MCR100-6ZL1G [ONSEMI]

Sensitive Gate Silicon Controlled Rectifiers; 敏感栅硅控整流器


型号：	MCR100-6ZL1G
厂家：	ONSEMI
描述：	Sensitive Gate Silicon Controlled Rectifiers 敏感栅硅控整流器栅极触发装置可控硅整流器
文件：	总6页 (文件大小：69K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MCR100 Series

Preferred Device

Sensitive Gate

Silicon Controlled Rectifiers

Reverse Blocking Thyristors

PNPN devices designed for high volume, line-powered consumer

applications such as relay and lamp drivers, small motor controls, gate

drivers for larger thyristors, and sensing and detection circuits.

Supplied in an inexpensive plastic TO-226AA package which is

readily adaptable for use in automatic insertion equipment.

http://onsemi.com

SCRs

0.8 A RMS

100 thru 600 V

Features

• Sensitive Gate Allows Triggering by Microcontrollers and Other

Logic Circuits

• Blocking Voltage to 600 V

• On−State Current Rating of 0.8 Amperes RMS at 80°C

• High Surge Current Capability − 10 A

• Minimum and Maximum Values of IGT, VGT and IH Specified

for Ease of Design

• Immunity to dV/dt − 20 V/msec Minimum at 110°C

• Glass-Passivated Surface for Reliability and Uniformity

• Pb−Free Packages are Available*

MARKING

DIAGRAM

MCR

100−x

AYWW

TO−92 (TO−226)

CASE 029

STYLE 10

= Specific Device Code

= Assembly Location

= Year

= Work Week

PIN ASSIGNMENT

Cathode

Gate

Anode

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

January, 2005 − Rev. 6

MCR100/D

MCR100 Series

ORDERING INFORMATION

Device

†

Package Code

Shipping

MCR100−003

MCR100−004

5000 Units / Bulk

MCR100−006

MCR100−008

MCR100−3RL

TO−92 (TO−226)

MCR100−6RL

2000 Units / Tape & Reel

MCR100−6RLRA

MCR100−6RLRM

MCR100−6ZL1

MCR100−8RL

2000 Units / Tape & Ammunition Box

2000 Units / Tape & Reel

MCR100−003G

MCR100−006G

MCR100−008G

MCR100−3RLG

MCR100−6RLG

MCR100−6RLRAG

MCR100−6RLRMG

MCR100−6ZL1G

MCR100−8RLG

5000 Units / Bulk

2000 Units / Tubes

TO−92 (TO−226)

(Pb−Free)

2000 Units / Tape & Reel

2000 Units / Tape & Ammunition Box

2000 Units / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Peak Repetitive Off−State Voltage (Note 1)

DRM,

(T = *40 to 110°C, Sine Wave, 50 to 60 Hz; Gate Open)

RRM

MCR100−3

MCR100−4

MCR100−6

MCR100−8

100

200

400

600

On-State RMS Current, (T = 80°C) 180° Conduction Angles

0.8

T(RMS)

Peak Non-Repetitive Surge Current, (1/2 Cycle, Sine Wave, 60 Hz, T = 25°C)

TSM

Circuit Fusing Consideration, (t = 8.3 ms)

I t

0.415

0.1

A s

Forward Peak Gate Power, (T = 25°C, Pulse Width v 1.0 ms)

Forward Average Gate Power, (T = 25°C, t = 8.3 ms)

0.10

G(AV)

1.0

Forward Peak Gate Current, (T = 25°C, Pulse Width v 1.0 ms)

5.0

Reverse Peak Gate Voltage, (T = 25°C, Pulse Width v 1.0 ms)

GRM

Operating Junction Temperature Range @ Rate V

and V

−40 to 110

−40 to 150

°C

RRM

DRM

Storage Temperature Range

stg

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit

values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,

damage may occur and reliability may be affected.

1. V

and V

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate

DRM

RRM

voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current

source such that the voltage ratings of the devices are exceeded.

http://onsemi.com

MCR100 Series

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,Junction−to−Case

Junction−to−Ambient

200

°C/W

Lead Solder Temperature

260

°C

(t1/16″ from case, 10 secs max)

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Symbol

Min

Typ

Max

Unit

Peak Repetitive Forward or Reverse Blocking Current (Note 2)

, I

DRM RRM

= 25°C

= 110°C

−

100

(V = Rated V

and V

; R = 1 kW)

DRM

RRM

ON CHARACTERISTICS

Peak Forward On−State Voltage

−

1.7

(I = 1.0 A Peak @ T = 25°C)

Gate Trigger Current (Continuous dc) (Note 3)

= 25°C

200

(V = 7.0 Vdc, R = 100 W)

(2)

Holding Current

= 25°C

= −40°C

−

0.5

−

5.0

(V = 7.0 Vdc, Initiating Current = 20 mA)

Latch Current

(V = 7.0 V, Ig = 200 mA)

= 25°C

= −40°C

−

0.6

−

Gate Trigger Voltage (Continuous dc) (Note 3)

= 25°C

−

0.62

−

0.8

1.2

(V = 7.0 Vdc, R = 100 W)

T = −40°C

DYNAMIC CHARACTERISTICS

Critical Rate of Rise of Off−State Voltage

(V = Rated V , Exponential Waveform, R = 1000 W,T = 110°C)

dV/dt

di/dt

−

V/ms

A/ms

DRM

Critical Rate of Rise of On−State Current

(I = 20 A; Pw = 10 msec; diG/dt = 1 A/msec, Igt = 20 mA)

*Indicates Pulse Test: Pulse Width ≤ 1.0 ms, Duty Cycle ≤ 1%.

2. R = 1000 W included in measurement.

3. Does not include R in measurement.

Voltage Current Characteristic of SCR

+ Current

Anode +

Symbol

Parameter

Peak Repetitive Off State Forward Voltage

Peak Forward Blocking Current

Peak Repetitive Off State Reverse Voltage

Peak Reverse Blocking Current

Peak on State Voltage

DRM

on state

at V

RRM

+ Voltage

Holding Current

at V

DRM

Reverse Blocking Region

(off state)

DRM

Forward Blocking Region

(off state)

Reverse Avalanche Region

Anode −

http://onsemi.com

MCR100 Series

100

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

−40 −25 −10

20 35 50 65 80 95 110

−40 −25 −10

20 35 50

65 80 95 110

T , JUNCTION TEMPERATURE (°C)

Figure 1. Typical Gate Trigger Current versus

Junction Temperature

Figure 2. Typical Gate Trigger Voltage versus

Junction Temperature

1000

100

1000

100

−40 −25 −10

20 35 50 65 80 95 110

−40 −25 −10

20 35 50 65 80 95 110

T , JUNCTION TEMPERATURE (°C)

Figure 3. Typical Holding Current versus

Junction Temperature

Figure 4. Typical Latching Current versus

Junction Temperature

120

110

MAXIMUM @ T = 25°C

MAXIMUM @ T = 110°C

100

180°

30°

0.2

60°

90°

120°

0.1

0.3

0.4

0.5

0.5 0.8 1.1 1.4 1.7 2.0 2.3 2.6 2.9 3.2 3.5

I , RMS ON-STATE CURRENT (AMPS)

T(RMS)

V , INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)

Figure 5. Typical RMS Current Derating

Figure 6. Typical On−State Characteristics

http://onsemi.com

MCR100 Series

TO−92 EIA RADIAL TAPE IN FAN FOLD BOX OR ON REEL

H2A

H2B

Figure 7. Device Positioning on Tape

Specification

Millimeter

Inches

Min

Max

Min

Max

Symbol

Item

0.1496

0.015

0.0945

.059

0.1653

3.8

4.2

Tape Feedhole Diameter

F1, F2

0.020

0.110

.156

0.38

2.4

1.5

8.5

0.51

2.8

Component Lead Thickness Dimension

Component Lead Pitch

4.0

Bottom of Component to Seating Plane

Feedhole Location

H2A

H2B

0.3346

0.3741

0.039

0.051

0.768

0.649

0.433

—

9.5

1.0

Deflection Left or Right

1.0

Deflection Front or Rear

0.7086

0.610

0.3346

0.09842

0.4921

0.2342

0.1397

0.06

19.5

16.5

Feedhole to Bottom of Component

Feedhole to Seating Plane

Defective Unit Clipped Dimension

Lead Wire Enclosure

15.5

8.5

2.5

12.5

5.95

3.55

0.15

—

0.5079

0.2658

0.1556

0.08

12.9

6.75

3.95

0.20

1.44

0.65

Feedhole Pitch

Feedhole Center to Center Lead

First Lead Spacing Dimension

Adhesive Tape Thickness

Overall Taped Package Thickness

Carrier Strip Thickness

—

0.0567

0.027

0.7481

0.2841

0.01968

0.014

0.6889

0.2165

.0059

0.35

17.5

5.5

.15

Carrier Strip Width

6.3

Adhesive Tape Width

0.5

Adhesive Tape Position

NOTES:

1. Maximum alignment deviation between leads not to be greater than 0.2 mm.

2. Defective components shall be clipped from the carrier tape such that the remaining protrusion (L) does not exceed a maximum of 11 mm.

3. Component lead to tape adhesion must meet the pull test requirements.

4. Maximum non−cumulative variation between tape feed holes shall not exceed 1 mm in 20 pitches.

5. Holddown tape not to extend beyond the edge(s) of carrier tape and there shall be no exposure of adhesive.

6. No more than 1 consecutive missing component is permitted.

7. A tape trailer and leader, having at least three feed holes is required before the first and after the last component.

8. Splices will not interfere with the sprocket feed holes.

http://onsemi.com

MCR100 Series

PACKAGE DIMENSIONS

TO−92 (TO−226)

CASE 029−11

ISSUE AL

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. LEAD DIMENSION IS UNCONTROLLED IN P AND

BEYOND DIMENSION K MINIMUM.

INCHES

DIM MIN MAX

MILLIMETERS

MIN

4.45

4.32

3.18

0.407

1.15

2.42

0.39

12.70

6.35

2.04

−−−

MAX

5.20

5.33

4.19

0.533

1.39

2.66

0.50

−−−

SEATING

PLANE

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

−−−

0.205

0.210

0.165

0.021

0.055

0.105

0.020

−−−

X X

−−−

0.105

0.100

−−−

2.66

2.54

−−−

0.115

0.135

2.93

3.43

SECTION X−X

−−−

STYLE 10:

PIN 1. CATHODE

2. GATE

3. ANODE

ON Semiconductor and

are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

ON Semiconductor Website: http://onsemi.com

Order Literature: http://www.onsemi.com/litorder

Literature Distribution Center for ON Semiconductor

P.O. Box 61312, Phoenix, Arizona 85082−1312 USA

Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada

Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

Japan: ON Semiconductor, Japan Customer Focus Center

2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051

Phone: 81−3−5773−3850

For additional information, please contact your

local Sales Representative.

MCR100/D

http://onsemi.com

MCR100-6ZL1G [ONSEMI]

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