MC74HCT541AFG [ONSEMI]

Octal 3−State Non−Inverting Buffer/Line Driver/ Line Receiver With LSTTL−Compatible Inputs; 八路三态非反相缓冲器/线路驱动器/线接收器输入通道兼容输入
MC74HCT541AFG
型号: MC74HCT541AFG
厂家: ONSEMI    ONSEMI
描述:

Octal 3−State Non−Inverting Buffer/Line Driver/ Line Receiver With LSTTL−Compatible Inputs
八路三态非反相缓冲器/线路驱动器/线接收器输入通道兼容输入

总线驱动器 总线收发器 逻辑集成电路 光电二极管
文件: 总8页 (文件大小:109K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74HCT541A  
Octal 3−State Non−Inverting  
Buffer/Line Driver/  
Line Receiver With  
LSTTL−Compatible Inputs  
http://onsemi.com  
MARKING DIAGRAMS  
High−Performance Silicon−Gate CMOS  
The MC74HCT541A is identical in pinout to the LS541. This  
device may be used as a level converter for interfacing TTL or NMOS  
outputs to high speed CMOS inputs.  
The HCT541A is an octal non−inverting buffer/line driver/line  
receiver designed to be used with 3−state memory address drivers,  
clock drivers, and other bus−oriented systems. This device features  
inputs and outputs on opposite sides of the package and two ANDed  
active−low output enables.  
PDIP−20  
N SUFFIX  
CASE 738  
20  
1
MC74HCT541AN  
AWLYYWWG  
1
Features  
20  
Output Drive Capability: 15 LSTTL Loads  
TTL/NMOS−Compatible Input Levels  
Outputs Directly Interface to CMOS, NMOS and TTL  
Operating Voltage Range: 4.5 to 5.5 V  
Low Input Current: 1mA  
In Compliance With the JEDEC Standard No. 7A Requirements  
Chip Complexity: 134 FETs or 33.5 Equivalent Gates  
Pb−Free Packages are Available*  
SOIC−20WB  
DW SUFFIX  
CASE 751D  
HCT541A  
AWLYYWWG  
1
1
20  
1
TSSOP−20  
DT SUFFIX  
CASE 948E  
HCT  
541A  
ALYWG  
G
LOGIC DIAGRAM  
2
3
4
5
6
7
8
9
18  
17  
16  
15  
14  
13  
12  
11  
A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8  
Y1  
Y2  
Y3  
Y4  
Y5  
Y6  
Y7  
Y8  
1
20  
1
SOEIAJ−20  
F SUFFIX  
CASE 967  
74HCT541A  
AWLYWWG  
Data  
Inputs  
Non−Inverting  
Outputs  
1
A
= Assembly Location  
WL, L = Wafer Lot  
YY, Y = Year  
WW, W = Work Week  
G or G = Pb−Free Package  
(Note: Microdot may be in either location)  
1
Output OE1  
OE2  
PIN 20 = V  
CC  
PIN 10 = GND  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Enables  
19  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
June, 2006 − Rev. 5  
MC74HCT541A/D  
MC74HCT541A  
PINOUT: 20−LEAD PACKAGES  
FUNCTION TABLE  
Inputs  
V
OE2 Y1  
Y2  
17  
Y3  
16  
Y4  
15  
Y5  
14  
Y6  
13  
Y7  
12  
Y8  
11  
CC  
20  
19  
18  
Output Y  
OE1 OE2  
A
L
L
L
L
L
H
X
X
L
H
Z
Z
H
X
X
H
1
2
3
4
5
6
7
9
8
10  
Z = High Impedance  
X = Don’t Care  
OE1 A1  
A2  
A3  
A4  
A5  
A6  
A7  
A8 GND  
(Top View)  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage due  
to high static voltages or electric  
fields. However, precautions must be  
taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V + 0.5  
V
in  
CC  
V
– 0.5 to V + 0.5  
V
out  
CC  
I
20  
35  
75  
mA  
mA  
mA  
mW  
in  
circuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
CC  
DC Supply Current, V and GND Pins  
in  
out  
CC  
CC  
Unused inputs must always be tied  
to an appropriate logic voltage level  
P
Power Dissipation in Still Air Plastic DIP†  
750  
500  
D
SOIC Package†  
(e.g., either GND or V ). Unused  
CC  
outputs must be left open.  
T
Storage Temperature Range  
– 65 to + 150  
260  
_C  
_C  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
Plastic DIP or SOIC Package  
L
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress  
ratings only. Functional operation above the Recommended Operating Conditions is not implied.  
Extended exposure to stresses above the Recommended Operating Conditions may affect device  
reliability.  
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C  
SOIC Package: – 7 mW/_C from 65_ to 125_C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
4.5  
0
Max  
Unit  
V
V
DC Supply Voltage (Referenced to GND)  
5.5  
CC  
V , V  
in out  
DC Input Voltage, Output Voltage  
(Referenced to GND)  
V
V
CC  
T
Operating Temperature Range, All Package Types  
Input Rise/Fall Time (Figure 1)  
– 55  
0
+ 125  
500  
_C  
ns  
A
t , t  
r
f
http://onsemi.com  
2
MC74HCT541A  
DC CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
V
CC  
V
Symbol  
Parameter  
Condition  
= 0.1V or V − 0.1V  
|I | 20mA  
−55 to 25°C 85°C 125°C Unit  
V
Minimum High−Level Input Voltage  
V
out  
4.5  
5.5  
2.0  
2.0  
2.0  
2.0  
2.0  
2.0  
V
V
V
IH  
out  
CC  
V
Maximum Low−Level Input Voltage  
Minimum High−Level Output Voltage  
V
out  
= 0.1V or V − 0.1V  
4.5  
5.5  
0.8  
0.8  
0.8  
0.8  
0.8  
0.8  
IL  
CC  
|I | 20mA  
out  
V
V
in  
= V or V  
4.5  
5.5  
4.4  
5.4  
4.4  
5.4  
4.4  
5.4  
OH  
IH  
IL  
|I | 20mA  
out  
V
= V or V  
|I | 6.0mA  
out  
4.5  
3.98  
3.84  
3.70  
in  
IH  
IL  
IL  
V
Maximum Low−Level Output Voltage  
V
in  
= V or V  
4.5  
5.5  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
OL  
IH  
|I | 20mA  
out  
V
= V or V  
|I | 6.0mA  
4.5  
5.5  
5.5  
0.26  
0.1  
0.33  
1.0  
0.40  
1.0  
in  
in  
IH  
IL  
out  
I
Maximum Input Leakage Current  
Maximum 3−State Leakage Current  
V
= V or GND  
mA  
mA  
in  
CC  
I
I
Output in High Impedance State  
= V or V  
0.5  
5.0  
10.0  
OZ  
V
in  
IL  
IH  
V
= V or GND  
out  
CC  
Maximum Quiescent Supply Current  
(per Package)  
V
in  
= V or GND  
5.5  
4
40  
160  
mA  
CC  
CC  
I
= 0mA  
out  
DI  
Additional Quiescent Supply Current  
V
V
I
= 2.4V, Any One Input  
−55°C  
25 to 125°C  
2.4  
CC  
in  
in  
= V or GND, Other Inputs  
CC  
2.9  
= 0mA  
5.5  
mA  
out  
1. Information on typical parametric values can be found in Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
2. Total Supply Current = I + ΣDI  
.
CC  
CC  
AC CHARACTERISTICS (V = 5.0V, C = 50 pF, Input t = t = 6 ns)  
CC  
L
r
f
Guaranteed Limit  
Symbol  
Parameter  
−55 to 25°C  
85°C  
125°C Unit  
t
t
t
,
Maximum Propagation Delay, Input A to Output Y  
(Figures 1 and 3)  
23  
30  
30  
12  
28  
32  
38  
38  
18  
ns  
ns  
ns  
ns  
PLH  
t
PHL  
,
Maximum Propagation Delay, Output Enable to Output Y  
(Figures 2 and 4)  
34  
34  
15  
PLZ  
t
PHZ  
,
Maximum Propagation Delay, Output Enable to Output Y  
(Figures 2 and 4)  
PZL  
t
PZH  
t
,
Maximum Output Transition Time, Any Output  
(Figures 1 and 3)  
TLH  
t
THL  
C
Maximum Input Capacitance  
10  
15  
10  
15  
10  
15  
pF  
pF  
in  
C
out  
Maximum 3−State Output Capacitance (Output in High Impedance State)  
NOTE:For propagation delays with loads other than 50 pF, and information on typical parametric values, see Chapter 2 of the ON  
Semiconductor High−Speed CMOS Data Book (DL129/D).  
Typical @ 25°C, V = 5.0 V  
CC  
55  
f + I V . For load considerations, see Chapter 2 of the  
CC CC  
C
Power Dissipation Capacitance (Per Buffer)*  
pF  
PD  
2
* Used to determine the no−load dynamic power consumption: P = C  
V
D
PD CC  
ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
http://onsemi.com  
3
MC74HCT541A  
SWITCHING WAVEFORMS  
t
f
t
r
3.0V  
GND  
90%  
1.3V  
INPUT A  
10%  
t
t
PHL  
PLH  
90%  
1.3V  
10%  
OUTPUT Y  
t
t
THL  
TLH  
Figure 1.  
3.0V  
OE1 or OE2  
OUTPUT Y  
1.3V  
1.3V  
GND  
t
t
PLZ  
PZL  
HIGH  
IMPEDANCE  
1.3V  
10%  
90%  
V
V
OL  
t
t
PHZ  
PZH  
OH  
OUTPUT Y  
1.3V  
HIGH  
IMPEDANCE  
Figure 2.  
TEST CIRCUITS  
TEST  
POINT  
TEST  
POINT  
CONNECT TO V WHEN  
.
PZL  
CC  
TESTING t AND t  
1kW  
OUTPUT  
OUTPUT  
PLZ  
DEVICE  
UNDER  
TEST  
DEVICE  
UNDER  
TEST  
CONNECT TO GND WHEN  
TESTING t and t  
.
PZH  
PHZ  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 3.  
Figure 4.  
http://onsemi.com  
4
MC74HCT541A  
PIN DESCRIPTIONS  
INPUTS  
outputs are enabled and the device functions as a  
non−inverting buffer. When a high voltage is applied to  
either input, the outputs assume the high impedance state.  
A1, A2, A3, A4, A5, A6, A7, A8 (PINS 2, 3, 4, 5, 6, 7, 8,  
9) — Data input pins. Data on these pins appear in  
non−inverted form on the corresponding Y outputs, when  
the outputs are enabled.  
OUTPUTS  
Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8 (PINS 18, 17, 16, 15, 14,  
13, 12, 11) — Device outputs. Depending upon the state of  
the output enable pins, these outputs are either  
non−inverting outputs or high−impedance outputs.  
CONTROLS  
OE1, OE2 (PINS 1, 19) — Output enables (active−low).  
When a low voltage is applied to both of these pins, the  
LOGIC DETAIL  
To 7 Other  
Buffers  
V
CC  
One of Eight  
Buffers  
INPUT A  
OUTPUT Y  
OE1  
OE2  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74HCT541AN  
MC74HCT541ANG  
PDIP−20  
18 Units / Rail  
38 Units / Rail  
PDIP−20  
(Pb−Free)  
MC74HCT541ADW  
MC74HCT541ADWG  
SOIC−20  
SOIC−20  
(Pb−Free)  
MC74HCT541ADWR2  
MC74HCT541ADWR2G  
SOIC−20  
1000 / Tape & Reel  
SOIC−20  
(Pb−Free)  
MC74HCT541ADTR2  
MC74HCT541ADTR2G  
MC74HCT541AFG  
TSSOP−20*  
TSSOP−20*  
2500 / Tape & Reel  
40 Units / Rail  
SOEIAJ−20  
(Pb−Free)  
MC74HCT541AFEL  
MC74HCT541AFELG  
SOEIAJ−20  
2000 / Tape & Reel  
SOEIAJ−20  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*These packages are inherently Pb−Free.  
http://onsemi.com  
5
MC74HCT541A  
PACKAGE DIMENSIONS  
PDIP−20  
N SUFFIX  
CASE 738−03  
ISSUE E  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
−A−  
2. CONTROLLING DIMENSION: INCH.  
3. DIMENSION L TO CENTER OF LEAD WHEN  
FORMED PARALLEL.  
4. DIMENSION B DOES NOT INCLUDE MOLD  
FLASH.  
20  
1
11  
10  
B
INCHES  
DIM MIN MAX  
1.070 25.66  
MILLIMETERS  
L
C
MIN  
MAX  
27.17  
6.60  
4.57  
0.55  
A
B
C
D
E
F
1.010  
0.240  
0.150  
0.015  
0.260  
0.180  
0.022  
6.10  
3.81  
0.39  
0.050 BSC  
1.27 BSC  
−T−  
SEATING  
PLANE  
K
0.050  
0.070  
1.27  
1.77  
G
J
0.100 BSC  
2.54 BSC  
M
0.008  
0.110  
0.015  
0.140  
0.21  
2.80  
0.38  
3.55  
N
E
K
L
0.300 BSC  
7.62 BSC  
G
F
M
N
0
0.020  
15  
0.040  
0
_
0.51  
15  
1.01  
J 20 PL  
_
_
_
D 20 PL  
M
M
B
0.25 (0.010)  
T
M
M
A
0.25 (0.010)  
T
SO−20 WB  
DW SUFFIX  
CASE 751D−05  
ISSUE G  
NOTES:  
1. DIMENSIONS ARE IN MILLIMETERS.  
2. INTERPRET DIMENSIONS AND TOLERANCES  
PER ASME Y14.5M, 1994.  
D
A
q
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
PROTRUSION.  
20  
11  
4. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE.  
5. DIMENSION B DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF B  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
E
1
10  
MILLIMETERS  
DIM MIN  
MAX  
2.65  
0.25  
0.49  
0.32  
12.95  
7.60  
A
A1  
B
C
D
E
2.35  
0.10  
0.35  
0.23  
12.65  
7.40  
B
20X B  
M
S
S
B
T
0.25  
A
e
1.27 BSC  
H
h
10.05  
0.25  
0.50  
0
10.55  
0.75  
0.90  
7
A
L
q
_
_
SEATING  
PLANE  
18X e  
A1  
C
T
http://onsemi.com  
6
MC74HCT541A  
PACKAGE DIMENSIONS  
TSSOP−20  
DT SUFFIX  
CASE 948E−02  
ISSUE B  
NOTES:  
20X K REF  
1. DIMENSIONING AND TOLERANCING  
PER ANSI Y14.5M, 1982.  
2. CONTROLLING DIMENSION:  
MILLIMETER.  
M
S
S
V
0.10 (0.004)  
T
U
S
U
0.15 (0.006) T  
K
3. DIMENSION A DOES NOT INCLUDE  
MOLD FLASH, PROTRUSIONS OR GATE  
BURRS. MOLD FLASH OR GATE BURRS  
SHALL NOT EXCEED 0.15 (0.006) PER  
SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION  
SHALL NOT EXCEED 0.25 (0.010) PER  
SIDE.  
K1  
20  
11  
2X L/2  
J J1  
B
L
−U−  
PIN 1  
IDENT  
SECTION N−N  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
1
10  
0.25 (0.010)  
N
S
0.15 (0.006) T  
U
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
M
A
−V−  
N
MILLIMETERS  
INCHES  
DIM MIN  
MAX  
6.60  
4.50  
1.20  
0.15  
0.75  
MIN  
MAX  
0.260  
0.177  
F
A
B
6.40  
4.30  
−−−  
0.252  
0.169  
−−− 0.047  
0.002  
0.020  
0.026 BSC  
0.011  
0.004  
0.004  
0.007  
0.007  
DETAIL E  
C
D
0.05  
0.50  
0.006  
0.030  
−W−  
F
C
G
H
0.65 BSC  
0.27  
0.09  
0.09  
0.19  
0.19  
0.37  
0.20  
0.16  
0.30  
0.25  
0.015  
0.008  
0.006  
0.012  
0.010  
J
G
D
J1  
K
H
DETAIL E  
0.100 (0.004)  
K1  
L
6.40 BSC  
0.252 BSC  
0
−T− SEATING  
PLANE  
M
0
8
8
_
_
_
_
http://onsemi.com  
7
MC74HCT541A  
PACKAGE DIMENSIONS  
SOEIAJ−20  
F SUFFIX  
CASE 967−01  
ISSUE A  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
L
20  
11  
E
Q
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD  
FLASH OR PROTRUSIONS AND ARE MEASURED  
AT THE PARTING LINE. MOLD FLASH OR  
PROTRUSIONS SHALL NOT EXCEED 0.15 (0.006)  
PER SIDE.  
1
H
E
E
_
M
4. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
L
1
10  
5. THE LEAD WIDTH DIMENSION (b) DOES NOT  
INCLUDE DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08 (0.003)  
TOTAL IN EXCESS OF THE LEAD WIDTH  
DIMENSION AT MAXIMUM MATERIAL CONDITION.  
DAMBAR CANNOT BE LOCATED ON THE LOWER  
RADIUS OR THE FOOT. MINIMUM SPACE  
BETWEEN PROTRUSIONS AND ADJACENT LEAD  
TO BE 0.46 ( 0.018).  
DETAIL P  
Z
D
VIEW P  
e
A
c
MILLIMETERS  
INCHES  
MIN MAX  
−−− 0.081  
DIM MIN  
MAX  
A
−−−  
0.05  
0.35  
0.15  
12.35  
5.10  
2.05  
A
1
A
b
1
0.20 0.002  
0.50 0.014  
0.25 0.006  
12.80 0.486  
5.45 0.201  
0.008  
0.020  
0.010  
0.504  
0.215  
b
c
M
0.10 (0.004)  
0.13 (0.005)  
D
E
e
1.27 BSC  
0.050 BSC  
H
7.40  
0.50  
1.10  
8.20 0.291  
0.85 0.020  
1.50 0.043  
0.323  
0.033  
0.059  
E
L
L
E
M
Q
0
0.70  
−−−  
10  
0.90 0.028  
10  
0.035  
0
_
_
_
_
1
Z
0.81  
−−− 0.032  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
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MC74HCT541A/D  

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