
T , CASE TEMPERATURE (°C)  
C
I , AVERAGE FORWARD CURRENT (AMPS)  
O
Figure 5. Current Derating  
Figure 6. Forward Power Dissipation  
http://onsemi.com  
3
MBRF30H150CTG, MBR30H150CTG  
10000  
1000  
100  
T = 25°C  
J
10  
0
50  
100  
150  
V , REVERSE VOLTAGE (V)  
R
Figure 7. Capacitance  
100  
D = 0.5  
10  
1
0.2  
0.1  
0.05  
P
(pk)  
0.01  
t
1
0.1  
0.01  
t
2
DUTY CYCLE, D = t /t  
SINGLE PULSE  
0.00001 0.0001  
1 2  
0.000001  
0.001  
0.01  
t , TIME (sec)  
0.1  
1
10  
100  
1000  
1
Figure 8. Thermal Response JunctiontoAmbient for MBR30H150CTG  
10  
D = 0.5  
1
0.2  
0.1  
0.05  
P
(pk)  
0.1  
t
1
0.01  
t
2
DUTY CYCLE, D = t /t  
1 2  
SINGLE PULSE  
0.00001  
0.01  
0.000001  
0.0001  
0.001  
0.01  
t , TIME (sec)  
0.1  
1
10  
100  
1000  
1
Figure 9. Thermal Response JunctiontoCase for MBR30H150CTG  
http://onsemi.com  
4
MBRF30H150CTG, MBR30H150CTG  
10  
D = 0.5  
0.2  
1
0.1  
0.1  
0.05  
0.01  
P
(pk)  
t
1
0.01  
0.001  
t
2
SINGLE PULSE  
DUTY CYCLE, D = t /t  
1 2  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
t , TIME (sec)  
0.1  
1
10  
100  
1000  
1
Figure 10. Thermal Response JunctiontoCase for MBRF30H150CTG  
http://onsemi.com  
5
MBRF30H150CTG, MBR30H150CTG  
PACKAGE DIMENSIONS  
TO220 FULLPAK  
CASE 221D03  
ISSUE K  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
SEATING  
PLANE  
T−  
B−  
C
2. CONTROLLING DIMENSION: INCH  
3. 221D-01 THRU 221D-02 OBSOLETE, NEW  
STANDARD 221D-03.  
F
S
Q
H
INCHES  
DIM MIN MAX  
MILLIMETERS  
U
MIN  
15.67  
9.96  
4.50  
0.60  
2.95  
MAX  
16.12  
10.63  
4.90  
A
B
C
D
F
0.617  
0.392  
0.177  
0.024  
0.116  
0.635  
0.419  
0.193  
0.039  
0.129  
A
1
2 3  
1.00  
3.28  
G
H
J
0.100 BSC  
2.54 BSC  
Y−  
K
0.118  
0.018  
0.503  
0.048  
0.135  
0.025  
0.541  
0.058  
3.00  
0.45  
3.43  
0.63  
K
L
12.78  
1.23  
13.73  
1.47  
G
N
J
N
Q
R
S
U
0.200 BSC  
5.08 BSC  
R
0.122  
0.099  
0.092  
0.239  
0.138  
0.117  
0.113  
0.271  
3.10  
2.51  
2.34  
6.06  
3.50  
2.96  
2.87  
6.88  
L
D 3 PL  
STYLE 3:  
PIN 1. ANODE  
M
M
0.25 (0.010)  
B
Y
2. CATHODE  
3. ANODE  
TO220  
CASE 221A09  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION Z DEFINES A ZONE WHERE ALL  
BODY AND LEAD IRREGULARITIES ARE  
ALLOWED.  
ISSUE AF  
SEATING  
PLANE  
T−  
C
B
F
T
S
INCHES  
DIM MIN MAX  
MILLIMETERS  
4
1
MIN  
14.48  
9.66  
4.07  
0.64  
3.61  
2.42  
2.80  
0.36  
12.70  
1.15  
4.83  
2.54  
2.04  
1.15  
5.97  
0.00  
1.15  
---  
MAX  
15.75  
10.28  
4.82  
0.88  
4.09  
2.66  
3.93  
0.64  
14.27  
1.52  
5.33  
3.04  
2.79  
1.39  
6.47  
1.27  
---  
A
B
C
D
F
0.570  
0.380  
0.160  
0.025  
0.142  
0.095  
0.110  
0.014  
0.500  
0.045  
0.190  
0.100  
0.080  
0.045  
0.235  
0.000  
0.045  
---  
0.620  
0.405  
0.190  
0.035  
0.161  
0.105  
0.155  
0.025  
0.562  
0.060  
0.210  
0.120  
0.110  
0.055  
0.255  
0.050  
---  
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080  
2.04  
N
STYLE 6:  
PIN 1. ANODE  
2. CATHODE  
3. ANODE  
4. CATHODE  
FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
MBRF30H150CT/D  

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