MCH6341-TL-E [ONSEMI]
Single P-Channel Power MOSFET, -30V, -5A, 59mΩ, SC 88FL / MCPH6, 3000-REEL;
| 型号： | MCH6341-TL-E |
| 厂家： | 
ONSEMI |
| 描述： | Single P-Channel Power MOSFET, -30V, -5A, 59mΩ, SC 88FL / MCPH6, 3000-REEL |
| 文件： | 总5页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Ordering number : ENA1272B
MCH6341
Power MOSFET
http://onsemi.com
–
–
Ω
30V, 59m , 5A, Single P-Channel
Features
•
•
•
Low R (on)
Pb-free and RoHS Compliance
4V drive
ESD diode-Protected gate
DS
ꢀ
•
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Ratings
--30
Unit
V
V
V
DSS
GSS
±20
V
I
I
--5
A
D
Drain Current (Pulse)
Power Dissipation
PW 10 s, duty cycle 1%
--20
A
≤
μ
≤
DP
P
When mounted on ceramic substrate (1200mm2 0.8mm)
1.5
W
°C
°C
×
D
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Product & Package Information
Package Dimensions
unit : mm (typ)
•ꢀPackageꢀ
:ꢀMCPH6
7022A-009
•ꢀJEITA,ꢀJEDECꢀ
:ꢀSC-88,ꢀSC-70-6,ꢀSOT-363
•ꢀMinimumꢀPackingꢀQuantityꢀ :ꢀ3,000ꢀpcs./reel
2.0
0.15
MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
Packing Type : TL
Marking
6
5
4
3
0 to 0.02
YQ
TL
1
2
0.65
0.3
Electrical Connection
1, 2, 5, 6
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
1
2
3
4
3
MCPH6
6
5
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
July, 2014
72814HK TC-00002819/62012TKIM/73008TIIM PE No. A1272-1/5
MCH6341
at Ta=25°C
Electrical Characteristics
Ratings
typ
Parameter
Symbol
Conditions
Unit
V
min
--30
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
V
I
I =-- 1mA, V =0V
D GS
(BR)DSS
V
V
V
V
I
=-- 30V, V =0V
GS
--1
A
A
μ
DSS
GSS
DS
GS
DS
DS
I
=±16V, V =0V
DS
±10
μ
V
g
(th)
=-- 10V, I =-- 1mA
--1.2
2.8
--2.6
V
GS
D
Forward Transconductance
=-- 10V, I =-- 3A
4.8
45
S
FS
D
R
(on)1
DS
(on)2
DS
(on)3
DS
=-- 3A, V =-- 10V
GS
59
100
115
m
Ω
Ω
Ω
D
Static Drain-to-Source On-State Resistance
R
R
I
D
I
D
=-- 1.5A, V =-- 4.5V
GS
71
m
m
=-- 1.5A, V =-- 4V
GS
82
Input Capacitance
Ciss
430
105
75
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=--10V, f=1MHz
DS
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
t (on)
d
7.5
26
t
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
45
t
35
f
Total Gate Charge
Qg
10
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
V
=-- 15V, V =-- 10V, I =-- 5A
DS GS
2.0
2.5
--0.87
D
V
I =-- 5A, V =0V
S GS
--1.5
SD
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
= --15V
DD
V
IN
0V
--10V
I
= --3A
D
V
IN
R =5Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
MCH6341
P.G
50Ω
S
Ordering Information
Device
MCH6341-TL-E
MCH6341-TL-H
MCH6341-TL-W
Package
Shipping
memo
MCPH6
MCPH6
MCPH6
3,000pcs./reel
3,000pcs./reel
3,000pcs./reel
Pb Free
Pb Free and Halogen Free
Pb Free and Halogen Free
No. A1272-2/5
MCH6341
I
-- V
I
-- V
GS
D
DS
D
--5.0
--4.5
--4.0
--3.5
--3.0
--2.5
--2.0
--1.5
--1.0
--6
--5
--4
--3
--2
V
= --10V
DS
--1
0
--0.5
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
--4.0
Drain-to-Source Voltage, V
-- V
IT13379
Gate-to-Source Voltage, V
-- V
IT13380
DS
GS
R
(on) -- V
R
DS
(on) -- Ta
DS
GS
160
140
120
100
80
160
140
120
100
80
Ta=25°C
I = --1.5A
D
--3.0A
60
60
40
40
20
0
20
0
0
--2
--4
--6
--8
--10
--12
--14
--16
--60 --40 --20
0
20
40
60
80 100 120 140 160
Ambient Temperature, Ta -- °C
Gate-to-Source Voltage, V
-- V
IT13381
IT13382
GS
I
-- V
g
-- I
S
SD
FS
D
--10
7
10
7
V
= --10V
V
=0V
DS
GS
5
5
3
2
3
2
--1.0
7
5
1.0
7
3
2
5
--0.1
7
5
3
2
3
2
0.1
--0.01
--0.01
--0.2
3
5
7
--0.4
--0.6
--0.8
--1.0
--1.2
2
3
5
7
2
3
5
7
2
--0.1
--1.0
--10
Drain Current, I -- A
D
HD13383
Forward Diode Voltage, V -- V
SD
HD13384
Ciss, Coss, Crss -- V
SW Time -- I
DS
D
2
1000
V
V
= --15V
= --10V
GS
f=1MHz
DD
7
5
100
7
5
3
2
3
2
10
100
t (on)
d
7
5
7
5
3
2
3
2
3
5
7
2
3
5
7
0
--5
--10
--15
--20
--25
--30
IT13386
--0.1
--1.0
--10
Drain Current, I -- A
IT13385
Drain-to-Source Voltage, V
-- V
D
DS
No. A1272-3/5
MCH6341
V
-- Qg
S O A
GS
--10
--9
--8
--7
--6
--5
--4
--3
--2
5
V
= --15V
DS
3
2
I
= --20A
(PW≤10μs)
DP
I = --5A
D
--10
7
5
I = --5A
D
3
2
--1.0
7
5
3
2
Operation in this
area is limited by R (on).
DS
--0.1
7
5
Ta=25°C
Single pulse
3
2
--1
0
When mounted on ceramic substrate
(1200mm2×0.8mm)
--0.01
--0.01
0
1
2
3
4
5
6
7
8
9
10
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
--0.1
--1.0
--10
-- V HD13895
Total Gate Charge, Qg -- nC
IT13387
Drain-to-Source Voltage, V
DS
P
-- Ta
D
2.0
1.8
When mounted on ceramic substrate
(1200mm2×0.8mm)
1.6
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
HD13896
No. A1272-4/5
MCH6341
Outline Drawing
MCH6341-TL-E, MCH6341-TL-H, MCH6341-TL-W
Land Pattern Example
Mass (g) Unit
0.008
Unit: mm
mm
* For reference
0.4
0.65 0.65
Noteꢀonꢀusageꢀ:ꢀSinceꢀtheꢀ
MCH6341ꢀisꢀaꢀMOSFETꢀproduct,ꢀpleaseꢀavoidꢀusingꢀthisꢀdeviceꢀinꢀtheꢀvicinityꢀofꢀ
highly charged objects.
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PS No. A1272-5/5
相关型号：
MCH6341-TL-H
Single P-Channel Power MOSFET, -30V, -5A, 59mΩ, SC 88FL / MCPH6, 3000-REEL
ONSEMI
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