MBRAF360T3G [ONSEMI]
Surface Mount Schottky Power Rectifier; 表面贴装肖特基整流电源
| 型号： | MBRAF360T3G |
| 厂家： | 
ONSEMI |
| 描述： | Surface Mount Schottky Power Rectifier |
| 文件： | 总5页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRAF360T3G
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
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SCHOTTKY BARRIER
RECTIFIER
Features
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
3.0 AMPERE
60 VOLTS
• These are Pb−Free and Halide−Free Devices
Mechanical Charactersistics
• Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
• Weight: 95 mg (approximately)
SMA−FL
CASE 403AA
STYLE 6
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
MARKING DIAGRAM
• Cathode Polarity Band
• Device Meets MSL 1 Requirements
• ESD Ratings: Machine Model = C
ESD Ratings: Human Body Model = 3B
AYWW
RAHG
G
RAH
A
Y
= Specific Device Code
= Assembly Location
= Year
WW
G
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
†
Device
Package
Shipping
MBRAF360T3G
SMA−FL 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
1
Publication Order Number:
July, 2012 − Rev. 0
MBRAF360/D
MBRAF360T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
60
V
RRM
RWM
R
V
V
Average Rectified Forward Current
I
3.0 @ T = 100°C
A
A
A
F(AV)
L
4.0 @ T = 80°C
L
Peak Repetitive Forward Current
I
FRM
(Rated V , Square Wave, 20 kHz) T = 125°C
6
R
C
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
I
FSM
125
Storage Temperature Range
T
− 65 to +150
− 65 to +150
°C
°C
stg
Operating Junction Temperature (Note 1)
T
J
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .
q
JA
D
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
25
Unit
°C/W
°C/W
Thermal Resistance, Junction−to−Lead (Note 2)
R
R
q
JL
Thermal Resistance, Junction−to−Ambient (Note 2)
90
q
JA
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 3)
V
F
V
(i = 3.0 A, T = 25°C)
0.740
F
J
Maximum Instantaneous Reverse Current (Note 3)
i
R
mA
(Rated dc Voltage, T = 25°C)
0.15
10
J
(Rated dc Voltage, T = 100°C)
J
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
10
10
1
T = 150°C
J
T = 175°C
J
T = 175°C
J
1
0.1
T = 150°C
J
T = 100°C
J
T = 25°C
J
T = 25°C
J
T = 100°C
J
0.1
0.01
T = −40°C
T = −40°C
J
J
0.01
0.0
0.2
0.4
0.6
0.8
0.0
0.2
0.4
0.6
0.8
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)
F
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
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2
MBRAF360T3G
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
T = 175°C
J
T = 150°C
J
T = 100°C
J
T = 25°C
J
0
10
20
30
40
50
60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 3. Typical Reverse Current
1.0E+00
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
T = 175°C
J
T = 150°C
J
T = 100°C
J
T = 25°C
J
0
10
20
30
40
50
60
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Figure 4. Maximum Reverse Current
1000
100
10
T = 25°C
J
0
10
20
30
40
50
60
70
V , REVERSE VOLTAGE (V)
R
Figure 5. Typical Capacitance
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3
MBRAF360T3G
100
10
50% Duty Cycle
20%
10%
5%
2%
1
1%
0.1
0.01
0.001
Single Pulse
0.0000001 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 6. Typical Transient Thermal Response, Junction−to−Ambient
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4
MBRAF360T3G
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
MILLIMETERS
DIM MIN
MAX
1.10
1.65
0.30
2.80
5.40
4.60
1.10
D
A
b
c
D
E
0.90
1.25
0.15
2.40
4.80
TOP VIEW
SIDE VIEW
E1 4.00
0.70
L
A
RECOMMENDED
SOLDER FOOTPRINT*
c
SEATING
PLANE
C
5.56
1.76
2X b
1.30
2X
L
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BOTTOM VIEW
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
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MBRAF360/D
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