MC74VHCT126AMEL [ONSEMI]

AHC/VHC/H/U/V SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14, EIAJ, SOP-14;
MC74VHCT126AMEL
型号: MC74VHCT126AMEL
厂家: ONSEMI    ONSEMI
描述:

AHC/VHC/H/U/V SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14, EIAJ, SOP-14

驱动 光电二极管 输出元件 逻辑集成电路
文件: 总6页 (文件大小:97K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MC74VHCT126A  
Quad Bus Buffer  
with 3−State Control Inputs  
The MC74VHCT126A is a high speed CMOS quad bus buffer  
fabricated with silicon gate CMOS technology. It achieves  
noninverting high speed operation similar to equivalent Bipolar  
Schottky TTL while maintaining CMOS low power dissipation.  
The MC74VHCT126A requires the 3−state control input (OE) to be  
set Low to place the output into high impedance.  
The VHCT inputs are compatible with TTL levels. This device can  
be used as a level converter for interfacing 3.3 V to 5.0 V, because it  
has full 5.0 V CMOS level output swings.  
www.onsemi.com  
MARKING  
DIAGRAMS  
14  
SOIC−14  
D SUFFIX  
CASE 751A  
VHCT126AG  
AWLYWW  
The VHCT126A input structures provide protection when voltages  
between 0 V and 5.5 V are applied, regardless of the supply voltage.  
1
1
The output structures also provide protection when V = 0 V. These  
CC  
input and output structures help prevent device destruction caused by  
supply voltage − input/output voltage mismatch, battery backup, hot  
insertion, etc.  
The internal circuit is composed of three stages, including a buffer  
output which provides high noise immunity and stable output. The  
inputs tolerate voltages up to 7.0 V, allowing the interface of 5.0 V  
systems to 3.0 V systems.  
14  
VHCT  
126A  
ALYWG  
G
TSSOP−14  
DT SUFFIX  
CASE 948G  
1
1
A
= Assembly Location  
WL, L = Wafer Lot  
= Year  
Features  
Y
WW, W = Work Week  
High Speed: t = 3.8 ns (Typ) at V = 5.0 V  
PD  
CC  
G or G = Pb−Free Package  
Low Power Dissipation: I = 4.0 mA (Max) at T = 25°C  
CC  
A
(Note: Microdot may be in either location)  
TTL−Compatible Inputs: V = 0.8 V; V = 2.0 V  
IL  
IH  
See Applications Note #AND8004/D for  
date code and traceability information.  
Power Down Protection Provided on Inputs  
Balanced Propagation Delays  
Designed for 2.0 V to 5.5 V Operating Range  
FUNCTION TABLE  
VHCT126A  
Low Noise: V  
= 0.8 V (Max)  
OLP  
Pin and Function Compatible with Other Standard Logic Families  
Latchup Performance Exceeds 300 mA  
Inputs  
Outputs  
ESD Performance: HBM > 2000 V; Machine Model > 200 V  
Chip Complexity: 72 FETs or 18 Equivalent Gates  
NLV Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q100  
Qualified and PPAP Capable  
A
OE  
Y
H
L
X
H
H
L
H
L
Z
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 4 of this data sheet.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 11  
MC74VHCT126A/D  
MC74VHCT126A  
2
1
3
6
A1  
Y1  
OE1  
OE1  
A1  
1
2
14  
13 OE4  
12  
V
CC  
5
4
A2  
Y2  
Y3  
Y1  
3
4
A4  
OE2  
OE2  
11 Y4  
9
8
A3  
A2  
Y2  
5
6
7
10 OE3  
10  
9
8
A3  
Y3  
OE3  
GND  
12  
13  
11  
A4  
Y4  
OE4  
Figure 2. PIN ASSIGNMENT  
Figure 1. LOGIC DIAGRAM  
Active−High Output Enables  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance cir-  
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
V
CC  
– 0.5 to + 7.0  
– 0.5 to + 7.0  
– 0.5 to + 7.0  
V
in  
V
Output in 3−State  
High or Low State  
V
out  
V
– 0.5 to V + 0.5  
CC  
Input Diode Current  
I
IK  
− 20  
20  
mA  
mA  
mA  
mA  
mW  
cuit. For proper operation, V and  
in  
V
out  
should be constrained to the  
Output Diode Current (V  
< GND; V  
> V  
)
I
OK  
OUT  
OUT  
CC  
range GND v (V or V ) v V  
.
in  
out  
CC  
DC Output Current, per Pin  
DC Supply Current, V and GND Pins  
I
I
25  
out  
Unused inputs must always be  
tied to an appropriate logic voltage  
75  
CC  
CC  
level (e.g., either GND or V ).  
CC  
Power Dissipation in Still Air,  
SOIC Packages†  
TSSOP Package†  
P
D
500  
450  
Unused outputs must be left open.  
Storage Temperature  
T
– 65 to + 150  
_C  
stg  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of  
these limits are exceeded, device functionality should not be assumed, damage may occur and  
reliability may be affected.  
†Derating — SOIC Packages: – 7 mW/_C from 65_ to 125_C  
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C  
RECOMMENDED OPERATING CONDITIONS  
Parameter  
Symbol  
Min  
4.5  
0
Max  
5.5  
5.5  
5.5  
Unit  
V
DC Supply Voltage  
DC Input Voltage  
DC Output Voltage  
V
CC  
V
in  
V
Output in 3−State  
High or Low State  
V
out  
0
0
V
V
CC  
Operating Temperature  
Input Rise and Fall Time  
T
− 40  
0
+ 85  
20  
_C  
A
V
CC  
= 5.0 V 0.5 V  
t , t  
r f  
ns/V  
Functional operation above the stresses listed in the Recommended Operating Ranges is not  
implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may  
affect device reliability.  
www.onsemi.com  
2
MC74VHCT126A  
DC ELECTRICAL CHARACTERISTICS  
T
A
= 25°C  
T
A
85°C  
T 125°C  
A
V
CC  
(V)  
Min Typ Max  
Min  
Max  
Min  
Max  
Parameter  
Test Conditions  
Symbol  
Unit  
Minimum High−Level Input  
Voltage  
V
IH  
3.0  
4.5  
5.5  
1.2  
2.0  
2.0  
1.2  
2.0  
2.0  
1.2  
2.0  
2.0  
V
Maximum Low−Level Input  
Voltage  
V
3.0  
4.5  
5.5  
0.53  
0.8  
0.8  
0.53  
0.8  
0.8  
0.53  
0.8  
0.8  
V
V
IL  
Minimum High−Level Output  
Voltage  
V
= V or V  
= − 50 mA  
V
OH  
3.0  
4.5  
2.9  
4.4  
3.0  
4.5  
2.9  
4.4  
2.9  
4.4  
IN  
IH  
IL  
I
OH  
V
IN  
= V or V  
IH IL  
V
I
I
= V or V  
IH  
= − 4.0 mA  
= − 8.0 mA  
IN  
OH  
OH  
IL  
3.0  
4.5  
2.58  
3.94  
2.48  
3.80  
2.34  
3.66  
Maximum Low−Level Output  
Voltage  
V
= V or V  
= 50 mA  
V
OL  
3.0  
4.5  
0.0  
0.0  
0.1  
0.1  
0.1  
0.1  
0.1  
0.1  
V
IN  
IH  
IL  
I
OL  
V
IN  
= V or V  
IH IL  
V
I
I
= V or V  
= 4.0 mA  
= 8.0 mA  
IN  
OL  
OL  
IH  
IL  
3.0  
4.5  
0.36  
0.36  
0.44  
0.44  
0.52  
0.52  
Maximum Input Leakage Current  
V
V
= 5.5 V or GND  
I
0 to 5.5  
5.5  
0.1  
2.0  
1.0  
20  
1.0  
40  
mA  
mA  
IN  
IN  
Maximum Quiescent Supply  
Current  
= V or GND  
I
CC  
IN  
CC  
Quiescent Supply Current  
Input: V = 3.4 V  
I
5.5  
5.5  
1.35  
1.50  
2.5  
1.65  
2.5  
mA  
IN  
CCT  
Maximum 3−State Leakage  
Current  
V
V
= V or V  
I
OZ  
0.2  
5
mA  
IN  
IH  
I
= V or GND  
OUT  
CC  
Output Leakage Current  
V
OUT  
= 5.5 V  
I
0.0  
0.5  
5.0  
10  
mA  
OPD  
AC ELECTRICAL CHARACTERISTICS (Input t = t = 3.0 ns)  
r
f
T
A
= 25°C  
T
A
= 85°C  
T 125°C  
A
Min Typ Max  
Min  
Max  
Min  
Max  
Parameter  
Test Conditions  
= 3.3 0.3 V C = 15 pF  
Symbol  
Unit  
Maximum Propagation Delay,  
A to Y  
V
V
V
t
t
t
,
5.6  
8.1  
8.0  
11.5  
1.0  
1.0  
9.5  
13.0  
12.0  
16.0  
ns  
CC  
CC  
CC  
L
PLH  
t
C = 50 pF  
L
PHL  
= 5.0 0.5 V C = 15 pF  
3.8  
5.3  
5.5  
7.5  
1.0  
1.0  
6.5  
8.5  
8.5  
10.5  
L
C = 50 pF  
L
Maximum Output Enable  
TIme,OE to Y  
= 3.3 0.3 V C = 15 pF  
,
PZL  
PZH  
5.4  
7.9  
8.0  
11.5  
1.0  
1.0  
9.5  
13.0  
11.5  
15.0  
ns  
ns  
ns  
L
t
R = 1.0 kW  
C = 50 pF  
L
L
V
CC  
= 5.0 0.5 V C = 15 pF  
3.6  
5.1  
5.1  
7.1  
1.0  
1.0  
6.0  
8.0  
7.5  
9.5  
L
R = 1.0 kW  
C = 50 pF  
L
L
Maximum Output  
Disable Time,OE to Y  
V
CC  
= 3.3 0.3 V C = 50 pF  
,
PLZ  
9.5  
13.2  
8.8  
1.5  
1.0  
10  
1.0  
15.0  
10.0  
1.5  
18.0  
12.0  
2.0  
L
t
R = 1.0 kW  
PHZ  
L
V
CC  
= 5.0 0.5 V C = 50 pF  
L
R = 1.0 kW  
6.1  
1.0  
L
Output−to−Output Skew  
V
CC  
= 3.3 0.3 V C = 50 pF  
t
,
L
OSLH  
(Note 1)  
t
OSHL  
V
CC  
= 5.0 0.5 V C = 50 pF  
1.0  
1.5  
L
(Note 1)  
Maximum Input Capacitance  
C
4
6
10  
10  
pF  
pF  
in  
Maximum Three−State Output  
Capacitance (Output in High  
Impedance State)  
C
out  
Typical @ 25°C, V = 5.0V  
CC  
15  
Power Dissipation Capacitance (Note 2)  
1. Parameter guaranteed by design. t  
C
pF  
PD  
= |t  
− t  
|, t  
= |t  
− t  
PHLn  
|.  
OSLH  
PLHm  
PLHn OSHL  
PHLm  
2. C is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.  
PD  
Average operating current can be obtained by the equation: I  
no−load dynamic power consumption; P = C V  
) = C V f + I /4 (per buffer). C is used to determine the  
CC(OPR  
PD CC in CC PD  
2
f + I V  
.
D
PD  
CC  
in  
CC  
CC  
www.onsemi.com  
3
 
MC74VHCT126A  
NOISE CHARACTERISTICS (Input t = t = 3.0ns, C = 50pF, V = 5.0V)  
r
f
L
CC  
T
A
= 25°C  
Typ  
0.3  
Max  
0.8  
Characteristic  
Quiet Output Maximum Dynamic V  
Symbol  
Unit  
V
OLP  
V
OL  
Quiet Output Minimum Dynamic V  
V
− 0.3  
− 0.8  
3.5  
V
V
V
OL  
OLV  
Minimum High Level Dynamic Input Voltage  
Maximum Low Level Dynamic Input Voltage  
V
IHD  
V
1.5  
ILD  
SWITCHING WAVEFORMS  
3.0V  
OE  
1.5V  
3.0V  
GND  
A
Y
1.5V  
t
t
PZL  
PLZ  
GND  
HIGH  
IMPEDANCE  
t
PHL  
t
PLH  
1.5V  
t
Y
V
OH  
V
OL  
V
V
+ 0.3V  
OL  
1.5V  
t
PZH  
PHZ  
- 0.3V  
OH  
1.5V  
Y
HIGH  
IMPEDANCE  
Figure 3.  
Figure 4.  
TEST POINT  
TEST POINT  
CONNECT TO V WHEN  
CC  
1 kW  
TESTING t AND t  
PZL.  
OUTPUT  
OUTPUT  
PLZ  
DEVICE  
UNDER  
TEST  
CONNECT TO GND WHEN  
TESTING t AND t  
DEVICE  
UNDER  
TEST  
PHZ  
PZH.  
C *  
L
C *  
L
*Includes all probe and jig capacitance  
*Includes all probe and jig capacitance  
Figure 5. Test Circuit  
Figure 6. Test Circuit  
ORDERING INFORMATION  
Device  
Package  
Shipping  
MC74VHCT126ADR2G  
SOIC−14  
(Pb−Free)  
2500 / Tape & Reel  
M74VHCT126ADTR2G  
NLVVHCT126ADTR2G*  
TSSOP−14  
(Pb−Free)  
2500 / Tape & Reel  
2500 / Tape & Reel  
TSSOP−14  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP  
Capable.  
www.onsemi.com  
4
MC74VHCT126A  
PACKAGE DIMENSIONS  
SOIC−14  
CASE 751A−03  
ISSUE K  
NOTES:  
D
A
B
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION b DOES NOT INCLUDE DAMBAR  
PROTRUSION. ALLOWABLE PROTRUSION  
SHALL BE 0.13 TOTAL IN EXCESS OF AT  
MAXIMUM MATERIAL CONDITION.  
4. DIMENSIONS D AND E DO NOT INCLUDE  
MOLD PROTRUSIONS.  
14  
8
7
A3  
E
H
5. MAXIMUM MOLD PROTRUSION 0.15 PER  
SIDE.  
L
DETAIL A  
1
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
13X b  
M
M
B
0.25  
A
A1  
A3  
b
D
E
1.35  
0.10  
0.19  
0.35  
8.55  
3.80  
1.75 0.054 0.068  
0.25 0.004 0.010  
0.25 0.008 0.010  
0.49 0.014 0.019  
8.75 0.337 0.344  
4.00 0.150 0.157  
M
S
S
B
0.25  
C
A
DETAIL A  
h
A
X 45  
_
e
H
h
L
1.27 BSC  
0.050 BSC  
6.20 0.228 0.244  
0.50 0.010 0.019  
1.25 0.016 0.049  
5.80  
0.25  
0.40  
0
M
A1  
e
M
7
0
7
_
_
_
_
SEATING  
PLANE  
C
SOLDERING FOOTPRINT*  
6.50  
14X  
1.18  
1
1.27  
PITCH  
14X  
0.58  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
www.onsemi.com  
5
MC74VHCT126A  
PACKAGE DIMENSIONS  
TSSOP−14  
DT SUFFIX  
CASE 948G  
ISSUE B  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER  
14X K REF  
M
S
S
V
ANSI Y14.5M, 1982.  
0.10 (0.004)  
T
U
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION A DOES NOT INCLUDE MOLD  
FLASH, PROTRUSIONS OR GATE BURRS.  
MOLD FLASH OR GATE BURRS SHALL NOT  
EXCEED 0.15 (0.006) PER SIDE.  
4. DIMENSION B DOES NOT INCLUDE  
INTERLEAD FLASH OR PROTRUSION.  
INTERLEAD FLASH OR PROTRUSION SHALL  
NOT EXCEED 0.25 (0.010) PER SIDE.  
5. DIMENSION K DOES NOT INCLUDE  
DAMBAR PROTRUSION. ALLOWABLE  
DAMBAR PROTRUSION SHALL BE 0.08  
(0.003) TOTAL IN EXCESS OF THE K  
DIMENSION AT MAXIMUM MATERIAL  
CONDITION.  
S
0.15 (0.006) T  
U
N
0.25 (0.010)  
14  
8
2X L/2  
M
B
−U−  
L
N
PIN 1  
IDENT.  
F
7
1
DETAIL E  
6. TERMINAL NUMBERS ARE SHOWN FOR  
REFERENCE ONLY.  
7. DIMENSION A AND B ARE TO BE  
DETERMINED AT DATUM PLANE −W−.  
S
K
0.15 (0.006) T  
U
A
K1  
−V−  
MILLIMETERS  
DIM MIN MAX  
INCHES  
MIN MAX  
A
B
C
D
F
4.90  
4.30  
−−−  
0.05  
0.50  
5.10 0.193 0.200  
4.50 0.169 0.177  
J J1  
1.20  
−−− 0.047  
0.15 0.002 0.006  
0.75 0.020 0.030  
SECTION N−N  
G
H
J
J1  
K
0.65 BSC  
0.026 BSC  
0.60 0.020 0.024  
0.20 0.004 0.008  
0.16 0.004 0.006  
0.30 0.007 0.012  
0.25 0.007 0.010  
0.50  
0.09  
0.09  
0.19  
−W−  
C
0.10 (0.004)  
K1 0.19  
L
M
6.40 BSC  
0.252 BSC  
SEATING  
−T−  
H
G
DETAIL E  
D
0
8
0
8
_
_
_
_
PLANE  
SOLDERING FOOTPRINT  
7.06  
1
0.65  
PITCH  
14X  
0.36  
14X  
1.26  
DIMENSIONS: MILLIMETERS  
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ONSEMI

MC74VHCT126AMG

AHCT/VHCT/VT SERIES, QUAD 1-BIT DRIVER, TRUE OUTPUT, PDSO14, RoHS COMPLIANT, EIAJ, SOP-14
ONSEMI

MC74VHCT126A_11

Quad Bus Buffer with 3−State Control Inputs
ONSEMI

MC74VHCT132A

Quad 2-Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132AD

Quad 2-Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132ADR2

Quad 2−Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132ADR2G

Quad 2−Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132ADT

Quad 2-Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132ADTR2

Quad 2−Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132ADTRG

Quad 2−Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132AM

Quad 2-Input NAND Schmitt Trigger
ONSEMI

MC74VHCT132AMEL

Quad 2−Input NAND Schmitt Trigger
ONSEMI