MCH6320-TL-E [ONSEMI]

单 P 沟道，功率 MOSFET，-12V，-3.5A，70mΩ;


型号：	MCH6320-TL-E
厂家：	ONSEMI
描述：	单 P 沟道，功率 MOSFET，-12V，-3.5A，70mΩ
文件：	总5页 (文件大小：358K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCH6320

Power MOSFET

www.onsemi.com

–12V, 70mΩ, –3.5A, Single P-Channel

Features

(on) Max

D Max

DSS

• 1.8V Drive

• High Speed Switching

• Pb-Free and RoHS Compliance

70mΩ@ −4.5V

115mΩ@ −2.5V

215mΩ@ −1.8V

−12V

−3.5A

Specifications

Absolute Maximum Ratings at Ta = 25°C

Electrical Connection

P-Channel

Unit

Parameter

Symbol

Value

1, 2, 5, 6

Drain to Source Voltage

DSS

−12

Gate to Source Voltage

Drain Current (DC)

GSS

−3.5

1 : Drain

2 : Drain

3 : Gate

Drain Current (Pulse)

−14

PW≤10μs, duty cycle≤1%

4 : Source

5 : Drain

6 : Drain

Power Dissipation

When mounted on ceramic substrate

(1200mm²

× 0.8mm)

1.5

°C

Junction Temperature

Storage Temperature

150

Tstg

−55 to +150

This product is designed to “ESD immunity < 200V*”, so please take care when handling.

* Machine Model

Packing Type : TL

Marking

Thermal Resistance Ratings

Parameter

Junction to Ambient

When mounted on ceramic substrate

(1200mm²

0.8mm)

Symbol

Value

Unit

°C/W

83.3

θJA

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information on page 5 of this data sheet.

March 2015 - Rev. 3

Publication Order Number :

MCH6320/D

MCH6320

Electrical Characteristics at Ta = 25°C

Value

typ

Parameter

Symbol

Conditions

Unit

min

−12

max

Drain to Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate to Source Leakage Current

Gate Threshold Voltage

)

=−1mA, V =0V

μA

BR DSS

=−12V, V =0V

−10

DSS

= 8V, V =0V

GSS

(th)

=−6V, I =−1mA

−0.4

−1.4

Forward Transconductance

=−6V, I =−1.5A

2.7

4.5

(on)1

(on)2

(on)3

=−1.5A, V =−4.5V

115

215

mΩ

Static Drain to Source On-State Resistance

=−0.8A, V =−2.5V

=−0.3A, V =−1.8V

125

405

145

100

8.8

Input Capacitance

Ciss

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Coss

Crss

=−6V, f=1MHz

t (on)

See specified Test Circuit

Turn-OFF Delay Time

Fall Time

t (off)

Total Gate Charge

Gate to Source Charge

Gate to Drain “Miller” Charge

Forward Diode Voltage

5.6

Qgs

Qgd

=−6V, V =−4.5V, I =−3.5A

DS GS

0.7

1.6

I =−3.5A, V =0V

−0.86

−1.2

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be

indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

= --6V

--4.5V

= --1.5A

R =4Ω

OUT

PW=10μs

D.C.≤1%

MCH6320

P. G

50Ω

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MCH6320

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MCH6320

www.onsemi.com

MCH6320

Package Dimensions

MCH6320-TL-E / MCH6320-TL-W

MCPH6

CASE 419AS

ISSUE O

unit : mm

1 : Drain

2 : Drain

3 : Gate

4 : Source

5 : Drain

6 : Drain

Recommended

Soldering Footprint

0.4

0.65 0.65

ORDERING INFORMATION

Device

Package

Shipping

Note

MCH6320-TL-E

Pb-Free

MCPH6

SC-88FL,SC-70-6,SOT-363

3,000 pcs. / Tape & Reel

Pb-Free

and Halogen Free

MCH6320-TL-W

† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel

Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF

Note on usage : Since the MCH6320 is a MOSFET product, please avoid using this device in the vicinity

of highly charged objects.

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiariesin the United States

and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of

SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without

further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitabilityof its products for any particular purpose,

nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including

without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can

and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each

customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are

not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or

sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,

directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was

negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all

applicable copyright laws and is not for resale in any manner.

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