MCR25D [ONSEMI]
SILICON CONTROLLED RECTIFIERS; 可控硅整流器器
| 型号： | MCR25D |
| 厂家： | 
ONSEMI |
| 描述： | SILICON CONTROLLED RECTIFIERS |
| 文件： | 总8页 (文件大小：197K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Preferred Device
Reverse Blocking Thyristors
Designed primarily for half–wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half–wave, silicon gate–controlled devices are needed.
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• Blocking Voltage to 800 Volts
• On-State Current Rating of 25 Amperes RMS
• High Surge Current Capability — 300 Amperes
• Rugged, Economical TO–220AB Package
• Glass Passivated Junctions for Reliability and Uniformity
SCRs
25 AMPERES RMS
400 thru 800 VOLTS
• Minimum and Maximum Values of I , V , and I Specified for
GT GT
H
Ease of Design
G
• High Immunity to dv/dt — 100 V/µsec Minimum @ 125°C
• Device Marking: Logo, Device Type, e.g., MCR25D, Date Code
A
K
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
J
Rating
Symbol
Value
Unit
4
(1)
Peak Repetitive Off–State Voltage
V
Volts
DRM,
(T = –40 to 125°C, Sine Wave, 50 to
V
RRM
J
60 Hz, Gate Open)
MCR25D
MCR25M
MCR25N
400
600
800
On-State RMS Current
(180° Conduction Angles; T = 80°C)
I
25
A
A
T(RMS)
1
2
C
3
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz,
I
300
TSM
TO–220AB
CASE 221A
STYLE 3
T
= 125°C)
J
2
2
Circuit Fusing Consideration
(t = 8.3 ms)
I t
373
20.0
0.5
A sec
PIN ASSIGNMENT
Cathode
Forward Peak Gate Power
(Pulse Width ≤ 1.0 µs, T = 80°C)
P
Watts
Watt
A
GM
1
2
3
4
C
Anode
Forward Average Gate Power
(t = 8.3 ms, T = 80°C)
P
G(AV)
Gate
C
Anode
Forward Peak Gate Current
(Pulse Width ≤ 1.0 µs, T = 80°C)
I
2.0
GM
C
Operating Junction Temperature Range
Storage Temperature Range
T
–40 to
+125
°C
J
ORDERING INFORMATION
T
stg
–40 to
+150
°C
Device
MCR25D
MCR25M
MCR25N
Package
TO220AB
TO220AB
TO220AB
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
(1) V
DRM
and V for all types can be applied on a continuous basis. Ratings
RRM
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage
ratings of the devices are exceeded.
Preferred devices are recommended choices for future use
and best overall value.
Semiconductor Components Industries, LLC, 1999
1
Publication Order Number:
February, 2000 – Rev. 3
MCR25/D
MCR25D, MCR25M, MCR25N
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance — Junction to Case
— Junction to Ambient
R
θJC
R
θJA
1.5
62.5
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
T
L
260
°C
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
J
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Peak Repetitive Forward or Reverse Blocking Current
I
I
mA
DRM
RRM
(V
AK
= Rated V
DRM
or V
, Gate Open)
RRM
T
J
T
J
= 25°C
= 125°C
—
—
—
—
0.01
2.0
ON CHARACTERISTICS
Peak Forward On-State Voltage* (I
= 50 A)
Gate Trigger Current (Continuous dc) (V = 12 V, R = 100 Ω)
V
—
4.0
0.5
5.0
—
—
12
1.8
30
1.0
40
80
Volts
mA
TM
TM
I
D
L
GT
Gate Trigger Voltage (Continuous dc) (V = 12 V, R = 100 Ω)
V
GT
0.67
13
Volts
mA
D
L
Holding Current (V =12 Vdc, Initiating Current = 200 mA, Gate Open)
I
H
D
Latching Current (V = 12 V, I = 30 mA)
I
L
35
mA
D
G
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off–State Voltage
dv/dt
di/dt
100
—
250
—
—
V/µs
A/µs
(V = 67% of Rated V
, Exponential Waveform, Gate Open,
DRM
D
T
J
= 125°C)
Critical Rate of Rise of On–State Current
(I = 50 A, Pw = 30 µsec, diG/dt = 1 A/µsec, Igt = 50 mA)
50
PK
*Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
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2
MCR25D, MCR25M, MCR25N
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
Parameter
V
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
DRM
DRM
on state
I
I
H
I
at V
RRM
RRM
V
RRM
I
RRM
V
TM
+ Voltage
at V
DRM DRM
I
H
Holding Current
I
Reverse Blocking Region
(off state)
Forward Blocking Region
(off state)
Reverse Avalanche Region
Anode –
40
35
30
25
20
15
10
1.0
0.9
0.8
0.7
0.6
0.5
0.4
5
0
0.3
0.2
–40 –25 –10
5
20 35 50 65 80 95 110 125
–40 –25 –10
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
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3
MCR25D, MCR25M, MCR25N
1
100
10
Typical @ 25°C
Maximum @ 125°C
Z
R
R(t)
JC(t)
JC
Maximum @ 25°C
0.1
1
0.1
0.01
4
0.5
0.9
1.3
1.7
2.1
2.5
2.9
0.1
1
10
100
1000 1 10
V , INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
T
t, TIME (ms)
Figure 3. Typical On–State Characteristics
Figure 4. Transient Thermal Response
100
10
1
100
10
1
–40 –25 –10
–40 –25 –10
5
20 35 50 65 80 95 110 125
5
20 35 50 65 80 95 110 125
T , JUNCTION TEMPERATURE (°C)
J
T , JUNCTION TEMPERATURE (°C)
J
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
32
28
24
20
16
12
8
130
120
110
100
180°
dc
90°
60°
= Conduction
Angle
= Conduction
Angle
= 30°
dc
90
80
4
0
180°
= 30°
60°
90°
0
2
4
6
8
10 12 14 16
18 20
0
2
4
6
8
10 12 14 16 18 20
I , RMS ON–STATE CURRENT (AMPS)
T(RMS)
I
T(AV)
, AVERAGE ON–STATE CURRENT (AMPS)
Figure 8. On State Power Dissipation
Figure 7. Typical RMS Current Derating
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4
MCR25D, MCR25M, MCR25N
2500
1200
1000
800
600
400
200
0
Gate Cathode Open,
(dv/dt does not depend on RGK )
Gate–Cathode Open,
(dv/dt does not depend on RGK)
2000
1500
1000
500
0
V
PK
= 275
85°C
100°C
110°C
V
PK
= 400
V
PK
= 600
T = 125°C
J
V
PK
= 800
200
300
400
500
600
700
800
80
85
90
95
100
105
110
115
120 125
T , Junction Temperature (°C )
J
V
PK
, Peak Voltage (Volts)
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage.
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature.
300
280
260
240
220
200
1 CYCLE
TJ=125° C f=60 Hz
180
160
1
2
3
4
5
6
7
8
9
10
NUMBER OF CYCLES
Figure 11. Maximum Non–Repetitive
Surge Current
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5
MCR25D, MCR25M, MCR25N
PACKAGE DIMENSIONS
TO–220AB
CASE 221A–09
ISSUE Z
NOTES:
SEATING
PLANE
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
–T–
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
C
T
S
4
1
INCHES
DIM MIN MAX
0.620 14.48
MILLIMETERS
MIN
MAX
15.75
10.28
4.82
0.88
3.73
2.66
3.93
0.64
14.27
1.52
5.33
3.04
2.79
1.39
6.47
1.27
–––
A
K
Q
Z
A
B
C
D
F
0.570
0.380
0.160
0.025
0.142
0.095
0.110
0.018
0.500
0.045
0.190
0.100
0.080
0.045
0.235
0.000
0.045
–––
0.405
0.190
0.035
0.147
0.105
0.155
0.025
9.66
4.07
0.64
3.61
2.42
2.80
0.46
2
3
U
H
G
H
J
K
L
N
Q
R
S
T
U
V
Z
0.562 12.70
0.060
0.210
0.120
0.110
0.055
0.255
0.050
–––
1.15
4.83
2.54
2.04
1.15
5.97
0.00
1.15
–––
L
R
V
J
G
D
N
0.080
2.04
STYLE 3:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
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6
MCR25D, MCR25M, MCR25N
Notes
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7
MCR25D, MCR25M, MCR25N
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MCR25/D
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