MBR30H150CTG [ONSEMI]
SWITCHMODE? Power Rectifier; 开关模式™功率整流器型号: | MBR30H150CTG |
厂家: | ONSEMI |
描述: | SWITCHMODE? Power Rectifier |
文件: | 总6页 (文件大小:133K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MBRF30H150CTG,
MBR30H150CTG
SWITCHMODE™
Power Rectifier
150 V, 30 A
http://onsemi.com
Features and Benefits
SCHOTTKY BARRIER
RECTIFIER
30 AMPERES, 150 VOLTS
• Low Forward Voltage
• Low Power Loss/High Efficiency
• High Surge Capability
• 30 A Total (15 A Per Diode Leg)
• Guard−Ring for Stress Protection
• These are Pb−Free Devices
1
2, 4
3
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
MARKING
DIAGRAMS
Mechanical Characteristics:
• Case: Epoxy, Molded
AYWW
• Epoxy Meets UL 94 V−0 @ 0.125 in
B30H150G
TO−220 FULLPAK]
AKA
• Weight (Approximately): 1.9 Grams (TO−220 & TO−220FP)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
CASE 221D
STYLE 3
1
2
3
4
MAXIMUM RATINGS
Please See the Table on the Following Page
TO−220AB
CASE 221A
STYLE 6
AYWW
B30H150G
AKA
1
2
3
A
Y
= Assembly Location
= Year
WW
= Work Week
B30H150 = Device Code
G
= Pb−Free Device
AKA
= Polarity Designator
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
March, 2010 − Rev. 1
MBRF30H150CT/D
MBRF30H150CTG, MBR30H150CTG
MAXIMUM RATINGS (Per Diode Leg)
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
150
V
RRM
RWM
R
V
V
Average Rectified Forward Current
(Per Leg)
(Per Device)
I
15
30
A
A
F(AV)
(Rated V ) T = 124°C
R
C
Nonrepetitive Peak Surge Current
I
200
FSM
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
Operating Junction Temperature (Note 1)
Storage Temperature
T
−20 to +150
−65 to +150
10,000
°C
°C
J
T
stg
Voltage Rate of Change (Rated V )
dv/dt
V/ms
V
R
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
THERMAL CHARACTERISTICS
Rating
Symbol
Value
Unit
Maximum Thermal Resistance
(MBR30H150CTG)
°C/W
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Case
R
2.0
45
2.5
q
JC
JA
JC
R
q
(MBRF30H150CTG)
R
q
ELECTRICAL CHARACTERISTICS (Per Diode Leg)
Rating
Symbol
Typ
Max
Unit
Maximum Instantaneous Forward Voltage (Note 2)
v
V
F
(I = 5 A, T = 25°C)
0.69
0.55
0.98
0.68
0.75
0.60
1.11
0.73
F
C
(I = 5 A, T = 125°C)
F
C
(I = 15 A, T = 25°C)
F
C
(I = 15 A, T = 125°C)
F
C
Maximum Instantaneous Reverse Current (Note 2)
i
R
(Rated DC Voltage, T = 25°C)
60
50
mA
mA
C
(Rated DC Voltage, T = 125°C)
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
DEVICE ORDERING INFORMATION
Device Order Number
†
Package Type
Shipping
MBRF30H150CTG
TO−220FP
(Pb−Free)
50 Units / Rail
50 Units / Rail
MBR30H150CTG
TO−220
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
MBRF30H150CTG, MBR30H150CTG
100
10
1
100
T = 125°C
J
T = 100°C
J
T = 100°C
J
T = 125°C
J
T = 25°C
J
T = 25°C
J
10
1
0.1
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
2.2 2.4
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
T = 125°C
J
T = 125°C
J
T = 100°C
J
T = 100°C
J
T = 25°C
J
T = 25°C
J
0
10 20 30 40 50 60 70 80 90 100110120130140150
0
10 20 30 40 50 60 70 80 90 100110120130140150
V , REVERSE VOLTAGE (V)
R
V , REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
25
20
15
10
5
30
25
20
15
10
5
T = 150°C
J
dc
SQUARE
SQUARE WAVE
dc
0
0
95 100 105 110 115 120 125 130 135 140 145 150 155
0
2
4
6
8
10 12 14 16 18 20 22 24 26 28 30
T , CASE TEMPERATURE (°C)
C
I , AVERAGE FORWARD CURRENT (AMPS)
O
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
http://onsemi.com
3
MBRF30H150CTG, MBR30H150CTG
10000
1000
100
T = 25°C
J
10
0
50
100
150
V , REVERSE VOLTAGE (V)
R
Figure 7. Capacitance
100
D = 0.5
10
1
0.2
0.1
0.05
P
(pk)
0.01
t
1
0.1
0.01
t
2
DUTY CYCLE, D = t /t
SINGLE PULSE
0.00001 0.0001
1 2
0.000001
0.001
0.01
t , TIME (sec)
0.1
1
10
100
1000
1
Figure 8. Thermal Response Junction−to−Ambient for MBR30H150CTG
10
D = 0.5
1
0.2
0.1
0.05
P
(pk)
0.1
t
1
0.01
t
2
DUTY CYCLE, D = t /t
1 2
SINGLE PULSE
0.00001
0.01
0.000001
0.0001
0.001
0.01
t , TIME (sec)
0.1
1
10
100
1000
1
Figure 9. Thermal Response Junction−to−Case for MBR30H150CTG
http://onsemi.com
4
MBRF30H150CTG, MBR30H150CTG
10
D = 0.5
0.2
1
0.1
0.1
0.05
0.01
P
(pk)
t
1
0.01
0.001
t
2
SINGLE PULSE
DUTY CYCLE, D = t /t
1 2
0.000001
0.00001
0.0001
0.001
0.01
t , TIME (sec)
0.1
1
10
100
1000
1
Figure 10. Thermal Response Junction−to−Case for MBRF30H150CTG
http://onsemi.com
5
MBRF30H150CTG, MBR30H150CTG
PACKAGE DIMENSIONS
TO−220 FULLPAK
CASE 221D−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
SEATING
PLANE
−T−
−B−
C
2. CONTROLLING DIMENSION: INCH
3. 221D-01 THRU 221D-02 OBSOLETE, NEW
STANDARD 221D-03.
F
S
Q
H
INCHES
DIM MIN MAX
MILLIMETERS
U
MIN
15.67
9.96
4.50
0.60
2.95
MAX
16.12
10.63
4.90
A
B
C
D
F
0.617
0.392
0.177
0.024
0.116
0.635
0.419
0.193
0.039
0.129
A
1
2 3
1.00
3.28
G
H
J
0.100 BSC
2.54 BSC
−Y−
K
0.118
0.018
0.503
0.048
0.135
0.025
0.541
0.058
3.00
0.45
3.43
0.63
K
L
12.78
1.23
13.73
1.47
G
N
J
N
Q
R
S
U
0.200 BSC
5.08 BSC
R
0.122
0.099
0.092
0.239
0.138
0.117
0.113
0.271
3.10
2.51
2.34
6.06
3.50
2.96
2.87
6.88
L
D 3 PL
STYLE 3:
PIN 1. ANODE
M
M
0.25 (0.010)
B
Y
2. CATHODE
3. ANODE
TO−220
CASE 221A−09
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
ISSUE AF
SEATING
PLANE
−T−
C
B
F
T
S
INCHES
DIM MIN MAX
MILLIMETERS
4
1
MIN
14.48
9.66
4.07
0.64
3.61
2.42
2.80
0.36
12.70
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
---
MAX
15.75
10.28
4.82
0.88
4.09
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
---
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.014
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
---
0.620
0.405
0.190
0.035
0.161
0.105
0.155
0.025
0.562
0.060
0.210
0.120
0.110
0.055
0.255
0.050
---
A
K
Q
Z
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
L
R
V
J
G
U
V
Z
D
0.080
2.04
N
STYLE 6:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
FULLPAK and SWITCHMODE are trademarks of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
For additional information, please contact your local
Sales Representative
MBRF30H150CT/D
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