MC74HC30ADG [ONSEMI]

8-Input NAND Gate;
MC74HC30ADG
型号: MC74HC30ADG
厂家: ONSEMI    ONSEMI
描述:

8-Input NAND Gate

栅 光电二极管 逻辑集成电路 触发器
文件: 总7页 (文件大小:268K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74HC30A  
8-Input NAND Gate  
HighPerformance SiliconGate CMOS  
The MC74HC30 is identical in pinout to the LS30. The device  
inputs are compatible with standard CMOS outputs; with pullup  
resistors, they are compatible with LSTTL outputs.  
http://onsemi.com  
Features  
MARKING  
DIAGRAMS  
Output Drive Capability: 10 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 2 to 6 V  
Low Input Current: 1 mA  
14  
SOIC14  
D SUFFIX  
CASE 751A  
HC30AG  
AWLYWW  
14  
14  
High Noise Immunity Characteristic of CMOS Devices  
These are PbFree Devices  
1
1
1
A
2
14  
1
B
3
TSSOP14  
DT SUFFIX  
CASE 948G  
HC  
C
4
30A  
D
E
F
8
5
Y
Y = ABCDEFGH  
ALYW  
1
6
11  
12  
G
H
A
WL, L  
YY, Y  
= Assembly Location  
= Wafer Lot  
= Year  
PINS 9, 10, 13 = NO CONNECTION  
PIN 14 = V  
CC  
PIN 7 = GND  
WW, W = Work Week  
G or = PbFree Package  
Figure 1. Logic Diagram  
(Note: Microdot may be in either location)  
PIN ASSIGNMENT  
A
B
1
2
14  
V
CC  
13 NC  
C
D
3
4
12  
11  
H
G
E
F
5
6
7
10 NC  
9
8
NC  
Y
GND  
NC = NO CONNECTION  
FUNCTION TABLE  
Output  
Y
Inputs A through H  
All inputs H  
One or more inputs L  
L
H
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 3 of this data sheet.  
© Semiconductor Components Industries, LLC, 2013  
1
Publication Order Number:  
June, 2013 Rev. 1  
MC74HC30A/D  
MC74HC30A  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this highimpedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
0.5 to +7.0  
CC  
V
1.5 to V + 1.5  
V
in  
CC  
V
out  
0.5 to V + 0.5  
V
CC  
I
20  
25  
50  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
DC Supply Current, V and GND Pins  
in  
out  
CC  
CC  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air  
SOIC Package  
TSSOP Package  
500  
TBD  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
stg  
Storage Temperature  
65 to +150  
°C  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress  
ratings only. Functional operation above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Operating Conditions may affect device  
reliability.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
6.0  
V , V  
in out  
V
CC  
V
T
A
55  
+125  
°C  
ns  
t , t  
Input Rise and Fall Time  
(Figure 2)  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
500  
400  
r
f
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
55 to  
25°C  
V
V
CC  
v 85°C  
1.5  
3.15  
4.2  
v 125°C  
1.5  
3.15  
4.2  
Symbol  
Parameter  
Test Conditions  
= 0.1 V or V 0.1 V  
|I | v 20 mA  
Unit  
V
IH  
Minimum HighLevel Input  
V
2.0  
4.5  
6.0  
1.5  
3.15  
4.2  
V
out  
CC  
Voltage  
out  
V
Maximum LowLevel Input  
Voltage  
V
= 0.1 V or V 0.1 V  
2.0  
4.5  
6.0  
0.3  
0.9  
1.2  
0.3  
0.9  
1.2  
0.3  
0.9  
1.2  
V
V
IL  
out  
CC  
|I | v 20 mA  
out  
V
OH  
Minimum HighLevel Output  
Voltage  
V
in  
= V or V  
IL  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
IH  
|I | v 20 mA  
out  
V
in  
= V or V  
|I | v 4.0 mA  
4.5  
6.0  
3.98  
5.48  
3.84  
5.34  
3.70  
5.20  
IH  
IL  
out  
|I | v 5.2 mA  
out  
V
OL  
Maximum LowLevel Output  
Voltage  
V
= V or V  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
in  
IH  
IL  
|I | v 20 mA  
out  
V
= V or V  
|I | v 4.0 mA  
4.5  
6.0  
0.26  
0.26  
0.33  
0.33  
0.40  
0.40  
in  
in  
IH  
IL  
out  
|I | v 5.2 mA  
out  
I
Maximum Input Leakage Current  
V
V
= V or GND  
6.0  
6.0  
0.1  
2
1.0  
20  
1.0  
40  
mA  
mA  
in  
CC  
I
Maximum Quiescent Supply  
Current (per Package)  
= V or GND  
CC  
in  
CC  
I
= 0 mA  
out  
http://onsemi.com  
2
MC74HC30A  
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6 ns)  
L
r
f
Guaranteed Limit  
55 to  
V
V
CC  
25°C  
v 85°C  
v 125°C  
Symbol  
Parameter  
Unit  
t
t
,
Maximum Propagation Delay, Any Input to Output Y  
(Figures 2 and 3)  
2.0  
4.5  
6.0  
175  
35  
30  
220  
44  
37  
265  
53  
45  
ns  
PLH  
PHL  
t
t
,
Maximum Output Transition Time, Any Output  
(Figures 2 and 3)  
2.0  
4.5  
6.0  
75  
15  
13  
95  
19  
16  
110  
22  
19  
ns  
TLH  
THL  
C
Maximum Input Capacitance  
10  
10  
10  
pF  
in  
Typical @ 25°C, V = 5.0 V  
CC  
27  
C
Power Dissipation Capacitance (Per Gate)  
pF  
PD  
t
r
t
f
TEST POINT  
V
CC  
90%  
50%  
10%  
ANY INPUT  
OUTPUT Y  
OUTPUT  
DEVICE  
GND  
t
t
PLH  
PHL  
UNDER  
TEST  
C *  
L
90%  
50%  
10%  
t
t
TLH  
THL  
*Includes all probe and jig capacitance  
Figure 2. Switching Waveforms  
Figure 3. Test Circuit  
1
A
2
B
3
C
4
D
8
Y
5
E
6
F
11  
G
12  
H
Figure 4. Expanded Logic Diagram  
Package  
ORDERING INFORMATION  
Device  
Shipping  
MC74HC30ADG  
SOIC14  
(PbFree)  
55 Units/Rail  
2500/Tape & Reel  
96 Units / Tube  
2500/Tape & Reel  
MC74HC30ADR2G  
MC74HC30ADTG  
MC74HC30ADTR2G  
SOIC14  
(PbFree)  
TSSOP14  
(PbFree)  
TSSOP14  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
3
 
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC14 NB  
CASE 751A03  
ISSUE L  
14  
1
DATE 03 FEB 2016  
SCALE 1:1  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C A  
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
0.10  
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
GENERIC  
MARKING DIAGRAM*  
SOLDERING FOOTPRINT*  
6.50  
14  
14X  
1.18  
XXXXXXXXXG  
AWLYWW  
1
1
XXXXX = Specific Device Code  
A
WL  
Y
= Assembly Location  
= Wafer Lot  
= Year  
1.27  
PITCH  
WW  
G
= Work Week  
= PbFree Package  
14X  
0.58  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
DIMENSIONS: MILLIMETERS  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
STYLES ON PAGE 2  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 1 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
SOIC14  
CASE 751A03  
ISSUE L  
DATE 03 FEB 2016  
STYLE 1:  
STYLE 2:  
CANCELLED  
STYLE 3:  
STYLE 4:  
PIN 1. NO CONNECTION  
2. CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. NO CONNECTION  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. NO CONNECTION  
2. ANODE  
3. ANODE  
4. NO CONNECTION  
5. ANODE  
6. NO CONNECTION  
7. ANODE  
8. ANODE  
9. ANODE  
10. NO CONNECTION  
11. ANODE  
12. ANODE  
13. NO CONNECTION  
14. COMMON CATHODE  
3. CATHODE  
4. NO CONNECTION  
5. CATHODE  
6. NO CONNECTION  
7. CATHODE  
8. CATHODE  
9. CATHODE  
10. NO CONNECTION  
11. CATHODE  
12. CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
STYLE 5:  
STYLE 6:  
STYLE 7:  
STYLE 8:  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. NO CONNECTION  
7. COMMON ANODE  
8. COMMON CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. ANODE/CATHODE  
12. ANODE/CATHODE  
13. NO CONNECTION  
14. COMMON ANODE  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
7. CATHODE  
8. ANODE  
PIN 1. ANODE/CATHODE  
2. COMMON ANODE  
3. COMMON CATHODE  
4. ANODE/CATHODE  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. ANODE/CATHODE  
8. ANODE/CATHODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. COMMON CATHODE  
12. COMMON ANODE  
13. ANODE/CATHODE  
14. ANODE/CATHODE  
PIN 1. COMMON CATHODE  
2. ANODE/CATHODE  
3. ANODE/CATHODE  
4. NO CONNECTION  
5. ANODE/CATHODE  
6. ANODE/CATHODE  
7. COMMON ANODE  
8. COMMON ANODE  
9. ANODE/CATHODE  
10. ANODE/CATHODE  
11. NO CONNECTION  
12. ANODE/CATHODE  
13. ANODE/CATHODE  
14. COMMON CATHODE  
9. ANODE  
10. ANODE  
11. ANODE  
12. ANODE  
13. ANODE  
14. ANODE  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42565B  
SOIC14 NB  
PAGE 2 OF 2  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TSSOP14 WB  
CASE 948G  
ISSUE C  
14  
DATE 17 FEB 2016  
1
SCALE 2:1  
NOTES:  
14X K REF  
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
M
S
S
V
0.10 (0.004)  
T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
S
0.15 (0.006) T U  
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
L
N
U−  
PIN 1  
IDENT.  
F
7
1
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
DETAIL E  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
S
K
0.15 (0.006) T U  
A
V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
K1  
A
B
C
D
F
G
H
J
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION NN  
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
J1  
K
W−  
C
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
0.10 (0.004)  
0
8
0
8
_
_
_
_
SEATING  
PLANE  
T−  
H
G
DETAIL E  
D
GENERIC  
MARKING DIAGRAM*  
14  
SOLDERING FOOTPRINT  
XXXX  
XXXX  
ALYWG  
G
7.06  
1
1
A
L
= Assembly Location  
= Wafer Lot  
Y
W
G
= Year  
= Work Week  
= PbFree Package  
0.65  
PITCH  
(Note: Microdot may be in either location)  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “G”, may  
or may not be present. Some products may  
not follow the Generic Marking.  
01.34X6  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASH70246A  
TSSOP14 WB  
PAGE 1 OF 1  
onsemi and  
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves  
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular  
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation  
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
onsemi,  
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates  
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.  
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. onsemi reserves the right to make changes at any time to any  
products or information herein, without notice. The information herein is provided “asis” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the  
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use  
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MC74HC30NDS

NAND Gate, CMOS, PDIP14
MOTOROLA

MC74HC30NS

NAND Gate
ROCHESTER

MC74HC32A

Quad 2-Input OR Gate
MOTOROLA

MC74HC32A

Quad 2-Input OR Gate
ONSEMI