MC74HCT259ADG [ONSEMI]

8-Bit Addressable Latch 1-of-8 Decoder;
MC74HCT259ADG
型号: MC74HCT259ADG
厂家: ONSEMI    ONSEMI
描述:

8-Bit Addressable Latch 1-of-8 Decoder

光电二极管 逻辑集成电路 触发器
文件: 总9页 (文件大小:243K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74HCT259A  
8-Bit Addressable Latch  
1-of-8 Decoder with LSTTL  
Inputs  
HighPerformance SiliconGate CMOS  
http://onsemi.com  
The MC74HCT259A is identical in pinout to the LS259. The device  
inputs are compatible with standard CMOS and LSTTL outputs.  
The HCT259A has four modes of operation as shown in the mode  
selection table. In the addressable latch mode, the data on Data In is  
written into the addressed latch. The addressed latch follows the data  
input with all nonaddressed latches remaining in their previous  
states. In the memory mode, all latches remain in their previous state  
and are unaffected by the Data or Address inputs. In the oneofeight  
decoding or demultiplexing mode, the addressed output follows the  
state of Data In with all other outputs in the LOW state. In the Reset  
mode all outputs are LOW and unaffected by the address and data  
inputs. When operating the HCT259A as an addressable latch,  
changing more than one bit of the address could impose a transient  
wrong address. Therefore, this should only be done while in the  
memory mode.  
MARKING  
DIAGRAMS  
16  
SOIC16  
D SUFFIX  
CASE 751B  
1
HCT259AG  
AWLYWW  
16  
1
16  
HCT  
259A  
ALYWG  
G
TSSOP16  
DT SUFFIX  
CASE 948F  
16  
1
1
A
= Assembly Location  
= Wafer Lot  
WL, L  
YY, Y  
= Year  
Features  
WW, W = Work Week  
G or G  
= PbFree Package  
Output Drive Capability: 10 LSTTL Loads  
Outputs Directly Interface to CMOS, NMOS, and TTL  
Operating Voltage Range: 4.5 to 5.5 V  
Low Input Current: 1 mA  
High Noise Immunity Characteristic of CMOS Devices  
These are PbFree Devices  
(Note: Microdot may be in either location)  
PIN ASSIGNMENT  
A0  
A1  
A2  
Q0  
Q1  
Q2  
1
2
3
4
5
6
7
8
16  
V
CC  
15 RESET  
14 ENABLE  
13 DATA IN  
12 Q7  
11 Q6  
10 Q5  
Q3  
GND  
9
Q4  
MODE SELECTION TABLE  
Enable Reset  
Mode  
L
H
L
H
H
L
Addressable Latch  
Memory  
8Line Demultiplexer  
Reset  
H
L
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 6 of this data sheet.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
April, 2011 Rev. 3  
MC74HCT259A/D  
MC74HCT259A  
1
2
3
4
5
6
7
9
LATCH SELECTION TABLE  
A0  
A1  
A2  
Q0  
Q1  
Q2  
Q3  
Q4  
ADDRESS  
INPUTS  
Address Inputs  
B
C
A
Latch Addressed  
NONINVERTING  
OUTPUTS  
L
L
L
L
H
H
L
L
H
H
L
H
L
H
L
H
L
H
Q0  
Q1  
Q2  
Q3  
Q4  
Q5  
Q6  
Q7  
13  
10  
11  
DATA IN  
Q5  
Q6  
L
L
12  
H
H
H
H
Q7  
15  
14  
RESET  
PIN 16 = V  
CC  
PIN 8 = GND  
ENABLE  
Figure 1. Logic Diagram  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this highimpedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
0.5 to +7.0  
V
V
CC  
V
0.5 to V + 0.5  
in  
CC  
V
out  
0.5 to V + 0.5  
V
CC  
I
20  
25  
50  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
DC Supply Current, V and GND Pins  
in  
out  
CC  
CC  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
D
Power Dissipation in Still Air,  
SOIC Package  
TSSOP Package  
500  
450  
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
stg  
Storage Temperature  
65 to + 150  
°C  
V
ESD  
ESD Withstand Voltage  
V
Human Body Model (Note 1)  
Machine Model (Note 2)  
>2000  
>200  
I
Latchup Performance Above V and Below GND at  
100  
mA  
Latchup  
DD  
125°C (Note 3)  
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress  
ratings only. Functional operation above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Operating Conditions may affect device  
reliability.  
1. Tested to EIA / JESD22A114A.  
2. Tested to EIA / JESD22A115A.  
3. Tested to EIA / JESD78.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
4.5  
0
Max  
Unit  
V
V
CC  
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
Input Rise and Fall Time (Figure 2)  
5.5  
V , V  
in out  
V
CC  
V
T
A
55  
0
+125  
500  
°C  
ns  
t , t  
r
f
http://onsemi.com  
2
 
MC74HCT259A  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
55 to  
V
V
CC  
25°C  
v 85°C  
v 125°C  
Symbol  
Parameter  
Test Conditions  
= 0.1 V or V 0.1 V  
Unit  
V
IH  
Minimum HighLevel Input  
V
4.5  
5.5  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
V
out  
CC  
Voltage  
|I | v 20 mA  
out  
V
IL  
Maximum LowLevel Input  
V
out  
= 0.1 V or V 0.1 V  
4.5  
5.5  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
V
V
CC  
Voltage  
|I | v 20 mA  
out  
V
OH  
Minimum HighLevel Output  
V
in  
= V or V  
4.5  
5.5  
4.4  
5.4  
4.4  
5.4  
4.4  
5.4  
IH  
IL  
Voltage  
|I | v 20 mA  
out  
V
in  
= V or V  
|I | v 5.2 mA  
out  
4.5  
3.98  
3.84  
3.70  
IH  
IL  
V
OL  
Maximum LowLevel Output  
V
in  
= V or V  
4.5  
5.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IH  
IL  
Voltage  
|I | v 20 mA  
out  
V
in  
= V or V  
|I | v 5.2 mA  
out  
4.5  
5.5  
0.26  
0.1  
0.33  
1.0  
0.40  
1.0  
IH  
IL  
I
in  
Maximum Input Leakage  
Current  
V
in  
= V or GND  
mA  
mA  
CC  
I
Maximum Quiescent Supply  
Current (per Package)  
V
in  
= V or GND  
5.5  
4
40  
160  
CC  
CC  
I
= 0 mA  
out  
DI  
CC  
Additional Quiescent Supply  
Current  
V
V
I
= 2.4V, Any One Input  
in  
in  
55°C  
25 to 125°C  
2.4  
= V or GND, Other Inputs  
CC  
2.9  
= 0mA  
mA  
5.5  
out  
http://onsemi.com  
3
MC74HCT259A  
AC ELECTRICAL CHARACTERISTICS (V = 4.5 to 5.5 V, C = 50 pF, Input t = t = 6 ns)  
CC  
L
r
f
Guaranteed Limit  
55 to  
25°C  
v 85°C  
v 125°C  
Symbol  
Parameter  
Unit  
t
t
t
,
Maximum Propagation Delay, Data to Output  
(Figures 2 and 7)  
32  
32  
32  
22  
15  
10  
32  
42  
45  
45  
32  
22  
10  
ns  
PLH  
t
PHL  
,
Maximum Propagation Delay, Address Select to Output  
(Figures 3 and 7)  
40  
40  
26  
19  
10  
ns  
ns  
ns  
ns  
pF  
PLH  
t
PHL  
,
Maximum Propagation Delay, Enable to Output  
(Figures 4 and 7)  
PLH  
t
PHL  
t
Maximum Propagation Delay, Reset to Output  
(Figures 5 and 7)  
PHL  
t
,
Maximum Output Transition Time, Any Output  
(Figures 2 and 7)  
TLH  
t
THL  
C
Maximum Input Capacitance  
in  
Typical @ 25°C, V = 5.0 V  
CC  
30  
C
Power Dissipation Capacitance (Per Package)  
pF  
PD  
TIMING REQUIREMENTS (V = 4.5 to 5.5 V, Input t = t = 6 ns)  
CC  
r
f
Guaranteed Limit  
55 to  
25°C  
v 85°C  
19  
v 125°C  
Symbol  
Parameter  
Unit  
t
su  
Minimum Setup Time, Address or Data to Enable  
(Figure 6)  
15  
22  
ns  
t
Minimum Hold Time, Enable to Address or Data  
(Figure 6)  
1
1
1
ns  
ns  
h
t
w
Minimum Pulse Width, Reset or Enable  
(Figure 4 or 5)  
15  
19  
22  
http://onsemi.com  
4
MC74HCT259A  
SWITCHING WAVEFORMS  
3.0V  
GND  
DATA IN  
3.0V  
GND  
3.0V  
GND  
1.3 V  
1.3 V  
t
t
f
r
ADDRESS  
3.0 V  
DATA IN  
90%  
1.3 V  
10%  
SELECT  
GND  
t
t
PHL  
PLH  
90%  
1.3 V  
10%  
t
t
PLH  
PHL  
50%  
OUTPUT Q  
OUTPUT Q  
50%  
t
t
THL  
TLH  
Figure 2.  
Figure 3.  
3.0 V  
GND  
3.0V  
GND  
3.0V  
GND  
DATA IN  
ENABLE  
DATA IN  
RESET  
t
t
w
w
t
w
V
CC  
1.3 V  
1.3 V 1.3 V  
1.3 V  
GND  
t
t
PHL  
PLH  
t
PHL  
50%  
50%  
OUTPUT Q  
OUTPUT Q  
Figure 4.  
Figure 5.  
TEST POINT  
OUTPUT  
DATA IN  
OR  
3.0V  
DEVICE  
UNDER  
TEST  
1.3 V  
ADDRESS  
SELECT  
GND  
3.0V  
GND  
C *  
L
t
t
h(H)  
h(L)  
t
su  
t
su  
ENABLE  
1.3 V  
*Includes all probe and jig capacitance  
Figure 6.  
Figure 7. Test Circuit  
http://onsemi.com  
5
MC74HCT259A  
13  
4
5
6
DATA INPUT  
D
D
D
Q0  
Q1  
Q2  
7
9
D
D
D
D
D
Q3  
Q4  
Q5  
Q6  
Q7  
A0  
ADDRESS  
INPUTS  
3 TO 8  
A1  
A2  
DECODER  
10  
11  
12  
14  
ENABLE  
15  
RESET  
Figure 8. Expanded Logic Diagram  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74HCT259ADG  
SOIC16  
(PbFree)  
48 Units / Rail  
2500 Tape & Reel  
2500 Tape & Reel  
MC74HCT259ADR2G  
MC74HCT259ADTR2G  
SOIC16  
(PbFree)  
TSSOP16*  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*This package is inherently PbFree.  
http://onsemi.com  
6
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
SOIC16  
CASE 751B05  
ISSUE K  
DATE 29 DEC 2006  
SCALE 1:1  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
A−  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS A AND B DO NOT INCLUDE MOLD  
PROTRUSION.  
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE.  
5. DIMENSION D DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR PROTRUSION  
SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
16  
9
8
B−  
P 8 PL  
M
S
B
0.25 (0.010)  
1
MILLIMETERS  
INCHES  
MIN  
0.386  
DIM MIN  
MAX  
MAX  
0.393  
0.157  
0.068  
0.019  
0.049  
A
B
C
D
F
9.80  
3.80  
1.35  
0.35  
0.40  
10.00  
G
4.00 0.150  
1.75 0.054  
0.49 0.014  
1.25 0.016  
F
R X 45  
K
_
G
J
1.27 BSC  
0.050 BSC  
0.19  
0.10  
0
0.25 0.008  
0.25 0.004  
0.009  
0.009  
7
K
M
P
R
C
7
0
_
_
_
_
T−  
SEATING  
PLANE  
5.80  
0.25  
6.20 0.229  
0.50 0.010  
0.244  
0.019  
J
M
D
16 PL  
M
S
S
A
0.25 (0.010)  
T B  
STYLE 1:  
STYLE 2:  
STYLE 3:  
STYLE 4:  
PIN 1. COLLECTOR  
2. BASE  
3. EMITTER  
4. NO CONNECTION  
5. EMITTER  
6. BASE  
7. COLLECTOR  
8. COLLECTOR  
9. BASE  
10. EMITTER  
11. NO CONNECTION  
12. EMITTER  
13. BASE  
PIN 1. CATHODE  
2. ANODE  
3. NO CONNECTION  
4. CATHODE  
5. CATHODE  
6. NO CONNECTION  
7. ANODE  
8. CATHODE  
9. CATHODE  
10. ANODE  
11. NO CONNECTION  
12. CATHODE  
13. CATHODE  
14. NO CONNECTION  
15. ANODE  
PIN 1. COLLECTOR, DYE #1  
2. BASE, #1  
3. EMITTER, #1  
4. COLLECTOR, #1  
5. COLLECTOR, #2  
6. BASE, #2  
PIN 1. COLLECTOR, DYE #1  
2. COLLECTOR, #1  
3. COLLECTOR, #2  
4. COLLECTOR, #2  
5. COLLECTOR, #3  
6. COLLECTOR, #3  
7. COLLECTOR, #4  
8. COLLECTOR, #4  
9. BASE, #4  
10. EMITTER, #4  
11. BASE, #3  
12. EMITTER, #3  
13. BASE, #2  
7. EMITTER, #2  
8. COLLECTOR, #2  
9. COLLECTOR, #3  
10. BASE, #3  
11. EMITTER, #3  
12. COLLECTOR, #3  
13. COLLECTOR, #4  
14. BASE, #4  
SOLDERING FOOTPRINT  
14. COLLECTOR  
15. EMITTER  
16. COLLECTOR  
14. EMITTER, #2  
15. BASE, #1  
16. EMITTER, #1  
15. EMITTER, #4  
16. COLLECTOR, #4  
8X  
6.40  
16. CATHODE  
16X  
1.12  
STYLE 5:  
STYLE 6:  
STYLE 7:  
PIN 1. SOURCE N‐CH  
PIN 1. DRAIN, DYE #1  
2. DRAIN, #1  
3. DRAIN, #2  
4. DRAIN, #2  
5. DRAIN, #3  
6. DRAIN, #3  
7. DRAIN, #4  
8. DRAIN, #4  
9. GATE, #4  
PIN 1. CATHODE  
2. CATHODE  
3. CATHODE  
4. CATHODE  
5. CATHODE  
6. CATHODE  
7. CATHODE  
8. CATHODE  
9. ANODE  
2. COMMON DRAIN (OUTPUT)  
3. COMMON DRAIN (OUTPUT)  
4. GATE P‐CH  
5. COMMON DRAIN (OUTPUT)  
6. COMMON DRAIN (OUTPUT)  
7. COMMON DRAIN (OUTPUT)  
8. SOURCE P‐CH  
1
16  
16X  
0.58  
9. SOURCE P‐CH  
10. SOURCE, #4  
11. GATE, #3  
12. SOURCE, #3  
13. GATE, #2  
14. SOURCE, #2  
15. GATE, #1  
16. SOURCE, #1  
10. ANODE  
11. ANODE  
12. ANODE  
13. ANODE  
14. ANODE  
15. ANODE  
16. ANODE  
10. COMMON DRAIN (OUTPUT)  
11. COMMON DRAIN (OUTPUT)  
12. COMMON DRAIN (OUTPUT)  
13. GATE N‐CH  
14. COMMON DRAIN (OUTPUT)  
15. COMMON DRAIN (OUTPUT)  
16. SOURCE N‐CH  
1.27  
PITCH  
8
9
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASB42566B  
SOIC16  
PAGE 1 OF 1  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding  
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically  
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the  
rights of others.  
© Semiconductor Components Industries, LLC, 2019  
www.onsemi.com  
MECHANICAL CASE OUTLINE  
PACKAGE DIMENSIONS  
TSSOP16  
CASE 948F01  
ISSUE B  
16  
DATE 19 OCT 2006  
1
SCALE 2:1  
16X KREF  
NOTES:  
M
S
S
0.10 (0.004)  
T U  
V
1. DIMENSIONING AND TOLERANCING PER  
ANSI Y14.5M, 1982.  
S
0.15 (0.006) T U  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH. PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE DAMBAR  
PROTRUSION SHALL BE 0.08 (0.003) TOTAL  
IN EXCESS OF THE K DIMENSION AT  
MAXIMUM MATERIAL CONDITION.  
K
K1  
16  
9
2X L/2  
J1  
SECTION NN  
B
U−  
L
J
PIN 1  
IDENT.  
N
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
8
0.25 (0.010)  
1
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE W.  
M
S
0.15 (0.006) T U  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
A
V−  
N
A
4.90  
4.30  
−−−  
5.10 0.193 0.200  
4.50 0.169 0.177  
B
F
C
1.20  
−−− 0.047  
D
F
0.05  
0.50  
0.15 0.002 0.006  
0.75 0.020 0.030  
DETAIL E  
G
H
J
J1  
K
K1  
L
0.65 BSC  
0.026 BSC  
0.18  
0.09  
0.09  
0.19  
0.19  
0.28 0.007 0.011  
W−  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
C
0.10 (0.004)  
6.40 BSC  
0.252 BSC  
DETAIL E  
H
SEATING  
PLANE  
T−  
M
0
8
0
8
_
_
_
_
D
G
GENERIC  
MARKING DIAGRAM*  
SOLDERING FOOTPRINT  
7.06  
16  
XXXX  
XXXX  
ALYW  
1
1
XXXX = Specific Device Code  
A
L
= Assembly Location  
= Wafer Lot  
Y
W
= Year  
= Work Week  
0.65  
PITCH  
G or G = PbFree Package  
*This information is generic. Please refer to  
device data sheet for actual part marking.  
PbFree indicator, “G” or microdot “ G”,  
may or may not be present.  
01.36X6  
16X  
1.26  
DIMENSIONS: MILLIMETERS  
Electronic versions are uncontrolled except when accessed directly from the Document Repository.  
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.  
DOCUMENT NUMBER:  
DESCRIPTION:  
98ASH70247A  
TSSOP16  
PAGE 1 OF 1  
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