MC100ELT25DR2 [ONSEMI]
Differential ECL to TTL Translator; 差分ECL至TTL转换器型号: | MC100ELT25DR2 |
厂家: | ONSEMI |
描述: | Differential ECL to TTL Translator |
文件: | 总4页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
The MC10ELT/100ELT25 is a differential ECL to TTL translator.
Because ECL levels are used a +5V, -5.2V (or -4.5V) and ground are
required. The small outline 8-lead SOIC package and the single gate of
the ELT25 makes it ideal for those applications where space,
performance and low power are at a premium. Because the mature
MOSAIC 1.5 process is used, low cost can be added to the list of
features.
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The V
output allows the ELT25 to also be used in a single-ended
BB
input mode. In this mode the V
SO–8
D SUFFIX
CASE 751
output is tied to the IN input for a
BB
non-inverting buffer or the IN input for an inverting buffer. If used the
pin should be bypassed to ground via a 0.01µF capacitor.
V
BB
The ELT25 is available in both ECL standards: the 10ELT is
MARKING DIAGRAM
compatible with MECL 10H logic levels while the 100ELT is
compatible with ECL 100K logic levels. For further information
regarding modeling, refer to AN1596/D “ECLinPS Lite Translator
ELT Family SPICE I/O Model Kit”.
• 2.6ns Typical Propagation Delay
• Internal Input Resistors: Pulldown on D, Pulldown and Pullup on D
8
1
8
HLT25
ALYW
KLT25
ALYW
1
L = Wafer Lot
Y = Year
H = MC10
K = MC100
• Q Output will default LOW with inputs open or at V
W = Work Week
A = Assembly Location
EE
• Differential ECL Inputs
• Small Outline SOIC Package
• 24mA TTL Outputs
*For additional information, see Application Note
AND8002/D
• Flow Through Pinouts
PIN DESCRIPTION
• Moisture Sensitivity Level 1, Indefinite Time Out of Drypack.
For Additional Information, See Application Note AND8003/D
• Flammability Rating: UL–94 code V–0 @ 1/8”,
Oxygen Index 28 to 34
PIN
FUNCTION
D
Q
Diff ECL Inputs
TTL Output
Positive Supply
Negative Supply
Reference Output
Ground
V
V
V
CC
EE
BB
• Transistor Count: 135 devices
LOGIC DIAGRAM AND PINOUT ASSIGNMENT
GND
V
1
2
8
7
V
CC
EE
TTL
D0
Q0
NC
ORDERING INFORMATION
ECL
Device
Package
SO–8
Shipping
D0
BB
3
4
6
5
MC10ELT25D
98 Units / Rail
2500 Units / Reel
98 Units / Rail
MC10ELT25DR2
MC100ELT25D
MC100ELT25DR2
SO–8
SO–8
V
GND
SO–8
2500 Units / Reel
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 3
MC10ELT25/D
MC10ELT25, MC100ELT25
MAXIMUM RATINGS*
Symbol
Parameter
Value
7.0
Unit
V
V
V
V
DC Supply Voltage (Referenced to GND, V
DC Supply Voltage (Referenced to GND, V
Input Voltage
= –5.2)
= 5.0)
CC
EE
–8.0
V
EE
CC
0 to V
CC
V
IN
I
Current Applied to Output in Low Output State
Continuous
50
100
mA
OUT
Surge
T
Operating Temperature Range (In Free-Air)
Storage Temperature Range
–40 to 85
°C
°C
A
T
STG
–55 to +150
θ
Thermal Resistance (Junction–to–Ambient)
Still Air
500lfpm
190
130
°C/W
JA
θ
Thermal Resistance (Junction–to–Case)
41 to 44 ± 5%
°C/W
°C
JC
T
Solder Temperature (<2 to 3 Seconds: 245°C desired)
265
sol
* Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the
Recommended Operating Conditions.
TTL OUTPUT DC CHARACTERISTICS
(V
= 4.5V to 5.5V; V = –4.2V to –5.5V 100ELT, –4.94V to –5.5V 10ELT; T = –40°C to 85°C)
EE A
CC
Symbol
Characteristic
Min
Typ
Max
Unit
V
Condition
= –3.0mA
= 24mA
V
Output HIGH Voltage
Output LOW Voltage
Power Supply Current
Power Supply Current
Power Supply Current
Output Short Circuit Current
2.4
I
I
OH
OH
V
0.5
16
V
OL
OL
I
I
I
I
11
13
15
mA
mA
mA
mA
CCH
CCL
EE
18
21
–150
–60
OS
ECL INPUT DC CHARACTERISTICS
(V
= 4.5V to 5.5V; V = –4.2V to –5.5V 100ELT, –4.94V to –5.5V 10ELT; T = –40°C to 85°C)
EE A
CC
–40°C
0°C
25°C
85°C
Max
150
Symbol
Characteristic
Min
Max
Min
Max
Min
Typ
Max
Min
Unit
µA
I
Input HIGH Current
150
150
150
IH
I
Input LOW Current
0.5
0.5
0.5
0.5
µA
V
IL
V
Common Mode Range
V
+
V
CC
V
+
V
CC
V
+
V
CC
V
+
V
CC
CMR
EE
2.2
EE
2.2
EE
2.2
EE
2.2
1
V
V
Minimum Peak-to-Peak Input
200
200
200
200
mV
mV
PP
Input HIGH Voltage
Input LOW Voltage
Reference Output
10ELT –1230
100ELT –1165
–890
–880
–1170
–1165
–840
–880
–1130
–1165
–810
–880
–1060
–1165
–720
–880
IH
V
V
10ELT –1950 –1500 –1950 –1480 –1950
100ELT –1810 –1475 –1810 –1475 –1810
–1480 –1950 –1445
–1475 –1810 –1475
mV
V
IL
10ELT –1.43
100ELT –1.38
–1.30
–1.26
–1.38
–1.38
–1.27
–1.26
–1.35
–1.38
–1.25
–1.26
–1.31
–1.38
–1.19
–1.26
BB
1. 200mV input guarantees full logic swing at the output.
AC CHARACTERISTICS
(V
= 4.5V to 5.5V; V = –4.2V to –5.5V 100ELT, –4.94V to –5.5V 10ELT; T = –40°C to 85°C)
EE A
CC
–40°C
0°C
25°C
85°C
Min
Symbol
Characteristic
Propagation Delay
Propagation Delay
Min
Max
3.6
Min
1.7
2.6
Max
3.6
Min
1.7
2.6
Typ
Max
3.6
Max
3.6
Unit
ns
Condition
t
1.7
2.6
1.7
2.6
C
C
= 20pF
PLH
L
L
t
4.1
4.1
4.1
4.1
ns
= 20pF
PHL
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MC10ELT25, MC100ELT25
PACKAGE DIMENSIONS
SO–8
D SUFFIX
CASE 751–05
ISSUE P
NOTES:
–A–
J
1. DIMENSIONS A AND B ARE DATUMS AND T IS A
DATUM SURFACE.
2. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
3. DIMENSIONS ARE IN MILLIMETER.
4. DIMENSION A AND B DO NOT INCLUDE MOLD
PROTRUSION.
5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.
6. DIMENSION D DOES NOT INCLUDE MOLD
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 TOTAL IN EXCESS
OF THE D DIMENSION AT MAXIMUM MATERIAL
CONDITION.
8
1
5
4
–B–
M
G
MILLIMETERS
DIM MIN
MAX
5.00
4.00
1.75
0.49
1.25
A
B
C
D
F
4.80
3.80
1.35
0.35
0.40
–T–
SEATING
PLANE
G
J
K
M
P
1.27 BSC
8X D
0.18
0.10
0
0.25
0.25
7
M
S
S
0.25 (0.010)
T B
A
5.80
0.25
6.20
0.50
R
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MC10ELT25, MC100ELT25
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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MC10ELT25/D
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