MC74VHC1GT126MU1TCG [ONSEMI]
Noninverting 3-State Buffer;
| 型号： | MC74VHC1GT126MU1TCG |
| 厂家： | 
ONSEMI |
| 描述： | Noninverting 3-State Buffer 驱动 光电二极管 逻辑集成电路 |
| 文件： | 总15页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MC74VHC1G126,
MC74VHC1GT126
Noninverting 3-State Buffer
The MC74VHC1G126 / MC74VHC1GT126 is a single gate
noninverting 3−state buffer in tiny footprint packages. The
MC74VHC1G126 has CMOS−level input thresholds while the
MC74VHC1GT126 has TTL−level input thresholds.
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The internal circuit is composed of three stages, including a buffered
3−state output which provides high noise immunity and stable output.
The input structures provide protection when voltages up to 5.5 V
are applied, regardless of the supply voltage. This allows the device to
be used to interface 5 V circuits to 3 V circuits. The output structures
MARKING
DIAGRAMS
SC−88A
DF SUFFIX
CASE 419A
XX MG
G
also provide protection when V = 0 V and when the output voltage
CC
exceeds V . These input and output structures help prevent device
CC
destruction caused by supply voltage − input/output voltage mismatch,
battery backup, hot insertion, etc.
SC−74A
XXX MG
DBV SUFFIX
CASE 318BQ
Features
G
• Designed for 2.0 V to 5.5 V V Operation
CC
• 3.5 ns t at 5 V (typ)
PD
5
• Inputs/Outputs Over−Voltage Tolerant up to 5.5 V
TSOP−5
DT SUFFIX
CASE 483
XX MG
• I
Supports Partial Power Down Protection
• Source/Sink 8 mA at 3.0 V
OFF
5
G
1
1
• Available in SC−88A, SC−74A, TSOP−5, SOT−553, SOT−953 and
UDFN6 Packages
SOT−553
XV5 SUFFIX
CASE 463B
• Chip Complexity < 100 FETs
• NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
XX MG
G
SOT−953
P5 SUFFIX
CASE 527AE
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
X M
1
Compliant
OE
A
EN
UDFN6
1.45 x 1.0
CASE 517AQ
Y
XM
1
Figure 1. Logic Symbol
UDFN6
1.0 x 1.0
CASE 517BX
X M
1
XX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
November, 2018 − Rev. 19
MC74VHC1G126/D
MC74VHC1G126, MC74VHC1GT126
V
V
A
OE
1
CC
CC
OE
1
2
3
6
5
V
CC
5
5
1
A
2
GND
2
A
NC
Y
GND
3
OE
3
Y
Y
4
4
GND
4
SOT−953
(SC−88A/SOT−553/
TSOP−5/ SC−74A)
UDFN6
Figure 2. Pinout (Top View)
PIN ASSIGNMENT (SOT−953)
PIN ASSIGNMENT
(SC−88A/SOT−553/ TSOP−5/SC−74A)
PIN ASSIGNMENT (UDFN)
Pin
Function
Pin
Function
Pin
Function
1
OE
1
A
1
OE
2
3
4
5
A
GND
Y
2
3
4
5
GND
OE
Y
2
3
4
5
6
A
GND
Y
V
CC
V
CC
NC
V
CC
FUNCTION TABLE
Input
Output
A
OE
H
Y
L
L
H
H
H
Z
X
L
X = Don’t Care
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2
MC74VHC1G126, MC74VHC1GT126
MAXIMUM RATINGS
Symbol
Characteristics
Value
Unit
V
CC
DC Supply Voltage
TSOP−5, SC−88A (NLV)
SC−74A, SC−88A, UDFN6, SOT−553, SOT−953
−0.5 to +7.0
−0.5 to +6.5
V
V
DC Input Voltage
TSOP−5, SC−88A (NLV)
−0.5 to +7.0
−0.5 to +6.5
V
V
IN
SC−74A, SC−88A, UDFN6, SOT−553, SOT−953
DC Output Voltage
TSOP−5, SC−88A (NLV)
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
−0.5 to V + 0.5
V
OUT
CC
−0.5 to +7.0
−0.5 to +7.0
Power−Down Mode (V = 0 V)
CC
DC Output Voltage
SC−74A, SC−88A, UDFN6, SOT−553, SOT−953
Active−Mode (High or Low State)
−0.5 to V + 0.5
−0.5 to +6.5
−0.5 to +6.5
V
CC
Tri−State Mode (Note 1)
Power−Down Mode (V = 0 V)
CC
I
DC Input Diode Current
V
< GND
< GND
−20
20
mA
mA
mA
mA
°C
IK
IN
I
DC Output Diode Current
V
OUT
OK
I
DC Output Source/Sink Current
DC Supply Current per Supply Pin or Ground Pin
Storage Temperature Range
25
OUT
I
or I
50
CC
GND
T
−65 to +150
260
STG
T
Lead Temperature, 1 mm from Case for 10 secs
Junction Temperature Under Bias
Thermal Resistance (Note 2)
°C
L
T
+150
°C
J
q
SC−88A
SC−74A
TSOP−5
SOT−553
SOT−953
UDFN6
659
555
555
562
560
382
°C/W
JA
P
D
Power Dissipation in Still Air
SC−88A
SC−74A
TSOP−5
SOT−553
SOT−953
UDFN6
190
225
225
222
223
327
mW
MSL
Moisture Sensitivity
Level 1
−
−
V
F
R
Flammability Rating
Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
V
ESD
ESD Withstand Voltage (Note 3)
Human Body Model
Charged Device Model
2000
1000
I
Latchup Performance (Note 4)
$100
mA
Latchup
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Applicable to devices with outputs that may be tri−stated.
2. Measured with minimum pad spacing on an FR4 board, using 10mm−by−1inch, 2 ounce copper trace no air flow.
3. HBM tested to ANSI/ESDA/JEDEC JS−001−2017. CDM tested to EIA/JESD22−C101−F. JEDEC recommends that ESD qualification to
EIA/JESD22−A115−A (Machine Model) be discontinued per JEDEC/JEP172A.
4. Tested to EIA/JESD78 Class II.
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3
MC74VHC1G126, MC74VHC1GT126
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
2.0
0
Max
5.5
Unit
V
V
CC
Positive DC Supply Voltage
DC Input Voltage
V
IN
5.5
V
DC Output Voltage
DC Output Voltage
TSOP−5, SC−88A (NLV)
0
V
V
OUT
V
CC
SC−74A, SC−88A, UDFN6, SOT−553, SOT−953
Active−Mode (High or Low State)
Tri−State Mode (Note 1)
0
0
0
V
CC
5.5
5.5
Power−Down Mode (V = 0 V)
CC
T
Operating Temperature Range
Input Rise and Fall Time
−55
+125
°C
A
TSOP−5, SC−88A (NLV)
t , t
r
ns/V
f
V
CC
V
CC
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
0
0
100
20
Input Rise and Fall Time
SC−74A, SC−88A, UDFN6, SOT−553, SOT−953
= 1.65 V to 1.95 V
V
CC
0
0
0
0
20
20
10
5
V
CC
V
CC
V
CC
= 2.3 V to 2.7 V
= 3.0 V to 3.6 V
= 4.5 V to 5.5 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
DC ELECTRICAL CHARACTERISTICS (MC74VHC1G126)
T
A
= 25°C
−40°C ≤ T ≤ 85°C
−55°C ≤ T ≤ 125°C
A
A
Test
V
CC
Min
1.5
2.1
3.15
3.85
−
Typ
−
Max
−
Min
1.5
2.1
3.15
3.85
−
Max
−
Min
1.5
2.1
3.15
3.85
−
Max
−
Conditions
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
Symbol
Parameter
Unit
V
IH
High−Level Input
Voltage
V
−
−
−
−
−
−
−
−
−
−
−
−
V
IL
Low−Level Input
Voltage
−
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
High−Level Output
Voltage
V
= V or V
IN
OH
OH
OH
OH
OH
IH
IL
I
I
I
I
I
= −50 mA
= −50 mA
= −50 mA
= −4 mA
= −8 mA
2.0
3.0
4.5
3.0
4.5
1.9
2.9
4.4
2.58
3.94
2.0
3.0
4.5
−
−
−
−
−
−
1.9
2.9
4.4
2.48
3.80
−
−
−
−
−
1.9
2.9
4.4
2.34
3.66
−
−
−
−
−
−
V
OL
Low−Level Output
Voltage
V
= V or V
V
IN
OL
OL
OL
OL
OL
IH
IL
I
I
I
I
I
= 50 mA
= 50 mA
= 50 mA
= 4 mA
= 8 mA
2.0
3.0
4.5
3.0
4.5
−
−
−
−
−
0.0
0.0
0.0
−
0.1
0.1
−
−
−
−
−
0.1
0.1
−
−
−
−
−
0.1
0.1
0.1
0.1
0.1
0.36
0.36
0.44
0.44
0.52
0.52
−
I
Input Leakage
Current
V
= 5.5 V or
1.65
−
−
−
−
−
−
−
−
0.1*
0.25
1.0
−
−
−
−
1.0
$2.5
10
−
−
−
−
$1.0
$2.5
10
mA
mA
mA
mA
IN
IN
GND
to 5.5
I
3−State Output
Leakage Current
V
= 0 V to
5.5
0
OZ
OUT
5.5 V
I
Power Off Leakage
Current
V
V
= 5.5 V or
= 5.5 V
OFF
IN
OUT
I
Quiescent Supply
Current
V
= V or
5.5
1.0
20
40
CC
IN
CC
GND
*Guaranteed by design.
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4
MC74VHC1G126, MC74VHC1GT126
DC ELECTRICAL CHARACTERISTICS (MC74VHC1GT126)
T
A
= 25°C
−40°C ≤ T ≤ 85°C
−55°C ≤ T ≤ 125°C
A
A
Test
V
CC
Min
1.0
1.4
2.0
2.0
−
Typ
−
Max
−
Min
1.0
1.4
2.0
2.0
−
Max
−
Min
1.0
1.4
2.0
2.0
−
Max
−
Conditions
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
Symbol
Parameter
Unit
V
IH
High−Level Input
Voltage
V
−
−
−
−
−
−
−
−
−
−
−
−
V
IL
Low−Level Input
Voltage
−
0.28
0.45
0.8
0.8
0.28
0.45
0.8
0.8
0.28
0.45
0.8
0.8
V
V
−
−
−
−
−
−
−
−
−
−
−
−
V
OH
High−Level Output
Voltage
V
= V or V
IN
OH
OH
OH
OH
OH
IH
IL
I
I
I
I
I
= −50 mA
= −50 mA
= −50 mA
= −4 mA
= −8 mA
2.0
3.0
4.5
3.0
4.5
1.9
2.9
4.4
2.58
3.94
2.0
3.0
4.5
−
−
−
−
−
−
1.9
2.9
4.4
2.48
3.80
−
−
−
−
−
1.9
2.9
4.4
2.34
3.66
−
−
−
−
−
−
V
OL
Low−Level Output
Voltage
V
= V or V
V
IN
OL
OL
OL
OL
OL
IH
IL
I
I
I
I
I
= 50 mA
= 50 mA
= 50 mA
= 4 mA
= 8 mA
2.0
3.0
4.5
3.0
4.5
−
−
−
−
−
0.0
0.0
0.0
−
0.1
0.1
−
−
−
−
−
0.1
0.1
−
−
−
−
−
0.1
0.1
0.1
0.1
0.1
0.36
0.36
0.44
0.44
0.52
0.52
−
I
Input Leakage Cur-
rent
V
= 5.5 V or
1.65
−
−
−
−
−
−
−
−
−
−
0.1*
0.25
1.0
−
−
−
−
−
1.0
$2.5
10
−
−
−
−
−
$1.0
$2.5
10
mA
mA
mA
mA
mA
IN
IN
GND
to 5.5
I
3−State Output
Leakage Current
V
= 0 V to
5.5
0
OZ
OUT
5.5 V
I
Power Off Leakage
Current
V
V
= 5.5 V or
= 5.5 V
OFF
IN
OUT
I
Quiescent Supply
Current
V
= V or
5.5
5.5
1.0
20
40
CC
IN
CC
GND
I
Increase in Quies-
cent Supply Current = 3.4 V; Other
One Input: V
1.35
1.5
1.65
CCT
IN
per Input Pin
*Guaranteed by design.
Input at V or
GND
CC
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5
MC74VHC1G126, MC74VHC1GT126
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)
r
f
T
A
= 25°C
Typ
4.5
6.4
3.5
4.5
4.5
6.4
3.5
4.5
6.5
8.0
4.8
7.0
4.0
6.0
−40°C ≤ T ≤ 85°C
−55°C ≤ T ≤ 125°C
A
A
Min
−
Max
8.0
11.5
5.5
7.5
8.0
11.5
5.1
7.1
9.7
13.2
6.8
8.8
10
Min
−
Max
9.5
Min
−
Max
12.0
16.0
8.5
Symbol
Parameter
Conditions
C = 15 pF
V
(V)
Unit
CC
t
t
t
,
Propagation Delay,
A to Y
(Figures 3 and 4)
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
3.0 to 3.6
4.5 to 5.5
ns
PLH
L
t
PHL
C = 50 pF
L
−
−
13.0
6.5
−
C = 15 pF
L
−
−
−
C = 50 pF
L
−
−
8.5
−
10.5
11.5
15.0
8.5
,
Output Enable
Time, OE to Y
(Figures 3 and 4)
C = 15 pF
L
−
−
9.5
−
ns
ns
PZL
t
PZH
C = 50 pF
L
−
−
13.0
6.0
−
C = 15 pF
L
−
−
−
C = 50 pF
L
−
−
8.0
−
10.5
14.5
18.0
10.0
12.0
10
,
Output Disable
Time, OE to Y
(Figures 3 and 4)
C = 15 pF
L
−
−
11.5
15.0
8.0
−
PLZ
t
PHZ
C = 50 pF
L
−
−
−
C = 15 pF
L
−
−
−
C = 50 pF
L
−
−
10.0
10
−
C
Input Capacitance
Output Capacitance
−
−
−
pF
pF
IN
C
Output in
High
−
−
−
−
−
−
OUT
Impedance
State
Typical @ 25°C, V = 5.0 V
CC
8.0
C
Power Dissipation Capacitance (Note 5)
pF
PD
5. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
PD
Average operating current can be obtained by the equation: I
) = C ꢀ V ꢀ f + I . C is used to determine the no−load dynamic
CC(OPR
PD CC in CC PD
2
power consumption; P = C ꢀ V
ꢀ f + I ꢀ V
.
D
PD
CC
in
CC
CC
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6
MC74VHC1G126, MC74VHC1GT126
OPEN
Test
Switch
C , pF
L
R , W
L
V
CC
GND
Position
t
/ t
Open
See AC Characteristics Table
X
PLH PHL
R
L
t
/ t
V
1 k
1 k
PLZ PZL
CC
t
/ t
GND
DUT
OUTPUT
PHZ PZH
X = Don’t Care
R
T
C *
L
C includes probe and jig capacitance
L
R is Z
of pulse generator (typically 50 W)
T
OUT
f = 1 MHz
Figure 3. Test Circuit
V
CC
t = 3 ns
r
t = 3 ns
f
V
CC
90%
90%
INPUT
V
mi
V
mi
V
mi
V
mi
INPUT
GND
~V
10%
10%
GND
t
t
PLZ
PZL
t
t
PLH
PHL
CC
V
OH
V
V
OUTPUT
OUTPUT
mo
V
V
V
V
OUTPUT
OUTPUT
mo
mo
V
+ V
OL
OL
Y
V
V
V
OL
t
t
PHZ
PZH
t
t
PLH
PHL
V
OH
OH
V
− V
OH
Y
mo
mo
mo
V
OL
~0 V
Figure 4. Switching Waveforms
V , V
mo
t
, t
t
, t , t , t
PZL PLZ PZH PHZ
V
CC
, V
V
mi
, V
V , V
Y
PLH PHL
3.0 to 3.6
4.5 to 5.5
V
/2
/2
(V − V )/2
V
CC
V
CC
/2
/2
0.3
0.3
CC
CC
OH
OL
V
(V − V )/2
OH
OL
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MC74VHC1G126, MC74VHC1GT126
ORDERING INFORMATION
Pin 1 Orientation
(See below)
†
Device
Packages
SC−88A
SC−88A
SC−88A
SC−88A
SC−88A
SC−88A
SC−88A
SC−88A
SC−74A
Specific Device Code
Shipping
M74VHC1G126DFT1G
M74VHC1G126DFT2G
NLVVHC1G126DFT1G*
NLVVHC1G126DFT2G*
M74VHC1GT126DF1G
M74VHC1GT126DF2G
NLVVHC1GT126DF2G*
NLVVHC1GT126DF1G*
W2
W2
W2
W2
W3
W3
W3
W3
TBD
Q2
Q4
Q2
Q4
Q2
Q4
Q4
Q2
Q4
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
MC74VHC1G126DBVT1G
(In Development)
3000 / Tape & Reel
3000 / Tape & Reel
MC74VHC1GT126DBVT1G
(In Development)
SC−74A
TBD
Q4
M74VHC1G126DTT1G
M74VHC1GT126DT1G
NLVVHC1GT126DT1G*
TSOP−5
TSOP−5
TSOP−5
SOT−553
W2
W3
Q4
Q4
Q4
Q4
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
W3R
TBD
MC74VHC1G126XV5T2G
(In Development)
MC74VHC1GT126XV5T2G
(In Development)
SOT−553
SOT−953
TBD
TBD
TBD
TBD
TBD
TBD
TBD
Q4
Q2
Q2
Q4
Q4
Q4
Q4
3000 / Tape & Reel
4000 / Tape & Reel
4000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
MC74VHC1G126P5T5G
(In Development)
MC74VHC1GT126P5T5G
(In Development)
SOT−953
MC74VHC1G126MU1TCG
(In Development)
UDFN6, 1.45 x 1.0, 0.5P
UDFN6, 1.45 x 1.0, 0.5P
UDFN6, 1.0 x 1.0, 0.35
UDFN6, 1.0 x 1.0, 0.35
MC74VHC1GT126MU1TCG
(In Development)
MC74VHC1G126MU3TCG
(In Development)
MC74VHC1GT126MU3TCG
(In Development)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
Pin 1 Orientation in Tape and Reel
www.onsemi.com
8
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
G
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
5
4
3
−B−
S
INCHES
DIM MIN MAX
MILLIMETERS
MIN
1.80
1.15
0.80
0.10
MAX
2.20
1.35
1.10
0.30
1
2
A
B
C
D
G
H
J
0.071
0.045
0.031
0.004
0.087
0.053
0.043
0.012
0.026 BSC
0.65 BSC
M
M
B
D 5 PL
0.2 (0.008)
---
0.004
0.004
0.004
0.010
0.012
---
0.10
0.10
0.10
0.25
0.30
K
N
S
N
0.008 REF
0.20 REF
0.079
0.087
2.00
2.20
J
C
K
H
SOLDER FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
9
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
SC−74A
CASE 318BQ
ISSUE B
5X b
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
0.20 C A B
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE.
M
5
4
E1
E
1
2
3
0.05
A1
L
B
e
DETAIL A
A
D
MILLIMETERS
DIM
A
A1
b
c
D
E
E1
e
MIN
0.90
0.01
0.25
0.10
2.85
2.50
1.35
MAX
1.10
0.10
0.50
0.26
3.15
3.00
1.65
TOP VIEW
SIDE VIEW
A
DETAIL A
c
0.95 BSC
SEATING
END VIEW
C
PLANE
L
M
0.20
0
0.60
10
_
_
RECOMMENDED
SOLDERING FOOTPRINT*
0.95
PITCH
2.40
5X
1.00
5X
0.70
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
10
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
NOTE 5
5X
D
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
0.20 C A B
2X
0.10
T
M
5
4
3
2X
0.20
T
B
S
1
2
K
B
A
DETAIL Z
G
A
MILLIMETERS
TOP VIEW
DIM
A
B
C
D
MIN
2.85
1.35
0.90
0.25
MAX
3.15
1.65
1.10
0.50
DETAIL Z
J
G
H
J
K
M
S
0.95 BSC
C
0.01
0.10
0.20
0
0.10
0.26
0.60
10
3.00
0.05
H
SEATING
PLANE
END VIEW
C
_
_
SIDE VIEW
2.50
SOLDERING FOOTPRINT*
1.9
0.074
0.95
0.037
2.4
0.094
1.0
0.039
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
11
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
SOT−553, 5 LEAD
CASE 463B
ISSUE C
NOTES:
D
−X−
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
A
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
L
5
4
3
MILLIMETERS
INCHES
NOM
0.022
0.009
0.005
E
−Y−
DIM
A
b
c
D
E
e
L
H
MIN
0.50
0.17
0.08
1.55
1.15
NOM
0.55
MAX
MIN
MAX
0.024
0.011
0.007
0.065
0.049
H
E
0.60
0.27
0.18
1.65
1.25
0.020
0.007
0.003
0.061
0.045
1
2
0.22
0.13
1.60
0.063
0.047
b 5 PL
c
1.20
e
M
0.50 BSC
0.20
1.60
0.020 BSC
0.008
0.063
0.08 (0.003)
X Y
0.10
1.55
0.30
1.65
0.004
0.061
0.012
0.065
E
SOLDERING FOOTPRINT*
0.3
0.0118
0.45
0.0177
1.0
0.0394
1.35
0.0531
0.5
0.5
0.0197 0.0197
mm
inches
ǒ
Ǔ
SCALE 20:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
12
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
SOT−953
CASE 527AE
ISSUE E
NOTES:
X
Y
D
1. DIMENSIONING AND TOLERANCING PER ASME
A
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS.
5
4
3
PIN ONE
H
E
INDICATOR
E
1
2
MILLIMETERS
DIM MIN
NOM
0.37
0.15
0.12
1.00
MAX
0.40
0.20
0.17
1.05
0.85
A
b
0.34
0.10
0.07
0.95
0.75
C
TOP VIEW
e
C
D
SIDE VIEW
E
e
0.80
0.35 BSC
HE
L
0.95
1.00
0.175 REF
1.05
5X
L
L2
L3
0.05
−−−
0.10
−−−
0.15
0.15
5X
5X
L3
L2
SOLDERING FOOTPRINT*
5X
0.35
5X
0.20
5X
b
PACKAGE
OUTLINE
0.08 X
Y
BOTTOM VIEW
1.20
1
0.35
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
13
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
UDFN6, 1.45x1.0, 0.5P
CASE 517AQ
ISSUE O
A
B
D
L
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30 mm FROM THE TERMINAL TIP.
L1
DETAIL A
PIN ONE
OPTIONAL
E
MILLIMETERS
REFERENCE
CONSTRUCTIONS
DIM MIN
0.45
A1 0.00
MAX
0.55
0.05
A
0.10
C
EXPOSED Cu
MOLD CMPD
A2
b
0.07 REF
0.20
1.45 BSC
TOP VIEW
0.30
0.10
C
D
E
e
1.00 BSC
0.50 BSC
DETAIL B
L
L1
0.30
−−−
0.40
0.15
DETAIL B
OPTIONAL
0.05
0.05
C
C
CONSTRUCTIONS
A
MOUNTING FOOTPRINT
6X
A1
6X
SEATING
PLANE
A2
C
0.30
SIDE VIEW
e
PACKAGE
OUTLINE
6X L
1.24
3
1
DETAIL A
6X
0.53
1
0.50
PITCH
DIMENSIONS: MILLIMETERS
6
4
6X b
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.10 C A B
NOTE 3
C
0.05
BOTTOM VIEW
www.onsemi.com
14
MC74VHC1G126, MC74VHC1GT126
PACKAGE DIMENSIONS
UDFN6, 1x1, 0.35P
CASE 517BX
ISSUE O
L1
NOTES:
L
A B
D
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.20 MM FROM TERMINAL TIP.
4. PACKAGE DIMENSIONS EXCLUSIVE OF
BURRS AND MOLD FLASH.
PIN ONE
L3
REFERENCE
E
DETAIL A
ALTERNATE TERMINAL
CONSTRUCTION
2X
0.08
C
MILLIMETERS
DIM MIN
MAX
0.65
0.05
A
A1
A3
b
0.50
0.00
0.13 REF
2X
0.08
C
TOP VIEW
EXPOSED Cu
MOLD CMPD
0.17
0.23
DETAIL B
0.05
C
C
D
E
e
L
L1
L3
1.00 BSC
1.00 BSC
0.35
A3
DETAIL B
A
0.20
−−−
0.26
0.40
0.15
0.33
ALTERNATE
CONSTRUCTION
0.05
A1
SEATING
PLANE
C
SIDE VIEW
e
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
6X
0.52
6X L
6X
0.25
3
1
1.20
PACKAGE
OUTLINE
1
6
4
6X b
0.35
M
0.07
0.05
C A
B
PITCH
M
C
NOTE 3
BOTTOM VIEW
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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◊
MC74VHC1G126/D
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