MC33349 [ONSEMI]
Lithium Battery Protection Circuit for One Cell Battery Packs; 锂电池保护电路一节电池组
| 型号： | MC33349 |
| 厂家： | 
ONSEMI |
| 描述： | Lithium Battery Protection Circuit for One Cell Battery Packs |
| 文件： | 总12页 (文件大小：208K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The MC33349 is a monolithic lithium battery protection circuit that
is designed to enhance the useful operating life of a one cell
rechargeable battery pack. Cell protection features consist of
internally trimmed charge and discharge voltage limits, discharge
current limit detection, and a low current standby mode when the cell
is discharged. This protection circuit requires a minimum number of
external components and is targeted for inclusion within the battery
pack.
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1
PLASTIC PACKAGE
N SUFFIX
• Internally Trimmed Charge and Discharge Voltage Limits
• Discharge Current Limit Detection
CASE 1262
(SOT–23)
• Low Current Standby Mode when Cells are Discharged
• Dedicated for One Cell Applications
• Minimum Components for Inclusion within the Battery Pack
• Available in a Low Profile Surface Mount Package
MARKING DIAGRAMS
1
Typical One Cell Smart Battery Pack
v
= Version code number
xx = Date code
5
PIN CONNECTIONS
1
2
3
6
5
4
DO
P–
Gnd
MC33349
V
cell
CO
C
t
6
4
(Top View)
1
3
2
ORDERING INFORMATION
Seedetailedorderingandshippinginformationinthepackage
dimensions section on page 10 of this data sheet.
Semiconductor Components Industries, LLC, 2000
1
Publication Order Number:
May, 2000 – Rev. 1
MC33349/D
MC33349
MAXIMUM RATINGS
Characteristics
Symbol
Value
Unit
Supply Voltage (Pin 5 to Pin 6)
V
DD
–0.3 to 12
V
Input Voltage
P– Pin Voltage (Pin 5 to Pin 2)
Ct Pin (Pin 4 to Pin 6)
V
V
V
– 28 to V
+ 0.3
+ 0.3
V
V
P–
Ct
DD
DD
DD
Gnd – 0.3 to V
Output Voltage
CO Pin Voltage (Pin 3 to Pin 2)
DO Pin Voltage (Pin 1 to Pin 6)
V
CO
V
DO
V
– 28 to V
+ 0.3
+ 0.3
V
V
DD
DD
DD
Gnd – 0.3 to V
Power Dissipation
P
150
mW
°C
D
Operating Junction Temperature
Storage Temperature
T
–40 to 85
J
T
stg
–55 to 125
°C
ELECTRICAL CHARACTERISTICS (C = 0.01 µF, T = 25°C, for min/max values T is the operating junction temperature range
t
A
A
that applies, unless otherwise noted.)
1
Note
Characteristic
Symbol
Min
Typ
Max
Unit
VOLTAGE SENSING
Cell Charging Cutoff (Pin 5 to Pin 6)
Overvoltage Threshold, V
–3, –4 Suffix
–7 Suffix
Increasing
V
B
DD
DET1
4.2
4.3
150
4.25
4.35
200
4.3
4.4
250
V
V
mV
Overvoltage Hysteresis V
Decreasing
V
V
B
C
DD
HYS1
Cell Discharging Cutoff (Pin 5 to Pin 6)
Undervoltage Threshold, V Decreasing
2.437
55
2.5
80
2.563
105
V
DD
Overvoltage Delay Time (C = 0.01 µF, V
DET2
= 3.6V to 4.5V)
t
ms
B
C
t
DD
(DET1)
Undervoltage Delay Time (V
= 3.6V to 2.4V)
t
7.0
10
13
ms
DD
(DET2)
CURRENT SENSING
Excess Current Threshold (Detect rising edge of P– pin voltage)
V
D
D
DET3
–3, –7 Suffix
–4 Suffix
170
45
200
75
230
105
mV
mV
Short Protection Voltage (V
DD
= 3.0V)
= 3.0V)
V
V
– 1.1
V
– 0.8
V – 0.5
DD
V
SHORT
DD
DD
Current Limit Delay Time (V
DD
t
9.0
–
13
5.0
17
50
ms
µs
D
D
(DET3)
t
(SHORT)
Reset Resistance for Short Protection
R
50
100
150
k
D
SHORT
OUTPUTS
CO Nch On Voltage (I = 50 µA, V
= 4.4V)
V
ol1
–
0.2
3.8
0.2
3.7
0.5
–
V
V
V
V
E
F
O
DD
CO Pch On Voltage (I = –50 µA, V
= 3.9V)
V
oh1
3.4
–
O
DD
DO Nch On Voltage (I = 50 µA, V
= 2.4V)
V
ol2
0.5
–
G
H
O
DD
DO Pch On Voltage (I = –50 µA, V
= 3.9V)
V
oh2
3.4
O
DD
TOTAL DEVICE
Operating Input Voltage
V
DD
1.5
–
10
V
A
Supply Current
I
cell
Operating (V
= 3.9 V, V = 0V)
P–
–
–
3.0
0.3
6.0
0.6
µA
µA
I
I
DD
= 2.0 V)
Standby (V
DD
Minimum Operating Cell Voltage for Zero Volt Charging (Pin 5 to
Pin 2)
V
ST
–
–
1.2
V
A
1. Indicates test circuits shown on next page.
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MC33349
A
B
C
F
G
H
I
A
5
2
6
5
2
6
3
3
1
V
V
V
OSCILLOSCOPE
5
5
2
6
4
V
2
6
1
A
3
V
5
2
6
5
1
A
V
2
6
V
1
D
5
2
6
5
2
6
A
1
A
V
E
5
2
6
3
A
V
Figure 1. Test Circuit Schematics
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MC33349
Vcell
Ct
5
4
Level
Shift
VD1
VD2
10 kOhm
Short Circuit
Delay
Detector
VD3
Rshort
6
1
3
2
Gnd
Do
Co
P–
Figure 2. Detailed Block Diagram
PIN FUNCTION DESCRIPTION
Description
Pin
Symbol
1
DO
This output connects to the gate of the discharge MOSFET allowing it to enable or disable battery pack
discharging.
2
P–
This pin monitors cell discharge current.
The excess current detector sets when the combined voltage drop of the charge MOSFET and the discharge
MOSFET exceeds the discharge current limit threshold voltage, V
. The short circuit detector activates when
(DET3)
V
(P–)
is pulled within 0.8V of the cell voltage by a short circuit.
3
4
5
CO
This output connects to the gate of the charge MOSFET allowing it to enable or disable battery pack charging.
This pin connects to the external capacitor for setting the output delay of the overvoltage detector (VD1).
C
t
V
cell
This input connects to the positive terminal of the cell for voltage monitoring and provides operating bias for the
integrated circuit.
6
Gnd
This is the ground pin of the IC.
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MC33349
TYPICAL CHARACTERISTICS
4.27
4.26
2.54
2.53
4.25
4.24
4.23
4.22
4.21
4.20
2.52
2.51
2.50
2.49
2.48
2.47
–60
–40
–20
0
20
40
60
80
100
–60
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 3. Overvoltage Threshold
vs Temperature
Figure 4. Undervoltage Threshold
vs Temperature
MC33349N–3X
MC33349N–3X / MC33349N–7X
0.210
0.205
0.200
0.195
0.190
2.40
V
DD
= 3.0 V
2.35
2.30
2.25
2.20
2.15
2.10
–60
–40
–20
0
20
40
60
80
100
–60
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 5. Excess Current Threshold
vs Temperature
Figure 6. Short Protection Voltage
vs Temperature
MC33349N–3X / MC33349N–7X
MC33349N–3X
100
90
18
16
14
80
70
60
50
40
30
20
12
10
8
C3 = 0.01µF
V
DD
= 3.6V to 2.4V
6
V
= 3.6V to 4.3V
DD
4
2
–60
–60
–40
–20
0
20
40
60
80
100
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 7. Output Delay of Overvoltage
vs Temperature
Figure 8. Output Delay of Undervoltage
vs Temperature
MC33349N–3X
MC33349N–3X / MC33349N–7X
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5
MC33349
10
20
18
16
14
12
10
8
V
DD
= 3.0 V
V
DD
= 3.0 V
8
6
4
2
6
4
2
0
–60
0
–60
–40
–20
0
20
40
60
80
100
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 9. Output Delay of Excess Current
vs Temperature
Figure 10. Output Delay of Short Circuit
Detector vs Temperature
MC33349N–3X
MC33349N–3X
0.210
4.0
3.5
3.0
0.205
0.200
0.195
0.190
2.5
2.0
1.5
1.0
0.5
0.0
V
V
= 3.9 V
DD
= 0 V
P–
–60
–40
–20
0
20
40
60
80
100
–60
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 11. Overvoltage Threshold Hysteresis
vs Temperature
Figure 12. Operating Current
vs Temperature
MC33349N–3X / MC33349N–7X
MC33349N–3X
0.40
0.35
0.30
0.30
V
DD
= 2.0 V
0.25
0.20
0.15
0.10
0.25
0.20
0.15
0.10
0.05
0.00
I
V
= 50µA
OL
0.05
0.00
= 4.4V
DD
–60
–40
–20
0
20
40
60
80
100
–60
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 13. Standby Current vs Temperature
MC33349N–3X
Figure 14. Cout Nch Driver On Voltage (Vol1)
vs Temperature
MC33349N–3X
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MC33349
3.90
0.30
3.85
3.80
3.75
3.70
0.25
0.20
0.15
0.10
I
V
= –50µA
OH
I
V
= 50µA
3.65
3.60
0.05
0.00
OL
= 3.9V
DD
= 2.4V
DD
–60
–40
–20
0
20
40
60
80
100
–60
–40
–20
0
20
40
60
80
100
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 15. Cout Pch Driver On Voltage (Voh1)
vs Temperature
Figure 16. Dout Nch Driver On Voltage (Vol2)
vs Temperature
MC33349N–3X
MC33349N–3X
10000
1000
100
3.90
I
V
= –50µA
OH
= 3.9V
3.85
3.80
3.75
3.70
DD
10
0
R2 = 1k
3.65
3.60
V
= 3.0V
DD
0.001
0.01
0.1
1
–60
–40
–20
0
20
40
60
80
100
EXTERNAL CAPACITANCE C2 (µF)
T , AMBIENT TEMPERATURE (°C)
A
Figure 17. Dout Pch Driver On Voltage (Voh2)
vs Temperature
Figure 18. Short Protection Delay Time
vs Capacitance C2
MC33349N–3X
MC33349N–3X
25.00
20.00
15.00
10.00
5.00
0.00
2.5
3.0
3.5
SUPPLY VOLTAGE V (V)
4.0
4.5
DD
Figure 19. Excess Current Delay Time vs V
MC33349N–3X
DD
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MC33349
0.210
0.209
4.258
C1 = 0 to 0.68µF
C3 = 0.22µF
C3 = 0.01µF
4.256
4.254
4.252
4.250
C3 = 0.1µF
0.208
0.207
0.206
0.205
0.204
0.203
0.202
4.248
4.246
V
= 3.0V
DD
0
0.5
1
1.5
2
2.5
3
0
200
400
600
800
1000
EXTERNAL RESISTANCE R2(k
)
EXTERNAL RESISTANCE R1( )
Figure 20. Excess Current Threshold vs
External Resistance R2
Figure 21. Overvoltage Threshold vs
External Resistance R1
MC33349N–3X
MC33349N–3X / MC33349N–7X
OPERATING DESCRIPTION
VD1 / Over–Charge Detector
pin goes to a ”Low” level, and the external discharge control
Nch MOSFET turns off. The IC enters a low current standby
mode after detection of an over–discharged voltage byVD2.
Supply current then reduces to approximately 0.3 µA.
During standby mode, only the charger detector operates.
VD2 can only reset after connecting the pack to a charger.
VD1monitorsthevoltageattheV
itexceedstheover–chargedetectorthreshold, V
senses an over–charging condition, the CO pin goes to a
”Low” level, and the external charge control,
Nch–MOSFET turns off.
pin(V ).When
DD
CELL
. VD1
DET1
Resetting VD1 allows resumption of the charging
process. VD1 resets under two conditions, thus, making the
CO pin level ”High.” The first case occurs when the cell
While V
threshold, V
remains under the over–discharge detector
, discharge current can flow through the
DD
DET2
parasitic diode of the external discharge control FET. The
DO level goes ”High” when the cell voltage rises above
voltagedropsbelow”V
–V
.”(V istypically
DET1 HYS1
HYS1
200 mV). Inthesecondcase, disconnectingthechargerfrom
the battery pack can reset VD1 after V drops between
V
due to the charging current through the parasitic
DET2
diode.Connectingachargertothebatterypackwillinstantly
set DO ”High” if this causes V to rise above V
DD
”V ” and ”V
DET1
– V
”.
HYS1
.
DD DET2
DET1
After detecting over–charge, connecting a load to the
batterypackallowsloadcurrenttoflowthroughtheparasitic
diode of the external charge control FET. The CO level goes
When cell voltage equals zero, one can charge the battery
pack if the voltage is greater than the minimum charge
voltage, V
.
ST
Output delay time for the over–discharge detection
)isfixedinternally.Ifthevoltagefaultoccurswithin
”High”whenthecellvoltagedropsbelowV
current draw through the parasitic diode.
duetoload
DET1
(t
VDET2
An external capacitor connected between the Gnd pin and
Ct pin sets the output delay time for over–charge detection.
The external capacitor sets up a delay time from the moment
of over–charge detection to the time CO outputs a signal,
which enables the charge control FET to turn off. If the
voltage fault occurs within the time delay window. CO will
not turn off the charge control FET. The output delay time
can be calculated as follows:
the time delay window, DO will not turn off the discharge
control FET.
A CMOS buffer sets the output of the DO pin to a ”High”
level of V
and a ”Low” level of Gnd.
DD
VD3 / Excess Current Detector, Short Circuit Detector
Both the excess current detector and the short circuit
detector can work when the two control FET’s are on. When
the voltage at the P– pin rises to a value between the short
6
t
[sec]
VDET1
(Ct[F] (VDD[V] 0.7) (0.48 10
)
circuit protection voltage, V
, and the excess current
SHORT
threshold, V
Increasing V
, the excess current detector operates.
higher than V
DET3
A level shifter incorporated in a buffer driver for the CO
pin drives the ”Low” level of CO pin to the P– pin voltage.
enables the short
SHORT
(P–)
circuit detector. The DO pin then goes to a ”Low” level, and
the external discharge control Nch MOSFET turns off.
A CMOS buffer sets the ”High” level of CO pin to V
.
DD
VD2 / Over–Discharge Detector
Outputdelaytimeforexcesscurrentdetection(t )is
VDET3
fixed internally. If the excess current fault occurs within the
time delay window, DO will not turn off the discharge
control FET. However, when the short circuit protector is
VD2monitorsthevoltageattheV
CELL
pin(V
DD)
.When
it drops below the over–discharge detector threshold,
, VD2 senses an over–discharge condition, the DO
V
DET2
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MC33349
–NOTE–
enabled, DO can turn off the discharge control FET. Its delay
time would be approximately 5 µs.
If V
voltage is higher than the over–discharge voltage
, when excess current is detected the IC
is below
when excess current is detected, the IC will enter a
DD
The P– pin has a built–in pull down resistor, typically 100
k , which connects to the Gnd pin. Once an excess current
or short circuit fault is removed, the internal resistor pulls
threshold, V
DET2
will not enter a standby mode. However, if V
DD
V
DET2
standby mode. This will not occur when the short circuit
detector activates.
V
(P–)
to the Gnd pin potential. Therefore, the voltage from
P– to Gnd drops below the current detection thresholds and
DO turns the external MOSFET back on.
Figure 22. Timing Diagram / Operational Description
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MC33349
+
R1
100
C1
0.01µF
5
4
6
MC33349
1
2
C3
0.01µF
3
C2
0.22µF
R2
1k
–
Figure 23. Typical Application Circuit
Technical Notes
R1 and C1 will stabilize a supply voltage to the MC33349. A recommended R1 value is less than 1 k . A larger value of R1
leads to higher detection voltage because of shoot through current into the IC.
R2 and C2 stabilize P– pin voltage. Larger R2 values could possibly disable reset from over–discharge by connecting a charger.
Recommended values are less than 1 k . After an over–charge detection even connecting a battery pack to a system could
probably not allow a system to draw load current if one uses a larger R2C2 time constant. The recommended C2 value is less
than 1µF.
R1 and R2 can operate as a current limiter against setting cell reverse direction or for applying excess charging voltage to the
IC and battery pack. Smaller R1 and R2 values may cause excessive power consumption over the specified power dissipation
rating. Therefore R1+R2 should be more than 1 k .
The time constants R1C1 and R2C2 must have a relation as follows:
R1C1 ≤ R2C2
If the R1C1 time constant for the Vcell pin is larger than the R2C2 time constant for the P– pin, the IC might enter a standby
mode after detecting excess current. This was noted in the operating description of the current detectors.
ORDERING INFORMATION
Overvoltage
Threshold (V)
Undervoltage
Threshold (V)
Current Limit
Threshold (V)
Device
Marking
A1xx*
Reel Size
Tape width
Quantity
MC33349N–3R1
MC33349N–4R1
MC33349N–7R1
4.25
4.25
4.35
2.5
2.5
2.5
0.2
0.075
0.2
A2xx*
7”
8 mm
3000
A0xx*
* ″xx″ denotes the date code marking.
Consult factory for information on other threshold values.
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MC33349
OUTLINE DIMENSIONS
N SUFFIX
PLASTIC PACKAGE
CASE 1262–01
(SOT–23)
ISSUE O
E
M
M
0.05
0.20
C B
PIN 1 INK MARK
IDENTIFIER
NOTES:
1. DIMENSIONS ARE IN MILLIMETERS.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M, 1994.
3. DIMENSION D DOES NOT INCLUDE FLASH OR
PROTRUSIONS. FLASH OR PROTRUSIONS
SHALL NOT EXCEED 0.23 PER SIDE.
4. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
C
1
2
6
5
A
A
5. DIMENSIONS D AND E1 ARE TO BE DETERMINED
AT DATUM PLANE H.
3
4
MILLIMETERS
A1
A
DIM MIN
MAX
1.45
0.15
0.50
0.45
0.20
0.15
3.00
3.00
1.75
E1
A
A1
b
b1
c
c1
D
E
E1
e
0.90
0.00
0.35
0.35
0.09
0.09
2.80
2.60
1.50
B
A
b
0.95
1.90
e1
L
0.25
0
0.55
10
H
L
b1
SECTION A–A
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MC33349
ON Semiconductor and
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withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
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