MCH6662-TL-W [ONSEMI]
双 N 沟道,功率 MOSFET,20V,2A,160mΩ;型号: | MCH6662-TL-W |
厂家: | ONSEMI |
描述: | 双 N 沟道,功率 MOSFET,20V,2A,160mΩ 光电二极管 晶体管 |
文件: | 总6页 (文件大小:743K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MCH6662
Power MOSFET
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Ω
20V, 160m , 2A, Dual N-Channel
Features
•
ON-Resistance Nch : R (on)1=120m (typ)
Ω
DS
•
•
•
1.8V Drive
ESD Diode - Protected Gate
Pb-Free, Halogen Free and RoHS Compliance
Specifications
at Ta=25°C
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
Conditions
Value
Unit
V
V
V
20
DSS
GSS
±10
V
I
I
2.0
8.0
A
D
Drain Current (Pulse)
Power Dissipation
PW 10 s, duty cycle 1%
A
≤
μ
≤
DP
P
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
0.8
W
°C
°C
×
D
Junction Temperature
Storage Temperature
Tj
150
Tstg
--55 to +150
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Thermal Resistance Ratings
Parameter
Symbol
Value
156.25
Unit
C/W
Junction to Ambient
R
°
JA
θ
When mounted on ceramic substrate (900mm2 0.8mm) 1unit
×
Product & Package Information
• Package
: MCPH6
• JEITA, JEDEC
: SC-88, SC-70-6, SOT-363
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
XP
TL
Electrical Connection
6
5
4
1
2
3
ORDERING INFORMATION
See detailed ordering and shipping information on page 6 of this data sheet.
©Semiconductor Components Industries, LLC, 2015
Publication Order Number:
1
January 2015 - Rev. 1
MCH6662/D
MCH6662
at Ta=25°C
Electrical Characteristics
Value
typ
Parameter
Symbol
Conditions
Unit
V
min
max
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Gate Threshold Voltage
V
I
I
=1mA, V =0V
20
(BR)DSS
D
GS
V
V
V
V
I
=20V, V =0V
GS
1
A
A
μ
DSS
GSS
DS
GS
DS
DS
I
=±8V, V =0V
DS
±10
1.3
μ
V
g
(th)
=10V, I =1mA
0.4
V
GS
D
Forward Transconductance
=10V, I =1A
1.9
S
FS
D
R
(on)1
DS
(on)2
DS
(on)3
DS
=1.0A, V =4.5V
GS
120
170
255
128
28
160
240
380
m
Ω
Ω
Ω
D
Static Drain-to-Source On-State Resistance
R
R
I
D
I
D
=0.5A, V =2.5V
GS
m
m
=0.1A, V =1.8V
GS
Input Capacitance
Ciss
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Coss
Crss
V
=10V, f=1MHz
DS
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
21
t (on)
d
5.1
t
11
r
See specified Test Circuit.
Turn-OFF Delay Time
Fall Time
t (off)
d
14.5
12
t
f
Total Gate Charge
Qg
1.8
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Forward Diode Voltage
Qgs
Qgd
V
=10V, V =4.5V, I =2A
DS GS
0.3
D
0.55
0.85
V
I =2A, V =0V
GS
1.2
SD
S
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
V
=10V
V
DD
IN
4.5V
0V
I
=1.0A
D
V
IN
R =10Ω
L
D
V
OUT
PW=10μs
D.C.≤1%
G
MCH6662
P. G
50Ω
S
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2
MCH6662
I
-- V
I
-- V
D
DS
D
GS
2.0
1.5
1.0
2.5
2.0
1.5
1.0
V
=10V
Ta=25°C
DS
1.5V
0.5
0
0.5
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Drain-to-Source Voltage, V
-- V
IT16372
Gate-to-Source Voltage, V -- V
GS
IT16373
DS
R
(on) -- V
R
(on) -- Ta
DS
DS
GS
600
500
400
300
200
600
500
400
300
200
Ta=25°C
I =0.1A
D
0.5A
1A
100
0
100
0
0
1
2
3
4
5
6
7
8
9
10
--60 --40 --20
0
20
40
60
80 100 120 140 160
IT16712
IT16713
Gate-to-Source Voltage, V
-- V
Ambient Temperature, Ta -- °C
GS
g
-- I
I
-- V
FS
D
S
SD
10
7
5
10
7
V
=0V
V
=10V
GS
DS
3
2
5
1.0
3
2
7
5
3
2
1.0
7
0.1
7
5
3
2
5
0.01
3
2
7
5
3
2
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
HD16377
2
3
5
7
2
3
5
7
2
3
5 7
10
0.1
1.0
Drain Current, I -- A
Forward Diode Voltage, V -- V
SD
HD16643
D
SW Time -- I
D
Ciss, Coss, Crss -- V
DS
1000
1000
V
V
=10V
=4.5V
GS
f=1MHz
DD
7
5
7
5
3
2
3
2
100
7
5
100
3
2
7
5
10
t (on)
d
7
5
3
2
3
2
1.0
0.01
10
0
2
4
6
8
10
12
14
16
18
20
2
3
5
7
2
3
5
7
2
3
5 7
10
0.1
1.0
Drain Current, I -- A
IT16379
IT16644
Drain-to-Source Voltage, V
-- V
D
DS
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3
MCH6662
V
-- Qg
S O A
GS
10
7
5
4.5
4.0
3.5
V
=10V
DS
I
=8A (PW≤10μs)
DP
I =2A
D
3
2
I =2A
D
1.0
7
5
3.0
2.5
2.0
1.5
1.0
3
2
Operation in this
area is limited by R (on).
DS
0.1
7
5
3
2
Ta=25°C
0.5
0
Single pulse
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
0.01
0.1
2
3
5
7
2
3
5
7
2
3
5 7
100
HD16714
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
1.0
10
Total Gate Charge, Qg -- nC
IT16380
Drain-to-Source Voltage, V -- V
DS
P
-- Ta
D
1.0
0.8
0.6
0.4
When mounted on ceramic substrate
(900mm2×0.8mm) 1unit
0.2
0
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta -- °C
HD16715
R
-- Pulse Time
θJA
1000
7
5
3
2
Duty Cycle=0.5
100
7
5
0.2
3
2
0.1
0.05
10
7
5
0.02
0.01
3
2
1.0
7
5
3
2
When mounted on ceramic substrate
(900mm2×0.8mm)1unit
0.1
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5
7
2
3
5 7
10
HD150106
0.000001
0.0001
0.001
0.01
0.1
1.0
0.00001
Pulse Time, PT -- s
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4
MCH6662
Package Dimensions
unit : mm
MCH6662-TL-H, MCH6662-TL-W
SC-88FL / MCPH6
CASE 419AS
ISSUE O
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Recommended Soldering
Footprint
0.4
0.65 0.65
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5
MCH6662
ORDERING INFORMATION
Device
MCH6662-TL-H
MCH6662-TL-W
Package
MCPH6
Shipping
3,000pcs./reel
memo
Pb-Free and Halogen Free
Note on usage : Since the MCH6662 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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