MC74HC4046B [ONSEMI]
Phase-Locked Loop;型号: | MC74HC4046B |
厂家: | ONSEMI |
描述: | Phase-Locked Loop |
文件: | 总13页 (文件大小:181K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MC74HC4046B
Phase-Locked Loop
High−Performance Silicon−Gate CMOS
The MC74HC4046B is similar in function to the MC14046 Metal
gate CMOS device. The device inputs are compatible with standard
CMOS outputs; with pullup resistors, they are compatible with
LSTTL outputs.
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The HC4046B phase−locked loop contains three phase
comparators, a voltage−controlled oscillator (VCO) and unity gain
op−amp DEM
. The comparators have two common signal inputs,
OUT
COMP , and SIG . Input SIG and COMP can be used directly
IN
IN
IN
IN
SOIC−16
D SUFFIX
CASE 751B
TSSOP−16
DT SUFFIX
CASE 948F
coupled to large voltage signals, or indirectly coupled (with a series
capacitor to small voltage signals). The self−bias circuit adjusts small
voltage signals in the linear region of the amplifier. Phase comparator
1 (an exclusive OR gate) provides a digital error signal PC1
and
OUT
PIN ASSIGNMENT
maintains 90 degrees phase shift at the center frequency between
SIG and COMP signals (both at 50% duty cycle). Phase
IN
IN
PCP
PC1
1
2
16
V
CC
out
comparator 2 (with leading−edge sensing logic) provides digital error
signals PC2 and PCP and maintains a 0 degree phase shift
15 PC3
14 SIG
out
out
OUT
OUT
COMP
VCO
3
4
between SIG and COMP signals (duty cycle is immaterial). The
in
in
IN
IN
linear VCO produces an output signal VCO
whose frequency is
13 PC2
12 R2
11 R1
OUT
out
INH
C1A
out
determined by the voltage of input VCO signal and the capacitor
IN
5
6
and resistors connected to pins C1A, C1B, R1 and R2. The unity gain
op−amp output DEM
with an external resistor is used where the
OUT
C1B
7
8
10 DEM
VCO signal is needed but no loading can be tolerated. The inhibit
out
IN
input, when high, disables the VCO and all op−amps to minimize
standby power consumption.
GND
9
VCO
in
Applications include FM and FSK modulation and demodulation,
frequency synthesis and multiplication, frequency discrimination,
tone decoding, data synchronization and conditioning, voltage−to−
frequency conversion and motor speed control.
MARKING DIAGRAMS
16
HC4046BG
AWLYWW
Features
• Output Drive Capability: 10 LSTTL Loads
1
SOIC−16
• Low Power Consumption Characteristic of CMOS Devices
• Operating Speeds Similar to LSTTL
16
HC40
46B
• Wide Operating Voltage Range for VCO: 3.0 to 6.0 V
• Low Input Current: 1.0 ꢀ A Maximum (except SIG and COMP )
• In Compliance with the Requirements Defined by JEDEC Standard
No. 7 A
ALYWG
IN
IN
G
1
TSSOP−16
• Low Quiescent Current: 80 ꢀ A Maximum (VCO disabled)
• High Noise Immunity Characteristic of CMOS Devices
• Diode Protection on All Inputs
A
L, WL
Y, YY
= Assembly Location
= Wafer Lot
= Year
W, WW = Work Week
G or G
= Pb−Free Package
• Chip Complexity: 279 FETs or 70 Equivalent Gates
(Note: Microdot may be in either location)
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
ORDERING INFORMATION
See detailed ordering and shipping information on page 11 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
1
Publication Order Number:
May, 2018 − Rev. 1
MC74HC4046B/D
MC74HC4046B
Pin No.
Symbol
Name and Function
1
2
3
PCP
PC1
COMP
Phase Comparator Pulse Output
Phase Comparator 1 Output
Comparator Input
OUT
OUT
IN
4
VCO
VCO Output
OUT
5
INH
Inhibit Input
6
7
8
9
C1A
C1B
GND
Capacitor C1 Connection A
Capacitor C1 Connection B
Ground (0 V) V
VCO Input
SS
VCO
IN
10
11
12
13
14
15
16
DEM
Demodulator Output
OUT
R1
R2
PC2
Resistor R1 Connection
Resistor R2 Connection
Phase Comparator 2 Output
Signal Input
Phase Comparator 3 Output
Positive Supply Voltage
OUT
SIG
IN
PC3
OUT
V
CC
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this high−impedance cir-
V
DC Supply Voltage (Referenced to GND)
DC Input Voltage (Referenced to GND)
DC Output Voltage (Referenced to GND)
DC Input Current, per Pin
–0.5 to +7.0
CC
V
–1.5 to V + 1.5
V
in
CC
V
out
–0.5 to V + 0.5
V
CC
I
20
25
mA
mA
mA
mW
°C
in
cuit. For proper operation, V and
in
I
I
DC Output Current, per Pin
out
V
out
should be constrained to the
range GND v (V or V ) v V
.
DC Supply Current, V and GND Pins
50
in
out
CC
CC
CC
Unused inputs must always be
tied to an appropriate logic voltage
P
Power Dissipation in Still Air
Storage Temperature
SOIC Package†
500
D
level (e.g., either GND or V ).
T
stg
–65 to +150
CC
Unused outputs must be left open.
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC Package†
°C
260
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of
these limits are exceeded, device functionality should not be assumed, damage may occur and
reliability may be affected.
†Derating: SOIC Package: –7 mW/°C from 65° to 125°C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
DC Supply Voltage (Referenced to GND)
Min
3.0
2.0
0
Max
6.0
Unit
V
V
CC
V
CC
DC Supply Voltage (Referenced to GND) NON−VCO
DC Input Voltage, Output Voltage (Referenced to GND)
Operating Temperature, All Package Types
6.0
V
V , V
in out
V
CC
V
T
A
–55
+125
°C
ns
t , t
Input Rise and Fall Time
(Pin 5)
V
CC
V
CC
V
CC
= 2.0 V
= 4.5 V
= 6.0 V
0
0
0
1000
500
400
r
f
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
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2
MC74HC4046B
[Phase Comparator Section]
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
V
CC
≤ 85°C
–55 to 25°C
≤ 125°C
Symbol
Parameter
Test Conditions
= 0.1 V or V − 0.1 V
Unit
V
IH
Minimum High−Level Input
Voltage DC Coupled
V
out
2.0
4.5
6.0
1.5
3.15
4.2
1.5
3.15
4.2
1.5
3.15
4.2
V
out
CC
|I | ≤ 20 ꢀ A
SIG , COMP
IN
IN
V
Maximum Low−Level Input
Voltage DC Coupled
V
out
= 0.1 V or V − 0.1 V
2.0
4.5
6.0
0.5
1.35
1.8
0.5
1.35
1.8
0.5
1.35
1.8
V
V
IL
out
CC
|I | ≤ 20 ꢀ A
SIG , COMP
IN
IN
V
OH
Minimum High−Level
Output Voltage
V
in
= V or V
2.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
IH
IL
|I | ≤ 20 ꢀ A
out
PCP
, PCn
OUT
OUT
V
out
|I | ≤ 5.2 mA
out
= V or V
IH
in
IL
|I | ≤ 4.0 mA
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
V
OL
Maximum Low−Level
Output Voltage Qa−Qh
V
out
= 0.1 V or V − 0.1 V
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
out
CC
|I | ≤ 20 ꢀ A
PCP
, PCn
OUT
OUT
V
out
|I | ≤ 5.2 mA
out
= V or V
IH IL
in
|I | ≤ 4.0 mA
4.5
6.0
0.26
0.3
0.33
0.34
0.4
0.4
I
in
Maximum Input Leakage Current
SIG , COMP
V
in
= V or GND
2.0
3.0
4.5
6.0
3.0
8.5
24
4.0
9.0
24
5.0
11.0
27.0
108
ꢀ
A
CC
IN
IN
108
108
I
Maximum Three−State
Leakage Current
Output in High−Impedance State
= V or V
6.0
0.5
5.0
10
ꢀ A
ꢀ A
OZ
V
in
IH
IL
V
= V or GND
out
CC
PC2
OUT
I
Maximum Quiescent Supply Current
(per Package) (VCO disabled)
V
out
= V or GND
6.0
160
160
160
CC
in
CC
|I | = 0 ꢀ A
Pins 3, 5 and 14 at V
CC
Pin 9 at GND; Input Leakage at
Pins 3 and 14 to be excluded
[Phase Comparator Section]
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6.0 ns)
L
r
f
Guaranteed Limit
V
CC
–55 to 25°C
≤ 85°C
≤ 125°C
V
Symbol
Parameter
Unit
t
t
t
t
,
Maximum Propagation Delay, SIG /COMP to PC1
(Figure 1)
2.0
4.5
6.0
175
35
30
220
44
37
265
53
45
ns
PLH
t
IN
IN
OUT
PHL
,
Maximum Propagation Delay, SIG /COMP to PCP
2.0
4.5
6.0
340
68
58
425
85
72
510
102
87
ns
ns
ns
ns
ns
PLH
t
IN
IN
OUT
(Figure 1)
PHL
,
Maximum Propagation Delay, SIG /COMP to PC3
2.0
4.5
6.0
270
54
46
340
68
58
405
81
69
PLH
t
IN
IN
OUT
(Figure 1)
PHL
,
Maximum Propagation Delay, SIG /COMP Output
2.0
4.5
6.0
200
40
34
250
50
43
300
60
51
PLZ
IN
IN
t
Disable Time to PC2
(Figures 2 and 3)
PHZ
OUT
t
,
Maximum Propagation Delay, SIG /COMP Output
2.0
4.5
6.0
230
46
39
290
58
49
345
69
59
PZH
IN
IN
t
Enable Time to PC2
(Figures 2 and 3)
PZL
OUT
t
,
Maximum Output Transition Time
(Figure 1)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
TLH
t
THL
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3
MC74HC4046B
[VCO Section]
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Guaranteed Limit
V
V
CC
≤ 85°C
–55 to 25°C
≤ 125°C
Symbol
Parameter
Test Conditions
= 0.1 V or V − 0.1 V
|I | ≤ 20 ꢀ A
Unit
V
IH
Minimum High−Level
Input Voltage
INH
V
3.0
4.5
6.0
2.1
3.15
4.2
2.1
3.15
4.2
2.1
3.15
4.2
V
out
CC
out
V
Maximum Low−Level
Input Voltage
INH
V
= 0.1 V or V − 0.1 V
3.0
4.5
6.0
0.90
1.35
1.8
0.9
1.35
1.8
0.9
1.35
1.8
V
V
IL
out
CC
|I | ≤ 20 ꢀ A
out
V
OH
Minimum High−Level
Output Voltage
V
in
= V or V
3.0
4.5
6.0
1.9
4.4
5.9
1.9
4.4
5.9
1.9
4.4
5.9
IH
IL
|I | ≤ 20 ꢀ A
out
VCO
OUT
V
in
= V or V
IH
IL
|I | ≤ 4.0 mA
|I | ≤ 5.2 mA
out
4.5
6.0
3.98
5.48
3.84
5.34
3.7
5.2
out
V
OL
Maximum Low−Level
Output Voltage
V
= 0.1 V or V − 0.1 V
3.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
out
CC
|I | ≤ 20 ꢀ A
out
VCO
OUT
V
in
= V or V
IH IL
|I | ≤ 4.0 mA
|I | ≤ 5.2 mA
out
4.5
6.0
0.26
0.3
0.33
0.34
0.4
0.4
out
I
in
Maximum Input Leakage
Current INH, VCO
V
in
= V or GND
6.0
0.1
1.0
1.0
ꢀ
A
CC
IN
Min Max Min Max Min Max
Operating Voltage Range at
INH = V
3.0
4.5
6.0
0.1
0.1
0.1
1.0
2.5
4.0
0.1
0.1
0.1
1.0
2.5
4.0
0.1
0.1
0.1
1.0
2.5
4.0
V
IL
V
VCO
IN
VCO over the range
IN
specified for R1; For linearity
see Fig. 13A, Parallel value of
R1 and R2 should be > 2.7 kꢁ
R1
R2
C1
Resistor Range
Capacitor Range
3.0
4.5
6.0
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
kꢁ
3.0
4.5
6.0
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
3.0
3.0
3.0
300
300
300
3.0
4.5
6.0
40
40
40
No
Limit
pF
[VCO Section]
AC ELECTRICAL CHARACTERISTICS (C = 50 pF, Input t = t = 6.0 ns)
L
r
f
Guaranteed Limit
≤ 85°C
–55 to 25°C
≤ 125°C
V
CC
Min Max Min Max Min Max
V
Symbol
Parameter
Unit
ꢂ
f
/
T
Frequency Stability with
Temperature Changes
(Figures 11A, B, C)
3.0
4.5
6.0
%/K
fo
VCO Center Frequency
(Duty Factor = 50%, R1 = 3 kꢁ, C1 = 39 pF, R2 = infinity)
(See Figures 12A, B, C, D for other conditions)
3.0
4.5
6.0
3
11
13
MHz
%
ꢂ
f
V
C
O
V
C
O
F
r
e
q
u
e
n
c
y
L
i
n
e
a
r
i
t
y
3.0
4.5
6.0
See Figures 13A, B
Typical 50%
∂ VCO Duty Factor at VCO
3.0
4.5
6.0
%
OUT
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MC74HC4046B
[Demodulator Section]
DC ELECTRICAL CHARACTERISTICS
Guaranteed Limit
≤ 85°C
–55 to 25°C
≤ 125°C
V
CC
V
Min Max Min Max Min Max
Symbol
Parameter
Resistor Range
Test Conditions
Unit
RS
At RS > 300 kꢁ the
Leakage Current can
3.0
4.5
6.0
50
50
50
300
300
300
kꢁ
Influence VDEM
OUT
V
OFF
Offset Voltage
Vi = VVCO = 1/2 V ;
CC
Values taken over RS
Range.
3.0
4.5
6.0
See Figure 10
mV
IN
VCO to VDEM
IN
OUT
RD
Dynamic Output
Resistance at DEM
VDEM
= 1/2 V
3.0
4.5
6.0
Typical 25 ꢁ
ꢁ
OUT
CC
OUT
SWITCHING WAVEFORMS
V
CC
SIG
IN
INPUT
V
CC
50%
SIG , COMP
IN
INPUTS
IN
50%
GND
V
CC
GND
COMP
INPUT
t
t
IN
PHL
PLH
50%
GND
90%
50%
PCP , PC1
OUT
PC3
OUT
OUTPUTS
t
PHZ
OUT
t
PZH
V
OH
90%
PC2
OUT
OUTPUT
10%
50%
HIGH
IMPEDANCE
t
t
TLH
THL
Figure 1.
Figure 2.
V
CC
SIG
IN
INPUT
50%
TEST POINT
GND
OUTPUT
V
CC
DEVICE
UNDER
TEST
COMP
INPUT
IN
C *
L
50%
PZL
GND
t
PLZ
t
HIGH
IMPEDANCE
50%
PC2
OUT
OUTPUT
*INCLUDES ALL PROBE AND JIG CAPACITANCE
10%
V
OL
Figure 3.
Figure 4. Test Circuit
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MC74HC4046B
DETAILED CIRCUIT DESCRIPTION
Voltage Controlled Oscillator/Demodulator Output
capacitor which causes the mirror to charge the opposite side
of the capacitor. The output from the internal logic is then
taken to VCO output (Pin 4).
The VCO requires two or three external components to
operate. These are R1, R2, C1. Resistor R1 and Capacitor C1
are selected to determine the center frequency of the VCO
(see typical performance curves Figure 12). R2 can be used
to set the offset frequency with 0 volts at VCO input. For
example, if R2 is decreased, the offset frequency is
increased. If R2 is omitted the VCO range is from 0 Hz. By
increasing the value of R2 the lock range of the PLL is
increased and the gain (volts/Hz) is decreased. Thus, for a
narrow lock range, large swings on the VCO input will cause
less frequency variation.
The input to the VCO is a very high impedance CMOS
input and thus will not load down the loop filter, easing the
filter design. In order to make signals at the VCO input
accessible without degrading the loop performance, the
VCO input voltage is buffered through a unity gain Op−amp
to Demod Output. This Op−amp can drive loads of 50K
ohms or more and provides no loading effects to the VCO
input voltage (see Figure 10).
An inhibit input is provided to allow disabling of the VCO
and all Op−amps (see Figure 5). This is useful if the internal
VCO is not being used. A logic high on inhibit disables the
VCO and all Op−amps, minimizing standby power
consumption.
Internally, the resistors set a current in a current mirror, as
shown in Figure 5. The mirrored current drives one side of
the capacitor. Once the voltage across the capacitor charges
up to V of the comparators, the oscillator logic flips the
ref
V
REF
I
1
+
_
12
CURRENT
MIRROR
I + I = I
R
2
1
2
3
4
VCO
I
2
OUT
VCO
9
+
_
IN
11
I
3
R
1
+
_
DEMOD
10
OUT
C
1
(EXTERNAL)
7
6
V
ref
+
+
INH
5
Figure 5. Logic Diagram for VCO
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MC74HC4046B
The output of the VCO is a standard high speed CMOS
output with an equivalent LS−TTL fan out of 10. The VCO
output is approximately a square wave. This output can
network that enables AC coupling of input signals. If the
signals are not AC coupled, standard 74HC input levels are
required. Both input structures are shown in Figure 6. The
outputs of these comparators are essentially standard 74HC
outputs (comparator 2 is TRI−STATEABLE). In normal
either directly feed the COMP of the phase comparators or
IN
feed external prescalers (counters) to enable frequency
synthesis.
operation V and ground voltage levels are fed to the loop
CC
filter. This differs from some phase detectors which supply
a current to the loop filter and should be considered in the
design. (The MC14046 also provides a voltage).
Phase Comparators
All three phase comparators have two inputs, SIG and
IN
COMP . The SIG and COMP have a special DC bias
IN
IN
IN
V
CC
V
CC
SIG
IN
14
PC2
OUT
13
V
CC
COMP
3
IN
PCP
1
OUT
PC3
15
OUT
PC1
2
OUT
Figure 6. Logic Diagram for Phase Comparators
Phase Comparator 1
between COMP and SIG will increase. At an input
IN
IN
This comparator is a simple XOR gate similar to the
74HC86. Its operation is similar to an overdriven balanced
modulator. To maximize lock range the input frequencies
must have a 50% duty cycle. Typical input and output
waveforms are shown in Figure 7. The output of the phase
detector feeds the loop filter which averages the output
voltage. The frequency range upon which the PLL will lock
onto if initially out of lock is defined as the capture range.
The capture range for phase detector 1 is dependent on the
loop filter design. The capture range can be as large as the
lock range, which is equal to the VCO frequency range.
To see how the detector operates, refer to Figure 7. When
two square wave signals are applied to this comparator, an
output waveform (whose duty cycle is dependent on the
phase difference between the two signals) results. As the
phase difference increases, the output duty cycle increases
and the voltage after the loop filter increases. In order to
achieve lock when the PLL input frequency increases, the
VCO input voltage must increase and the phase difference
frequency equal to f , the VCO input is at 0 V. This
requires the phase detector output to be grounded; hence, the
two input signals must be in phase. When the input
min
frequency is f , the VCO input must be V and the phase
max
CC
detector inputs must be 180 degrees out of phase.
SIG
IN
COMP
IN
PC1
OUT
V
CC
VCO
IN
GND
Figure 7. Typical Waveforms for PLL Using
Phase Comparator 1
The XOR is more susceptible to locking onto harmonics
of the SIG than the digital phase detector 2. For instance,
IN
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7
MC74HC4046B
a signal 2 times the VCO frequency results in the same
will see only VCO leading edges, so the comparator output
will stay low, forcing the VCO to f
output duty cycle as a signal equal to the VCO frequency.
The difference is that the output frequency of the 2f example
is twice that of the other example. The loop filter and VCO
range should be designed to prevent locking on to
harmonics.
.
min
Phase comparator 2 is more susceptible to noise, causing
the PLL to unlock. If a noise pulse is seen on the SIG , the
IN
comparator treats it as another positive edge of the SIG
IN
and will cause the output to go high until the VCO leading
edge is seen, potentially for an entire SIG period. This
would cause the VCO to speed up during that time. When
IN
Phase Comparator 2
This detector is a digital memory network. It consists of
four flip−flops and some gating logic, a three state output
and a phase pulse output as shown in Figure 6. This
comparator acts only on the positive edges of the input
signals and is independent of duty cycle.
using PC , the output of that phase detector would be
1
disturbed for only the short duration of the noise spike and
would cause less upset.
Phase Comparator 3
Phase comparator 2 operates in such a way as to force the
PLL into lock with 0 phase difference between the VCO
output and the signal input positive waveform edges.
Figure 8 shows some typical loop waveforms. First assume
This is a positive edge−triggered sequential phase
detector using an RS flip−flop as shown in Figure 6. When
the PLL is using this comparator, the loop is controlled by
positive signal transitions and the duty factors of SIG and
IN
that SIG is leading the COMP . This means that the
COMP
are not important. It has some similar
IN
IN
IN
VCO’s frequency must be increased to bring its leading edge
into proper phase alignment. Thus the phase detector 2
output is set high. This will cause the loop filter to charge up
the VCO input, increasing the VCO frequency. Once the
characteristics to the edge sensitive comparator. To see how
this detector works, assume input pulses are applied to the
SIG and COMP ’s as shown in Figure 9. When the
IN
IN
SIG leads the COMP , the flop is set. This will charge the
IN
IN
leading edge of the COMP is detected, the output goes
loop filter and cause the VCO to speed up, bringing the
IN
TRI−STATE holding the VCO input at the loop filter
comparator into phase with the SIG . The phase angle
IN
voltage. If the VCO still lags the SIG then the phase
detector will again charge up the VCO input for the time
between the leading edges of both waveforms.
between SIG and COMP varies from 0° to 360° and is
IN
IN
IN
180° at f . The voltage swing for PC is greater than for PC
o 3 2
but consequently has more ripple in the signal to the VCO.
When no SIG is present the VCO will be forced to f as
If the VCO leads the SIG then when the leading edge of
IN
IN
max
the VCO is seen; the output of the phase comparator goes
low. This discharges the loop filter until the leading edge of
opposed to f when PC is used.
min 2
The operating characteristics of all three phase
comparators should be compared to the requirements of the
system design and the appropriate one should be used.
the SIG is detected at which time the output disables itself
IN
again. This has the effect of slowing down the VCO to again
make the rising edges of both waveforms coincidental.
When the PLL is out of lock, the VCO will be running
SIG
IN
either slower or faster than the SIG . If it is running slower
IN
the phase detector will see more SIG rising edges and so
the output of the phase comparator will be high a majority
of the time, raising the VCO’s frequency. Conversely, if the
COMP
PC2
IN
IN
V
CC
OUT
GND
HIGH IMPEDANCE OFF-STATE
VCO is running faster than the SIG , the output of the
IN
VCO
IN
detector will be low most of the time and the VCO’s output
frequency will be decreased.
PCP
OUT
As one can see, when the PLL is locked, the output of
phase comparator 2 will be disabled except for minor
Figure 8. Typical Waveforms for PLL Using
Phase Comparator 2
corrections at the leading edge of the waveforms. When PC
2
is TRI−STATED, the PCP output is high. This output can be
used to determine when the PLL is in the locked condition.
This detector has several interesting characteristics. Over
the entire VCO frequency range there is no phase difference
between the COMP and the SIG . The lock range of the
SIG
COMP
IN
IN
PC3
OUT
VCO
VCC
GND
IN
IN
IN
PLL is the same as the capture range. Minimal power was
consumed in the loop filter since in lock the detector output
Figure 9. Typical Waveform for PLL Using
Phase Comparator 3
is a high impedance. When no SIG is present, the detector
IN
www.onsemi.com
8
MC74HC4046B
TYPICAL CHARACTERISTICS
20
15
10
6.0
5.0
4.0
3.0
2.0
1.0
0
V
R
= 6.0 V,
= 50 kꢁ
CC
V
= 3.0 V, C1 = 100 pF;
CC
S
R2 = ∞; V
= 1/3 V
VCOin
CC
V
R
= 4.5 V,
= 50 kꢁ
CC
V
= 6.0 V,
CC
= 300 kꢁ
S
R
S
5
0
R1 = 300 kꢁ
R1 = 100 kꢁ
V
R
= 4.5 V,
= 300 kꢁ
CC
V
R
= 3.0 V,
= 50 kꢁ
CC
S
S
−5
R1 = 3 kꢁ
−10
V
R
= 3.0 V,
= 300 kꢁ
CC
S
−15
−20
−100
−50
0
50
100
150
0.0
1.0
2.0
3.0
4.0
5.0
6.0
X AXIS LABEL (UNIT)
T , AMBIENT TEMPERATURE (°C)
A
Figure 10. Offset Voltage at Demodulator
Output as a Function of VCOIN and RS
Figure 11A. Frequency Stability vs. Ambient
Temperature: VCC = 3.0 V
20
20
15
10
5
V
= 4.5 V, C1 = 100 pF;
V
CC
= 6.0 V, C1 = 100 pF;
CC
15
10
5
R2 = ∞; V
= 1/2 V
R2 = ∞; V = 1/2 V
VCOin CC
VCOin
CC
R1 = 300 kꢁ
R1 = 100 kꢁ
R1 = 300 kꢁ
R1 = 100 kꢁ
0
0
−5
−10
−5
−10
R1 = 3 kꢁ
R1 = 3 kꢁ
−15
−20
−15
−20
−100
−50
0
50
100
150
−100
−50
0
50
100
150
T , AMBIENT TEMPERATURE (°C)
A
T , AMBIENT TEMPERATURE (°C)
A
Figure 11B. Frequency Stability vs. Ambient
Temperature: VCC = 4.5 V
Figure 11C. Frequency Stability vs. Ambient
Temperature: VCC = 6.0 V
www.onsemi.com
9
MC74HC4046B
TYPICAL CHARACTERISTICS
22
20
18
16
14
70
V
= 6.0 V
CC
V
CC
= 4.5 V
60
50
40
30
20
V
CC
= 4.5 V
V
CC
= 3.0 V
V
CC
= 6.0 V
12
10
8
V
CC
= 3.0 V
6
4
R1 = 3.0 kꢁ
C1 = 39 pF
R1 = 3.0 kꢁ
C1 = 0.1 ꢀ F
10
0
2
0
0
0
1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.0
300
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5 4.0
V
(V)
V
(V)
VCOIN
VCOIN
Figure 12A. VCO Frequency (fVCO) as a
Function of the VCO Input Voltage (VVCOIN
Figure 12B. VCO Frequency (fVCO) as a
Function of the VCO Input Voltage (VVCOIN
)
)
1.4
1.2
1.0
0.8
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
V = 6.0 V
CC
V
= 6.0 V
CC
V
= 4.5 V
CC
V
= 4.5 V
CC
V
= 3.0 V
CC
V
= 3.0 V
CC
0.6
0.4
R1 = 300 kꢁ
C1 = 0.1 ꢀ F
0.2
0
R1 = 300 kꢁ
0.1
0
C1 = 39 pF
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
VCOIN
(V)
V
VCOIN
(V)
Figure 12C. VCO Frequency (fVCO) as a
Function of the VCO Input Voltage (VVCOIN
Figure 12D. VCO Frequency (fVCO) as a
Function of the VCO Input Voltage (VVCOIN
)
)
10
8
ꢂ V = 0.5 V over the V Range: for VCO Linearity
CC
R2 = ∞
ꢂ V = 0.5 V
V
= 4.5 V
C1 = 0.1 ꢀ F
CC
f ′ = (f + f ) / 2
0
1
2
Linearity = (f ′ − f ) / (f ′) x 100%
0
0
0
f
f
2
6
V
= 6.0 V
C1 = 0.1 ꢀ F
CC
0
V
CC
= 6.0 V
C1 = 39 pF
f ′
0
V
= 3.0 V
CC
4
V
= 3.0 V
C1 = 39 pF
CC
C1 = 0.1 ꢀ F
f
1
2
0
V
CC
= 4.5 Vꢃ C1 = 39 pF
−2
10
100
MIN
1/2 Vcc
MAX
R1 (kꢁ)
Figure 13B. Definition of VCO Frequency
Linearity
Figure 13A. Frequency Linearity vs.
R1, C1 and VCC
www.onsemi.com
10
MC74HC4046B
ORDERING INFORMATION
Device
†
Package
Shipping
MC74HC4046BDG
SOIC−16
(Pb−Free)
48 Units / Rail
2500 Units / Reel
2500 Units / Reel
96 Units / Rail
MC74HC4046BDR2G
NLV74HC4046ADR2G*
MC74HC4046BDTG
MC74HC4046BDTR2G
SOIC−16
(Pb−Free)
SOIC−16
(Pb−Free)
TSSOP−16
(Pb−Free)
TSSOP−16
(Pb−Free)
2500 Units / Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
www.onsemi.com
11
MC74HC4046B
PACKAGE DIMENSIONS
TSSOP−16
CASE 948F
ISSUE B
16X KREF
NOTES:
M
S
S
0.10 (0.004)
T U
V
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
S
0.15 (0.006) T U
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD
FLASH. PROTRUSIONS OR GATE BURRS.
MOLD FLASH OR GATE BURRS SHALL NOT
EXCEED 0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE
INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL
NOT EXCEED 0.25 (0.010) PER SIDE.
5. DIMENSION K DOES NOT INCLUDE
DAMBAR PROTRUSION. ALLOWABLE
DAMBAR PROTRUSION SHALL BE 0.08
(0.003) TOTAL IN EXCESS OF THE K
DIMENSION AT MAXIMUM MATERIAL
CONDITION.
K
K1
16
9
2X L/2
J1
SECTION N−N
B
−U−
L
J
PIN 1
IDENT.
N
8
0.25 (0.010)
1
6. TERMINAL NUMBERS ARE SHOWN FOR
REFERENCE ONLY.
7. DIMENSION A AND B ARE TO BE
DETERMINED AT DATUM PLANE −W−.
M
S
0.15 (0.006) T U
A
−V−
MILLIMETERS
DIM MIN MAX
INCHES
MIN MAX
N
A
B
C
4.90
4.30
−−−
5.10 0.193 0.200
4.50 0.169 0.177
F
1.20
−−− 0.047
DETAIL E
D
F
0.05
0.50
0.15 0.002 0.006
0.75 0.020 0.030
G
H
J
J1
K
K1
L
0.65 BSC
0.026 BSC
−W−
0.18
0.09
0.09
0.19
0.19
0.28 0.007 0.011
C
0.20 0.004 0.008
0.16 0.004 0.006
0.30 0.007 0.012
0.25 0.007 0.010
0.10 (0.004)
H
DETAIL E
SEATING
PLANE
−T−
6.40 BSC
0.252 BSC
D
G
M
0
8
0
8
_
_
_
_
SOLDERING FOOTPRINT*
7.06
1
0.65
PITCH
01.36X6
16X
1.26
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
MC74HC4046B
PACKAGE DIMENSIONS
SOIC−16
CASE 751B−05
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
−A−
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD
PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D
DIMENSION AT MAXIMUM MATERIAL CONDITION.
16
9
8
−B−
P 8 PL
M
S
B
0.25 (0.010)
1
MILLIMETERS
INCHES
MIN
0.386
DIM MIN
MAX
MAX
0.393
0.157
0.068
0.019
0.049
A
B
C
D
F
9.80
3.80
1.35
0.35
0.40
10.00
G
4.00 0.150
1.75 0.054
0.49 0.014
1.25 0.016
F
R X 45
K
_
G
J
1.27 BSC
0.050 BSC
0.19
0.10
0
0.25 0.008
0.25 0.004
0.009
0.009
7
K
M
P
R
C
7
0
_
_
_
_
−T−
SEATING
PLANE
5.80
0.25
6.20 0.229
0.50 0.010
0.244
0.019
J
M
D
16 PL
M
S
S
A
0.25 (0.010)
T B
SOLDERING FOOTPRINT*
8X
6.40
16X
1.12
1
16
16X
0.58
1.27
PITCH
8
9
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
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◊
MC74HC4046B/D
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