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MCH6660-TL-W [ONSEMI]

互补双路功率 MOSFET 20V;
MCH6660-TL-W
型号： MCH6660-TL-W
厂家： ONSEMI    ONSEMI
描述：

互补双路功率 MOSFET 20V

开关 光电二极管 晶体管
文件： 总8页 (文件大小：1218K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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MCH6660  
Power MOSFET  
www.onsemi.com  
–
–
Ω
Ω
20V, 136m , 2A, 20V, 266m , 1.5A Complementary Dual  
Features  
•
•
•
ON-resistance Nch : R (on)1=105m (typ.)  
1.8V Drive  
ESD Diode - Protected Gate  
Ω
DS  
Pch : R (on)1=205m (typ.)  
Ω
DS  
Pb-Free, Halogen Free and RoHS Compliance  
Ultrasmall Package MCPH6(2.0mm 2.1mm  
•
•
•
mmt)  
×
×0.85  
Nch MOSFET and Pch MOSFET are put in MCPH6 Package  
Applications  
•
General-Purpose Switching Device Applications  
Specifications  
at Ta=25°C  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Gate-to-Source Voltage  
Drain Current (DC)  
Symbol  
Conditions  
N-channel  
20  
P-channel  
Unit  
V
V
V
--20  
±10  
--1.5  
--6  
DSS  
GSS  
±10  
2
V
I
I
A
D
Drain Current (Pulse)  
Power Dissipation  
PW 10 s, duty cycle 1%  
8
A
≤
μ
≤
DP  
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit  
0.8  
W
°C  
°C  
×
D
Junction Temperature  
Storage Temperature  
Tj  
150  
Tstg  
--55 to +150  
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,  
damage may occur and reliability may be affected.  
Package Dimensions  
unit : mm (typ)  
Product & Package Information  
• Package  
: MCPH6  
7022A-006  
• JEITA, JEDEC  
: SC-88, SC-70-6, SOT-363  
• Minimum Packing Quantity : 3,000 pcs./reel  
MCH6660-TL-H  
MCH6660-TL-W  
2.0  
0.15  
Packing Type : TL  
Marking  
6
5
4
3
0 to 0.02  
XM  
1
2
TL  
0.65  
0.3  
Electrical Connection  
1 : Source1  
2 : Gate1  
6
5
4
3 : Drain2  
4 : Source2  
5 : Gate2  
1
2
3
4
6 : Drain1  
MCPH6  
6
5
1
2
3
ORDERING INFORMATION  
See detailed ordering and shipping information on page 8 of this data sheet.  
©Semiconductor Components Industries, LLC, 2014  
Publication Order Nunber:  
MCH6660/D  
1
December 2014 - Rev. 2  
MCH6660  
at Ta=25°C  
Electrical Characteristics  
Value  
typ  
Parameter  
Symbol  
Conditions  
Unit  
V
min  
max  
[N-channel]  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Gate Threshold Voltage  
V
I
I
=1mA, V =0V  
20  
(BR)DSS  
D
GS  
V
V
V
V
I
=20V, V =0V  
GS  
1
A
A
μ
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
1.3  
μ
V
g
(th)  
=10V, I =1mA  
0.4  
V
GS  
D
Forward Transconductance  
=10V, I =1A  
1.9  
S
FS  
D
R
(on)1  
DS  
(on)2  
DS  
(on)3  
DS  
=1A, V =4.5V  
GS  
105  
147  
212  
128  
28  
136  
205  
318  
m
Ω
Ω
Ω
D
Static Drain-to-Source On-State Resistance  
R
R
I
D
I
D
=0.5A, V =2.5V  
GS  
m
m
=0.3A, V =1.8V  
GS  
Input Capacitance  
Ciss  
pF  
Output Capacitance  
Coss  
Crss  
V
=10V, f=1MHz  
DS  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
Reverse Transfer Capacitance  
Turn-ON Delay Time  
21  
t (on)  
d
5.1  
Rise Time  
t
11  
r
See specified Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
14.5  
12  
t
f
Total Gate Charge  
Qg  
1.8  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Forward Diode Voltage  
[P-channel]  
Qgs  
Qgd  
V
=10V, V =4.5V, I =2A  
DS GS  
0.3  
D
0.55  
0.85  
V
I =2A, V =0V  
1.2  
SD  
S
GS  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Gate Threshold Voltage  
Forward Transconductance  
V
I
I
=-- 1mA, V =0V  
GS  
--20  
V
(BR)DSS  
D
V
V
V
V
I
=-- 20V, V =0V  
--1  
±10  
--1.4  
A
A
μ
DSS  
GSS  
DS  
GS  
I
=±8V, V =0V  
DS  
μ
GS  
DS  
DS  
V
g
(th)  
=-- 10V, I =-- 1mA  
--0.4  
V
GS  
D
=-- 10V, I =-- 750mA  
1.9  
205  
295  
430  
120  
26  
S
FS  
D
R
(on)1  
DS  
(on)2  
DS  
(on)3  
DS  
=-- 750mA, V =-- 4.5V  
GS  
266  
413  
645  
m
Ω
Ω
Ω
D
Static Drain-to-Source On-State Resistance  
R
R
I
I
=-- 300mA, V =-- 2.5V  
GS  
m
m
D
D
=-- 100mA, V =-- 1.8V  
GS  
Input Capacitance  
Ciss  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Coss  
Crss  
V
=--10V, f=1MHz  
DS  
pF  
pF  
ns  
ns  
ns  
ns  
nC  
nC  
nC  
V
20  
t (on)  
d
5.3  
t
9.7  
r
See specified Test Circuit.  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
16  
t
14  
f
Total Gate Charge  
Qg  
1.7  
Gate-to-Source Charge  
Gate-to-Drain “Miller” Charge  
Forward Diode Voltage  
Qgs  
Qgd  
V
=-- 10V, V =-- 4.5V, I =--1.5A  
DS GS  
0.28  
0.47  
--0.89  
D
V
I =--1.5A, V =0V  
GS  
--1.2  
SD  
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be  
indicated by the Electrical Characteristics if operated under different conditions.  
Thermal Resistance Ratings  
Parameter  
Symbol  
Value  
156.3  
Unit  
C/W  
Junction to Ambient  
R
°
JA  
θ
When mounted on ceramic substrate (900mm2 0.8mm) 1unit  
×
www.onsemi.com  
2
MCH6660  
Switching Time Test Circuit  
[N-channel]  
[P-channel]  
V
=10V  
V
= --10V  
DD  
V
V
IN  
DD  
IN  
4.5V  
0V  
0V  
--4.5V  
I
=1A  
I = --750mA  
D
R =13.3Ω  
L
D
V
V
IN  
IN  
R =10Ω  
L
D
V
D
V
OUT  
OUT  
PW=10μs  
D.C.≤1%  
PW=10μs  
D.C.≤1%  
G
G
MCH6660  
MCH6660  
P. G  
P. G  
50Ω  
50Ω  
S
S
[Nch]  
[Nch]  
I
-- V  
I
-- V  
D GS  
D
DS  
2.0  
1.5  
1.0  
2.5  
2.0  
1.5  
1.0  
V
=10V  
Ta=25°C  
DS  
1.5V  
0.5  
0
0.5  
0
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
Drain-to-Source Voltage, V  
-- V  
IT16372  
[Nch]  
Gate-to-Source Voltage, V  
GS  
-- V  
IT16373  
DS  
R
(on) -- V  
R
(on) -- Ta  
DS  
[Nch]  
DS  
GS  
400  
350  
300  
250  
200  
150  
100  
400  
350  
300  
250  
200  
150  
100  
Ta=25°C  
I =0.3A  
D
0.5A  
1A  
50  
0
50  
0
0
1
2
3
4
5
6
7
8
9
10  
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
IT16646  
Gate-to-Source Voltage, V  
-- V  
IT16645  
Ambient Temperature, Ta -- °C  
GS  
www.onsemi.com  
3
MCH6660  
[Nch]  
=10V  
[Nch]  
=0V  
g
-- I  
I
-- V  
SD  
FS  
D
S
10  
10  
7
V
V
GS  
DS  
5
7
3
2
5
1.0  
3
2
7
5
3
2
1.0  
0.1  
7
5
7
5
3
2
0.01  
3
2
7
5
3
2
0.1  
0.01  
0.001  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
2
3
5
7
2
3
5
7
2
3
5 7  
10  
0.1  
1.0  
Drain Current, I -- A  
SW Time -- I  
D
Forward Diode Voltage, V -- V  
SD  
IT16376  
[Nch]  
=10V  
IT16377  
D
Ciss, Coss, Crss -- V  
[Nch]  
DS  
1000  
1000  
V
V
f=1MHz  
DD  
7
5
7
=4.5V  
GS  
5
3
2
3
2
100  
7
5
100  
3
2
7
5
10  
t (on)  
d
7
5
3
2
3
2
1.0  
0.01  
10  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
2
3
5
7
2
3
5
7
2
3
5 7  
10  
0.1  
1.0  
Drain Current, I -- A  
IT16379  
[Nch]  
IT16644  
Drain-to-Source Voltage, V  
-- V  
D
DS  
V
-- Qg  
S O A  
[Nch]  
GS  
10  
4.5  
V
=10V  
=2A  
7
5
DS  
I
=8A (PW≤10μs)  
DP  
I
4.0  
3.5  
D
3
2
I =2A  
D
1.0  
7
5
3.0  
2.5  
2.0  
1.5  
1.0  
3
2
Operation in this  
area is limited by R (on).  
DS  
0.1  
7
5
3
2
Ta=25°C  
0.5  
0
Single pulse  
When mounted on ceramic substrate (900mm2×0.8mm) 1unit  
0.01  
0.1  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2
3
5
7
2
3
5
7
2
3
5 7  
100  
1.0  
10  
Total Gate Charge, Qg -- nC  
IT16380  
Drain-to-Source Voltage, V -- V  
DS  
IT16647  
I
-- V  
[Pch]  
I
-- V  
[Pch]  
D
DS  
D
GS  
--2.0  
--1.8  
--1.6  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
--2.0  
--1.8  
--1.6  
--1.4  
--1.2  
--1.0  
--0.8  
--0.6  
--0.4  
V
DS  
= --10V  
--0.2  
0
--0.2  
0
0
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0  
IT14614  
0
--0.5  
--1.0  
--1.5  
--2.0  
--2.5  
--3.0  
IT14615  
Drain-to-Source Voltage, V  
DS  
-- V  
Gate-to-Source Voltage, V -- V  
GS  
www.onsemi.com  
4
MCH6660  
R
(on) -- V  
[Pch]  
R
(on) -- Ta  
DS  
[Pch]  
DS  
GS  
700  
600  
500  
400  
300  
200  
700  
600  
500  
400  
300  
200  
Ta=25°C  
I = --0.1A  
D
--0.3A  
--0.75A  
100  
0
100  
0
--60 --40 --20  
0
20  
40  
60  
80 100 120 140 160  
0
--1  
--2  
--3  
--4  
--5  
--6  
--7  
--8  
--9  
--10  
Gate-to-Source Voltage, V  
GS  
-- V  
IT16648  
Ambient Temperature, Ta -- °C  
IT16649  
[Pch]  
I
-- V  
[Pch]  
g
-- I  
FS  
D
S
SD  
5
5
V
= --10V  
V
=0V  
DS  
GS  
3
2
3
2
--1.0  
7
5
1.0  
3
2
7
5
--0.1  
3
2
7
5
3
2
0.1  
7
--0.01  
--0.01  
2
3
5
7
2
3
5
7
--1.0  
2
3
0
--0.2  
--0.4  
--0.6  
--0.8  
--1.0  
--1.2  
--0.1  
Drain Current, I -- A  
HD14618  
Forward Diode Voltage, V -- V  
SD  
HD14619  
D
SW Time -- I  
D
Ciss, Coss, Crss -- V  
[Pch]  
[Pch]  
DS  
3
2
5
V
= --10V  
= --4.5V  
f=1MHz  
DD  
V
GS  
3
2
100  
t
7
5
f
10  
7
5
3
2
t (on)  
d
3
2
10  
7
2
3
5
7
2
3
0
--2  
--4  
--6  
--8  
--10 --12 --14 --16 --18 --20  
--0.1  
--1.0  
Drain Current, I -- A  
HD141104  
[Pch]  
Drain-to-Source Voltage, V  
-- V  
IT14621  
D
DS  
V
-- Qg  
S O A  
[Pch]  
GS  
--4.5  
--10  
7
5
I
= --6A (PW≤10μs)  
V
= --10V  
= --1.5A  
DP  
DS  
I
--4.0  
--3.5  
--3.0  
--2.5  
--2.0  
--1.5  
--1.0  
D
3
2
I
= --1.5A  
D
--1.0  
7
5
3
2
Operation in  
this area is  
limited by R (on).  
--0.1  
DS  
7
5
3
2
Ta=25°C  
--0.5  
0
Single pulse  
When mounted on ceramic substrate (900mm2×0.8mm) 1unit  
--0.01  
--0.1  
2
3
5
7
2
3
5
7
2
3
5 7  
--100  
HD16650  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
--1.0  
--10  
Total Gate Charge, Qg -- nC  
Drain-to-Source Voltage, V -- V  
DS  
IT14622  
www.onsemi.com  
5
MCH6660  
P
-- Ta  
[Nch/Pch]  
D
1.0  
0.8  
0.6  
0.4  
When mounted on ceramic substrate  
(900mm2×0.8mm) 1unit  
0.2  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
Ambient Temperature, Ta -- °C  
HD16651  
[Nch]  
R
-- Pulse Time  
θJA  
1000  
7
5
3
2
Duty Cycle=0.5  
100  
7
5
0.2  
3
2
0.1  
0.05  
10  
7
5
0.02  
0.01  
3
2
1.0  
7
5
3
2
When mounted on ceramic substrate  
(900mm2×0.8mm)1unit  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
10  
0.000001  
0.0001  
0.001  
0.01  
0.1  
1.0  
0.00001  
Pulse Time, PT -- s  
HD141121  
[Pch]  
R
-- Pulse Time  
θJA  
1000  
7
5
3
2
Duty Cycle=0.5  
100  
7
5
0.2  
3
2
0.1  
0.05  
10  
7
5
0.02  
0.01  
3
2
1.0  
7
5
3
2
When mounted on ceramic substrate  
(900mm2×0.8mm)1unit  
0.1  
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7  
10  
HD141121  
0.000001  
0.0001  
0.001  
0.01  
0.1  
1.0  
0.00001  
Pulse Time, PT -- s  
www.onsemi.com  
6
MCH6660  
Paclage Dimensions  
unit : mm  
MCH6660-TL-H, MCH6660-TL-W  
SC-88FL / MCPH6  
CASE 419AS  
ISSUE O  
Recommended Soldering  
Footprint  
0.4  
0.65 0.65  
www.onsemi.com  
7
MCH6660  
ORDERING INFORMATION  
Device  
MCH6660-TL-H  
MCH6660-TL-W  
Package  
MCPH6  
Shipping  
3,000pcs./reel  
memo  
Pb-Free and Halogen Free  
Note on usage : Since the MCH6660 is a MOSFET product, please avoid using this device in the vicinity of  
highly charged objects.  
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States  
and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of  
SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf . SCILLC reserves the right to make changes without  
further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose,  
nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without  
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do  
vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not  
designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or  
sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers,  
employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,  
directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was  
negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable  
copyright laws and is not for resale in any manner.  
www.onsemi.com  
8

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 SMBus Multi-Output Power-Supply Controller

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SI9135_11

 SMBus Multi-Output Power-Supply Controller

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VISHAY

SI9136_11

 Multi-Output Power-Supply Controller

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SI9130CG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130LG-T1-E3

 Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9130_11

 Pin-Programmable Dual Controller - Portable PCs

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VISHAY

SI9137

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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SI9137DB

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9137LG

 Multi-Output, Sequence Selectable Power-Supply Controller for Mobile Applications

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VISHAY

SI9122E

 500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification Drivers

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