MBRAF440 [ONSEMI]

Surface Mount Schottky Power Rectifier;
MBRAF440
型号: MBRAF440
厂家: ONSEMI    ONSEMI
描述:

Surface Mount Schottky Power Rectifier

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MBRAF440, NRVBAF440  
Surface Mount  
Schottky Power Rectifier  
This device employs the Schottky Barrier principle in a large area  
metal−to−silicon power diode. State−of−the−art geometry features  
epitaxial construction with oxide passivation and metal overlay  
contact. Ideally suited for low voltage, high frequency rectification, or  
as free wheeling and polarity protection diodes in surface mount  
applications where compact size and weight are critical to the system.  
www.onsemi.com  
SCHOTTKY BARRIER  
RECTIFIER  
Features  
4.0 AMPERE  
40 VOLTS  
Low Profile Package for Space Constrained Applications  
Rectangular Package for Automated Handling  
Highly Stable Oxide Passivated Junction  
150°C Operating Junction Temperature  
Guard−Ring for Stress Protection  
NRV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
SMA−FL  
CASE 403AA  
STYLE 6  
These are Pb−Free and Halide−Free Devices  
MARKING DIAGRAM  
Mechanical Charactersistics  
Case: Epoxy, Molded, Epoxy Meets UL 94, V−0  
Weight: 95 mg (approximately)  
RAF  
AYWWG  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
Lead and Mounting Surface Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Cathode Polarity Band  
Device Meets MSL 1 Requirements  
RAF  
A
Y
WW  
G
= Specific Device Code  
= Assembly Location  
= Year  
= Work Week  
= Pb−Free Package  
ORDERING INFORMATION  
Device  
MBRAF440T3G  
Package  
Shipping  
SMA−FL 5000 / Tape & Reel  
(Pb−Free)  
NRVBAF440T3G SMA−FL 5000 / Tape & Reel  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
December, 2016 − Rev. 3  
MBRAF440T3/D  
MBRAF440, NRVBAF440  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
V
40  
V
RRM  
V
RWM  
V
R
Average Rectified Forward Current  
I
A
A
O
(At Rated V , T = 107°C)  
4.0  
R
L
Non−Repetitive Peak Surge Current  
I
FSM  
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)  
100  
Storage/Operating Case Temperature  
T
, T  
−55 to +150  
−55 to +150  
°C  
°C  
stg  
C
Operating Junction Temperature (Note 1)  
T
J
Voltage Rate of Change  
dv/dt  
V/ms  
(Rated V , T = 25°C)  
10,000  
R
J
ESD Rating  
Human Body Model  
Machine Model  
ESD  
ESD  
3B  
M4  
HBM  
MM  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality  
should not be assumed, damage may occur and reliability may be affected.  
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP /dT < 1/R .  
q
JA  
D
J
THERMAL CHARACTERISTICS  
Symbol  
Value  
Unit  
Characteristic  
Thermal Resistance − Junction−to−Lead (Note 2)  
Thermal Resistance − Junction−to−Ambient (Note 2)  
R
25  
90  
°C/W  
θ
JA  
JL  
R
θ
2. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.  
ELECTRICAL CHARACTERISTICS  
Characteristic  
Symbol  
Value  
Unit  
V
F
T = 25°C  
T = 100°C  
V
Maximum Instantaneous Forward Voltage (Note 3)  
(I = 4.0 A)  
F
J
J
0.485  
0.435  
Maximum Instantaneous Reverse Current  
I
R
T = 25°C  
J
T = 100°C  
J
mA  
0.3  
15  
(V = 40 V)  
R
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Pulse Test: Pulse Width 250 μs, Duty Cycle 2.0%.  
www.onsemi.com  
2
 
MBRAF440, NRVBAF440  
TYPICAL CHARACTERISTICS  
10  
10  
1
1
T = 125°C  
J
T = 125°C  
J
T = 100°C  
J
T = 25°C  
T = −55°C  
T = −55°C  
T = 25°C  
T = 100°C  
J
J
J
J
J
0.1  
0.10  
0.1  
0.10  
0.20  
0.30  
0.40  
0.50  
0.60  
0.20  
0.30  
0.40  
0.50  
0.60  
V , INSTANTANEOUS FORWARD VOLTAGE (VOLTS)  
F
V , MAXIMUM INSTANTANEOUS FORWARD  
F
VOLTAGE (VOLTS)  
Figure 1. Typical Forward Voltage  
Figure 2. Maximum Forward Voltage  
100E−3  
10E−3  
1E−3  
100E−3  
10E−3  
1E−3  
T = 125°C  
J
T = 125°C  
J
T = 100°C  
J
T = 100°C  
J
100E−6  
10E−6  
1E−6  
T = 25°C  
J
T = 25°C  
J
100E−6  
10E−6  
1E−6  
100E−9  
10E−9  
T = −55°C  
T = −55°C  
J
J
1E−9  
100E−12  
0
10  
20  
30  
40  
0
10  
20  
30  
40  
V , REVERSE VOLTAGE (VOLTS)  
R
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 3. Typical Reverse Current  
Figure 4. Maximum Reverse Current  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
1000  
T = 25 °C  
J
SQUARE  
WAVE  
dc  
I
pk  
/I = p  
O
I
pk  
/I = 5  
O
I
/I = 10  
O
pk  
I
pk  
/I = 20  
O
0
0
100  
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
0
5
10  
15  
20  
25  
30  
35  
40  
I , AVERAGE FORWARD CURRENT (AMPS)  
O
V , REVERSE VOLTAGE (VOLTS)  
R
Figure 6. Capacitance  
Figure 5. Forward Power Dissipation  
www.onsemi.com  
3
MBRAF440, NRVBAF440  
8
7
6
5
4
3
2
1
0
R
= 25 °C/W  
q
JL  
DC  
SQUARE WAVE  
0
20  
40  
60  
80  
100  
120  
140  
T , LEAD TEMPERATURE (°C)  
C
Figure 7. Current Derating  
100  
10  
50% Duty Cycle  
20%  
10%  
5%  
2%  
1
1%  
0.1  
0.01  
0.001  
Single Pulse  
0.0000001 0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
t, PULSE TIME (S)  
Figure 8. Typical Transient Thermal Response, Junction−to−Ambient  
www.onsemi.com  
4
MBRAF440, NRVBAF440  
PACKAGE DIMENSIONS  
SMA−FL  
CASE 403AA  
ISSUE A  
E
E1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
MILLIMETERS  
DIM MIN  
MAX  
1.10  
1.65  
0.30  
2.80  
5.40  
4.60  
1.10  
D
A
b
c
D
E
0.90  
1.25  
0.15  
2.40  
4.80  
TOP VIEW  
SIDE VIEW  
E1 4.00  
0.70  
L
A
RECOMMENDED  
SOLDER FOOTPRINT*  
c
SEATING  
PLANE  
C
5.56  
1.76  
2X b  
1.30  
2X  
L
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
BOTTOM VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
NBRAF440T3/D  

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