MC74HC540ADT [ONSEMI]

HC/UH SERIES, 8-BIT DRIVER, INVERTED OUTPUT, PDSO20, TSSOP-20;
MC74HC540ADT
型号: MC74HC540ADT
厂家: ONSEMI    ONSEMI
描述:

HC/UH SERIES, 8-BIT DRIVER, INVERTED OUTPUT, PDSO20, TSSOP-20

驱动器
文件: 总8页 (文件大小:149K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
High–Performance Silicon–Gate CMOS  
The MC74HC540A is identical in pinout to the LS540. The device  
inputs are compatible with Standard CMOS outputs. External pullup  
resistors make them compatible with LSTTL outputs.  
The HC540A is an octal inverting buffer/line driver/line receiver  
designed to be used with 3–state memory address drivers, clock  
drivers, and other bus–oriented systems. This device features inputs  
and outputs on opposite sides of the package and two ANDed  
active–low output enables.  
http://onsemi.com  
MARKING  
DIAGRAMS  
20  
PDIP–20  
N SUFFIX  
CASE 738  
MC74HC540AN  
AWLYYWW  
20  
1
1
The HC540A is similar in function to the HC541A, which has  
non–inverting outputs.  
20  
SOIC WIDE–20  
DW SUFFIX  
CASE 751D  
HC540A  
AWLYYWW  
20  
Output Drive Capability: 15 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS and TTL  
Operating Voltage Range: 2 to 6V  
1
1
A
= Assembly Location  
WL = Wafer Lot  
YY = Year  
Low Input Current: 1µA  
High Noise Immunity Characteristic of CMOS Devices  
In Compliance With the JEDEC Standard No. 7A Requirements  
Chip Complexity: 124 FETs or 31 Equivalent Gates  
LOGIC DIAGRAM  
WW = Work Week  
ORDERING INFORMATION  
Device  
Package  
PDIP–20  
Shipping  
2
3
4
5
6
7
8
9
18  
17  
16  
15  
14  
13  
12  
11  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
Y7  
Y8  
MC74HC540AN  
1440 / Box  
38 / Rail  
MC74HC540ADW  
MC74HC540ADWR2  
SOIC–WIDE  
SOIC–WIDE 1000 / Reel  
Data  
Inputs  
Inverting  
Outputs  
1
Output OE1  
OE2  
PIN 20 = V  
CC  
PIN 10 = GND  
Pinout: 20–Lead Packages (Top View)  
Enables  
19  
V
OE2 Y1  
Y2  
17  
Y3  
16  
Y4  
15  
Y5  
14  
Y6  
13  
Y7  
12  
Y8  
11  
CC  
FUNCTION TABLE  
20  
19  
18  
Inputs  
OE1 OE2  
Output Y  
A
L
L
L
L
L
H
X
X
H
L
H
X
X
H
Z
Z
1
2
3
4
5
6
7
9
8
10  
Z = High Impedance  
X = Don’t Care  
OE1 A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8 GND  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
March, 2000 – Rev. 7  
MC74HC540A/D  
MC74HC540A  
MAXIMUM RATINGS*  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high–impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V  
+ 0.5  
V
in  
CC  
CC  
V
out  
– 0.5 to V  
+ 0.5  
V
I
± 20  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
± 35  
± 75  
out  
V
should be constrained to the  
out  
range GND (V or V  
)
V
CC  
.
DC Supply Current, V  
and GND Pins  
CC  
in out  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air  
Plastic DIP†  
SOIC Package†  
750  
500  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
stg  
Storage Temperature Range  
– 65 to + 150  
C
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds  
Plastic DIP or SOIC Package  
260  
*Maximum Ratings are those values beyond which damage to the device may occur.  
Functional operation should be restricted to the Recommended Operating Conditions.  
†Derating — Plastic DIP: – 10 mW/ C from 65 to 125 C  
SOIC Package: – 7 mW/ C from 65 to 125 C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature Range, All Package Types  
6.0  
V , V  
in out  
V
CC  
V
T
A
– 55 + 125  
C
t , t  
r f  
Input Rise/Fall Time  
(Figure 1)  
V
CC  
V
CC  
V
CC  
= 2.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
500  
400  
ns  
DC CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
V
CC  
V
Symbol  
Parameter  
Condition  
–55 to 25°C 85°C 125°C  
Unit  
V
IH  
Minimum High–Level Input  
Voltage  
V
= 0.1V  
2.0  
3.0  
4.5  
6.0  
1.50  
2.10  
3.15  
4.20  
1.50  
2.10  
3.15  
4.20  
1.50  
2.10  
3.15  
4.20  
V
out  
|I | 20µA  
out  
V
Maximum Low–Level Input  
Voltage  
V
= V – 0.1V  
CC  
2.0  
3.0  
4.5  
6.0  
0.50  
0.90  
1.35  
1.80  
0.50  
0.90  
1.35  
1.80  
0.50  
0.90  
1.35  
1.80  
V
V
IL  
out  
|I | 20µA  
out  
V
OH  
Minimum High–Level Output  
Voltage  
V
= V  
IL  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
in  
|I | 20µA  
out  
V
in  
= V  
|I | 3.6mA  
out  
3.0  
4.5  
6.0  
2.48  
3.98  
5.48  
2.34  
3.84  
5.34  
2.20  
3.70  
5.20  
IL  
|I | 6.0mA  
out  
|I | 7.8mA  
out  
V
OL  
Maximum Low–Level Output  
Voltage  
V
= V  
2.0  
4.5  
6.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
in  
IH  
|I | 20µA  
out  
V
= V  
= V  
|I | 3.6mA  
out  
3.0  
4.5  
6.0  
0.26  
0.26  
0.26  
0.33  
0.33  
0.33  
0.40  
0.40  
0.40  
in  
in  
IH  
|I | 6.0mA  
out  
|I | 7.8mA  
out  
I
in  
Maximum Input Leakage Current  
V
or GND  
6.0  
±0.1  
±1.0  
±1.0  
µA  
CC  
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2
MC74HC540A  
DC CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
V
CC  
V
Symbol  
Parameter  
Condition  
–55 to 25°C  
85°C  
±5.0  
125°C  
±10.0  
Unit  
I
Maximum Three–State Leakage  
Current  
Output in High Impedance State  
6.0  
±0.5  
µA  
OZ  
V
= V or V  
in  
IL  
IH  
or GND  
V
out  
= V  
CC  
or GND  
I
Maximum Quiescent Supply  
Current (per Package)  
V
= V  
6.0  
4
40  
160  
µA  
CC  
in  
CC  
= 0µA  
I
out  
NOTE: Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High–Speed CMOS Data Book  
(DL129/D).  
AC CHARACTERISTICS (C = 50 pF, Input t = t = 6 ns)  
L
r
f
Guaranteed Limit  
V
CC  
V
Symbol  
Parameter  
–55 to 25°C  
85°C  
125°C  
Unit  
t
t
,
Maximum Propagation Delay, Input A to Output Y  
(Figures 1 and 3)  
2.0  
3.0  
4.5  
6.0  
80  
30  
18  
15  
100  
40  
23  
120  
55  
28  
ns  
PLH  
PHL  
20  
25  
t
t
,
Maximum Propagation Delay, Output Enable to Output Y  
(Figures 2 and 4)  
2.0  
3.0  
4.5  
6.0  
110  
45  
25  
140  
60  
31  
165  
75  
38  
ns  
ns  
ns  
PLZ  
PHZ  
21  
26  
31  
t
t
,
Maximum Propagation Delay, Output Enable to Output Y  
(Figures 2 and 4)  
2.0  
3.0  
4.5  
6.0  
110  
45  
25  
140  
60  
31  
165  
75  
38  
PZL  
PZH  
21  
26  
31  
t
t
,
Maximum Output Transition Time, Any Output  
(Figures 1 and 3)  
2.0  
3.0  
4.5  
6.0  
60  
22  
12  
10  
75  
28  
15  
13  
90  
34  
18  
15  
TLH  
THL  
C
Maximum Input Capacitance  
10  
15  
10  
15  
10  
15  
pF  
pF  
in  
C
Maximum Three–State Output Capacitance (Output in High  
Impedance State)  
out  
NOTE: For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON  
Semiconductor High–Speed CMOS Data Book (DL129/D).  
Typical @ 25°C, V  
= 5.0 V, V  
= 0 V  
EE  
CC  
C
Power Dissipation Capacitance (Per Buffer)*  
pF  
35  
PD  
2
* Used to determine the no–load dynamic power consumption: P = C  
D
ON Semiconductor High–Speed CMOS Data Book (DL129/D).  
V
f + I  
V
. For load considerations, see Chapter 2 of the  
PD CC  
CC CC  
SWITCHING WAVEFORMS  
V
CC  
t
f
t
r
OE1 or OE2  
50%  
50%  
V
CC  
90%  
50%  
10%  
GND  
INPUT A  
t
t
PZL PLZ  
HIGH  
IMPEDANCE  
GND  
OUTPUT Y  
OUTPUT Y  
t
t
PLH  
PHL  
50%  
10%  
90%  
90%  
50%  
10%  
V
OL  
t
t
PZH PHZ  
OUTPUT Y  
V
OH  
50%  
t
t
TLH  
THL  
HIGH  
IMPEDANCE  
Figure 1.  
Figure 2.  
http://onsemi.com  
3
MC74HC540A  
TEST CIRCUITS  
TEST  
TEST  
POINT  
POINT  
CONNECT TO V WHEN  
CC  
1kΩ  
OUTPUT  
OUTPUT  
TESTING t  
CONNECT TO GND WHEN  
TESTING t and t  
AND t .  
PZL  
PLZ  
DEVICE  
UNDER  
TEST  
DEVICE  
UNDER  
TEST  
.
PHZ PZH  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 3.  
Figure 4.  
PIN DESCRIPTIONS  
INPUTS  
outputs are enabled and the device functions as an inverter.  
When a hgih voltage is applied to either input, the outputs  
assume the high impedance state.  
A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8,  
9) — Data input pins. Data on these pins appear in inverted  
form on the corresponding Y outputs, when the outputs are  
enabled.  
OUTPUTS  
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,  
13, 12, 11) — Device outputs. Depending upon the state of  
the output enable pins, these outputs are either inverting  
outputs or high–impedance outputs.  
CONTROLS  
OE1, OE2 (PINS 1, 19) — Output enables (active–low).  
When a low voltage is applied to both of these pins, the  
LOGIC DETAIL  
To 7 Other  
Inverters  
V
CC  
One of Eight  
Inverters  
INPUT A  
OUTPUT Y  
OE1  
OE2  
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4
MC74HC540A  
PACKAGE DIMENSIONS  
PDIP–20  
N SUFFIX  
PLASTIC DIP PACKAGE  
CASE 738–03  
ISSUE E  
–A–  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
20  
1
11  
10  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH.  
B
L
C
INCHES  
DIM MIN MAX  
1.070 25.66 27.17  
MILLIMETERS  
MIN MAX  
A
B
C
D
E
F
1.010  
0.240  
0.150  
0.015  
0.050 BSC  
0.050  
0.260  
0.180  
0.022  
6.10  
3.81  
0.39  
1.27 BSC  
1.27  
6.60  
4.57  
0.55  
–T–  
SEATING  
PLANE  
K
M
0.070  
1.77  
N
E
G
0.100 BSC  
2.54 BSC  
J
0.008  
0.110  
0.300 BSC  
0.015  
0.140  
0.21  
2.80  
7.62 BSC  
0
0.51  
0.38  
3.55  
G
F
K
L
M
N
J 20 PL  
D 20 PL  
M
M
0.25 (0.010)  
T B  
0
15  
0.040  
15  
1.01  
0.020  
M
M
0.25 (0.010)  
T A  
SO–20  
DW SUFFIX  
CASE 751D–05  
ISSUE F  
D
A
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
20  
11  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
E
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION SHALL  
BE 0.13 TOTAL IN EXCESS OF B DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
1
10  
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
B
20X B  
A
A1  
B
C
D
E
e
H
h
2.35  
0.10  
0.35  
0.23  
12.65 12.95  
7.40 7.60  
1.27 BSC  
10.05 10.55  
M
S
S
T
0.25  
A
B
A
0.25  
0.50  
0
0.75  
0.90  
7
L
SEATING  
PLANE  
18X e  
A1  
C
T
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5
MC74HC540A  
PACKAGE DIMENSIONS  
TSSOP–20  
DT SUFFIX  
CASE 948E–02  
ISSUE A  
20X K REF  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
M
S
S
0.10 (0.004)  
T U  
V
S
Y14.5M, 1982.  
0.15 (0.006) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS. MOLD  
FLASH OR GATE BURRS SHALL NOT EXCEED  
0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL NOT  
EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL IN  
EXCESS OF THE K DIMENSION AT MAXIMUM  
MATERIAL CONDITION.  
K
K1  
20  
11  
2X L/2  
J J1  
B
L
–U–  
PIN 1  
IDENT  
SECTION N–N  
1
10  
0.25 (0.010)  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
N
S
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
0.15 (0.006) T U  
M
A
–V–  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN  
MAX  
0.260  
0.177  
0.047  
0.006  
0.030  
A
B
C
6.40  
4.30  
–––  
6.60 0.252  
4.50 0.169  
1.20  
N
–––  
D
F
0.05  
0.50  
0.15 0.002  
0.75 0.020  
F
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
DETAIL E  
0.27  
0.09  
0.09  
0.19  
0.19  
0.37  
0.011  
0.015  
0.008  
0.006  
0.012  
0.010  
0.20 0.004  
0.16 0.004  
0.30 0.007  
0.25 0.007  
–W–  
C
6.40 BSC  
0.252 BSC  
G
D
M
0
8
0
8
H
DETAIL E  
0.100 (0.004)  
–T– SEATING  
PLANE  
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6
MC74HC540A  
Notes  
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7
MC74HC540A  
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are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes  
withoutfurthernoticetoanyproductsherein. SCILLCmakesnowarranty,representationorguaranteeregardingthesuitabilityofitsproductsforanyparticular  
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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or  
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MC74HC540A/D  

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ONSEMI

MC74HC540ADW

Octal 3-State Inverting Buffer/Line Driver/Line Receiver
MOTOROLA

MC74HC540ADW

Octal 3-State Inverting Buffer/Line Driver/Line Receiver
ONSEMI

MC74HC540ADWG

Octal 3−State Inverting Buffer/Line Driver/Line Receiver High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC540ADWR

IC,BUFFER/DRIVER,SINGLE,8-BIT,HC-CMOS,SOP,20PIN,PLASTIC
ONSEMI

MC74HC540ADWR2

Octal 3-State Inverting Buffer/Line Driver/Line Receiver
ONSEMI

MC74HC540ADWR2G

Octal 3−State Inverting Buffer/Line Driver/Line Receiver High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC540AF

Octal 3−State Inverting Buffer/Line Driver/Line Receiver High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC540AFEL

Octal 3−State Inverting Buffer/Line Driver/Line Receiver High−Performance Silicon−Gate CMOS
ONSEMI

MC74HC540AFELG

Octal 3−State Inverting Buffer/Line Driver/Line Receiver High−Performance Silicon−Gate CMOS
ONSEMI